公开(公告)号：US20240257849A1

公开(公告)日：2024-08-01

申请号：US18630352

申请日：2024-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soong-Man SHIN ,  Hyungjin KIM ,  YoungWook KIM

IPC: G11C7/22 ,  G06F13/16 ,  G11C7/10 ,  G11C8/18

CPC classification number: G11C7/222 ,  G06F13/1689 ,  G11C7/1066 ,  G11C7/1093 ,  G11C8/18

Abstract: A storage device including a nonvolatile memory device including memory blocks and a controller connected with the nonvolatile memory device through data input and output lines and a data strobe line may be provided. The nonvolatile memory device and the controller may be configured to perform training on the data input and output lines by adjusting a delay of a data strobe signal sent through the data strobe line and adjust delays of the data input and output lines based on the training result.

公开(公告)号：US20160034189A1

公开(公告)日：2016-02-04

申请号：US14662736

申请日：2015-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： YoungWook KIM ,  Kui-Yon MUN ,  Soong-Mann SHIN ,  Jae-Sung YU

IPC: G06F3/06 ,  G11C16/04

CPC classification number: G06F3/061 ,  G06F3/0659 ,  G06F3/0679 ,  G06F3/0688 ,  G11C7/04 ,  G11C16/0466

Abstract: A storage device includes a nonvolatile memory and a memory controller. The nonvolatile memory performs read, write, and erase operations. The memory controller operates in an operating mode where the memory controller exchanges a voltage signal, set to a reference voltage level within an allowable range, with the nonvolatile memory or receives the voltage signal from an external device. When operating in the operating mode, the memory controller optimizes an operating frequency of the nonvolatile memory depending on a voltage level of the voltage signal and a temperature.

Abstract translation: 存储装置包括非易失性存储器和存储器控制器。 非易失性存储器执行读，写和擦除操作。 存储器控制器在操作模式下操作，其中存储器控制器与非易失性存储器交换设置到允许范围内的参考电压电平的电压信号或从外部设备接收电压信号。 当在操作模式下操作时，存储器控制器根据电压信号的电压电平和温度优化非易失性存储器的工作频率。

公开(公告)号：US20210319818A1

公开(公告)日：2021-10-14

申请号：US17355746

申请日：2021-06-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soong-Man SHIN ,  Hyungjin KIM ,  YoungWook KIM

IPC: G11C7/22 ,  G06F13/16 ,  G11C8/18 ,  G11C7/10

Abstract: A storage device including a nonvolatile memory device including memory blocks and a controller connected with the nonvolatile memory device through data input and output lines and a data strobe line may be provided. The nonvolatile memory device and the controller may be configured to perform training on the data input and output lines by adjusting a delay of a data strobe signal sent through the data strobe line and adjust delays of the data input and output lines based on the training result.

公开(公告)号：US20200227100A1

公开(公告)日：2020-07-16

申请号：US16834595

申请日：2020-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soong-Man SHIN ,  Hyungjin KIM ,  YoungWook KIM

IPC: G11C7/22 ,  G06F13/16 ,  G11C8/18 ,  G11C7/10

Abstract: A storage device including a nonvolatile memory device including memory blocks and a controller connected with the nonvolatile memory device through data input and output lines and a data strobe line may be provided. The nonvolatile memory device and the controller may be configured to perform training on the data input and output lines by adjusting a delay of a data strobe signal sent through the data strobe line and adjust delays of the data input and output lines based on the training result.

公开(公告)号：US20190079882A1

公开(公告)日：2019-03-14

申请号：US15964993

申请日：2018-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： YoungWook KIM ,  Hyung-jin Kim ,  Soong-Man Shin ,  Keun-Hwan Lee

IPC: G06F13/16 ,  G11C7/10 ,  G11C7/22 ,  G06F3/06

CPC classification number: G06F13/1689 ,  G06F3/0614 ,  G06F3/0658 ,  G06F3/0673 ,  G11C7/1009 ,  G11C7/1093 ,  G11C7/22 ,  G11C16/06 ,  G11C16/32 ,  G11C29/52 ,  G11C2207/2254

Abstract: An operation method performed at a nonvolatile memory device may include receiving a program command and an address from an external device through a data signal (DQ), receiving a specific pattern from the external device through the data signal and a data strobe signal (DQS) synchronized with the data signal in a pattern period, receiving user data from the external device through the data signal and the data strobe signal in a data period, and selectively performing a program operation on the user data or a recovery operation based on a determination of whether the specific pattern matches with a particular pattern. A rising edge or a falling edge of the data strobe signal may be aligned with a left edge or a right edge of a window of the data signal in the pattern period.