公开(公告)号：US11990189B2

公开(公告)日：2024-05-21

申请号：US17839253

申请日：2022-06-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younghwi Yang ,  Joonsuc Jang

IPC: G11C16/34 ,  G11C16/04 ,  G11C16/08 ,  G11C16/10 ,  H01L23/00 ,  H01L25/065 ,  H01L25/18

CPC classification number: G11C16/3427 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  H01L24/08 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/08145 ,  H01L2924/1431 ,  H01L2924/14511

Abstract: A nonvolatile memory device includes at least one memory block and a control circuit. The at least one memory block includes a plurality of cell strings that are divided into a plurality of stacks disposed in the vertical direction, and each of the plurality of stacks includes at least one dummy word-line. The control circuit controls a program operation by applying a program voltage to a selected word-line of the plurality of cell strings during a program execution period and by reducing a voltage level of a dummy voltage applied to the at least one dummy word-line of at least one upper stack from among the plurality of stacks during the program execution period. The at least one upper stack is disposed at a higher position than a selected stack in the vertical direction and the selected stack from among the plurality of stacks includes the selected word-line.

公开(公告)号：US11475972B2

公开(公告)日：2022-10-18

申请号：US17368460

申请日：2021-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younghwi Yang ,  Ilhan Park ,  Jinyoung Kim ,  Sehwan Park ,  Dongmin Shin

IPC: G11C29/42 ,  G11C29/44 ,  G11C29/12 ,  G11C7/10 ,  H03K19/21

Abstract: A controller includes control pins, a buffer memory, an error correction circuit, and a processor driving a read level search unit for a read operation of at least one non-volatile memory device, in which the read level search unit receives fail bit information of a sector error-corrected in the first page from the at least one non-volatile memory device when the error correction of the first read data is not possible, and searches for an optimal read level or set a soft decision offset using the fail bit information.

公开(公告)号：US20220180957A1

公开(公告)日：2022-06-09

申请号：US17368460

申请日：2021-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younghwi Yang ,  Ilhan Park ,  Jinyoung Kim ,  Sehwan Park ,  Dongmin Shin

IPC: G11C29/42 ,  G11C29/44 ,  G11C29/12 ,  G11C7/10 ,  H03K19/21

Abstract: A controller includes control pins, a buffer memory, an error correction circuit, and a processor driving a read level search unit for a read operation of at least one non-volatile memory device, in which the read level search unit receives fail bit information of a sector error-corrected in the first page from the at least one non-volatile memory device when the error correction of the first read data is not possible, and searches for an optimal read level or set a soft decision offset using the fail bit information.