-
公开(公告)号：US20250053312A1
公开(公告)日：2025-02-13
申请号：US18587279
申请日：2024-02-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sangsoo Park , Jinyoung Kim , Sehwan Park , Jisang Lee
Abstract: A nonvolatile memory device includes a memory block, a page buffer circuit and a control circuit. The page buffer circuit is connected to the cell strings through bit-lines. The control circuit controls a read operation by: latching a first sensing data and a second sensing data in the page buffer circuit by performing a first read operation on a selected word-line designated by an access address based on a read voltage set; latching a third sensing data in the page buffer circuit by performing a second read operation on an aggressor word-line adjacent to the selected word-line, based on at least one adjacent read voltage; selecting one of the first sensing data and the second sensing data as a hard decision data based on a program state of the third sensing data; and generating a soft decision data by using the first sensing data and the second sensing data.
-
公开(公告)号：US12207463B2
公开(公告)日：2025-01-21
申请号：US17487317
申请日：2021-09-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaebeom Byun , Jongsam Kim , Sehwan Park
Abstract: A vertical non-volatile memory device capable of stably maintaining an operating temperature in a chip level, a semiconductor package including the memory device, and a heat dissipation method of the memory device. The vertical non-volatile memory device includes a substrate on which a cell array area and an extension area are defined, a vertical channel structure formed on the substrate, a thermoelectric device including at least two semiconductor pillars formed on the substrate, and a stacked structure on the substrate. The stacked structure includes a gate electrode layer and an interlayer insulation layer which are stacked alternately along sidewalls of the vertical channel structure and the at least two semiconductor pillars. The at least two semiconductor pillars include an n-type semiconductor pillar and a p-type semiconductor pillar which are electrically connected to each other through a conductive layer on the substrate.
-
公开(公告)号：US12181953B2
公开(公告)日：2024-12-31
申请号：US18374717
申请日：2023-09-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Wandong Kim , Jinyoung Kim , Sehwan Park , Hyun Seo , Sangwan Nam
Abstract: An operating method of a nonvolatile memory device for programming multi-page data, the operating method including: receiving the multi-page data from a memory controller; programming first page data among the multi-page data to first memory cells connected to a word line adjacent to a selected word line; reading previous page data previously stored in second memory cells connected to the selected word line based on a first sensing value and a second sensing value after programming the first page data; calculating a first fail bit number by comparing first bits of the previous page data read based on the first sensing value to second bits of the previous page data read based on the second sensing value; and programming the previous page data read from the second memory cells and second page data among the multi-page data to the second memory cells based on the first fail bit number.
-
公开(公告)号：US12131789B2
公开(公告)日：2024-10-29
申请号：US17847545
申请日：2022-06-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Junho Kim , Jinyoung Kim , Sehwan Park , Seoyoung Lee , Jisang Lee , Joonsuc Jang
CPC classification number: G11C16/3459 , G11C16/08 , G11C16/102 , G11C16/26 , G11C16/3404
Abstract: Aggressor memory cells connected to one or more aggressor wordlines are grouped into aggressor cell groups by performing a read operation with respect to the aggressor wordlines based on one or more grouping read voltages, where the aggressor wordlines are adjacent to a selected wordline corresponding to a read address among wordlines of a memory block. Selected memory cells connected to the selected wordline are grouped into a selected cell groups respectively corresponding to the aggressor cell groups. Group read conditions respectively corresponding to the selected cell groups are determined and group read operations are performed with respect to the plurality of selected cell groups based on the group read conditions. The read errors are reduced by grouping the selected memory cells into the selected cell groups according to the change of operation environments.
-
公开(公告)号：US12079165B2
公开(公告)日：2024-09-03
申请号：US17955992
申请日：2022-09-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sehwan Park
IPC: G06F3/04817 , G06F3/023 , G06F3/04886 , G06F16/14 , G06F16/242
CPC classification number: G06F16/14 , G06F3/0237 , G06F3/0238 , G06F3/04817 , G06F3/04886 , G06F16/2428
Abstract: A method and an apparatus are provided for executing applications. Based on a first user input, a first window including number keys is displayed. Based on a second user input selecting a key, a second window is displayed including a list of applications. Based on an application being selected, the selected application is mapped to the selected key and an icon image corresponding to the selected application is displayed in the selected key. After the selected application is mapped, a third user input is received corresponding to the selected key. In response to the third user input, a function is performed associated with the selected application in case that a duration of the third user input is longer than or equal to a threshold duration, and an operation different from the function is performed in case that the duration is shorter than the threshold duration.
-
Patent Agency Ranking
公开(公告)号：US11868647B2
公开(公告)日：2024-01-09
申请号：US17522578
申请日：2021-11-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Youngdeok Seo , Jinyoung Kim , Sehwan Park , Ilhan Park
IPC: G06F3/06
CPC classification number: G06F3/0655 , G06F3/0604 , G06F3/0679
Abstract: A nonvolatile memory device includes a memory block including a memory area, an on-chip valley search (OVS) circuit performing an OVS sensing operation on the memory block, and a buffer memory storing at least one variation table including variation information of a threshold voltage of memory cells, obtained from the OVS sensing operation. A reading operation including an OVS sensing operation and a main sensing operation on the memory area is performed in response to a read command applied by a memory controller, the OVS sensing operation is performed at an OVS sensing level, and the main sensing operation is performed at a main sensing level reflecting the variation information. In the nonvolatile memory device, correction accuracy for deterioration of a word line threshold voltage may be improved, and a burden on a memory controller may be reduced.
-
公开(公告)号：US11763903B2
公开(公告)日：2023-09-19
申请号：US17498832
申请日：2021-10-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sehwan Park , Jinyoung Kim , Youngdeok Seo , Dongmin Shin
CPC classification number: G11C16/3459 , G11C7/1057 , G11C7/1084 , G11C11/54 , G11C16/0433 , G11C16/102 , G11C16/14 , G11C16/26 , G11C16/3445 , G11C16/3495
Abstract: A nonvolatile memory device includes; a memory cell array including a meta data region storing chip-level information, control logic identifying a target cell in response to a command, machine learning (ML) logic inferring an optimum parameter based on the chip-level information and physical information associated with the target cell applied as inputs to an artificial neural network model, and a buffer memory configured to store weight parameters of the artificial neural network model.
-
公开(公告)号：US11556415B2
公开(公告)日：2023-01-17
申请号：US17397321
申请日：2021-08-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sehwan Park , Jinyoung Kim , Ilhan Park , Youngdeok Seo
Abstract: A memory device may determine cell count information from a threshold voltage distribution of memory cells and may determine a detection case based on the cell count information when an error in read data, received from the memory device performing a read operation is not corrected. A memory controller may control the memory device to execute a read operation using a development time determined in consideration of an offset voltage of a read voltage corresponding to the detection case. When an error in the read data is successfully corrected, the memory controller may update a table, stored in the memory controller, using a dynamic offset voltage obtained by inputting the cell count information to a machine learning model.
-
9.发明申请公开(公告)号：US20130106904A1
公开(公告)日：2013-05-02
申请号：US13662649
申请日：2012-10-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Youngjoo Park , Sehwan Park
IPC: G09G5/00
CPC classification number: G06F3/04817 , G06F3/04842 , G06F3/04883 , G06F2203/04803 , G06F2203/04808 , H04M1/72544 , H04M1/72583 , H04M2250/22
Abstract: A method of outputting background content, which includes outputting a complex area by outputting a background content area in which a background content designated as a start content is output and outputting a function selection area to the background content area, the function selection area including items for selecting at least one specific function supported by a terminal, receiving an input signal for removing the function selection area, and outputting a background screen including only the background content area according to the received input signal for removing the function selection area.
Abstract translation: 一种输出背景内容的方法，包括通过输出背景内容区域输出复合区域，其中指定为开始内容的背景内容被输出并且向后台内容区域输出功能选择区域，功能选择区域包括： 选择由终端支持的至少一个特定功能，接收用于去除功能选择区域的输入信号，以及根据所接收的输入信号输出仅包括背景内容区域的背景屏幕，以移除功能选择区域。
-
10.发明申请公开(公告)号：US20130097447A1
公开(公告)日：2013-04-18
申请号：US13653974
申请日：2012-10-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sehwan Park , Youngjoo Park , Jinhee Choi
IPC: G06F1/00
CPC classification number: G06F1/3246 , G06F1/3228
Abstract: A method of controlling a sleep mode of a portable terminal is provided. The method includes setting a sleep mode timer according to a default setting; displaying, upon reaching a predetermined time point before expiration of the sleep mode timer, a notice screen including the sleep mode timer and a timer setting area for re-setting the sleep mode timer according to a temporary setting; and entering, when a sleep mode timer temporary resetting command is received while the notice screen is displayed, a screen maintaining mode in which the sleep mode timer is temporarily re-set from the default setting to a temporary setting according to the sleep mode timer temporary resetting command.
Abstract translation: 提供了一种控制便携式终端的睡眠模式的方法。 该方法包括根据默认设置设置睡眠模式定时器; 在到达睡眠模式计时器到期前的预定时间点之前，显示包括睡眠模式定时器的通知画面和用于根据临时设置重新设置睡眠模式定时器的定时器设置区域; 并且当在显示通知画面的同时接收到睡眠模式定时器临时复位命令时，进入睡眠模式定时器根据睡眠模式定时器临时从默认设置临时重新设置为临时设置的画面维持模式 复位命令。
-
-
-
-
-
-
-
-
-
Search Results
64
records
(took 0.043 seconds)
