公开(公告)号：US20220176301A1

公开(公告)日：2022-06-09

申请号：US17536048

申请日：2021-11-28

Applicant: Samsung Electronics Co., Ltd. ,  CSK Inc.

Inventor： Seo Young MAENG ,  Il Jun JEON ,  Su Ji GIM ,  Jin Hong KIM ,  Young Seok ROH ,  Jong Yong BAE ,  Jung Joon PYEON

IPC: B01D46/76 ,  H01L21/02 ,  B01D46/24 ,  B01D46/64 ,  B01D46/00 ,  B01D53/04 ,  C23C16/34 ,  C23C16/455 ,  C23C16/44

Abstract: A method of fabricating a semiconductor device includes providing a wafer inside a process chamber, performing an ALD (atomic layer deposition) process inside the process chamber to deposit titanium nitride on the wafer, providing a process gas used for the ALD process to a scrubber, filtering a first powder contained in the process gas, using a filter unit disposed in the scrubber and including a plurality of filters, adsorbing a second powder remaining in the process gas after passing through the filter unit, using a fin structure extending in a vertical direction inside the filter unit, and exhausting the process gas, from which the first and second powders are removed, from the scrubber.

公开(公告)号：US20230238226A1

公开(公告)日：2023-07-27

申请号：US17974045

申请日：2022-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo Hyun LEE ,  Su Ji GIM ,  Dong Jun KA ,  Kyung Nam KANG ,  Hong Sik PARK ,  Deok Cheon SON ,  Jeong Yeon SONG ,  Sun Hee CHOY

IPC: H01J37/32 ,  H01L21/285 ,  C23C16/505 ,  C23C16/44 ,  C23C16/455

CPC classification number: H01J37/32816 ,  H01J37/32743 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/28568 ,  C23C16/505 ,  C23C16/4405 ,  C23C16/45565 ,  C23C16/45536 ,  H01J2237/3321 ,  H01J37/32862 ,  H01J2237/182 ,  H01J37/32082

Abstract: A semiconductor device manufacturing method comprising loading a substrate into a substrate treatment apparatus, performing a deposition process on the substrate, and cleaning the substrate treatment apparatus. The substrate treatment apparatus includes a housing defining a treatment area in which the deposition process is performed, a gas supply supplying a first process gas at a flow rate of 1000 sccm to 15000 sccm and supplying a second process gas, a remote plasma supply connected to the gas supply, generating a first process plasma and a second process plasma by applying RF power to plasma-process the first process gas and the second process gas, and a shower head installed in the housing to supply the first process plasma and the second process plasma to the treatment area. The second process plasma cleans a membrane material deposited on an inner wall of the housing.