中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

17 records (took 0.016 seconds)

    IMAGE SENSOR
    2.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20210175269A1

    公开(公告)日：2021-06-10

    申请号：US16996047

    申请日：2020-08-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Masato FUJITA ,  Yunki LEE ,  Eunsub SHIM ,  Kyungho LEE ,  Bumsuk KIM ,  Taehan KIM

    IPC: H01L27/146 ,  H04N5/355 ,  H04N5/369 ,  H04N5/3745

    Abstract: An image sensor includes a first photodiode group, a second photodiode group, a first transfer transistor group, a second transfer transistor group, a floating diffusion region of a substrate in which electric charges generated in the first photodiode group are stored, and a power supply node for applying a power supply voltage to the second photodiode group. A barrier voltage is applied to at least one transfer transistor of the second transfer transistor group. The power supply voltage allows electric charges, generated in the second photodiode group, to migrate to the power supply node, and the barrier voltage forms a potential barrier between the second photodiode group and the floating diffusion region.

    IMAGE SENSOR
    3.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20240088176A1

    公开(公告)日：2024-03-14

    申请号：US18319612

    申请日：2023-05-18

    Applicant: Samsung electronics Co., Ltd.

    Inventor： Juyeong KIM ,  Changhyun PARK ,  Eunsub SHIM

    IPC: H01L27/146 ,  H04N25/57 ,  H04N25/77 ,  H04N25/78

    CPC classification number: H01L27/14609 ,  H01L27/14643 ,  H04N25/57 ,  H04N25/77 ,  H04N25/78

    Abstract: An image sensor includes a pixel array in which a plurality of pixels are arranged, wherein each of the pixels includes a photodiode, a transfer transistor, first to third floating diffusion nodes, a first capacitor, a second capacitor, a third capacitor, a first switch transistor, a second switch transistor, and a reset transistor. The second switch transistor is configured to turn off in a first period and to turn on in a second period of an exposure period of the photodiode, and the reset transistor is configured to turn on in the first period and to turn off in the second period of the exposure period of the photodiode.

    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME
    4.
    发明公开
    IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME 审中-公开

    公开(公告)号：US20230362500A1

    公开(公告)日：2023-11-09

    申请号：US18140324

    申请日：2023-04-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Eunsub SHIM

    IPC: H04N25/10 ,  H04N25/42

    CPC classification number: H04N25/10 ,  H04N25/42

    Abstract: The present disclosure provides image sensor and electronic devices including image sensors. In some embodiments, the image sensor includes a shared pixel including four subpixels that have a 2×2 structure sharing a floating diffusion (FD) region, a plurality of unit pixels surrounding the FD region and arranged apart from one another through a deep trench isolation, a first transfer transistor disposed adjacent to the FD region in each of the plurality of unit pixels, a reset transistor provided in a first unit pixel of the plurality of unit pixels and disposed at an outer portion of the shared pixel, and a source follower transistor provided in a second unit pixel and disposed at the outer portion of the shared pixel. The FD region is coupled, through a metal wiring, to a source region of the reset transistor and a gate of the source follower transistor.

    IMAGE SENSOR AND OPERATING METHOD THEREOF
    5.
    发明申请
    IMAGE SENSOR AND OPERATING METHOD THEREOF 有权

    公开(公告)号：US20230008501A1

    公开(公告)日：2023-01-12

    申请号：US17853032

    申请日：2022-06-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eunsub SHIM ,  Changhyun PARK ,  Kyungho LEE

    IPC: H04N5/353 ,  H04N5/378 ,  H04N5/3745 ,  H04N5/343

    Abstract: An image sensor and an operating method of the image sensor may include a pixel array including a plurality of pixels; a controller configured to generate a pre-shutter driving signal associated with a pre-shutter operation, the pre-shutter driving signal generated before a first shutter operation and a first read operation corresponding to photographing a first frame is performed; a row driver configured to drive first control signals to the pixel array based on the pre-shutter driving signal, the first control signals associated with the pre-shutter operation; and the pixel array is configured to perform the pre-shutter operation in response to the first control signals, wherein levels of the first control signals correspond to levels of second control signals, the second control signals associated with the first read operation.

    IMAGE SENSOR CONTROLLING A CONVERSION GAIN IMAGING DEVICE HAVING THE SAME, AND METHOD OF OPERATING THE SAME
    6.
    发明申请
    IMAGE SENSOR CONTROLLING A CONVERSION GAIN IMAGING DEVICE HAVING THE SAME, AND METHOD OF OPERATING THE SAME 有权

    公开(公告)号：US20220345649A1

    公开(公告)日：2022-10-27

    申请号：US17860878

    申请日：2022-07-08

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jungbin YUN ,  Hwanwoong KIM ,  Eunsub SHIM ,  Kyungho LEE ,  Hongsuk LEE

    IPC: H04N5/355 ,  H04N5/343 ,  H04N5/369 ,  H04N5/374

    Abstract: Provided is an image sensor including a first pixel including a first floating diffusion region and a second floating diffusion region, a second pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, a third pixel including a first floating diffusion region and a second floating diffusion region, and a fourth pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, wherein the second floating diffusion region of the first pixel and the second floating diffusion region of the second pixel are connected through a first metal line, and wherein the third floating diffusion region of the second pixel and the third floating diffusion region of the third pixel are connected through a second metal.

    IMAGE SENSOR INCLUDING SHARED PIXELS
    7.
    发明申请
    IMAGE SENSOR INCLUDING SHARED PIXELS 有权

    公开(公告)号：US20220190005A1

    公开(公告)日：2022-06-16

    申请号：US17687805

    申请日：2022-03-07

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eunsub SHIM

    IPC: H01L27/146

    Abstract: An image sensor may include a first shared pixel region and a first isolation layer on a substrate, the first isolation layer defining the first shared pixel region. The first shared pixel region may include photo-sensing devices in sub-pixel regions and a first floating diffusion region connected to the photo-sensing devices. The sub-pixel regions may include a first sub-pixel region and a second sub-pixel region that constitute a first pixel group region. The sub-pixel regions may include a third sub-pixel region and a fourth sub-pixel region that constitute a second pixel group region. The first shared pixel region may include first and second well regions doped with first conductivity type impurities. The second well region may be spaced apart from the first well region. The first pixel group region may share a first well region. The second pixel group region may share the second well region.

    IMAGE SENSOR
    10.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20240064436A1

    公开(公告)日：2024-02-22

    申请号：US18198882

    申请日：2023-05-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Eunsub SHIM

    IPC: H04N25/771 ,  H04N25/772 ,  H04N25/704

    CPC classification number: H04N25/771 ,  H04N25/772 ,  H04N25/704

    Abstract: An image sensor including: a plurality of first photoelectric conversion elements included in a first region of a pixel; a plurality of second photoelectric conversion elements included in a second region of the pixel; a first overflow capacitor connected to the plurality of first photoelectric conversion elements to store overflow charges of the first photoelectric conversion elements; a second overflow capacitor connected to the plurality of second photoelectric conversion elements to store overflow charges of the second photoelectric conversion elements; and one or more microlenses disposed on the pixel.

Patent Agency Ranking