摘要:
A method for a VPX banked architecture. The method of one embodiment first segments a memory array into at least two banks. Each bank including memory cells. The banks are provided with a supply voltage.
摘要:
A method for a VPX banked architecture. The method of one embodiment first segments a memory array into at least two banks. Each bank including memory cells. The banks are provided with a supply voltage.
摘要:
A method and apparatus to segment a programmable non-volatile memory array into at least two banks. The banks include memory cells. Each bank in the at least two banks is provided with a local programming voltage. Each local programming voltage is independent of the other local programming voltages supplied to the other banks.
摘要:
A system and technique is disclosed for writing data in a cross-point memory. The state of one or more memory cells of the cross-point memory are sensed and then are continued to be selected and left on. It is then determined which of the one or more memory cells are to change state based on incoming user data that is to be written into the one or more memory cells. The one or more memory cells determined to change state and are still selected to be on are then written by applying a write-current pulse to the memory cells. In one exemplary embodiment, the one or more memory cells comprise one or more phase-change-type memory cell devices.
摘要:
A method for voltage detection and lockout. The method of one embodiment first compares a reference voltage to a supply voltage to determine whether the voltage supply voltage is greater than the reference voltage. The reference voltage is validated by determining whether the reference voltage is at least a valid voltage potential. An unlock signal is generated if the supply voltage is greater than the reference voltage and if the reference voltage is valid.
摘要:
A method for voltage detection and lockout. The method of one embodiment first compares a reference voltage to a supply voltage to determine whether the voltage supply voltage is greater than the reference voltage. The reference voltage is validated by determining whether the reference voltage is at least a valid voltage potential. An unlock signal is generated if the supply voltage is greater than the reference voltage and if the reference voltage is valid.
摘要:
A method for generating a positive temperature correlated clock frequency is described. The method comprises conducting current through a resistor to charge a capacitor. When the capacitor is charged to a trip point of the inverter at the input of the inverter chain, a transition in an output signal of an inverter chain is triggered. The capacitor is discharged through a grounding device when the output signal activates said grounding device.
摘要:
A programmable logic device that includes a voltage input and a detection circuit coupled to the voltage input is described. The detection circuit detects whether a voltage applied to the voltage input exceeds a predetermined value. The programmable logic device also includes a configuration circuit coupled to the detection circuit. The configuration circuit configures the programmable logic device to receive a current sufficient for program and erase operations through the voltage input in response to the detection circuit detecting that the voltage exceeds the predetermined value.
摘要:
A circuit is described as a generating supply-independent voltage reference. In MOS technology, a current mirror section incorporating a pair of N-channel and W-channel tracking devices are coupled to a power supply V.sub.cc for generating a voltage reference output that is directly proportional to V.sub.tn -V.sub.tw. V.sub.tn is the gate threshold voltage of the N-channel device, while V.sub.tw is the gate threshold voltage of W-channel device. A start-up circuit is further coupled to the power supply V.sub.cc and to the current mirror section for maintaining the operating point V.sub.1 of the circuit that is independent of supply voltage. The degree of supply independence can be further increased by adding a pair of P-channel device to the output of the present invention. Thus, the present invention generates a voltage reference that is independent from power supply, temperature and process while minimizing power dissipation. When the present invention replaces the power supply to the sensing circuit of non-volatile memory devices such as an EPROM the overshoot encountered during the read mode is minimized. It follows that the present invention not only solves one of the key yield losses seen on non-volatile memory devices but also improves the access time for the same devices.
摘要:
Two parallel valid data detectors are provided to detect whether a sinusoidal electrical signal from a twisted pair medium represents valid data. One handles phase 0 degree starting sinusoidal electrical signal, the other handle phase 180 degree. In either case, the valid data detectors receive two series of pulses as input, indicating positive and negative differences respectively between RD and RD from the twisted pair medium. In response, if the valid data detector detects the proper data pattern within a predetermined time frame, it outputs a signal indicating the detection of valid data. The "phase 0" valid data detector looks for a high to low and back to high data pattern, whereas, the "phase 180" valid data detector looks for a low to high and back to low data pattern. Additionally, a signal magnitude detector is provided to detect magnitude differences between RD+ and RD- from the twisted pair medium, and generate the positive and a negative series of pulses for the valid data detectors, as long as the magnitude differences exceeded a predetermined minimum threshold. Furthermore, a signal synchronizer is provided to receive the valid data detection signal from either valid data detector, and synchronize the generated signal to the internal clock of the receiving circuit.