Abstract:
A method for voltage detection and lockout. The method of one embodiment first compares a reference voltage to a supply voltage to determine whether the voltage supply voltage is greater than the reference voltage. The reference voltage is validated by determining whether the reference voltage is at least a valid voltage potential. An unlock signal is generated if the supply voltage is greater than the reference voltage and if the reference voltage is valid.
Abstract:
A method for voltage detection and lockout. The method of one embodiment first compares a reference voltage to a supply voltage to determine whether the voltage supply voltage is greater than the reference voltage. The reference voltage is validated by determining whether the reference voltage is at least a valid voltage potential. An unlock signal is generated if the supply voltage is greater than the reference voltage and if the reference voltage is valid.
Abstract:
A method and apparatus to segment a programmable non-volatile memory array into at least two banks. The banks include memory cells. Each bank in the at least two banks is provided with a local programming voltage. Each local programming voltage is independent of the other local programming voltages supplied to the other banks.
Abstract:
A method for generating a positive temperature correlated clock frequency is described. The method comprises conducting current through a resistor to charge a capacitor. When the capacitor is charged to a trip point of the inverter at the input of the inverter chain, a transition in an output signal of an inverter chain is triggered. The capacitor is discharged through a grounding device when the output signal activates said grounding device.
Abstract:
A method for a VPX banked architecture. The method of one embodiment first segments a memory array into at least two banks. Each bank including memory cells. The banks are provided with a supply voltage.
Abstract:
A method for a VPX banked architecture. The method of one embodiment first segments a memory array into at least two banks. Each bank including memory cells. The banks are provided with a supply voltage.
Abstract:
Methods and apparatus related to PCMS (Phase Change Memory with Switch) write error detection are described. In one embodiment, a first storage unit stores a single bit to indicate whether an error corresponding to a write operation in any of one or more PCMS devices has occurred. Also, one or more storage units each store a plurality of bits to indicate whether the error corresponding to the write operation has occurred in a partition of a plurality of partitions of the one or more PCMS devices. Other embodiments are also disclosed and claimed.
Abstract:
Methods and apparatuses for performing deduplication in a hybrid storage aggregate are provided. In one example, a method includes operating a hybrid storage aggregate that includes a plurality of tiers of different types of physical storage media. The method includes identifying a first storage block and a second storage block of the hybrid storage aggregate that contain identical data and identifying caching statuses of the first storage block and the second storage block. The method also includes deduplicating the first storage block and the second storage block based on the caching statuses of the first storage block and the second storage block.
Abstract:
The invention features a method for controlling storage of data in a plurality of storage devices each including storage blocks, for example, in a RAID array. The method includes receiving a plurality of write requests associated with data, and buffering the write requests. A file system defines a group of storage blocks, responsive to disk topology information. The group includes a plurality of storage blocks in each of the plurality of storage devices. Each data block of the data to be written is associated with a respective one of the storage blocks, for transmitting the association to the plurality of storage devices.
Abstract:
Described herein are method and apparatus for storing data to a low-latency random read memory (LLRRM) device using non-aligned data striping, the LLRRM device being implemented on a storage system. The LLRRM device may comprise a bank comprising a plurality of memory chips, each chip being simultaneously accessible for storing data on a plurality of erase-units (EUs). A storage operating system may maintain, for each chip, a reserve data structure listing reserve EUs and a remapping data structure for tracking remappings between defective EUs to reserve EUs in the chip. A defective EU in a chip may be mapped to a reserve EU from the reserve data structure. Upon receiving a data block to be stored to the LLRRM device at the defective EU, the storage operating system may stripe the received data block across a plurality of chips in a non-aligned manner using the remapped reserve EU.