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    THIN FILM TRANSISTOR HAVING N-TYPE AND P-TYPE CIS THIN FILMS AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    THIN FILM TRANSISTOR HAVING N-TYPE AND P-TYPE CIS THIN FILMS AND METHOD OF MANUFACTURING THE SAME 失效
    具有N型和P型CIS薄膜的薄膜晶体管及其制造方法

    公开(公告)号：US20110045633A1

    公开(公告)日：2011-02-24

    申请号：US12938833

    申请日：2010-11-03

    申请人： Sang Su LEE ,  Kibong SONG ,  Jeong Dae SUH ,  Keongam KIM ,  Doo-Hee CHO

    发明人： Sang Su LEE ,  Kibong SONG ,  Jeong Dae SUH ,  Keongam KIM ,  Doo-Hee CHO

    IPC分类号： H01L21/06

    CPC分类号： H01L29/78681 ,  H01L29/24

    摘要： Provided is a thin film transistor (TFT) which uses CIS (CuInSe2), including Se, which is a chalcogen-based material, and can provide a rectifying function, and electric and optical switching functions of a diode. The TFT according to the present invention includes, a substrate, a gate electrode formed on a portion of the substrate, an insulating layer covering the substrate and a gate electrode, a plurality of CIS (CuInSe2) films formed on the insulating layer so as to cover the region where the gate electrode is formed; and source/drain regions separated from each other so as to comprise a trench exposing a portion of a surface of the CIS films.

    摘要翻译： 提供了使用CIS（CuInSe2）的薄膜晶体管（TFT），其包括作为硫属元素材料的Se，并且可以提供二极管的电和光开关功能。 根据本发明的TFT包括：基板，形成在基板的一部分上的栅电极，覆盖基板的绝缘层和栅极电极，形成在绝缘层上的多个CIS（CuInSe 2）膜，以便 覆盖形成栅电极的区域; 和源极/漏极区域彼此分离，以便包括暴露CIS膜表面的一部分的沟槽。

    OPTOCONDUCTIVE COMPOUND AND METHOD OF PRODUCING THE SAME
    2.
    发明申请
    OPTOCONDUCTIVE COMPOUND AND METHOD OF PRODUCING THE SAME 有权
    光学化合物及其制备方法

    公开(公告)号：US20080185528A1

    公开(公告)日：2008-08-07

    申请号：US11950650

    申请日：2007-12-05

    申请人： Kibong SONG ,  Kyeongam KIM ,  Sang Su LEE ,  Doo-Hee CHO

    发明人： Kibong SONG ,  Kyeongam KIM ,  Sang Su LEE ,  Doo-Hee CHO

    IPC分类号： G01T1/24 ,  B05D5/12 ,  C01B17/00

    CPC分类号： C01B19/002 ,  C01P2002/72 ,  C01P2006/60

    摘要： Conventional optoconductive compounds, such as CIS or CdTe include scarce indium or environmentally-unfriendly cadmium. On the other hand, an optoconductive compound according to the present invention has high optoconductive efficiency without inclusion of indium and cadmium, wherein the optoconductive compound according to the present invention is represented by AXYY′ where A is a Group 11 element, X is a Group 15 element, and Y and Y′ are Group 16 elements in which Y and Y′ can be identical to or different from each other.

    摘要翻译： 常规的光电导化合物，如CIS或CdTe，包括稀少的铟或环境不友好的镉。 另一方面，根据本发明的光导化合物在不包含铟和镉的情况下具有高的光导效率，其中根据本发明的光导化合物由AXYY'表示，其中A是第11族元素​​，X是基团 15元素，Y和Y'是Y和Y'可以相同或不同的16族元素。

    THIN FILM TRANSISTOR HAVING CHALCOGENIDE LAYER AND METHOD OF FABRICATING THE THIN FILM TRANSISTOR
    3.
    发明申请
    THIN FILM TRANSISTOR HAVING CHALCOGENIDE LAYER AND METHOD OF FABRICATING THE THIN FILM TRANSISTOR 审中-公开
    具有氯化铝层的薄膜晶体管和薄膜晶体管的制备方法

    公开(公告)号：US20080083924A1

    公开(公告)日：2008-04-10

    申请号：US11869175

    申请日：2007-10-09

    申请人： Kibong SONG ,  Doo-Hee CHO ,  Kyeongam KIM ,  Sang LEE

    发明人： Kibong SONG ,  Doo-Hee CHO ,  Kyeongam KIM ,  Sang LEE

    IPC分类号： H01L31/0272 ,  H01L21/12 ,  H01L29/04

    CPC分类号： H01L29/78681 ,  H01L29/78684 ,  H01L31/1136

    摘要： Provided are a thin film transistor (TFT) having a chalcogenide layer and a method of fabricating the TFT. The TFT includes an amorphous chalcogenide layer, a crystalline chalcogenide layer, source and drain electrodes, and a gate electrode. The amorphous chalcogenide layer forms a channel layer. The crystalline chalcogenide layer is formed on both sides of the amorphous layer to form source and drain regions. The source and drain electrodes are formed on both sides of the amorphous chalcogenide layer and connected to the source and drain regions of the crystalline chalcogenide layer, respectively. The gate electrode is formed above or under the channel layer with a gate insulation layer being interposed between the channel layer and the gate electrode. Therefore, the TFT can include an optical TFT structure using the chalcogenide layers as an optical conductive layer and/or an electric TFT providing diode rectification using the chalcogenide layers.

    摘要翻译： 提供了具有硫族化物层的薄膜晶体管（TFT）和制造TFT的方法。 TFT包括无定形硫族化物层，结晶硫族化物层，源极和漏极以及栅电极。 无定形硫族化物层形成通道层。 结晶硫族化物层形成在非晶层的两侧以形成源区和漏区。 源极和漏极分别形成在非晶态硫族化物层的两侧，并分别连接到结晶硫族化物层的源极和漏极区域。 栅电极形成在沟道层的上方或下方，栅极绝缘层插入沟道层和栅电极之间。 因此，TFT可以包括使用硫族化物层作为光导体层的光学TFT结构和/或使用硫族化物层提供二极管整流的电TFT。

    ORGANIC-INORGAIC HYBRID POLYAMIC ESTER, METHOD OF FABRICATING THE SAME, AND METHOD OF FABRICATING A FILM THEREOF
    4.
    发明申请
    ORGANIC-INORGAIC HYBRID POLYAMIC ESTER, METHOD OF FABRICATING THE SAME, AND METHOD OF FABRICATING A FILM THEREOF 审中-公开
    有机无机混合聚酰胺，其制备方法及其制备方法

    公开(公告)号：US20130156960A1

    公开(公告)日：2013-06-20

    申请号：US13619706

    申请日：2012-09-14

    申请人： Seung Koo PARK ,  Jeong Ik LEE ,  Doo-Hee CHO ,  Hye Yong CHU ,  Chul Woong JOO

    发明人： Seung Koo PARK ,  Jeong Ik LEE ,  Doo-Hee CHO ,  Hye Yong CHU ,  Chul Woong JOO

    IPC分类号： C08L77/06 ,  B05D3/02 ,  B05D7/24

    CPC分类号： C08L79/08 ,  C08G73/1039 ,  C08G73/1053 ,  C08G73/1067 ,  C08G73/1071 ,  C09D179/08

    摘要： Provided are organic-inorganic hybrid polyamic ester, method of fabricating the same, and method of fabricating a film thereof. The polyamic ester is formed by chemically reacting an inorganic precursor containing inorganic and/or metal element with a polyamic acid having two carboxyl acid of good reactivity per a polymer repeating unit. The inorganic alkoxide is hydrolyzed to be the corresponding inorganic hydroxide. The hydroxyl group is reacted with the carboxylic acid of the polyamic acid and with the hydroxyl group of the other inorganic hydroxide. Therefore, the polyamic ester can steadily include more inorganic materials. The content amount of the inorganic material is relatively high, so that the polyamic ester may have superior refractive index, chemical and heat resistances.

    摘要翻译： 提供有机 - 无机杂化聚酰胺酯，其制备方法及其制备方法。 通过使含有无机和/或金属元素的无机前体与具有两个聚合物重复单元具有良好反应性的羧酸的聚酰胺酸化学反应形成聚酰胺酯。 将无机醇盐水解成相应的无机氢氧化物。 羟基与聚酰胺酸的羧酸和其它无机氢氧化物的羟基反应。 因此，聚酰胺酯可以稳定地包含更多的无机材料。 无机材料的含量相对较高，因此聚酰胺酯可具有优异的折射率，耐化学性和耐热性。

    ORGANIC ELECTROLUMINESCENT DEVICE AND METHOD FOR MANUFACTURING THEREOF
    5.
    发明申请
    ORGANIC ELECTROLUMINESCENT DEVICE AND METHOD FOR MANUFACTURING THEREOF 审中-公开
    有机电致发光器件及其制造方法

    公开(公告)号：US20130181242A1

    公开(公告)日：2013-07-18

    申请号：US13359443

    申请日：2012-01-26

    申请人： Doo-Hee CHO

    发明人： Doo-Hee CHO

    IPC分类号： H01L51/52 ,  H01L51/56 ,  B82Y99/00

    CPC分类号： H01L51/5268 ,  B82Y20/00 ,  H01L51/0096 ,  H01L2251/105 ,  Y02E10/549 ,  Y02P70/521

    摘要： Disclosed is an organic electroluminescent device and a method for manufacturing thereof, the device including a light emitting part in which a substrate, a first electrode, an organic light emitting layer and a second electrode, and a nano structure including a first opening part randomly distributed between the substrate and the first electrode, wherein the nano structure includes at least anyone of polyimide, epoxy, polycarbonate, PVC, PVP, polyethylene, polyacryl and perylene, each having a refractive index in the range of 1.3˜1.5, whereby a light extraction can be improved by restricting a reflective light from an interface between the substrate and the first electrode.

    摘要翻译： 公开了一种有机电致发光器件及其制造方法，该器件包括其中衬底，第一电极，有机发光层和第二电极以及包括第一开口部分的随机分布的纳米结构的发光部分 在所述基板和所述第一电极之间，其中所述纳米结构包括折射率在1.3〜1.5范围内的聚酰亚胺，环氧树脂，聚碳酸酯，PVC，PVP，聚乙烯，聚丙烯酸酯和苝中的至少任一者，由此提取光 可以通过限制来自基板和第一电极之间的界面的反射光来改善。