CHEMICAL SUPPLIER, PROCESSING APPARATUS INCLUDING THE CHEMICAL SUPPLIER
    1.
    发明申请
    CHEMICAL SUPPLIER, PROCESSING APPARATUS INCLUDING THE CHEMICAL SUPPLIER 审中-公开
    化学供应商,包括化学供应商的加工设备

    公开(公告)号:US20140231010A1

    公开(公告)日:2014-08-21

    申请号:US14183994

    申请日:2014-02-19

    IPC分类号: H01L21/67

    摘要: A chemical supplier includes a chemical reservoir containing a chemical mixture at a room temperature, an inner space of the chemical reservoir being separated from surroundings, a supply line through which the chemical mixture is supplied to a process chamber from the chemical reservoir, an inline heater positioned on the supply line and heating the chemical mixture in the supply line to a process temperature, and a power source driving the chemical mixture to move the chemical mixture toward the process chamber.

    摘要翻译: 化学品供应商包括在室温下含有化学混合物的化学容器,化学容器的内部空间与周围环境分离,供应管线,化学混合物通过该供应管线从化学容器供应到处理室,一体式加热器 定位在供应管线上并将供应管线中的化学混合物加热至处理温度,以及驱动化学混合物以将化学混合物移向处理室的电源。

    METHOD OF FABRICATING SEMICONDUCTOR DEVICE
    2.
    发明申请
    METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号:US20130023100A1

    公开(公告)日:2013-01-24

    申请号:US13479679

    申请日:2012-05-24

    IPC分类号: H01L21/336

    摘要: A method of fabricating a semiconductor device, the method including forming on a substrate a transistor that includes a gate electrode and a source and drain region, forming an interlayer insulating film on the transistor, forming a contact hole in the interlayer insulating film to expose a top surface of the source and drain region, and a thin film is formed at an interface between the contact hole and the exposed top surface of the source and drain region. The method further including selectively removing at least a portion of the thin film by performing an etching process in a non-plasma atmosphere, forming an ohmic contact film on the source and drain region where at least a portion of the thin film was selectively removed, and forming a contact plug by filling the contact hole with a conductive material.

    摘要翻译: 一种制造半导体器件的方法,所述方法包括在衬底上形成包括栅极和源极和漏极区的晶体管,在所述晶体管上形成层间绝缘膜,在所述层间绝缘膜中形成接触孔以暴露出 源极和漏极区域的顶表面,并且在接触孔和源极和漏极区域的暴露顶表面之间的界面处形成薄膜。 该方法还包括通过在非等离子体气氛中进行蚀刻工艺来选择性地去除薄膜的至少一部分,在选择性地去除薄膜的至少一部分的源区和漏区上形成欧姆接触膜, 以及通过用导电材料填充接触孔来形成接触塞。