公开(公告)号：US20160133512A1

公开(公告)日：2016-05-12

申请号：US14747316

申请日：2015-06-23

申请人： Woojin LEE ,  VietHa NGUYEN ,  Wookyung YOU ,  Doo-Sung YUN ,  Hyunbae LEE ,  Byunghee KIM ,  Sang Hoon AHN ,  Seungyong YOO ,  Naein LEE ,  Hoyun JEON

发明人： Woojin LEE ,  VietHa NGUYEN ,  Wookyung YOU ,  Doo-Sung YUN ,  Hyunbae LEE ,  Byunghee KIM ,  Sang Hoon AHN ,  Seungyong YOO ,  Naein LEE ,  Hoyun JEON

IPC分类号： H01L21/768 ,  H01L21/311 ,  H01L21/321 ,  H01L21/31

CPC分类号： H01L21/76832 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32134 ,  H01L21/76807 ,  H01L21/76834

摘要： A method of manufacturing the semiconductor device includes providing a first interlayer dielectric layer having a conductive pattern, sequentially forming a first etch stop layer, a second etch stop layer, a second interlayer dielectric layer and a mask pattern on the first interlayer dielectric layer, forming an opening in the second interlayer dielectric layer using the mask pattern as a mask, the opening exposing the second etch stop layer, and performing an etching process including simultaneously removing the mask pattern and the second etch stop layer exposed by the opening to expose the first etch stop layer.

摘要翻译： 制造半导体器件的方法包括提供具有导电图案的第一层间电介质层，在第一层间介质层上依次形成第一蚀刻停止层，第二蚀刻停止层，第二层间电介质层和掩模图案，形成 使用掩模图案作为掩模的第二层间电介质层中的开口，暴露第二蚀刻停止层的开口，以及执行蚀刻处理，包括同时去除由开口暴露的掩模图案和第二蚀刻停止层，以暴露第一蚀刻停止层 蚀刻停止层。

公开(公告)号：US10192782B2

公开(公告)日：2019-01-29

申请号：US14747316

申请日：2015-06-23

申请人： Woojin Lee ,  VietHa Nguyen ,  Wookyung You ,  Doo-Sung Yun ,  Hyunbae Lee ,  Byunghee Kim ,  Sang Hoon Ahn ,  Seungyong Yoo ,  Naein Lee ,  Hoyun Jeon

发明人： Woojin Lee ,  VietHa Nguyen ,  Wookyung You ,  Doo-Sung Yun ,  Hyunbae Lee ,  Byunghee Kim ,  Sang Hoon Ahn ,  Seungyong Yoo ,  Naein Lee ,  Hoyun Jeon

IPC分类号： H01L21/768 ,  H01L21/31 ,  H01L21/311 ,  H01L21/321 ,  H01L21/3213

摘要： A method of manufacturing the semiconductor device includes providing a first interlayer dielectric layer having a conductive pattern, sequentially forming a first etch stop layer, a second etch stop layer, a second interlayer dielectric layer and a mask pattern on the first interlayer dielectric layer, forming an opening in the second interlayer dielectric layer using the mask pattern as a mask, the opening exposing the second etch stop layer, and performing an etching process including simultaneously removing the mask pattern and the second etch stop layer exposed by the opening to expose the first etch stop layer.

公开(公告)号：US20090026618A1

公开(公告)日：2009-01-29

申请号：US12220527

申请日：2008-07-25

申请人： Hyun-Su Kim ,  Daeyong Kim ,  Eun-Ok Lee ,  Byunghee Kim ,  Jang-Hee Lee ,  Eun-Ji Jung ,  Gilheyun Choi

发明人： Hyun-Su Kim ,  Daeyong Kim ,  Eun-Ok Lee ,  Byunghee Kim ,  Jang-Hee Lee ,  Eun-Ji Jung ,  Gilheyun Choi

IPC分类号： H01L21/768 ,  H01L23/48

CPC分类号： H01L21/76868 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76871 ,  H01L23/485 ,  H01L27/105 ,  H01L27/10885 ,  H01L27/10888 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/24 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a method of forming a semiconductor device, and a semiconductor device formed according to the method, an insulating layer is provided on an underlying contact region of the semiconductor device. An opening is formed in the insulating layer to expose the underlying contact region. A seed layer is provided on sidewalls and a bottom of the opening, the seed layer comprising cobalt. A barrier layer of conductive material is provided in a lower portion of the opening, the seed layer being exposed on sidewalls of an upper portion of the opening. A metal layer is provided on the barrier layer in the opening to form an interlayer contact, the metal layer contacting the seed layer at the sidewalls of the upper portion of the opening.

摘要翻译： 在形成半导体器件的方法和根据该方法形成的半导体器件中，在半导体器件的下部接触区域上设置绝缘层。 在绝缘层中形成开口以露出下面的接触区域。 种子层设置在开口的侧壁和底部上，籽晶层包含钴。 导电材料的阻挡层设置在开口的下部，籽晶层暴露在开口上部的侧壁上。 金属层设置在开口中的阻挡层上以形成层间接触，金属层在开口上部的侧壁处与种子层接触。

公开(公告)号：US5193021A

公开(公告)日：1993-03-09

申请号：US781088

申请日：1991-10-21

申请人： Byunghee Kim

发明人： Byunghee Kim

IPC分类号： G02F1/1339

CPC分类号： G02F1/13394 ,  G02F1/13392

摘要： A film spacer is formed by individual spacers in strip form which a cover layer covers. To fabricate a liquid crystal cell using the film spacer, the spacer is cut longitudinally to partially form the strips and supported on one side of a lower glass panel. The spacer and panel are portioned to enable a liquid crystal path to be formed between each extending end of the strips and a sealant to be subsequently applied around the periphery of the one side of the lower glass panel. The individual spacers are separated by cutting the blank area from the film spacer at the ends of the strips. The cover layer is removed, while keeping the arrangement of a plurality of spacers and removing only spacers covering desired display areas of the lower panel. A sealant is then provided around the lower glass panel. An upper glass panel is sealed to the lower panel with the spacers inbetween, and liquid crystal is infused through the entrance.

摘要翻译： 膜间隔物由覆盖层覆盖的带状形式的单独间隔物形成。 为了使用膜间隔物制造液晶单元，间隔件被纵向地切割以部分地形成条并且被支撑在下玻璃面板的一侧上。 间隔件和面板被分割成使得能够在每个延伸端之间形成液晶路径，并且随后在下玻璃面板的一侧的周边周围施加密封剂。 通过在条的端部处从膜间隔件切割空白区域来分离各个间隔物。 除去覆盖层，同时保持多个隔离物的布置并且仅去除覆盖下面板的期望的显示区域的间隔物。 然后在下玻璃面板周围设置密封剂。 上玻璃面板密封到下面板，间隔件在其间，液晶通过入口注入。

公开(公告)号：US08786058B2

公开(公告)日：2014-07-22

申请号：US13289576

申请日：2011-11-04

申请人： Kyu-Hee Han ,  Byung-Lyul Park ,  Byunghee Kim ,  Sanghoon Ahn ,  Sangdon Nam ,  Kyoung-Hee Kim

发明人： Kyu-Hee Han ,  Byung-Lyul Park ,  Byunghee Kim ,  Sanghoon Ahn ,  Sangdon Nam ,  Kyoung-Hee Kim

IPC分类号： H01L29/06

CPC分类号： H01L21/76898 ,  H01L21/76802 ,  H01L23/147 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49827 ,  H01L23/49833 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L25/105 ,  H01L25/18 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05008 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05609 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/06182 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/17181 ,  H01L2224/48227 ,  H01L2224/73257 ,  H01L2224/81815 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is provided. The semiconductor device includes a substrate having a via hole comprised of a first region having a first width and a second region having a second width greater than the first width, wherein at least a portion of the substrate is exposed in the via hole, and an insulating region having an air gap spaced apart from and surrounding the first region of the via hole.

摘要翻译： 提供半导体器件。 半导体器件包括具有通孔的衬底，该通孔由具有第一宽度的第一区域和具有大于第一宽度的第二宽度的第二区域组成，其中衬底的至少一部分暴露在通孔中， 绝缘区域具有与通孔的第一区域间隔开并围绕通孔的第一区域的气隙。

公开(公告)号：US20120112361A1

公开(公告)日：2012-05-10

申请号：US13289576

申请日：2011-11-04

申请人： KYU-HEE HAN ,  Byung-Lyul Park ,  Byunghee Kim ,  Sanghoon Ahn ,  Sangdon Nam ,  Kyoung-Hee Kim

发明人： KYU-HEE HAN ,  Byung-Lyul Park ,  Byunghee Kim ,  Sanghoon Ahn ,  Sangdon Nam ,  Kyoung-Hee Kim

IPC分类号： H01L23/48

CPC分类号： H01L21/76898 ,  H01L21/76802 ,  H01L23/147 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49827 ,  H01L23/49833 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L25/105 ,  H01L25/18 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05008 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05609 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/06182 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/17181 ,  H01L2224/48227 ,  H01L2224/73257 ,  H01L2224/81815 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is provided. The semiconductor device includes a substrate having a via hole comprised of a first region having a first width and a second region having a second width greater than the first width, wherein at least a portion of the substrate is exposed in the via hole, and an insulating region having an air gap spaced apart from and surrounding the first region of the via hole.

摘要翻译： 提供半导体器件。 半导体器件包括具有通孔的衬底，该通孔由具有第一宽度的第一区域和具有大于第一宽度的第二宽度的第二区域组成，其中衬底的至少一部分暴露在通孔中， 绝缘区域具有与通孔的第一区域间隔开并围绕通孔的第一区域的气隙。