公开(公告)号：US08940368B2

公开(公告)日：2015-01-27

申请号：US13530924

申请日：2012-06-22

申请人： Choel-Min Jang ,  Myung-Soo Huh ,  Jeong-Ho Yi ,  Cheol-Rae Jo ,  Sang-Joon Seo ,  Seung-Hun Kim ,  Jin-Kwang Kim

发明人： Choel-Min Jang ,  Myung-Soo Huh ,  Jeong-Ho Yi ,  Cheol-Rae Jo ,  Sang-Joon Seo ,  Seung-Hun Kim ,  Jin-Kwang Kim

IPC分类号： C23C16/458 ,  C23C16/455

CPC分类号： C23C16/46 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/4583

摘要： A vapor deposition apparatus includes a stage on which a substrate is mounted; a heater unit that is disposed at a side of the stage and includes a first heater and a second heater, wherein the first heater and the second heater are movable so that the first heater and the second heater are spaced apart from each other or are disposed adjacent to each other; and a nozzle unit that is disposed at a side opposite to the side at which the heater unit is disposed about the stage and includes one or more nozzles.

摘要翻译： 蒸镀装置包括：载置基板的载物台; 加热器单元，其设置在所述台的一侧并且包括第一加热器和第二加热器，其中所述第一加热器和所述第二加热器可移动，使得所述第一加热器和所述第二加热器彼此间隔开或布置 相邻; 以及喷嘴单元，其设置在与所述加热器单元围绕所述台架配置的一侧相对的一侧，并且包括一个或多个喷嘴。

公开(公告)号：US20130266728A1

公开(公告)日：2013-10-10

申请号：US13613804

申请日：2012-09-13

申请人： Sang-Joon Seo ,  Myung-Soo Huh ,  Seung-Hun Kim ,  Jin-Kwang Kim ,  Cheol-Rae Jo ,  Choel-Min Jang ,  Jeong-Ho Yi

发明人： Sang-Joon Seo ,  Myung-Soo Huh ,  Seung-Hun Kim ,  Jin-Kwang Kim ,  Cheol-Rae Jo ,  Choel-Min Jang ,  Jeong-Ho Yi

IPC分类号： C23C16/455

CPC分类号： C23C16/45551

摘要： In a thin film deposition apparatus and a thin film deposition method using the same, a first spraying unit and a second spraying unit which are separately driven are prepared, the first spraying unit is driven to sequentially spray a first deposition source and an inert gas onto a substrate, a chamber is exhausted to remove, from the chamber, excess first deposition sources that are not adsorbed onto the substrate from the chamber, a second spraying unit is driven to sequentially spray a second deposition source and an inert gas onto the substrate, and the chamber is exhausted to remove, from the chamber, excess second deposition sources that are not adsorbed onto the substrate. When the thin film deposition method is used, the unintended generation of microparticles during deposition is sufficiently suppressed.

摘要翻译： 在使用其的薄膜沉积装置和薄膜沉积方法中，制备分别驱动的第一喷射单元和第二喷射单元，驱动第一喷射单元以顺序地将第一沉积源和惰性气体喷射到 衬底，腔室被排出以从腔室中除去未从腔室吸附到衬底上的过量的第一沉积源，驱动第二喷射单元以顺序地将第二沉积源和惰性气体喷射到衬底上， 并且室被排出以从腔室中除去未吸附到基底上的多余的第二沉积源。 当使用薄膜沉积方法时，在沉积期间非常期望的微粒的产生被充分地抑制。

公开(公告)号：US09045826B2

公开(公告)日：2015-06-02

申请号：US13613804

申请日：2012-09-13

申请人： Sang-Joon Seo ,  Myung-Soo Huh ,  Seung-Hun Kim ,  Jin-Kwang Kim ,  Cheol-Rae Jo ,  Choel-Min Jang ,  Jeong-Ho Yi

发明人： Sang-Joon Seo ,  Myung-Soo Huh ,  Seung-Hun Kim ,  Jin-Kwang Kim ,  Cheol-Rae Jo ,  Choel-Min Jang ,  Jeong-Ho Yi

IPC分类号： C23C16/455

CPC分类号： C23C16/45551

摘要： In a thin film deposition apparatus and a thin film deposition method using the same, a first spraying unit and a second spraying unit which are separately driven are prepared, the first spraying unit is driven to sequentially spray a first deposition source and an inert gas onto a substrate, a chamber is exhausted to remove, from the chamber, excess first deposition sources that are not adsorbed onto the substrate from the chamber, a second spraying unit is driven to sequentially spray a second deposition source and an inert gas onto the substrate, and the chamber is exhausted to remove, from the chamber, excess second deposition sources that are not adsorbed onto the substrate. When the thin film deposition method is used, the unintended generation of microparticles during deposition is sufficiently suppressed.

摘要翻译： 在使用其的薄膜沉积装置和薄膜沉积方法中，制备分别驱动的第一喷射单元和第二喷射单元，驱动第一喷射单元以顺序地将第一沉积源和惰性气体喷射到 衬底，腔室被排出以从腔室中除去未从腔室吸附到衬底上的过量的第一沉积源，驱动第二喷射单元以顺序地将第二沉积源和惰性气体喷射到衬底上， 并且室被排出以从腔室中除去未吸附到基底上的多余的第二沉积源。 当使用薄膜沉积方法时，在沉积期间非常期望的微粒的产生被充分地抑制。

公开(公告)号：US20130189433A1

公开(公告)日：2013-07-25

申请号：US13530924

申请日：2012-06-22

申请人： Choel-Min Jang ,  Myung-Soo Huh ,  Jeong-Ho Yi ,  Cheol-Rae Jo ,  Sang-Joon Seo ,  Seung-Hun Kim ,  Jin-Kwang Kim

发明人： Choel-Min Jang ,  Myung-Soo Huh ,  Jeong-Ho Yi ,  Cheol-Rae Jo ,  Sang-Joon Seo ,  Seung-Hun Kim ,  Jin-Kwang Kim

IPC分类号： C23C16/458 ,  C23C16/455

CPC分类号： C23C16/46 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/4583

摘要： A vapor deposition apparatus includes a stage on which a substrate is mounted; a heater unit that is disposed at a side of the stage and includes a first heater and a second heater, wherein the first heater and the second heater are movable so that the first heater and the second heater are spaced apart from each other or are disposed adjacent to each other; and a nozzle unit that is disposed at a side opposite to the side at which the heater unit is disposed about the stage and includes one or more nozzles.

摘要翻译： 蒸镀装置包括：载置基板的载物台; 加热器单元，其设置在所述台的一侧并且包括第一加热器和第二加热器，其中所述第一加热器和所述第二加热器可移动，使得所述第一加热器和所述第二加热器彼此间隔开或布置 相邻; 以及喷嘴单元，其设置在与所述加热器单元围绕所述台架配置的一侧相对的一侧，并且包括一个或多个喷嘴。

公开(公告)号：US08900662B2

公开(公告)日：2014-12-02

申请号：US13572420

申请日：2012-08-10

申请人： Sung-Yong Lee ,  Myung-Soo Huh ,  Choel-Min Jang ,  Cheol-Rae Jo ,  In-Kyo Kim ,  Yong-Suk Lee ,  Mi-Ra An ,  Sang-Joon Seo

发明人： Sung-Yong Lee ,  Myung-Soo Huh ,  Choel-Min Jang ,  Cheol-Rae Jo ,  In-Kyo Kim ,  Yong-Suk Lee ,  Mi-Ra An ,  Sang-Joon Seo

IPC分类号： C23C16/00 ,  C23C16/44

CPC分类号： C23C16/45551 ,  C23C16/4583

摘要： A thin film depositing apparatus and a thin film depositing method used by the thin film depositing apparatus. The thin film depositing apparatus includes a deposition chamber through which a process gas outlet of a deposition source is arranged; a transfer shuttle disposed in the deposition chamber, the transfer shuttle comprising a mounting plate for loading a substrate, the transfer shuttle being reciprocal with respect to the process gas outlet; and at least one bendable auxiliary plate installed at one side of the transfer shuttle, the bendable auxiliary plate closing the process gas outlet when opposite the process gas outlet, the bendable auxiliary plate comprising a folding member for placing the bendable auxiliary plate in each of an unbent state and bent state dependent upon the position of the transfer shuttle.

摘要翻译： 薄膜沉积设备使用的薄膜沉积设备和薄膜沉积方法。 薄膜沉积设备包括沉积室，沉积源的处理气体出口通过其沉积; 设置在所述沉积室中的传送梭，所述传送梭包括用于装载基底的安装板，所述传送梭相对于所述处理气体出口是往复的; 以及安装在所述传送梭的一侧的至少一个可弯曲辅助板，所述可弯曲辅助板在与所述工艺气体出口相对的位置处关闭所述工艺气体出口，所述可弯曲辅助板包括折叠构件，用于将所述可弯曲辅助板放置在 取决于转移梭的位置的弯曲状态和弯曲状态。

公开(公告)号：US20130251902A1

公开(公告)日：2013-09-26

申请号：US13572420

申请日：2012-08-10

申请人： Sung-Yong Lee ,  Myung-Soo Huh ,  Choel-Min Jang ,  Cheol-Rae Jo ,  In-Kyo Kim ,  Yong-Suk Lee ,  Mi-Ra An ,  Sang-Joon Seo

发明人： Sung-Yong Lee ,  Myung-Soo Huh ,  Choel-Min Jang ,  Cheol-Rae Jo ,  In-Kyo Kim ,  Yong-Suk Lee ,  Mi-Ra An ,  Sang-Joon Seo

IPC分类号： C23C16/44 ,  C23C16/00

CPC分类号： C23C16/45551 ,  C23C16/4583

摘要： A thin film depositing apparatus and a thin film depositing method used by the thin film depositing apparatus. The thin film depositing apparatus includes a deposition chamber through which a process gas outlet of a deposition source is arranged; a transfer shuttle disposed in the deposition chamber, the transfer shuttle comprising a mounting plate for loading a substrate, the transfer shuttle being reciprocal with respect to the process gas outlet; and at least one bendable auxiliary plate installed at one side of the transfer shuttle, the bendable auxiliary plate closing the process gas outlet when opposite the process gas outlet, the bendable auxiliary plate comprising a folding member for placing the bendable auxiliary plate in each of an unbent state and bent state dependent upon the position of the transfer shuttle.

摘要翻译： 薄膜沉积设备使用的薄膜沉积设备和薄膜沉积方法。 薄膜沉积设备包括沉积室，沉积源的处理气体出口通过其沉积; 设置在所述沉积室中的传送梭，所述传送梭包括用于装载基底的安装板，所述传送梭相对于所述处理气体出口是往复的; 以及安装在所述传送梭的一侧的至少一个可弯曲辅助板，所述可弯曲辅助板在与所述工艺气体出口相对的位置处关闭所述工艺气体出口，所述可弯曲辅助板包括折叠构件，用于将所述可弯曲辅助板放置在 取决于转移梭的位置的弯曲状态和弯曲状态。

公开(公告)号：US20130171335A1

公开(公告)日：2013-07-04

申请号：US13535268

申请日：2012-06-27

申请人： Yong-Suk Lee ,  Myung-Soo Huh ,  Cheol-Rae Jo ,  Sang-Hyuk Hong ,  Jeong-Ho Yi ,  Suk-Won Jung ,  Sun-Ho Kim ,  Mi-Ra An

发明人： Yong-Suk Lee ,  Myung-Soo Huh ,  Cheol-Rae Jo ,  Sang-Hyuk Hong ,  Jeong-Ho Yi ,  Suk-Won Jung ,  Sun-Ho Kim ,  Mi-Ra An

IPC分类号： C23C16/458 ,  C23C16/52 ,  C23C16/50 ,  C23C16/448

CPC分类号： C23C14/12 ,  C23C14/228 ,  C23C14/246 ,  C23C14/58 ,  C23C14/584

摘要： A thin film depositing apparatus and a thin film deposition method using the apparatus. The thin film depositing apparatus includes a chamber configured to have a substrate mounted therein, an ejection unit configured to move in the chamber and to eject a deposition vapor to the substrate, and a source supply unit configured to supply a source of the deposition vapor to the ejection unit.

摘要翻译： 一种薄膜沉积设备和使用该设备的薄膜沉积方法。 该薄膜沉积设备包括：一个被配置为具有安装在其中的基板的腔室;喷射单元，被配置为在腔室中移动并将沉积蒸气喷射到基底;以及源供应单元，其构造成将沉积蒸气源供应到 喷射单元。