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公开(公告)号：US20030013240A1
公开(公告)日：2003-01-16
申请号：US10189734
申请日：2002-07-08
IPC分类号： H01L021/78 , H01L021/46 , H01L021/301 , H01L021/337 , H01L021/338
CPC分类号： H01L29/045 , H01L21/3043
摘要： In a method of manufacturing a compound semiconductor device, individual chip patterns are projected onto a (1 0 0) surface of a GaAs wafer so that the columns and rows of the chip patterns are aligned in a direction slanting by 45 degrees with respect to a null0 1 1null direction of the GaAs wafer. The wafer is diced along this slanting direction and chipping along the edges of the individual separated chips is greatly reduced.
摘要翻译： 在制造化合物半导体器件的方法中，将单个芯片图案投影到GaAs晶片的（110）表面上，使得芯片图案的列和行相对于一个或多个的方向倾斜45度 GaAs晶片的[0 1 1]方向。 沿着该倾斜方向切割晶片，并且沿着各个分离的芯片的边缘的切屑大大减少。
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公开(公告)号：US20030017644A1
公开(公告)日：2003-01-23
申请号：US10189775
申请日：2002-07-08
IPC分类号： H01L021/301 , H01L021/44
CPC分类号： H01L21/3043 , H01L29/045
摘要： In a method of manufacturing a compound semiconductor device, individual chip patterns are projected onto a (1 0 0) surface of a GaAs wafer so that the columns and rows of the chip patterns are aligned in a direction slanting by 45 degrees with respect to a nullO 1 1null direction of the GaAs wafer. The wafer is diced along this slanting direction and chipping along the edges of the individual separated chips is greatly reduced.
摘要翻译： 在制造化合物半导体器件的方法中，将单个芯片图案投影到GaAs晶片的（110）表面上，使得芯片图案的列和行相对于一个或多个的方向倾斜45度 [O11] GaAs晶片方向。 沿着该倾斜方向切割晶片，并且沿着各个分离的芯片的边缘的切屑大大减少。
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公开(公告)号：US20030013276A1
公开(公告)日：2003-01-16
申请号：US10177762
申请日：2002-06-24
IPC分类号： H01L031/00
CPC分类号： H01L24/06 , H01L23/4824 , H01L24/45 , H01L29/41758 , H01L29/42312 , H01L2224/05552 , H01L2224/05553 , H01L2224/05599 , H01L2224/0603 , H01L2224/45015 , H01L2224/45117 , H01L2224/45144 , H01L2224/45155 , H01L2224/48091 , H01L2224/4911 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/0103 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10253 , H01L2924/10329 , H01L2924/12032 , H01L2924/1306 , H01L2924/14 , H01L2924/1423 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3025 , H01L2924/01032 , H01L2924/00
摘要： A local oscillation FET has a source connecting pad, a drain connecting pad and a gate connecting pad. The source connecting pad occupies one comer of a substrate, and the drain and gate connecting pads are placed at the neighboring comers so that the three connecting pads form an L shape on the substrate. As a modification to this configuration, another source connecting pad is placed at the remaining comer of the substrate so that the drain and gate connecting pads are shielded from each other by the two source connecting pads. These device configurations contribute to size reduction of the local oscillation FET.
摘要翻译： 本地振荡FET具有源极连接焊盘，漏极连接焊盘和栅极连接焊盘。 源极连接焊盘占据衬底的一个角，并且漏极和栅极连接焊盘被放置在相邻的拐角处，使得三个连接焊盘在衬底上形成L形。 作为该配置的修改，另一个源极连接焊盘放置在衬底的剩余角处，使得漏极和栅极连接焊盘通过两个源极连接焊盘彼此屏蔽。 这些器件配置有助于本地振荡FET的尺寸减小。
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公开(公告)号：US20030129788A1
公开(公告)日：2003-07-10
申请号：US10328022
申请日：2002-12-26
IPC分类号： H01L021/44 , H01L021/301
CPC分类号： H01L21/3043 , H01L29/045
摘要： In a method of manufacturing a compound semiconductor device, individual chip patterns are projected onto a (100) surface of a GaAs wafer so that the columns and rows of the chip patterns are aligned in a direction slanting by 45 degrees with respect to a nullO11null direction of the GaAs wafer. The wafer is diced along this slanting direction and chipping along the edges of the individual separated chips is greatly reduced.
摘要翻译： 在制造化合物半导体器件的方法中，将各个芯片图案投影到GaAs晶片的（100）表面上，使得芯片图案的列和行相对于[O11]倾斜45度的方向 ]方向。 沿着该倾斜方向切割晶片，并且沿着各个分离的芯片的边缘的切屑大大减少。
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