公开(公告)号：US06432208B1

公开(公告)日：2002-08-13

申请号：US09670580

申请日：2000-09-27

申请人： Satoru Kawakami ,  Katsuhiko Iwabuchi ,  Ryo Kuwajima ,  Ryusuke Ushikoshi ,  Naohito Yamada ,  Tetsuya Kawajiri

发明人： Satoru Kawakami ,  Katsuhiko Iwabuchi ,  Ryo Kuwajima ,  Ryusuke Ushikoshi ,  Naohito Yamada ,  Tetsuya Kawajiri

IPC分类号： C23C1600

CPC分类号： H01L21/67103 ,  C23C16/4586 ,  C23C16/46 ,  H01J2237/2001

摘要： In a plasma processing apparatus, a temperature control of a substrate to be processed is improved. A ceramic made support member having a substantially cylindrical shape is provided in a process chamber. An upper end of the support member is airtightly connected to a back surface of a placement table by solid state bonding. A lower end of the support member is airtightly connected to a bottom of the process chamber via a lower cooling jacket and O-rings. A cooling jacket made of a disc-like aluminum block is provided in an atmosphere chamber formed inside the support member. The cooling jacket is mounted to the back surface of the placement table via a heat conductive sheet member.

摘要翻译： 在等离子体处理装置中，提高了待处理基板的温度控制。 在处理室中设置具有大致圆柱形状的陶瓷制的支撑构件。 支撑构件的上端通过固态粘合气密地连接到放置台的后表面。 支撑构件的下端经由下部冷却套和O形环气密地连接到处理室的底部。 在形成在支撑构件内部的气氛室中设置由盘状铝块制成的冷却套。 冷却套通过导热板构件安装到放置台的后表面。

公开(公告)号：US6134096A

公开(公告)日：2000-10-17

申请号：US317772

申请日：1999-05-18

申请人： Naohito Yamada ,  Masashi Ohno ,  Ryusuke Ushikoshi

发明人： Naohito Yamada ,  Masashi Ohno ,  Ryusuke Ushikoshi

IPC分类号： B23Q3/15 ,  G03F7/20 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H02N13/00 ,  H01G23/00

CPC分类号： G03F7/707 ,  G03F7/70708 ,  H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck for attracting an object for treatment. The electrostatic chuck includes a substrate, an insulating dielectric layer and at least one electrode located between the substrate and the insulating dielectric layer. The object is attracted onto the electrode via the insulating dielectric layer. The insulating dielectric layer is between 0.5 mm and 5.0 mm thick, and utilizes a gas-introducing hole to form a gas-diffusing depression on the side of an attractive surface, allowing for more uniform heat conduction. The gas-diffusing depression is between 100 um and 5.0 mm deep. The distance between the bottom surface of the gas-diffusing depression and an electrode may range from 500 .mu.m to 5 mm.

摘要翻译： 用于吸引物体进行治疗的静电卡盘。 静电卡盘包括基板，绝缘电介质层和位于基板和绝缘介电层之间的至少一个电极。 物体经由绝缘介电层吸引到电极上。 绝缘介电层的厚度在0.5mm至5.0mm之间，利用气体导入孔在吸引面侧形成气体扩散凹部，能够进行更均匀的导热。 气体扩散凹陷深度在100μm到5.0mm之间。 气体扩散凹陷的底表面和电极之间的距离可以在500μm至5mm的范围内。

公开(公告)号：US5946183A

公开(公告)日：1999-08-31

申请号：US705988

申请日：1996-08-30

申请人： Naohito Yamada ,  Masashi Ohno ,  Ryusuke Ushikoshi

发明人： Naohito Yamada ,  Masashi Ohno ,  Ryusuke Ushikoshi

IPC分类号： B23Q3/15 ,  G03F7/20 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H02N13/00

CPC分类号： G03F7/707 ,  G03F7/70708 ,  H01L21/6833 ,  Y10T279/23

摘要： An electrostatic chuck for attracting an object to be treated, includes a substrate, an insulating dielectric layer and at least one electrode provided between the substrate and the insulating dielectric layer, wherein the above object is to be attracted onto the electrode via the insulating dielectric layer and an average thickness of the insulating dielectric layer is not less than 0.5 mm and not more than 5.0 mm.

摘要翻译： 用于吸引待处理物体的静电卡盘包括基板，绝缘介电层和设置在基板和绝缘介电层之间的至少一个电极，其中上述目的经由绝缘介电层被吸引到电极上 并且绝缘介电层的平均厚度不小于0.5mm且不大于5.0mm。

公开(公告)号：US06975497B2

公开(公告)日：2005-12-13

申请号：US09769519

申请日：2001-01-26

申请人： Mie Nagao ,  Ryusuke Ushikoshi ,  Masashi Ohno

发明人： Mie Nagao ,  Ryusuke Ushikoshi ,  Masashi Ohno

IPC分类号： B23Q3/15 ,  G03F7/20 ,  H01L21/027 ,  H01L21/68 ,  H01L21/683 ,  H02N13/00

CPC分类号： G03F7/70691 ,  H01L21/6833 ,  H02N13/00 ,  Y10T279/23

摘要： A method for reducing particles from an electrostatic chuck, having the steps of: setting a wafer onto an attracting face of an electrostatic chuck, attracting the wafer onto the attracting face by applying a voltage to the electrostatic chuck, releasing stress due to a difference in heat expansion between the wafer and the electrostatic chuck by sliding the wafer relative to the attracting face before the wafer's temperature arrives at a saturated temperature, and increasing the wafer's temperature to a saturated temperature from its lower temperature than that of the attracting face.

摘要翻译： 一种用于从静电卡盘减少颗粒的方法，具有以下步骤：将晶片设置在静电卡盘的吸附面上，通过向静电卡盘施加电压而将晶片吸引到吸引面上，释放由于差异引起的应力 在晶片温度达到饱和温度之前，通过相对于吸引面滑动晶片，使晶片和静电卡盘之间的热膨胀，并将晶片的温度从比吸引面的温度降低到饱和温度。

公开(公告)号：US06617514B1

公开(公告)日：2003-09-09

申请号：US09095157

申请日：1998-06-10

申请人： Ryusuke Ushikoshi ,  Hideyoshi Tsuruta ,  Tomoyuki Fujii

发明人： Ryusuke Ushikoshi ,  Hideyoshi Tsuruta ,  Tomoyuki Fujii

IPC分类号： H01R400

CPC分类号： H01L21/6833

摘要： The disclosed ceramics joint structure, in which a ceramics member having an oxidation resistance property and a metal member are joined via a joint layer, has a structure such that a part of the embedded member is exposed to a joint surface of the ceramics member, which is contacted with the joint layer to form a metal exposing portion, and the ceramics member and the metal exposing portion are joined via the joint layer to the metal member respectively. Moreover, the joint layer is mainly made of one or more metal selected from the group consisting of gold, platinum and palladium.

摘要翻译： 所公开的具有耐氧化性的陶瓷构件和金属构件的陶瓷接头结构通过接合层接合，具有使嵌入构件的一部分暴露于陶瓷构件的接合面的结构， 与接合层接触以形成金属暴露部分，并且陶瓷构件和金属暴露部分分别经由接合层接合到金属构件。 此外，接合层主要由选自金，铂和钯的一种或多种金属制成。

公开(公告)号：US6057513A

公开(公告)日：2000-05-02

申请号：US13199

申请日：1998-01-26

申请人： Ryusuke Ushikoshi ,  Hideyoshi Tsuruta ,  Tomoyuki Fujii

发明人： Ryusuke Ushikoshi ,  Hideyoshi Tsuruta ,  Tomoyuki Fujii

IPC分类号： C04B37/02 ,  H01L21/683 ,  H05K1/16

CPC分类号： H01L21/6833 ,  Y10T279/23 ,  Y10T29/49149

摘要： A joint structure having a metal member and a ceramic member having a housing hole for accommodating at least a part of the metal member therein, in which an electrically conductive joint layer is formed between a bottom face of the metal member and a bottom face of the housing hole, and a film having a given wettability by the electrically conductive joint layer is formed on at least a part of the side wall face of the metal member.

摘要翻译： 一种具有金属构件和陶瓷构件的接合结构，其具有用于容纳至少一部分金属构件的容纳孔，其中在金属构件的底面和底面之间形成导电接合层 在金属构件的侧壁面的至少一部分上形成有由导电性接合层赋予润湿性的膜的容纳孔和膜。

公开(公告)号：US5683606A

公开(公告)日：1997-11-04

申请号：US359742

申请日：1994-12-20

申请人： Ryusuke Ushikoshi ,  Atsushi Sakon ,  Koichi Umemoto ,  Yusuke Niiori

发明人： Ryusuke Ushikoshi ,  Atsushi Sakon ,  Koichi Umemoto ,  Yusuke Niiori

IPC分类号： H05B3/20 ,  C23C16/46 ,  H05B3/14 ,  H05B3/18 ,  H05B3/44 ,  F27D11/00

CPC分类号： C23C16/46 ,  H05B3/141

摘要： A ceramic heater includes a substrate made of aluminum nitride, a resistive heating element buried in the substrate and made of a metal having a high melting point, and terminals electrically connected to the resistive heating element and buried in said substrate. The terminals are made of a metal having a high melting point and a coefficient of thermal expansion not smaller than that of the substrate. The metal of the resistive heating element has a coefficient of thermal expansion not smaller than that of the substrate. The coefficient of thermal expansion of each of the terminals and the resistive heating element is in a range from 5.0.times.10.sup.-6 /.degree.C. to 8.3.times.10.sup.-6 /.degree.C.

摘要翻译： 陶瓷加热器包括由氮化铝制成的基板，埋在基板中的由具有高熔点的金属制成的电阻加热元件，以及电连接到电阻加热元件并埋入所述基板中的端子。 端子由具有高熔点和不小于基板的热膨胀系数的金属制成。 电阻加热元件的金属的热膨胀系数不小于基板的热膨胀系数。 端子和电阻加热元件的热​​膨胀系数在5.0×10 -6 /℃至8.3×10 -6 /℃的范围内。

公开(公告)号：US5616024A

公开(公告)日：1997-04-01

申请号：US380190

申请日：1995-01-27

申请人： Kazuhiro Nobori ,  Ryusuke Ushikoshi ,  Koichi Umemoto ,  Atsushi Sakon ,  Yusuke Niiori ,  Masahiro Murasato

发明人： Kazuhiro Nobori ,  Ryusuke Ushikoshi ,  Koichi Umemoto ,  Atsushi Sakon ,  Yusuke Niiori ,  Masahiro Murasato

IPC分类号： H05B3/20 ,  B21F99/00 ,  C23C16/46 ,  C30B25/10 ,  C30B31/12 ,  F27D1/16 ,  F27D99/00 ,  H05B3/14 ,  F27D3/12

CPC分类号： F27D99/0006 ,  C23C16/46 ,  C30B25/10 ,  C30B31/12 ,  F27D1/16 ,  H05B3/143 ,  F27D2099/0008

摘要： A ceramic heater composed of a ceramic substrate and a resistant heating element embedded within the ceramic substrate along a predetermined planar pattern is obtained by holding a convolution of a spiral-coiled high melting metallic filament in the above predetermined planar pattern and heat-treating the convolution at a temperature not higher than a primary recrystallization commencement temperature of the high melting metal under a non-oxidative atmosphere to provide the resistant heating element, embedding the resulting resistant heating element within a ceramic shaped body, and then, sintering the ceramic shaped body. In a preferred embodiment, the resistant heating element is a convolution of a spiral coil, the number of coils per a unit length of said convolution is set at a predetermined value in each of defined domains of the ceramic heater, and when the number of coils per a unit length of the convolution is determined, the relation of the maximal value, the minimal value and the mean value, of all the determined numbers of coils in the above domains, satisfies the formula:(maximal value-minimal value)/mean value.ltoreq.0.1.Another preferred embodiment comprising a disc-shaped ceramic substrate and a resistant heating element embedded within the substrate is adapted for application in semiconductor wafer heating, wherein a resistant heating element having a planar shape composed of a plurality of concentric loops differing in diameters from each other and connecting portions which connect inner loops in sequence with outer loops to form a series of resistant heating element. In a process for manufacturing ceramic articles composed of a ceramic substrate, an electroconducting body embedded within the ceramic substrate and a conduit or pit bored avoiding the above electroconducting body in the ceramic substrate, an X-ray transmission photograph of the ceramic substrate is taken and then the conduit or pit is formed based on the X-ray transmission photograph.

公开(公告)号：US5280156A

公开(公告)日：1994-01-18

申请号：US811946

申请日：1991-12-23

申请人： Yusuke Niori ,  Kazuhiro Nobori ,  Ryusuke Ushikoshi ,  Koichi Umemoto

发明人： Yusuke Niori ,  Kazuhiro Nobori ,  Ryusuke Ushikoshi ,  Koichi Umemoto

IPC分类号： H01L21/00 ,  H05B3/20

CPC分类号： H01L21/67103 ,  H01L2924/0002 ,  Y10T279/23

摘要： A wafer heating apparatus can be obtained which prevents formation of a local gap caused by deflection or distortion, and the like, of a wafer at the time of heating the wafer so as to improve production yield of the heat treatment of the wafers. The apparatus includes a ceramic substrate, a heat generating resistive element embedded in the ceramic substrate, a film electrode formed on a front surface of the ceramic substrate, and a ceramic dielectric layer formed on the front surface of the ceramic substrate to coat the film electrode. A direct current power source is provided to generate Coulomb's force between the wafer and the film electrode via the dielectric layer to attract the wafer to a wafer-attracting surface of the dielectric layer, while heating the wafer attracted to the wafer-attracting surface by energizing the heat generating element through application of an electric current therethrough. A method of producing the wafer heating apparatus is also disclosed.

摘要翻译： 可以获得晶片加热装置，其防止在加热晶片时由晶片的偏转或变形等引起的局部间隙的形成，从而提高晶片的热处理的生产率。 该装置包括陶瓷基板，嵌入陶瓷基板中的发热电阻元件，形成在陶瓷基板的前表面上的膜电极和形成在陶瓷基板的前表面上的陶瓷电介质层，以涂覆膜电极 。 提供直流电源以通过电介质层在晶片和膜电极之间产生库仑力，以将晶片吸引到电介质层的晶片吸引表面，同时通过激励加热晶片吸引表面的晶片 所述发热元件通过其中的电流施加。 还公开了一种制造晶片加热装置的方法。

公开(公告)号：US06225606B1

公开(公告)日：2001-05-01

申请号：US09222223

申请日：1998-12-29

申请人： Hideyoshi Tsuruta ,  Ryusuke Ushikoshi ,  Kazuaki Yamaguchi

发明人： Hideyoshi Tsuruta ,  Ryusuke Ushikoshi ,  Kazuaki Yamaguchi

IPC分类号： H05B368

CPC分类号： H05B3/74 ,  H05B3/283 ,  H05B2203/014

摘要： A ceramic heater includes a ceramic substrate having a heating surface, and a resistance heating element buried inside the ceramic substrate, wherein at least a part of the resistance heating element is constituted by a conductive network member, and a ceramic material constituting the ceramic substrate is filled in meshes of the network member.

摘要翻译： 陶瓷加热器包括具有加热面的陶瓷基板和埋在陶瓷基板内的电阻加热元件，其中电阻加热元件的至少一部分由导电网络构件构成，构成陶瓷基板的陶瓷材料为 填充网络成员的网格。