公开(公告)号：US06432208B1

公开(公告)日：2002-08-13

申请号：US09670580

申请日：2000-09-27

申请人： Satoru Kawakami ,  Katsuhiko Iwabuchi ,  Ryo Kuwajima ,  Ryusuke Ushikoshi ,  Naohito Yamada ,  Tetsuya Kawajiri

发明人： Satoru Kawakami ,  Katsuhiko Iwabuchi ,  Ryo Kuwajima ,  Ryusuke Ushikoshi ,  Naohito Yamada ,  Tetsuya Kawajiri

IPC分类号： C23C1600

CPC分类号： H01L21/67103 ,  C23C16/4586 ,  C23C16/46 ,  H01J2237/2001

摘要： In a plasma processing apparatus, a temperature control of a substrate to be processed is improved. A ceramic made support member having a substantially cylindrical shape is provided in a process chamber. An upper end of the support member is airtightly connected to a back surface of a placement table by solid state bonding. A lower end of the support member is airtightly connected to a bottom of the process chamber via a lower cooling jacket and O-rings. A cooling jacket made of a disc-like aluminum block is provided in an atmosphere chamber formed inside the support member. The cooling jacket is mounted to the back surface of the placement table via a heat conductive sheet member.

摘要翻译： 在等离子体处理装置中，提高了待处理基板的温度控制。 在处理室中设置具有大致圆柱形状的陶瓷制的支撑构件。 支撑构件的上端通过固态粘合气密地连接到放置台的后表面。 支撑构件的下端经由下部冷却套和O形环气密地连接到处理室的底部。 在形成在支撑构件内部的气氛室中设置由盘状铝块制成的冷却套。 冷却套通过导热板构件安装到放置台的后表面。

公开(公告)号：US09337945B2

公开(公告)日：2016-05-10

申请号：US14007248

申请日：2012-03-23

申请人： Tadashi Imai ,  Takayuki Kaida ,  Satoru Kawakami ,  Hitoshi Masumura

发明人： Tadashi Imai ,  Takayuki Kaida ,  Satoru Kawakami ,  Hitoshi Masumura

IPC分类号： H04B1/16 ,  H04H20/44 ,  H04H40/18 ,  H04N5/455 ,  H04N5/46 ,  H04N21/462 ,  H04N21/426 ,  H04N21/438 ,  H04N21/61 ,  H04H20/26 ,  H04H40/90

CPC分类号： H04H40/18 ,  H04H20/26 ,  H04H40/90 ,  H04N5/455 ,  H04N5/46 ,  H04N21/4263 ,  H04N21/4382 ,  H04N21/4622 ,  H04N21/6112 ,  H04N21/6143

摘要： A first high frequency processing unit detects a first broadcasting wave transmitted using a first frequency band, and extracts a first high frequency signal. Further, a second high frequency processing unit detects a second broadcasting wave transmitted using a second frequency band different from the first frequency band, and extracts a second high frequency signal. Furthermore, at least one local oscillator generates a local oscillation signal used in the first high frequency processing unit and the second high frequency processing unit.

摘要翻译： 第一高频处理单元检测使用第一频带发送的第一广播波，并提取第一高频信号。 此外，第二高频处理单元检测使用与第一频带不同的第二频带发送的第二广播波，并提取第二高频信号。 此外，至少一个本地振荡器产生在第一高频处理单元和第二高频处理单元中使用的本地振荡信号。

公开(公告)号：US20110076119A1

公开(公告)日：2011-03-31

申请号：US12993914

申请日：2009-05-19

申请人： Yasuhiro Tobe ,  Satoru Kawakami ,  Shinji Matsubayashi ,  Yosuke Muraguchi ,  Yasuyoshi Kitazawa ,  Yasumichi Mieno

发明人： Yasuhiro Tobe ,  Satoru Kawakami ,  Shinji Matsubayashi ,  Yosuke Muraguchi ,  Yasuyoshi Kitazawa ,  Yasumichi Mieno

IPC分类号： H01L21/677

CPC分类号： H01L21/68764 ,  B65G49/061 ,  B65G2249/02 ,  B65G2249/045 ,  H01L21/67709

摘要： An object is to provide a vacuum processing apparatus that is capable of suppressing the costs and making control easy. Provided is a vacuum processing apparatus that includes a vacuum section (2) of which inside is held in vacuum, a placing section (3) that is disposed inside the vacuum section (2) and is capable of placing a workpiece thereon, a linear motor 4) that includes coils (415) and makes the placing section (3) travel within the vacuum section, wherein air is placed inside the placing section (3) while being isolated from the vacuum section (2), and the coils (415) of the linear motor (4) are disposed inside the placing section (3).

摘要翻译： 本发明的目的是提供一种能够抑制成本并使控制变得容易的真空处理装置。 本发明提供一种真空处理装置，其特征在于，具备将真空部保持在真空中的真空部（2），配置在所述真空部（2）内部并能够在其上放置工件的放置部（3） 4），其包括线圈（415）并使放置部分（3）在真空部分内行进，其中空气在与真空部分（2）隔离的同时放置在放置部分（3）内，并且线圈（415） 线性电动机（4）配置在放置部（3）的内部。

公开(公告)号：US07634225B2

公开(公告)日：2009-12-15

申请号：US10510289

申请日：2003-04-02

申请人： Satoru Kawakami ,  Tadashi Imai

发明人： Satoru Kawakami ,  Tadashi Imai

IPC分类号： H04H1/00

CPC分类号： H05K9/006 ,  H04B1/005 ,  H04B1/08 ,  H04B1/18 ,  H04N5/50 ,  H04N5/64 ,  H04N21/4263 ,  H04N21/6143 ,  H05K1/0218 ,  H05K1/0237 ,  H05K1/144 ,  H05K2201/043 ,  H05K2201/0715 ,  H05K2201/0723

摘要： The present invention provides a receiver that includes a plurality of tuners for receiving broadcasts such as satellite broadcast. A tuner circuit (1) includes an input terminal (11) for inputting a broadcast wave in which a video signal and/or an audio signal are modulated in a predetermined format, and a mount layer (13) on which a main circuit (12) for selecting, from the broadcast wave, a video signal and/or an audio signal included in a predetermined frequency band is mounted. In the tuner circuit (1), a first ground layer (15) is disposed, through a first dielectric layer (14), on the surface opposite to that on which the main circuit (12) of the mount layer (13) is arranged, and a second ground layer (17) is disposed through a second dielectric layer, thereby suppressing mutual interference between tuners.

摘要翻译： 本发明提供一种接收机，其包括用于接收诸如卫星广播的广播的多个调谐器。 调谐器电路（1）包括用于输入以预定格式调制视频信号和/或音频信号的广播波的输入端（11）和安装层（13），主电路（12） ）用于从广播波选择包括在预定频带中的视频信号和/或音频信号。 在调谐器电路（1）中，第一接地层（15）通过第一电介质层（14）设置在与安装层（13）的主电路（12）相对的表面相对的表面上 并且通过第二介电层设置第二接地层（17），从而抑制调谐器之间的相互干扰。

公开(公告)号：US20050122428A1

公开(公告)日：2005-06-09

申请号：US10510289

申请日：2003-04-02

申请人： Satoru Kawakami ,  Tadashi Imai

发明人： Satoru Kawakami ,  Tadashi Imai

IPC分类号： H04B1/08 ,  H04B1/18 ,  H04N5/50 ,  H04N5/64 ,  H05K1/02 ,  H05K1/14 ,  H04N7/173 ,  H04N5/14 ,  H04N5/44 ,  H04N9/64

CPC分类号： H05K9/006 ,  H04B1/005 ,  H04B1/08 ,  H04B1/18 ,  H04N5/50 ,  H04N5/64 ,  H04N21/4263 ,  H04N21/6143 ,  H05K1/0218 ,  H05K1/0237 ,  H05K1/144 ,  H05K2201/043 ,  H05K2201/0715 ,  H05K2201/0723

摘要： The present invention provides a receiver that includes a plurality of tuners for receiving broadcasts such as satellite broadcast. A tuner circuit (1) includes an input terminal (11) for inputting a broadcast wave in which a video signal and/or an audio signal are modulated in a predetermined format, and a mount layer (13) on which a main circuit (12) for selecting, from the broadcast wave, a video signal and/or an audio signal included in a predetermined frequency band is mounted. In the tuner circuit (1), a first ground layer (15) is disposed, through a first dielectric layer (14), on the surface opposite to that on which the main circuit (12) of the mount layer (13) is arranged, and a second ground layer (17) is disposed through a second dielectric layer, thereby suppressing mutual interference between tuners.

摘要翻译： 本发明提供一种接收机，其包括用于接收诸如卫星广播的广播的多个调谐器。 调谐器电路（1）包括用于输入以预定格式调制视频信号和/或音频信号的广播波的输入端（11）和安装层（13），主电路（12） ）用于从广播波选择包括在预定频带中的视频信号和/或音频信号。 在调谐器电路（1）中，第一接地层（15）通过第一电介质层（14）设置在与安装层（13）的主电路（12）相对的表面相对的表面上 并且通过第二介电层设置第二接地层（17），从而抑制调谐器之间的相互干扰。

公开(公告)号：US5494522A

公开(公告)日：1996-02-27

申请号：US214282

申请日：1994-03-17

申请人： Shuji Moriya ,  Masahiro Ogasawara ,  Jun Yashiro ,  Yoshifumi Tahara ,  Satoru Kawakami ,  Susumu Tanaka

发明人： Shuji Moriya ,  Masahiro Ogasawara ,  Jun Yashiro ,  Yoshifumi Tahara ,  Satoru Kawakami ,  Susumu Tanaka

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/505 ,  H01J37/32 ,  C23C16/00

CPC分类号： C23C16/45568 ,  C23C16/4401 ,  C23C16/4586 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32706 ,  H01J2237/022 ,  H01J2237/184

摘要： A plasma process system for producing gas plasma in an air-tight chamber by high frequency power to process a substrate with the gas plasma comprising a lower electrode on which the substrate to be plasma-processed is mounted, an upper electrode arranged above the lower electrode, a plasma generator circuit for generating plasma between the upper and the lower electrode, a power source for supplying high frequency power to the plasma generator circuit, and bias generator for generating negative voltage in the upper or lower electrode when high frequency power is supplied from the power source to the upper or lower electrode, wherein the plasma generator circuit includes transformer for supplying a part of high frequency power, which is supplied from the power source, to the bias generator.

摘要翻译： 一种用于通过高频功率在气密室中产生气体等离子体的等离子体处理系统，其中包括安装有待等离子体处理的衬底的下电极的气体等离子体处理衬底;布置在下电极上方的上电极 用于在上下电极之间产生等离子体的等离子体发生器电路，用于向等离子体发生器电路提供高频电力的电源，以及当从高电源供应高频电力时在上电极或下电极产生负电压的偏置发生器 电源到上电极或下电极，其中等离子体发生器电路包括用于将从电源提供的一部分高频电力提供给偏置发生器的变压器。

公开(公告)号：US06501082B1

公开(公告)日：2002-12-31

申请号：US09527562

申请日：2000-03-16

申请人： Toshio Goto ,  Masaru Hori ,  Masafumi Ito ,  Nobuo Ishii ,  Satoru Kawakami

发明人： Toshio Goto ,  Masaru Hori ,  Masafumi Ito ,  Nobuo Ishii ,  Satoru Kawakami

IPC分类号： G21K510

CPC分类号： H01J37/32192 ,  H01J37/3233 ,  H01J37/32623

摘要： A controlled plasma deposition system and method are provided including a vacuum vessel. An electron adding mass spectrometer is connected to a vacuum vessel for carrying out a gas treatment for a semi-conductor wafer. In the mass spectrometer, a gas in the vacuum vessel is incorporated, and electrons are added to the particles in the gas. Then the value of negative ions obtained by ionizing the particles, for example specific radicals, is measured. Once measured, the information is forwarded to a controller that may optimize the plasma deposition method.

摘要翻译： 提供了包括真空容器的受控等离子体沉积系统和方法。 将电子加入质谱仪连接到用于对半导体晶片进行气体处理的真空容器。 在质谱仪中，并入真空容器中的气体，并将电子加到气体中的颗粒中。 然后测量通过电离粒子，例如特定基团获得的负离子的值。 一旦测量，信息被转发到可优化等离子体沉积方法的控制器。

公开(公告)号：US6066568A

公开(公告)日：2000-05-23

申请号：US75950

申请日：1998-05-12

申请人： Yoshinobu Kawai ,  Yoko Ueda ,  Nobuo Ishii ,  Satoru Kawakami ,  Hideaki Amano

发明人： Yoshinobu Kawai ,  Yoko Ueda ,  Nobuo Ishii ,  Satoru Kawakami ,  Hideaki Amano

IPC分类号： H01L21/3065

CPC分类号： H01L21/3065

摘要： An electron density at an ECR point, which is spaced from a substrate to be treated and which faces the substrate, is set to be higher than or equal to 0.46 nc (nc: an upper limit side cut-off density of an X wave) and lower than nc. Thus, a high chevron distribution of electron density is formed in end portions of a magnetic field forming region, and a distribution of electron density having a lower peak value than those in the end portions is formed in a central portion of the magnetic field forming region. In this case, the periphery of a magnetic field crosses the inner wall of a vacuum chamber once between the ECR point and the substrate, and a space of one fourth or more of the wavelength of the X wave is formed between the periphery of the magnetic field and the inner wall of the vacuum chamber as the magnetic field runs downstream. Thus, it is possible to achieve an inplane uniform treatment when carrying out a treatment, such as a thin film deposition or etching, with ECR plasmas for a wafer.

摘要翻译： 与待处理的基板间隔开且面向基板的ECR点处的电子密度被设定为高于或等于0.46nc（nc：X波的上限侧截止密度） 并低于nc。 因此，在磁场形成区域的端部形成电子密度的高V形分布，并且在磁场形成区域的中心部分形成具有比端部部分低的峰值的电子密度分布 。 在这种情况下，在ECR点和基板之间磁场的周边与真空室的内壁交叉，X波的波长的四分之一以上的空间形成在磁性的周边之间 场和真空室的内壁随着磁场向下游流动。 因此，当进行用于晶片的ECR等离子体进行诸如薄膜沉积或蚀刻的处理时，可以实现内平面的均匀处理。

公开(公告)号：US06558508B1

公开(公告)日：2003-05-06

申请号：US09655780

申请日：2000-09-06

申请人： Satoru Kawakami

发明人： Satoru Kawakami

IPC分类号： C23C1600

CPC分类号： H01L21/67109 ,  H01L21/67103 ,  Y10T279/23

摘要： In a vacuum processing apparatus for a semiconductor wafer, two intermediate dielectric plates 4A and 4B are provided on an upper surface of a cooling portion 31 provided with a coolant passageway 32, with an o-ring 35 therebetween, and a dielectric plate 5 is provided on the top thereof. Electrodes 41 and 51 are embedded in surface portions of each of these dielectric plates 4A, 4B, and 5, and heaters 42 and 52 are embedded in interior portions thereof. The intermediate dielectric plates 4A and 4B are linked together by electrostatic force, as are the intermediate dielectric plate 4B and the dielectric plate 5. Thus any gaps in a vacuum environment that are formed between adjacent components in these linkage regions are either eliminated or reduced.

摘要翻译： 在用于半导体晶片的真空处理装置中，在设置有冷却剂通道32的冷却部31的上表面上设置有两个中间电介质板4A和4B，其间具有O形环35，并且提供介电板5 在其顶部。 电极41和51嵌入在这些电介质板4A，4B和5中的每一个的表面部分中，并且加热器42和52嵌入其内部。 中间电介质板4A和4B与中间电介质板4B和电介质板5一样通过静电力连接在一起。因此，在这些连接区域中在相邻部件之间形成的真空环境中的任何间隙被消除或减少。

公开(公告)号：US06399520B1

公开(公告)日：2002-06-04

申请号：US09521601

申请日：2000-03-09

申请人： Satoru Kawakami ,  Shigemi Murakawa ,  Mitsuhiro Yuasa ,  Toshiaki Hongoh

发明人： Satoru Kawakami ,  Shigemi Murakawa ,  Mitsuhiro Yuasa ,  Toshiaki Hongoh

IPC分类号： H01L2131

CPC分类号： H01J37/32192 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02274 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/3185

摘要： In an atmosphere of processing gas, on a wafer W consisting mainly of silicon, through a planar-array antenna RLSA 60 having a plurality of slits, microwaves are irradiated to generate plasma containing oxygen, or nitrogen, or oxygen and nitrogen and to implement therewith on the surface of the wafer W direct oxidizing, nitriding, or oxy-nitriding to deposit an insulator film 2 of a thickness of 1 nm or less in terms of oxide film. A manufacturing method and apparatus of semiconductors that can successfully regulate film quality of the interface between a silicon substrate and a SiN film and can form SiN film of high quality in a short time can be obtained.

摘要翻译： 在处理气体的气氛中，在主要由硅构成的晶片W上，通过具有多个狭缝的平面阵列天线RLSA 60，照射微波以产生含有氧或氮或氧和氮的等离子体并与其一起实施 在晶片W的表面上直接进行氧化，氮化或氧氮化，从而以氧化物膜形成厚度为1nm以下的绝缘膜2。 可以获得能够成功地调节硅衬底和SiN膜之间的界面的膜​​质量并且可以在短时间内形成高质量的SiN膜的半导体的制造方法和装置。