公开(公告)号：US5865897A

公开(公告)日：1999-02-02

申请号：US596384

申请日：1996-02-09

申请人： Satoshi Ito ,  Satoshi Taniguchi ,  Masao Ikeda ,  Hiroyuki Okuyama ,  Hironori Tsukamoto ,  Masaharu Nagai ,  Koshi Tamamura

发明人： Satoshi Ito ,  Satoshi Taniguchi ,  Masao Ikeda ,  Hiroyuki Okuyama ,  Hironori Tsukamoto ,  Masaharu Nagai ,  Koshi Tamamura

IPC分类号： C23C14/00 ,  C23C14/06 ,  C30B23/02 ,  H01L21/363 ,  H01L21/365 ,  H01L33/00 ,  H01L33/28 ,  H05H13/00

CPC分类号： H01L33/285 ,  C23C14/0026 ,  C23C14/0629 ,  C30B23/02 ,  C30B29/48 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02474 ,  H01L21/02477 ,  H01L21/02551 ,  H01L21/0256 ,  H01L21/02579 ,  H01L21/02631 ,  H01L33/0087

摘要： A film of a II-VI group compound semiconductor of at least one of elements belonging to the II group of the periodic table and at least one of elements belonging to the VI group of the periodic table is deposited on a substrate. When the film is deposited on the substrate, a plasma of nitrogen in an excited state is applied to the substrate while removing charged particles from said plasma by a charged particle removing means. The deposited film of a nitrogen-doped II-VI group compound semiconductor has an increased percentage of activated nitrogen atoms and improved crystallinity.

摘要翻译： PCT No.PCT / JP95 / 00854 Sec。 371日期1996年2月9日 102（e）日期1996年2月9日PCT提交1995年4月28日PCT公布。 公开号WO95 / 34093 日期1995年12月14日属于周期表II族的至少一种元素的II-VI族化合物半导体的膜和属于周期表的VI族的元素中的至少一种沉积在基板上 。 当膜沉积在衬底上时，将激发态的氮等离子体施加到衬底上，同时通过带电粒子去除装置从所述等离子体中除去带电粒子。 氮掺杂的II-VI族化合物半导体的沉积膜具有增加的活性氮原子百分比和改善的结晶度。

公开(公告)号：US5695556A

公开(公告)日：1997-12-09

申请号：US555834

申请日：1995-11-13

申请人： Koshi Tamamura ,  Hironori Tsukamoto ,  Masaharu Nagai ,  Masao Ikeda

发明人： Koshi Tamamura ,  Hironori Tsukamoto ,  Masaharu Nagai ,  Masao Ikeda

IPC分类号： C30B25/16 ,  H01L21/66 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00

CPC分类号： C30B25/16 ,  H01L22/12 ,  H01L2924/0002

摘要： By applying the method, the critical film thickness of a compound semiconductor layer is determined, and a semiconductor device having a compound semiconductor layer with an optimized film thickness excellent in emitting performance is manufactured. The relationship between film thickness of a compound semiconductor layer and photoluminescence (PL) corresponding to the film thickness is obtained by measurement, the film thickness where PL exhibits a peak is designated as critical film thickness. The semiconductor layer comprises II-VI group compound semiconductor layer containing at least cadmium. The relationship between the critical film thickness and cadmium composition ratio is obtained by measurement. An equation which approximates the relationship between the critical film thickness and cadmium composition ratio is formulated. When a semiconductor device is manufactured, a compound semiconductor layer is formed so as that the thickness of the layer is thinner than the critical film thickness determined from the equation.

摘要翻译： 通过应用该方法，确定化合物半导体层的临界膜厚度，制造具有发光性能优异的膜厚化合物半导体层的半导体装置。 化合物半导体层的膜厚与膜厚对应的光致发光（PL）之间的关系是通过测量获得的，其中PL表现出峰值的膜厚度被指定为临界膜厚度。 半导体层包含至少含有镉的II-VI族化合物半导体层。 通过测量获得临界膜厚度和镉组成比之间的关系。 制定近似临界膜厚度和镉组成比之间关系的方程式。 当制造半导体器件时，形成化合物半导体层，使得层的厚度比由等式确定的临界膜厚度薄。

公开(公告)号：US6024794A

公开(公告)日：2000-02-15

申请号：US932869

申请日：1997-09-18

申请人： Koshi Tamamura ,  Hironori Tsukamoto ,  Masaharu Nagai

发明人： Koshi Tamamura ,  Hironori Tsukamoto ,  Masaharu Nagai

IPC分类号： C30B25/16 ,  H01L21/66 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00

CPC分类号： C30B25/16 ,  H01L22/12 ,  H01L2924/0002

摘要： By applying the method, the critical film thickness of a compound semiconductor layer is determined, and a semiconductor device having a compound semiconductor layer with an optimized film thickness excellent in emitting performance is manufactured.The relationship between film thickness of a compound semiconductor layer and photoluminescence (PL) corresponding to the film thickness is obtained by measurement, the film thickness where PL exhibits a peak is designated as critical film thickness. The semiconductor layer comprises II-VI group compound semiconductor layer containing at least cadmium. The relationship between the critical film thickness and cadmium composition ratio is obtained by measurement. An equation which approximates the relationship between the critical film thickness and cadmium composition ratio is formulated. When a semiconductor device is manufactured, a compound semiconductor layer is formed so as that the thickness of the layer is thinner than the critical film thickness determined from the equation.

摘要翻译： 通过应用该方法，确定化合物半导体层的临界膜厚度，制造具有发光性能优异的膜厚化合物半导体层的半导体装置。 化合物半导体层的膜厚与膜厚对应的光致发光（PL）之间的关系是通过测量获得的，其中PL表现出峰值的膜厚度被指定为临界膜厚度。 半导体层包含至少含有镉的II-VI族化合物半导体层。 通过测量获得临界膜厚度和镉组成比之间的关系。 制定近似临界膜厚度和镉组成比之间关系的方程式。 当制造半导体器件时，形成化合物半导体层，使得层的厚度比由等式确定的临界膜厚度薄。

公开(公告)号：US5989339A

公开(公告)日：1999-11-23

申请号：US527456

申请日：1995-09-13

申请人： Koshi Tamamura ,  Hironori Tsukamoto ,  Masao Ikeda

发明人： Koshi Tamamura ,  Hironori Tsukamoto ,  Masao Ikeda

IPC分类号： C30B23/02 ,  H01L21/203 ,  H01L21/363 ,  H01L33/28 ,  H01S5/00 ,  C30B29/48

CPC分类号： H01L33/0083 ,  C30B23/02 ,  C30B29/48 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02474 ,  H01L21/02477 ,  H01L21/02562

摘要： A molecular beam epitaxy system having a plurality of chambers which contain at least a first chamber and a second chamber. The first chamber is used to form II-VI column compound semiconductor layers not containing Te. The second chamber is used to form II-VI column compound semiconductor layers containing at least Te. A semiconductor device having an ohmic characteristics can be fabricated without mixing Te into other layers.

摘要翻译： 一种具有至少包含第一室和第二室的多个室的分子束外延系统。 第一室用于形成不含Te的II-VI列化合物半导体层。 第二室用于形成至少含有Te的II-VI列化合物半导体层。 可以制造具有欧姆特性的半导体器件，而不将Te混合到其它层中。

公开(公告)号：US5780322A

公开(公告)日：1998-07-14

申请号：US722615

申请日：1996-09-27

申请人： Koshi Tamamura ,  Hironori Tsukamoto ,  Masao Ikeda

发明人： Koshi Tamamura ,  Hironori Tsukamoto ,  Masao Ikeda

IPC分类号： C30B23/02 ,  C30B29/48 ,  H01L21/203 ,  H01L21/363 ,  H01L33/06 ,  H01L33/12 ,  H01L33/16 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00 ,  H01S5/347 ,  H01L21/20

CPC分类号： B82Y20/00 ,  H01L21/02395 ,  H01L21/02477 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02631 ,  H01S5/347 ,  H01S2304/02 ,  Y10S438/93

摘要： A method for growing a II-VI compound semiconductor layer containing Cd, such as Zn.sub.1-x Cd.sub.x Se, by a molecular beam epitaxy method is disclosed. During the growth, the ratio of the intensity of molecular beams of a group VI element to the intensity of molecular beams of a group II element in terms of intensities of molecular beams actually irradiated onto a substrate, namely, the substantial VI/II ratio, is controlled preferably in the range from 0.7 to 1.3, to increase the Cd incorporating efficiency into the grown layer sufficiently high.

摘要翻译： 公开了通过分子束外延法生长含有Cd的诸如Zn1-xCdxSe的II-VI化合物半导体层的方法。 在生长过程中，VI族元素的分子束强度与II族元素的分子束强度之比（实际照射到基片上的分子束的强度）即VI / II比， 控制优选在0.7至1.3的范围内，以将Cd掺入到生长层中的效率足够高。

公开(公告)号：US06875082B2

公开(公告)日：2005-04-05

申请号：US10665483

申请日：2003-09-22

申请人： Masahiro Nakayama ,  Naoki Matsumoto ,  Koshi Tamamura ,  Masao Ikeda

发明人： Masahiro Nakayama ,  Naoki Matsumoto ,  Koshi Tamamura ,  Masao Ikeda

IPC分类号： B24B37/00 ,  C30B29/38 ,  H01L21/20 ,  H01L21/304 ,  H01L21/306 ,  H01L21/02

CPC分类号： H01L21/02008 ,  B24B37/08 ,  H01L21/02024 ,  Y10S438/959

摘要： Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs. Ordinary one-surface polishing having the steps of gluing a wafer with a surface on a flat disc, bringing another surface in contact with a lower turntable, pressing the disc, rotating the disc, revolving the turntable and whetting the lower surface, cannot remedy the inherent distortion. The Distortion worsens morphology of epitaxial wafers, lowers yield of via-mask exposure and invites cracks on surfaces. Nitride crystals are rigid but fragile. Chemical/mechanical polishing has been requested in vain. Current GaN wafers have roughened bottom surfaces, which induce contamination of particles and fluctuation of thickness.Circular nitride wafers having a diameter larger than 45 mm are made and polished. Gross-polishing polishes the nitride wafers in a pressureless state with pressure less than 60 g/cm2 by lifting up the upper turntable for remedying distortion. Distortion height H at a center is reduced to H≦12 μm. Minute-polishing is a newly-contrived CMP which polishes the nitride wafers with a liquid including potassium hydroxide, potassium peroxodisulfate and powder, irradiates the potassium peroxodisulfate with ultraviolet rays. The CMP-polished top surface has roughness RMS of 0.1 nm≦RMS≦5 nm or more favorably 0.1 nm≦RMS≦0.5 nm. The CMP-polished bottom surface has roughness RMS of 0.1 nm≦RMS≦5000 nm or more favorably 0.1 nm≦RMS≦2 nm. TTV is less than 10 μm.

摘要翻译： 由氮化物和下衬底材料之间的失配导致的，由外延生长的氮化物膜在气相中的外来下衬衬底产生的氮化物半导体晶片具有很强的内部应力。 通过在气相中在GaAs下衬底上堆叠GaN膜而消除GaAs下衬层而制成的GaN晶片由于内部应力而由于GaN和GaAs之间的晶格常数的失配而向上弯曲。 通常的单面抛光具有将晶片与平面盘上的表面胶合的步骤，使另一表面与下转台接触，按压盘，旋转盘，旋转转台并磨削下表面，不能补救 固有失真。 失真会加剧外延晶片的形态，降低通孔掩模曝光的产量，并引起表面裂纹。 氮化物晶体是刚性但脆弱的。 化学/机械抛光已被要求徒劳。 当前的GaN晶圆已经粗糙化了底面，这引起了颗粒的污染和厚度的波动。制造和抛光了具有大于45mm直径的圆形氮化物晶片。 粗抛光通过抬起上转盘来补偿变形，在压力小于60g / cm 2的无压状态下抛光氮化物晶片。 中心处的失真高度H降低到H <= 12 mum。 分钟抛光是一种新设计的CMP，它们用包括氢氧化钾，过氧硫酸钾和粉末的液体对氮化物晶片进行抛光，用紫外线照射过氧二硫酸钾。 CMP抛光的顶表面的粗糙度RMS为0.1nm <= RMS <= 5nm或更优选为0.1nm <= RMS <= 0.5nm。 CMP抛光的底表面的粗糙度RMS为0.1nm <= RMS <= 5000nm或更优选为0.1nm <= RMS <= 2nm。 TTV小于10妈

公开(公告)号：US20090250790A1

公开(公告)日：2009-10-08

申请号：US12394477

申请日：2009-02-27

申请人： Masahiro NAKAYAMA ,  Naoki Matsumoto ,  Koshi Tamamura ,  Masao Ikeda

发明人： Masahiro NAKAYAMA ,  Naoki Matsumoto ,  Koshi Tamamura ,  Masao Ikeda

IPC分类号： H01L29/20 ,  H01L21/306

CPC分类号： H01L21/02008 ,  B24B37/08 ,  H01L21/02024 ,  Y10S438/959

摘要： Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs. Ordinary one-surface polishing having the steps of gluing a wafer with a surface on a flat disc, bringing another surface in contact with a lower turntable, pressing the disc, rotating the disc, revolving the turntable and whetting the lower surface, cannot remedy the inherent distortion. The Distortion worsens morphology of epitaxial wafers, lowers yield of via-mask exposure and invites cracks on surfaces. Nitride crystals are rigid but fragile. Chemical/mechanical polishing has been requested in vain. Current GaN wafers have roughened bottom surfaces, which induce contamination of particles and fluctuation of thickness.Circular nitride wafers having a diameter larger than 45 mm are made and polished. Gross-polishing polishes the nitride wafers in a pressureless state with pressure less than 60 g/cm2 by lifting up the upper turntable for remedying distortion. Distortion height H at a center is reduced to H≦12 μm. Minute-polishing is a newly-contrived CMP which polishes the nitride wafers with a liquid including potassium hydroxide, potassium peroxodisulfate and powder, irradiates the potassium peroxodisulfate with ultraviolet rays. The CMP-polished top surface has roughness RMS of 0.1 nm≦RMS≦5 nm or more favorably 0.1 nm≦RMS≦0.5 nm. The CMP-polished bottom surface has roughness RMS of 0.1 nm≦RMS≦5000 nm or more favorably 0.1 nm≦RMS≦2 nm. TTV is less than 10 μm.

摘要翻译： 由氮化物和下衬底材料之间的失配导致的，由外延生长的氮化物膜在气相中的外来下衬衬底产生的氮化物半导体晶片具有很强的内部应力。 通过在气相中在GaAs下衬底上堆叠GaN膜而消除GaAs下衬层而制成的GaN晶片由于内部应力而由于GaN和GaAs之间的晶格常数的失配而向上弯曲。 通常的单面抛光具有将晶片与平面盘上的表面胶合的步骤，使另一表面与下转台接触，按压盘，旋转盘，旋转转台并磨削下表面，不能补救 固有失真。 失真会加剧外延晶片的形态，降低通孔掩模曝光的产量，并引起表面裂纹。 氮化物晶体是刚性但脆弱的。 化学/机械抛光已被要求徒劳。 当前的GaN晶圆已经粗糙化了底面，这引起了颗粒的污染和厚度的波动。 制造和抛光直径大于45mm的圆形氮化物晶片。 粗抛光通过提升上转盘来补偿变形，在压力小于60g / cm2的无压状态下抛光氮化物晶片。 中心处的失真高度H降低到H <= 12 mum。 分钟抛光是一种新设计的CMP，它们用包括氢氧化钾，过氧硫酸钾和粉末的液体对氮化物晶片进行抛光，用紫外线照射过氧二硫酸钾。 CMP抛光的顶表面的粗糙度RMS为0.1nm <= RMS <= 5nm或更优选为0.1nm <= RMS <= 0.5nm。 CMP抛光的底表面的粗糙度RMS为0.1nm <= RMS <= 5000nm或更优选为0.1nm <= RMS <= 2nm。 TTV小于10妈

公开(公告)号：US07786488B2

公开(公告)日：2010-08-31

申请号：US12394477

申请日：2009-02-27

申请人： Masahiro Nakayama ,  Naoki Matsumoto ,  Koshi Tamamura ,  Masao Ikeda

发明人： Masahiro Nakayama ,  Naoki Matsumoto ,  Koshi Tamamura ,  Masao Ikeda

IPC分类号： H01L31/0312

CPC分类号： H01L21/02008 ,  B24B37/08 ,  H01L21/02024 ,  Y10S438/959

摘要： Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs.

摘要翻译： 由氮化物和下衬底材料之间的失配导致的，由外延生长的氮化物膜在气相中的外来下衬衬底产生的氮化物半导体晶片具有很强的内部应力。 通过在气相中在GaAs下衬底上堆叠GaN膜而消除GaAs下衬层而制成的GaN晶片由于内部应力而由于GaN和GaAs之间的晶格常数的失配而向上弯曲。

公开(公告)号：US20050145879A1

公开(公告)日：2005-07-07

申请号：US11055599

申请日：2005-02-11

申请人： Masahiro Nakayama ,  Naoki Matsumoto ,  Koshi Tamamura ,  Masao Ikeda

发明人： Masahiro Nakayama ,  Naoki Matsumoto ,  Koshi Tamamura ,  Masao Ikeda

IPC分类号： B24B37/00 ,  C30B29/38 ,  H01L21/20 ,  H01L21/304 ,  H01L21/306 ,  H01L33/00 ,  H01L21/00

CPC分类号： H01L21/02008 ,  B24B37/08 ,  H01L21/02024 ,  Y10S438/959

摘要： Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs. Ordinary one-surface polishing having the steps of gluing a wafer with a surface on a flat disc, bringing another surface in contact with a lower turntable, pressing the disc, rotating the disc, revolving the turntable and whetting the lower surface, cannot remedy the inherent distortion. The Distortion worsens morphology of epitaxial wafers, lowers yield of via-mask exposure and invites cracks on surfaces. Nitride crystals are rigid but fragile. Chemical/mechanical polishing has been requested in vain. Current GaN wafers have roughened bottom surfaces, which induce contamination of particles and fluctuation of thickness. Circular nitride wafers having a diameter larger than 45 mm are made and polished. Gross-polishing polishes the nitride wafers in a pressureless state with pressure less than 60 g/cm2 by lifting up the upper turntable for remedying distortion. Distortion height H at a center is reduced to H≦12 μm. Minute-polishing is a newly-contrived CMP which polishes the nitride wafers with a liquid including potassium hydroxide, potassium peroxodisulfate and powder, irradiates the potassium peroxodisulfate with ultraviolet rays. The CMP-polished top surface has roughness RMS of 0.1 nm≦RMS≦5 nm or more favorably 0.1 nm≦RMS≦0.5 nm. The CMP-polished bottom surface has roughness RMS of 0.1 nm≦RMS≦5000 nm or more favorably 0.1 nm≦RMS≦2 nm. TTV is less than 10 μm.

摘要翻译： 由氮化物和下衬底材料之间的失配导致的，由外延生长的氮化物膜在气相中的外来下衬衬底产生的氮化物半导体晶片具有很强的内部应力。 通过在气相中在GaAs下衬底上堆叠GaN膜而消除GaAs下衬层而制成的GaN晶片由于内部应力而由于GaN和GaAs之间的晶格常数的失配而向上弯曲。 通常的单面抛光具有将晶片与平面盘上的表面胶合的步骤，使另一表面与下转台接触，按压盘，旋转盘，旋转转台并磨削下表面，不能补救 固有失真。 失真会加剧外延晶片的形态，降低通孔掩模曝光的产量，并引起表面裂纹。 氮化物晶体是刚性但脆弱的。 化学/机械抛光已被要求徒劳。 当前的GaN晶圆已经粗糙化了底面，这引起了颗粒的污染和厚度的波动。 制造和抛光直径大于45mm的圆形氮化物晶片。 通过抬起上转盘来补偿变形，粗抛光在压力低于60g / cm 2的无压状态下抛光氮化物晶片。 中心处的失真高度H降低到H <= 12 mum。 分钟抛光是一种新设计的CMP，它们用含氢氧化钾，过氧硫酸钾和粉末的液体对氮化物晶片进行抛光，用紫外线照射过氧二硫酸钾。 CMP抛光的顶表面的粗糙度RMS为0.1nm <= RMS <= 5nm或更优选为0.1nm <= RMS <= 0.5nm。 CMP抛光的底表面的粗糙度RMS为0.1nm <= RMS <= 5000nm或更优选为0.1nm <= RMS <= 2nm。 TTV小于10妈

公开(公告)号：US08008165B2

公开(公告)日：2011-08-30

申请号：US12836001

申请日：2010-07-14

申请人： Masahiro Nakayama ,  Naoki Matsumoto ,  Koshi Tamamura ,  Masao Ikeda

发明人： Masahiro Nakayama ,  Naoki Matsumoto ,  Koshi Tamamura ,  Masao Ikeda

IPC分类号： H01L21/30

CPC分类号： H01L21/02008 ,  B24B37/08 ,  H01L21/02024 ,  Y10S438/959

摘要： Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs.

摘要翻译： 由氮化物和下衬底材料之间的失配导致的，由外延生长的氮化物膜在气相中的外来下衬衬底产生的氮化物半导体晶片具有很强的内部应力。 通过在气相中在GaAs下衬底上堆叠GaN膜而消除GaAs下衬层而制成的GaN晶片由于内部应力而由于GaN和GaAs之间的晶格常数的失配而向上弯曲。