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    Determination of critical film thickness of a compound semiconductor layer, and a method for manufacturing a semiconductor device using the method of determination
    2.
    发明授权
    Determination of critical film thickness of a compound semiconductor layer, and a method for manufacturing a semiconductor device using the method of determination 失效
    化合物半导体层的临界膜厚的测定，以及使用该测定方法制造半导体器件的方法

    公开(公告)号：US6024794A

    公开(公告)日：2000-02-15

    申请号：US932869

    申请日：1997-09-18

    申请人： Koshi Tamamura ,  Hironori Tsukamoto ,  Masaharu Nagai

    发明人： Koshi Tamamura ,  Hironori Tsukamoto ,  Masaharu Nagai

    IPC分类号： C30B25/16 ,  H01L21/66 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00

    CPC分类号： C30B25/16 ,  H01L22/12 ,  H01L2924/0002

    摘要： By applying the method, the critical film thickness of a compound semiconductor layer is determined, and a semiconductor device having a compound semiconductor layer with an optimized film thickness excellent in emitting performance is manufactured.The relationship between film thickness of a compound semiconductor layer and photoluminescence (PL) corresponding to the film thickness is obtained by measurement, the film thickness where PL exhibits a peak is designated as critical film thickness. The semiconductor layer comprises II-VI group compound semiconductor layer containing at least cadmium. The relationship between the critical film thickness and cadmium composition ratio is obtained by measurement. An equation which approximates the relationship between the critical film thickness and cadmium composition ratio is formulated. When a semiconductor device is manufactured, a compound semiconductor layer is formed so as that the thickness of the layer is thinner than the critical film thickness determined from the equation.

    摘要翻译： 通过应用该方法，确定化合物半导体层的临界膜厚度，制造具有发光性能优异的膜厚化合物半导体层的半导体装置。 化合物半导体层的膜厚与膜厚对应的光致发光（PL）之间的关系是通过测量获得的，其中PL表现出峰值的膜厚度被指定为临界膜厚度。 半导体层包含至少含有镉的II-VI族化合物半导体层。 通过测量获得临界膜厚度和镉组成比之间的关系。 制定近似临界膜厚度和镉组成比之间关系的方程式。 当制造半导体器件时，形成化合物半导体层，使得层的厚度比由等式确定的临界膜厚度薄。

    Determination of critical film thickness of a compound semiconductor layer, and a method for manufacturing a semiconductor device using the method of determination
    3.
    发明授权
    Determination of critical film thickness of a compound semiconductor layer, and a method for manufacturing a semiconductor device using the method of determination 失效
    化合物半导体层的临界膜厚的测定，以及使用该测定方法制造半导体器件的方法

    公开(公告)号：US5695556A

    公开(公告)日：1997-12-09

    申请号：US555834

    申请日：1995-11-13

    申请人： Koshi Tamamura ,  Hironori Tsukamoto ,  Masaharu Nagai ,  Masao Ikeda

    发明人： Koshi Tamamura ,  Hironori Tsukamoto ,  Masaharu Nagai ,  Masao Ikeda

    IPC分类号： C30B25/16 ,  H01L21/66 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00

    CPC分类号： C30B25/16 ,  H01L22/12 ,  H01L2924/0002

    摘要： By applying the method, the critical film thickness of a compound semiconductor layer is determined, and a semiconductor device having a compound semiconductor layer with an optimized film thickness excellent in emitting performance is manufactured. The relationship between film thickness of a compound semiconductor layer and photoluminescence (PL) corresponding to the film thickness is obtained by measurement, the film thickness where PL exhibits a peak is designated as critical film thickness. The semiconductor layer comprises II-VI group compound semiconductor layer containing at least cadmium. The relationship between the critical film thickness and cadmium composition ratio is obtained by measurement. An equation which approximates the relationship between the critical film thickness and cadmium composition ratio is formulated. When a semiconductor device is manufactured, a compound semiconductor layer is formed so as that the thickness of the layer is thinner than the critical film thickness determined from the equation.

    摘要翻译： 通过应用该方法，确定化合物半导体层的临界膜厚度，制造具有发光性能优异的膜厚化合物半导体层的半导体装置。 化合物半导体层的膜厚与膜厚对应的光致发光（PL）之间的关系是通过测量获得的，其中PL表现出峰值的膜厚度被指定为临界膜厚度。 半导体层包含至少含有镉的II-VI族化合物半导体层。 通过测量获得临界膜厚度和镉组成比之间的关系。 制定近似临界膜厚度和镉组成比之间关系的方程式。 当制造半导体器件时，形成化合物半导体层，使得层的厚度比由等式确定的临界膜厚度薄。

    LIGHT EXPOSURE MASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
    5.
    发明申请
    LIGHT EXPOSURE MASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
    光曝光掩模及使用其制造半导体器件的方法

    公开(公告)号：US20110170084A1

    公开(公告)日：2011-07-14

    申请号：US13069491

    申请日：2011-03-23

    申请人： Hideto Ohnuma ,  Masaharu Nagai

    发明人： Hideto Ohnuma ,  Masaharu Nagai

    IPC分类号： G03B27/72

    CPC分类号： H01L27/1288 ,  G03F1/50 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78621

    摘要： The present invention provides a light exposure mask which can form a photoresist layer in a semi-transmissive portion with uniform thickness, and a method for manufacturing a semiconductor device in which the number of photolithography steps (the number of masks) necessary for manufacturing a TFT substrate is reduced by using the light exposure mask. A light exposure mask is used, which includes a transmissive portion, a light shielding portion, and a semi-transmissive portion having a light intensity reduction function where lines and spaces are repeatedly formed, wherein the sum of a line width L of a light shielding material and a space width S between light shielding materials in the semi-transmissive portion satisfies a conditional expression (2n/3)×m≦L+S≦(6n/5)×m when a resolution of a light exposure apparatus is represented by n and a projection magnification is represented by 1/m (m≧1).

    摘要翻译： 本发明提供一种能够在均匀厚度的半透射部分中形成光致抗蚀剂层的曝光掩模，以及制造半导体器件的方法，其中制造TFT所需的光刻步骤数（掩模数） 通过使用曝光掩模来减少衬底。 使用曝光掩模，其包括透射部分，遮光部分和具有重复形成线和间隔的光强降低功能的半透射部分，其中遮光层的线宽L之和 材料和半透射部分的遮光材料之间的空间宽度S满足条件表达式（2n / 3）×m＆nlE; L + S＆nlE;（6n / 5）×m，当曝光装置的分辨率由 n，投影倍率由1 / m（m≥1）表示。

    Method for manufacturing SOI substrate
    6.
    发明授权
    Method for manufacturing SOI substrate 有权
    制造SOI衬底的方法

    公开(公告)号：US07829432B2

    公开(公告)日：2010-11-09

    申请号：US12489594

    申请日：2009-06-23

    申请人： Hideto Ohnuma ,  Kenichiro Makino ,  Yoichi Iikubo ,  Masaharu Nagai ,  Aiko Shiga

    发明人： Hideto Ohnuma ,  Kenichiro Makino ,  Yoichi Iikubo ,  Masaharu Nagai ,  Aiko Shiga

    IPC分类号： H01L21/30 ,  H01L21/46

    CPC分类号： H01L21/84 ,  H01L21/76254 ,  H01L29/66772 ,  H01L29/78621

    摘要： To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconductor substrate side, a nitrogen-containing layer is provided on the base substrate side, and the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate are bonded to each other. Further, plasma treatment is performed on at least one of the oxide film and the nitrogen-containing layer before bonding the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate to each other. Plasma treatment can be performed in a state in which a bias voltage is applied.

    摘要翻译： 即使使用含有氮的绝缘膜作为接合层，为了提高接合强度并提高SOI基板的接合半导体基板和基板的可靠性，在半导体基板侧设置氧化膜，氮 在基底基板侧设置含氧层，并且形成在半导体基板上的氧化膜和形成在基底基板上的含氮层彼此结合。 此外，在将形成在半导体衬底上的氧化膜和形成在基底衬底上的含氮层彼此粘合之前，对氧化物膜和含氮层中的至少一种进行等离子体处理。 可以在施加偏置电压的状态下进行等离子体处理。

    Light emitting device and method for manufacturing the same
    7.
    发明授权
    Light emitting device and method for manufacturing the same 有权
    发光元件及其制造方法

    公开(公告)号：US07816863B2

    公开(公告)日：2010-10-19

    申请号：US10933507

    申请日：2004-09-03

    申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Takashi Hamada ,  Masaharu Nagai ,  Yutaka Matsuda

    发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Takashi Hamada ,  Masaharu Nagai ,  Yutaka Matsuda

    IPC分类号： H05B33/22

    CPC分类号： H01L27/3258 ,  H01L21/31608 ,  H01L27/3246 ,  H01L27/3276 ,  H01L51/5206 ,  H01L51/5218 ,  H01L51/5246 ,  H01L51/5281 ,  H01L51/529 ,  H01L2251/5315 ,  H01L2251/5323

    摘要： An object of the present invention is to realize a light emitting device having low power consumption and high stability, in addition to improve extraction efficiency of light generated in a light emitting element. At least an interlayer insulating film (including a planarizing film), an anode, and a bank covering an edge portion of the anode contain-chemically and physically stable silicon oxide, or are made of a material containing silicon oxide as its main component in order to accomplish a light emitting device having high stability. Generation of heat in a light emitting panel can be suppressed in addition to increase in efficiency (luminance/current) of a light emitting panel according to the structure of the present invention. Consequently, synergistic effect on reliability of a light emitting device is obtained.

    摘要翻译： 本发明的目的是提供一种具有低功耗和高稳定性的发光器件，同时提高了在发光元件中产生的光的提取效率。 至少层间绝缘膜（包括平坦化膜），阳极和覆盖阳极的边缘部分的堤包含化学和物理稳定的氧化硅，或者由以氧化硅为主要成分的材料按顺序制成 以实现具有高稳定性的发光器件。 除了根据本发明的结构提高发光面板的效率（亮度/电流）之外，还可以抑制发光面板中的发热。 因此，获得了对发光器件的可靠性的协同效应。

    Electronics device, semiconductor device, and method for manufacturing the same
    8.
    发明授权
    Electronics device, semiconductor device, and method for manufacturing the same 有权
    电子器件，半导体器件及其制造方法

    公开(公告)号：US07465593B2

    公开(公告)日：2008-12-16

    申请号：US12007293

    申请日：2008-01-09

    申请人： Shunpei Yamazaki ,  Masaharu Nagai ,  Osamu Nakamura

    发明人： Shunpei Yamazaki ,  Masaharu Nagai ,  Osamu Nakamura

    IPC分类号： H01L21/00

    CPC分类号： H01L27/3244 ,  G02F1/13454 ,  G02F1/136227 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/3246 ,  H01L27/3258 ,  H01L51/5246 ,  H01L51/529 ,  H01L2251/5323

    摘要： It is an object of the present invention to provide a high reliable EL display device and a manufacturing method thereof by shielding intruding moisture or oxygen which is a factor of deteriorating the property of an EL element without enlarging the EL display device.In the invention, application is used as a method for forming a high thermostability planarizing film 16, typically, an interlayer insulating film (a film which serves as a base film of a light emitting element later) of a TFT in which a skeletal structure is configured by the combination of silicon (Si) and oxygen (O). After the formation, an edge portion or an opening portion is formed to have a tapered shape. Afterwards, distortion is given by adding an inert element with a comparatively large atomic radius to modify or highly densify a surface (including a side surface) for preventing the intrusion of moisture or oxygen.

    摘要翻译： 本发明的目的是提供一种高可靠性的EL显示装置及其制造方法，该EL显示装置及其制造方法通过屏蔽侵入的水分或氧气，这是使EL元件的特性劣化而不扩大EL显示装置的因素。 在本发明中，作为用于形成高热稳定性平坦化膜16的方法，通常使用其中骨架结构是TFT的TFT层的绝缘膜（用作发光元件的基膜的膜） 由硅（Si）和氧（O）的组合构成。 在形成之后，形成具有锥形形状的边缘部分或开口部分。 然后，通过添加具有较大原子半径的惰性元素来改变或高度致密化表面（包括侧表面）以防止水分或氧气的侵入而给出变形。