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32 条记录 (耗时 0.057 秒)

    Method of making silicon diaphragm pressure sensor
    2.
    发明授权
    Method of making silicon diaphragm pressure sensor 失效
    制造硅膜压力传感器的方法

    公开(公告)号：US4670969A

    公开(公告)日：1987-06-09

    申请号：US694990

    申请日：1985-01-25

    申请人： Kazuji Yamada ,  Yutaka Kobayashi ,  Kanji Kawakami ,  Satoshi Shimada ,  Masanori Tanabe ,  Shigeyuki Kobori

    发明人： Kazuji Yamada ,  Yutaka Kobayashi ,  Kanji Kawakami ,  Satoshi Shimada ,  Masanori Tanabe ,  Shigeyuki Kobori

    IPC分类号： H01L29/84 ,  G01L9/00 ,  G01P15/08 ,  H01L21/428

    CPC分类号： G01L9/0042 ,  G01P15/0802 ,  G01P2015/084 ,  Y10S148/012 ,  Y10S148/159 ,  Y10S148/168 ,  Y10T29/42 ,  Y10T29/49103

    摘要： A method of making a silicon diaphragm pressure sensor includes forming an oxide film on one surface of a monocrystalline silicon substrate. A polycrystalline silicon layer is formed on the oxide film. The oxide film may be partly removed before the formation of the polycrystalline silicon layer. The polycrystalline silicon layer is heated and melt to recrystallize the same, thereby converting the polycrystalline silicon layer into a monocrystalline silicon layer. On the monocrystalline silicon layer may be epitaxially grown an additional monocrystalline silicon layer. By using the oxide film as an etching stopper, a predetermined portion of the substrate is etched over a range from the other surface of the substrate to the oxide film, thereby providing a diaphragm of the pressure sensor.

    摘要翻译： 制造硅膜压力传感器的方法包括在单晶硅衬底的一个表面上形成氧化膜。 在氧化物膜上形成多晶硅层。 在形成多晶硅层之前可以部分地去除氧化膜。 将多晶硅层加热熔化，使其重结晶，从而将多晶硅层转化为单晶硅层。 在单晶硅层上可以外延生长另外的单晶硅层。 通过使用氧化膜作为蚀刻停止层，在从衬底的另一个表面到氧化膜的范围内蚀刻衬底的预定部分，从而提供压力传感器的隔膜。

    Pressure sensor with improved semiconductor diaphragm
    3.
    发明授权
    Pressure sensor with improved semiconductor diaphragm 失效
    带有改进的半导体膜片的压力传感器

    公开(公告)号：US4511878A

    公开(公告)日：1985-04-16

    申请号：US534076

    申请日：1983-09-20

    申请人： Satoshi Shimada ,  Ken Murayama ,  Shigeyuki Kobori ,  Kanji Kawakami

    发明人： Satoshi Shimada ,  Ken Murayama ,  Shigeyuki Kobori ,  Kanji Kawakami

    IPC分类号： G01L9/04 ,  G01L9/00 ,  G01L9/06

    CPC分类号： G01L9/0054 ,  G01L19/147 ,  Y10S73/04

    摘要： Provided is a pressure sensor of semiconductor type, having a semiconductor diaphragm, wherein the diaphragm comprises at least one of thin wall parts and at least one of thick wall parts, and defines therein recesses formed in the lower surface of the diaphragm below the thin wall parts, piezoresistance elements are laid on the upper surface of the diaphragm near the thin wall parts, and a supporting member is sealingly jointed to the thick wall parts at the lower surface of the diaphragm, so that the recesses are sealed and confined so as to prevent high pressure fluid from blowing off when the thin wall part is broken.

    摘要翻译： 提供一种具有半导体膜片的半导体型压力传感器，其中隔膜包括薄壁部分和至少一个厚壁部分中的至少一个，并且在其中限定形成在薄壁​​下方的隔膜的下表面中的凹部 零件，压阻元件放置在薄壁部分附近的隔膜的上表面上，并且支撑构件与隔膜的下表面的厚壁部分密封地接合，使得凹部被密封和限制，以便 当薄壁部分破裂时，防止高压液体吹走。

    Capacitive pressure sensor
    5.
    发明授权
    Capacitive pressure sensor 失效
    电容式压力传感器

    公开(公告)号：US4257274A

    公开(公告)日：1981-03-24

    申请号：US59552

    申请日：1979-07-23

    申请人： Satoshi Shimada ,  Kanji Kawakami ,  Motohisa Nishihara

    发明人： Satoshi Shimada ,  Kanji Kawakami ,  Motohisa Nishihara

    IPC分类号： G01L9/12 ,  G01L9/00 ,  G01L13/02

    CPC分类号： G01L13/025 ,  G01L9/0042 ,  G01L9/0072 ,  G01L9/0073

    摘要： A capacitive pressure sensor is provided which has a conductive silicon diaphragm having a thick supporting portion at the periphery thereof and a thin inner deflecting portion which is reduced in thickness from the supporting portion by means of an etching process which makes possible a very accurate dimensioning of the hollow formed by the deflecting portion of the diaphragm. A substrate of borosilicate glass has a flat surface which is placed against the side of the diaphragm in contact with the supporting portion and the two elements are joined by a process of anodic bonding so that a pressure chamber is formed between the substrate and the thin deflecting portion of the diaphragm. Within the pressure chamber, a thin electrode is provided on the surface of the substrate thereby forming electrostatic capacity between the substrate and the diaphragm and a hole is provided through the substrate for supplying of fluid into the pressure chamber.

    摘要翻译： 提供一种电容式压力传感器，其具有导电硅膜片，其外围具有厚的支撑部分，以及薄的内部偏转部分，其通过蚀刻工艺从支撑部分减小厚度，这使得可能非常精确的尺寸 由隔膜的偏转部分形成的中空部。 硼硅酸盐玻璃的基板具有平坦表面，该平坦表面抵靠隔膜的与支撑部分接触的一侧放置，并且两个元件通过阳极接合的过程相连，使得在基板和薄偏转之间形成压力室 隔膜的一部分。 在压力室内，在基板的表面上设置有薄的电极，从而在基板和隔膜之间形成静电电容，并且通过基板设置有用于向压力室供给流体的孔。

    Method for making a thin film magnetic head
    9.
    发明授权
    Method for making a thin film magnetic head 失效
    制造薄膜磁头的方法

    公开(公告)号：US4861398A

    公开(公告)日：1989-08-29

    申请号：US123278

    申请日：1987-11-20

    申请人： Hirotsugu Fukuoka ,  Kanji Kawakami ,  Makoto Aihara ,  Mitsuo Suda ,  Kouji Takeshita ,  Yukihiro Isono

    发明人： Hirotsugu Fukuoka ,  Kanji Kawakami ,  Makoto Aihara ,  Mitsuo Suda ,  Kouji Takeshita ,  Yukihiro Isono

    IPC分类号： G11B5/31 ,  G11B5/455

    CPC分类号： G11B5/3166 ,  G11B5/455 ,  Y10T29/49036 ,  Y10T29/49044 ,  Y10T29/49046

    摘要： DC bias currents are applied to a conducting wire of a thin film magnetic head to be inspected. When the DC bias currents (I.sub.0, I.sub.1, I.sub.2) are supplied to the conducting wire, the impedances (Z.sub.0, Z.sub.1, Z.sub.2) corresponding to the DC bias currents are measured. When a ratio (.vertline.Z.sub.1 -Z.sub.0 .vertline./.vertline.Z.sub.2 -Z.sub.0 .vertline.) corresponding to an overwrite characteristic (OW) reaches to a predetermined value by lapping tip portions of an upper magnetic layer and a lower magnetic layer of the magnetic head, the lapping process of the magnetic head is finished.

    摘要翻译： 将直流偏置电流施加到待检查的薄膜磁头的导线上。 当直流偏置电流（I0，I1，I2）被提供给导线时，测量对应于直流偏置电流的阻抗（Z0，Z1，Z2）。 当通过研磨磁头的上部磁性层和下部磁性层的尖端部分而将与覆盖特性（OW）相对应的比率（| Z1-Z0 | / | Z2-Z0））达到预定值时，研磨 磁头的处理完成。