Capacitive pressure sensor
    3.
    发明授权
    Capacitive pressure sensor 失效
    电容式压力传感器

    公开(公告)号:US4257274A

    公开(公告)日:1981-03-24

    申请号:US59552

    申请日:1979-07-23

    IPC分类号: G01L9/12 G01L9/00 G01L13/02

    摘要: A capacitive pressure sensor is provided which has a conductive silicon diaphragm having a thick supporting portion at the periphery thereof and a thin inner deflecting portion which is reduced in thickness from the supporting portion by means of an etching process which makes possible a very accurate dimensioning of the hollow formed by the deflecting portion of the diaphragm. A substrate of borosilicate glass has a flat surface which is placed against the side of the diaphragm in contact with the supporting portion and the two elements are joined by a process of anodic bonding so that a pressure chamber is formed between the substrate and the thin deflecting portion of the diaphragm. Within the pressure chamber, a thin electrode is provided on the surface of the substrate thereby forming electrostatic capacity between the substrate and the diaphragm and a hole is provided through the substrate for supplying of fluid into the pressure chamber.

    摘要翻译: 提供一种电容式压力传感器,其具有导电硅膜片,其外围具有厚的支撑部分,以及薄的内部偏转部分,其通过蚀刻工艺从支撑部分减小厚度,这使得可能非常精确的尺寸 由隔膜的偏转部分形成的中空部。 硼硅酸盐玻璃的基板具有平坦表面,该平坦表面抵靠隔膜的与支撑部分接触的一侧放置,并且两个元件通过阳极接合的过程相连,使得在基板和薄偏转之间形成压力室 隔膜的一部分。 在压力室内,在基板的表面上设置有薄的电极,从而在基板和隔膜之间形成静电电容,并且通过基板设置有用于向压力室供给流体的孔。

    Semiconductor strain gauge with temperature compensator
    5.
    发明授权
    Semiconductor strain gauge with temperature compensator 失效
    带温度补偿器的半导体应变片

    公开(公告)号:US4173148A

    公开(公告)日:1979-11-06

    申请号:US948778

    申请日:1978-10-05

    摘要: A bridge circuit with four arms including semiconductor strain gauge elements has input terminals for coupling a DC power supply with a pair of diagonally opposite junctions of the bridge circuit per se and output terminals coupled with a pair of remaining diagonally opposite junctions. Initial zero-point temperature compensators each are connected in series and in parallel to each of semiconductor strain gauge elements on adjacent two arms of the bridge circuit. Temperature compensators for zero-point shift adjustment are each provided between the adjacent arms closer to each output terminal. A temperature compensator for span adjustment is provided between one of the input terminals and the DC power source. A constant current control unit for feeding a constant current to the bridge circuit is provided between the other input terminal and the DC power supply.

    摘要翻译: 具有包括半导体应变计元件的四个臂的桥接电路具有用于将直流电源与桥接电路本身的一对斜对置接头连接的输入端子以及与一对剩余的对角线相对的接合部连接的输出端子。 初始零点温度补偿器各自与桥式电路的相邻两个臂上的每个半导体应变计元件串联并联。 用于零点移位调整的温度补偿器分别设置在靠近每个输出端子的相邻臂之间。 在一个输入端子和直流电源之间提供用于量程调节的温度补偿器。 在另一个输入端子和直流电源之间设置用于向桥式电路馈送恒定电流的恒定电流控制单元。

    Capacitive pressure sensor
    9.
    发明授权
    Capacitive pressure sensor 失效
    电容式压力传感器

    公开(公告)号:US4495820A

    公开(公告)日:1985-01-29

    申请号:US426084

    申请日:1982-09-28

    CPC分类号: H01L27/20 G01L9/0073 H01G5/16

    摘要: A capacitive pressure sensor and its manufacturing method are disclosed. An amplifier is formed on the main surface of a first semiconductor substrate by a diffusion process, and its surface is covered with an insulating film. An electrode is vapor-deposited on the surface of the amplifier and electrically connected to the amplifier through a through hole formed in the insulating film. For forming a diaphragm, the surface of a second semiconductor substrate disposed facing the electrode to form a capacitor, which is opposite to the surface of the second semiconductor substrate facing the electrode, is partially etched away to form a depression. The first and second semiconductor substrates are anodically bonded to each other using a glass layer.

    摘要翻译: 公开了一种电容式压力传感器及其制造方法。 通过扩散处理在第一半导体衬底的主表面上形成放大器,并且其表面被绝缘膜覆盖。 电极沉积在放大器的表面上,并通过形成在绝缘膜上的通孔与放大器电连接。 为了形成光阑,第二半导体衬底的与电极相对配置以形成与面向电极的第二半导体衬底的表面相反的电容器的表面被部分蚀刻掉以形成凹陷。 使用玻璃层将第一和第二半导体衬底彼此阳极接合。