摘要:
Provided is a dielectric ceramics having crystals of a composition formula: aBaO.bCoO.cZnO.dNb2O5 wherein coefficients a, b, c and d satisfy 0.498≦a
摘要翻译:本发明提供一种具有以下结构式的结构的电介质陶瓷:aBaO.bCoO.cZnO.dNb2O5,其中系数a,b,c和d满足0.498&nlE; a <0.500,0.066和nlE; b&nlE; 0.132,0.033和nlE; c& 和0.335&nlE; d&nlE; 0.338。 提供一种具有由BaO,CoO,ZnO和Nb 2 O 5组成的晶体的电介质陶瓷,其中存在于2附近的晶体峰IA与18之间的峰值强度比IA / IB和存在于附近的晶体峰值IB 的X射线衍射图中的2θ= 31°为0.003以上。 提供了使用电介质陶瓷作为电介质体的谐振器。
摘要:
A polyimidesilicone resin precursor composition which comprises a polysiloxane of the following general formula ##STR1## wherein R is a monovalent organic group having up to 10 carbon atoms, R.sup.1 represents a hydrogen atom or a monovalent organic group having up to 10 carbon atoms, and m is an integer not smaller than 3, and a polyamic acid or a polyimide obtained from the polyamic acid. The composition is cured at a relatively low temperature within a short time to provide a cured film having improved solvent and heat resistances and good adhesion to various substrates.
摘要:
A photosensitive resin composition which comprises (A) a polyimide resin precursor of recurring units of a specific type, (B) at least one member selected from the group consisting of photosensitive diazoquinone compounds of the following formulas ##STR1## wherein R.sup.2 represents an organic group having from 1 to 50 carbon atoms, i is an integer of from 1 to 7, and i is an integer of from 1 to 7, and (C) a phenolic novolac resin. A method for forming a polyimide film pattern on various types of substrates is also described wherein a composition film is alkali-developed after imagewise exposure and cured to provide a heat-resistant polyimide film pattern suitable for protecting the substrate.
摘要:
There are provided a dielectric ceramic having a high Qf value in a relative permittivity ∈r range of 35 to 45, and a small absolute value of a temperature coefficient τf which indicates change of the resonant frequency in a wide temperature range from a low temperature range to a high temperature range, and a dielectric filter having the dielectric ceramic. A dielectric ceramic includes: a main component, molar ratios α, β, and γ satisfying expressions of 0.240≦α≦0.470, 0.040≦β≦0.200, 0.400≦γ≦0.650, and α+β+γ=1 when a composition formula of the main component is represented as αZrO2.βSnO2.γTiO2; and Mn, a content of Mn in terms of MnO2 being greater than or equal to 0.01% by mass and less than 0.1% by mass with respect to 100% by mass of the main component.
摘要:
There are provided a dielectric ceramic having a high Qf value in a relative permittivity ∈r range of 35 to 45, and a small absolute value of a temperature coefficient τf which indicates change of the resonant frequency in a wide temperature range from a low temperature range to a high temperature range, and a dielectric filter having the dielectric ceramic. A dielectric ceramic includes: a main component, molar ratios α, β, and γ satisfying expressions of 0.240≦α≦0.470, 0.040≦β≦0.200, 0.400≦γ≦0.650, and α+β+γ=1 when a composition formula of the main component is represented as αZrO2.βSnO2.γTiO2; and Mn, a content of Mn in terms of MnO2 being greater than or equal to 0.01% by mass and less than 0.1% by mass with respect to 100% by mass of the main component.
摘要:
A dielectric ceramic which is capable of stably having a desired relative dielectric constant (εr), while having high Q value and good temperature coefficient of the resonance frequency. Specifically disclosed is a dielectric ceramic which contains lanthanum, magnesium, calcium and titanium, and when the compositional formula of the components is expressed as αLa2Ox.βMgO.γCaO.δTiO2 (wherein 3≦x≦4), the molar ratios α, β, γ and δ satisfy the formulae below. The dielectric ceramic also contains aluminum in an amount of 5% by mass or less (excluding 0% by mass) in terms of oxides relative to 100% by mass of the above-mentioned components. 0.160≦α≦0.270 0.050≦β≦0.100 0.260≦γ≦0.390 0.360≦δ≦0.430 α+β+γ+δ=1
摘要:
In a crystal element of the type wherein a DT-cut crystal element is used to generate vibrations of the contour mode, one side of the crystal element is flat and the thickness of the element is gradually decreased from the center toward the periphery thereof.