公开(公告)号：US08022291B2

公开(公告)日：2011-09-20

申请号：US12285890

申请日：2008-10-15

申请人： Scott V. Thomsen ,  Yiwei Lu ,  Alexey Krasnov

发明人： Scott V. Thomsen ,  Yiwei Lu ,  Alexey Krasnov

IPC分类号： H01L31/00 ,  H01L21/00 ,  C23C14/00

CPC分类号： H01L31/1884 ,  H01L31/022466 ,  H01L31/0236 ,  Y02E10/50

摘要： Certain example embodiments of this invention relate to a photovoltaic (PV) device including an electrode such as a front electrode/contact, and a method of making the same. In certain example embodiments, the front electrode has a textured (e.g., etched) surface that faces the photovoltaic semiconductor film of the PV device. The front electrode has a transparent conductive oxide (TCO) film having first and second layers (continuous or discontinuous) of the same material (e.g., zinc oxide, zinc aluminum oxide, indium-tin-oxide, or tin oxide), where the first TCO layer is sputter-deposited using a ceramic sputtering target(s) and the second TCO layer of the same material is sputter-deposited using a metallic or substantially metallic sputtering target(s). This allows the better quality TCO of the film, deposited more slowly via the ceramic target(s), to be formed using the ceramic target and the lesser quality TCO of the film to be deposited more quickly and cost effectively via the metallic target(s). After the etching, most or all of the better quality ceramic-deposited TCO remains whereas much of the lesser quality metallic-deposited TCO of the film was removed during the etching process.

摘要翻译： 本发明的某些示例性实施例涉及包括诸如前电极/触点的电极的光伏（PV）装置及其制造方法。 在某些示例性实施例中，前电极具有面向PV器件的光电半导体膜的有纹理（例如蚀刻）的表面。 前电极具有透明导电氧化物（TCO）膜，其具有相同材料（例如氧化锌，氧化锌铝，氧化铟锡或氧化锡）的第一和第二层（连续或不连续），其中第一 使用陶瓷溅射靶溅射沉积TCO层，并且使用金属或基本上金属的溅射靶溅射沉积相同材料的第二TCO层。 这允许通过使用陶瓷靶材形成的通过陶瓷靶材更缓慢地沉积的膜的更好的TCO，并且通过金属靶材（s）更快速且成本有效地沉积的膜的质量较差的TCO ）。 在蚀刻之后，大部分或全部较好质量的陶瓷沉积的TCO保留，而在蚀刻过程中除去较薄质量的金属沉积的TCO。

公开(公告)号：US20080308145A1

公开(公告)日：2008-12-18

申请号：US11808765

申请日：2007-06-12

申请人： Alexey Krasnov ,  Scott V. Thomsen ,  Yiwei Lu

发明人： Alexey Krasnov ,  Scott V. Thomsen ,  Yiwei Lu

IPC分类号： H01L31/02 ,  C03C15/00 ,  H01L31/20 ,  C23C14/08

CPC分类号： H01L31/022466 ,  H01L31/022483 ,  H01L31/068 ,  H01L31/1884 ,  Y02E10/547

摘要： Certain example embodiments of this invention relate to a front electrode provided on an etched/patterned front glass substrate for use in a photovoltaic device or the like. The glass is a low-iron soda-lime-silica based glass. Etching of the glass may include immersing the soda-lime-silica based glass in an acid inclusive solution such as hydrofluoric acid (e.g., HF in aqueous solution) and/or hydrofluoric acid with a buffer, in order to selectively dissolve some of the glass thereby producing at least one textured/patterned substantially transparent surface of the glass substrate. A front electrode (single or multi-layered) is then formed (e.g., via sputter-deposition) on the textured surface of the front glass substrate, and may be used in a photovoltaic device or the like.

摘要翻译： 本发明的一些示例性实施例涉及设置在用于光伏器件等的蚀刻/图案化的前玻璃基板上的前电极。 玻璃是一种低铁钠钙石英玻璃。 玻璃的蚀刻可以包括将钠钙二氧化硅基玻璃浸入包含酸的溶液如氢氟酸（例如在水溶液中的HF）和/或氢氟酸与缓冲液，以便选择性地溶解一些玻璃 从而产生至少一个纹理/图案化的玻璃基板的基本上透明的表面。 然后在前玻璃基板的纹理化表面上形成前电极（单层或多层）（例如，通过溅射沉积），并且可以用于光伏器件等中。

公开(公告)号：US20100089444A1

公开(公告)日：2010-04-15

申请号：US12285890

申请日：2008-10-15

申请人： Scott V. Thomsen ,  Yiwei Lu ,  Alexey Krasnov

发明人： Scott V. Thomsen ,  Yiwei Lu ,  Alexey Krasnov

IPC分类号： H01L31/00 ,  C23C14/00

CPC分类号： H01L31/1884 ,  H01L31/022466 ,  H01L31/0236 ,  Y02E10/50

摘要： Certain example embodiments of this invention relate to a photovoltaic (PV) device including an electrode such as a front electrode/contact, and a method of making the same. In certain example embodiments, the front electrode has a textured (e.g., etched) surface that faces the photovoltaic semiconductor film of the PV device. The front electrode has a transparent conductive oxide (TCO) film having first and second layers (continuous or discontinuous) of the same material (e.g., zinc oxide, zinc aluminum oxide, indium-tin-oxide, or tin oxide), where the first TCO layer is sputter-deposited using a ceramic sputtering target(s) and the second TCO layer of the same material is sputter-deposited using a metallic or substantially metallic sputtering target(s). This allows the better quality TCO of the film, deposited more slowly via the ceramic target(s), to be formed using the ceramic target and the lesser quality TCO of the film to be deposited more quickly and cost effectively via the metallic target(s). After the etching, most or all of the better quality ceramic-deposited TCO remains whereas much of the lesser quality metallic-deposited TCO of the film was removed during the etching process.

摘要翻译： 本发明的某些示例性实施例涉及包括诸如前电极/触点的电极的光伏（PV）装置及其制造方法。 在某些示例性实施例中，前电极具有面向PV器件的光电半导体膜的有纹理（例如蚀刻）的表面。 前电极具有透明导电氧化物（TCO）膜，其具有相同材料（例如氧化锌，氧化锌铝，氧化铟锡或氧化锡）的第一和第二层（连续或不连续），其中第一 使用陶瓷溅射靶溅射沉积TCO层，并且使用金属或基本上金属的溅射靶溅射沉积相同材料的第二TCO层。 这允许通过使用陶瓷靶材形成的通过陶瓷靶材更缓慢地沉积的膜的更好的质量TCO，并且通过金属靶材更快速且成本有效地沉积的膜的质量较差的TCO（s ）。 在蚀刻之后，大部分或全部较好质量的陶瓷沉积的TCO保留，而在蚀刻过程中除去较薄质量的金属沉积的TCO。

公开(公告)号：US20090126791A1

公开(公告)日：2009-05-21

申请号：US11984662

申请日：2007-11-20

申请人： Yiwei Lu ,  Willem den Boer ,  Alexey Krasnov

发明人： Yiwei Lu ,  Willem den Boer ,  Alexey Krasnov

IPC分类号： H01L31/028 ,  H01L31/0296 ,  H01L31/04

CPC分类号： H01L31/03762 ,  B32B17/10036 ,  B32B17/10174 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/0296 ,  H01L31/048 ,  Y02E10/548

摘要： Certain example embodiments of this invention relate to an electrode (e.g., front electrode) for use in a photovoltaic device or the like. In certain example embodiments, a transparent conductive oxide (TCO) of the front electrode for use in a photovoltaic device is of or includes titanium oxide doped with one or more of Nb, Zn and/or Al. Additional layers may also be provided in the front electrode in certain example embodiments. It has been found that the use of transparent conductive TiOx(:Nb) or TiZnOx(:Al and/or Nb), in a front electrode of a photovoltaic device, is advantageous in that such materials have a high refractive index (n) and have a higher transparency than conventional titanium suboxide (TiOx). Thus, the use of such materials in the context of a front electrode of a photovoltaic device reduces light reflection due to the high refractive index, and increases transmission into the active semiconductor film due to the higher transmission characteristics thereof, thereby improving the efficiency of the device.

摘要翻译： 本发明的某些示例性实施例涉及用于光伏器件等中的电极（例如，前电极）。 在某些示例性实施例中，用于光伏器件的前电极的透明导电氧化物（TCO）是或包括掺杂有Nb，Zn和/或Al中的一种或多种的氧化钛。 在某些示例性实施例中，也可以在前电极中设置附加层。 已经发现，在光伏器件的前电极中使用透明导电TiO x（：Nb）或TiZnO x（：Al和/或Nb）的优点在于，这样的材料具有高折射率（n）和 具有比常规的低氧化钛（TiOx）更高的透明度。 因此，在光电器件的前电极的上下文中使用这种材料减少了由于高折射率引起的光反射，并且由于其更高的透射特性而增加了到有源半导体膜的透射，从而提高了 设备。

公开(公告)号：US20100040892A1

公开(公告)日：2010-02-18

申请号：US12588677

申请日：2009-10-23

申请人： Alexey Krasnov ,  Yiwei Lu

发明人： Alexey Krasnov ,  Yiwei Lu

IPC分类号： B32B17/06

CPC分类号： C23C14/086 ,  C03C17/245 ,  C03C2217/216 ,  C03C2217/24 ,  C03C2218/154 ,  C04B35/453 ,  C04B2235/3217 ,  C04B2235/3284 ,  C04B2235/3291 ,  C04B2235/402 ,  C04B2235/408 ,  C04B2235/9653

摘要： A transparent conductive oxide (TCO) based film is formed on a substrate. The film may be formed by sputter-depositing, so as to include both a primary dopant (e.g., Al) and a co-dopant (e.g., Ag). The benefit of using the co-dopant in depositing the TCO inclusive film may be two-fold: (a) it may prevent or reduce self-compensation of the primary dopant by a more proper positioning of the Fermi level, and/or (b) it may promote declustering of the primary dopant, thereby freeing up space in the metal sublattice and permitting more primary dopant to create electrically active centers so as to improve conductivity of the film. Accordingly, the use of the co-dopant permits the primary dopant to be more effective in enhancing conductivity of the TCO inclusive film, without significantly sacrificing visible transmission characteristics. An example TCO in certain embodiments is ZnAlOx:Ag.

摘要翻译： 在基板上形成基于透明导电氧化物（TCO）的膜。 可以通过溅射沉积来形成膜，以便包括主要掺杂剂（例如Al）和共掺杂剂（例如Ag）。 使用共掺杂剂在沉积含TCO的膜中的益处可以是两重的：（a）它可以通过更适当的费米能级定位来防止或减少主要掺杂剂的自补偿，和/或（b ）可以促进主要掺杂剂的分解，从而释放金属亚晶格中的空间，并允许更多的主要掺杂剂产生电活性中心，以便提高膜的导电性。 因此，使用共掺杂剂允许主​​要掺杂剂在不显着牺牲可见透射特性的情况下更有效地增强包含TCO的膜的导电性。 某些实施方案中的实例TCO是ZnAlO x：Ag。

公开(公告)号：US07989072B2

公开(公告)日：2011-08-02

申请号：US12588677

申请日：2009-10-23

申请人： Alexey Krasnov ,  Yiwei Lu

发明人： Alexey Krasnov ,  Yiwei Lu

IPC分类号： B32B15/00 ,  B32B17/06

CPC分类号： C23C14/086 ,  C03C17/245 ,  C03C2217/216 ,  C03C2217/24 ,  C03C2218/154 ,  C04B35/453 ,  C04B2235/3217 ,  C04B2235/3284 ,  C04B2235/3291 ,  C04B2235/402 ,  C04B2235/408 ,  C04B2235/9653

摘要： A transparent conductive oxide (TCO) based film is formed on a substrate. The film may be formed by sputter-depositing, so as to include both a primary dopant (e.g., Al) and a co-dopant (e.g., Ag). The benefit of using the co-dopant in depositing the TCO inclusive film may be two-fold: (a) it may prevent or reduce self-compensation of the primary dopant by a more proper positioning of the Fermi level, and/or (b) it may promote declustering of the primary dopant, thereby freeing up space in the metal sublattice and permitting more primary dopant to create electrically active centers so as to improve conductivity of the film. Accordingly, the use of the co-dopant permits the primary dopant to be more effective in enhancing conductivity of the TCO inclusive film, without significantly sacrificing visible transmission characteristics. An example TCO in certain embodiments is ZnAlOx:Ag.

摘要翻译： 在基板上形成基于透明导电氧化物（TCO）的膜。 可以通过溅射沉积来形成膜，以便包括主要掺杂剂（例如Al）和共掺杂剂（例如Ag）。 使用共掺杂剂在沉积含TCO的膜中的益处可以是两重的：（a）它可以通过更适当的费米能级定位来防止或减少主要掺杂剂的自补偿，和/或（b ）可以促进主要掺杂剂的分解，从而释放金属亚晶格中的空间，并允许更多的主要掺杂剂产生电活性中心，以便提高膜的导电性。 因此，使用共掺杂剂允许主​​要掺杂剂在不显着牺牲可见透射特性的情况下更有效地增强包含TCO的膜的导电性。 某些实施方案中的实例TCO是ZnAlO x：Ag。

公开(公告)号：US07888594B2

公开(公告)日：2011-02-15

申请号：US11984662

申请日：2007-11-20

申请人： Yiwei Lu ,  Willem den Boer ,  Alexey Krasnov

发明人： Yiwei Lu ,  Willem den Boer ,  Alexey Krasnov

IPC分类号： H01L31/00

CPC分类号： H01L31/03762 ,  B32B17/10036 ,  B32B17/10174 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/0296 ,  H01L31/048 ,  Y02E10/548

摘要： Certain example embodiments of this invention relate to an electrode (e.g., front electrode) for use in a photovoltaic device or the like. In certain example embodiments, a transparent conductive oxide (TCO) of the front electrode for use in a photovoltaic device is of or includes titanium oxide doped with one or more of Nb, Zn and/or Al. Additional layers may also be provided in the front electrode in certain example embodiments. It has been found that the use of transparent conductive TiOx(:Nb) or TiZnOx(:Al and/or Nb), in a front electrode of a photovoltaic device, is advantageous in that such materials have a high refractive index (n) and have a higher transparency than conventional titanium suboxide (TiOx). Thus, the use of such materials in the context of a front electrode of a photovoltaic device reduces light reflection due to the high refractive index, and increases transmission into the active semiconductor film due to the higher transmission characteristics thereof, thereby improving the efficiency of the device.

摘要翻译： 本发明的某些示例性实施例涉及用于光伏器件等中的电极（例如，前电极）。 在某些示例性实施例中，用于光伏器件的前电极的透明导电氧化物（TCO）是或包括掺杂有Nb，Zn和/或Al中的一种或多种的氧化钛。 在某些示例性实施例中，也可以在前电极中设置附加层。 已经发现，在光伏器件的前电极中使用透明导电TiO x（：Nb）或TiZnO x（：Al和/或Nb）的优点在于，这样的材料具有高折射率（n）和 具有比常规的低氧化钛（TiOx）更高的透明度。 因此，在光电器件的前电极的上下文中使用这种材料减少了由于高折射率引起的光反射，并且由于其更高的透射特性而增加了到有源半导体膜的透射，从而提高了 设备。

公开(公告)号：US07628896B2

公开(公告)日：2009-12-08

申请号：US11173157

申请日：2005-07-05

申请人： Alexey Krasnov ,  Yiwei Lu

发明人： Alexey Krasnov ,  Yiwei Lu

IPC分类号： C23C14/00

CPC分类号： C23C14/086 ,  C03C17/245 ,  C03C2217/216 ,  C03C2217/24 ,  C03C2218/154 ,  C04B35/453 ,  C04B2235/3217 ,  C04B2235/3284 ,  C04B2235/3291 ,  C04B2235/402 ,  C04B2235/408 ,  C04B2235/9653

摘要： A transparent conductive oxide (TCO) based film is formed on a substrate. The film may be formed by sputter-depositing, so as to include both a primary dopant (e.g., Al) and a co-dopant (e.g., Ag). The benefit of using the co-dopant in depositing the TCO inclusive film may be two-fold: (a) it may prevent or reduce self-compensation of the primary dopant by a more proper positioning of the Fermi level, and/or (b) it may promote declustering of the primary dopant, thereby freeing up space in the metal sublattice and permitting more primary dopant to create electrically active centers so as to improve conductivity of the film. Accordingly, the use of the co-dopant permits the primary dopant to be more effective in enhancing conductivity of the TCO inclusive film, without significantly sacrificing visible transmission characteristics. An example TCO in certain embodiments is ZnAlOx:Ag.

摘要翻译： 在基板上形成基于透明导电氧化物（TCO）的膜。 可以通过溅射沉积来形成膜，以便包括主要掺杂剂（例如Al）和共掺杂剂（例如Ag）。 使用共掺杂剂在沉积含TCO的膜中的益处可以是两重的：（a）它可以通过更适当地定位费米能级来防止或减少主要掺杂剂的自补偿，和/或（b ）可以促进主要掺杂剂的分解，由此释放金属亚晶格中的空间，并允许更多的主要掺杂剂产生电活性中心，以便改善膜的导电性。 因此，使用共掺杂剂允许主​​要掺杂剂在不显着牺牲可见透射特性的情况下更有效地增强包含TCO的膜的导电性。 某些实施方案中的实例TCO是ZnAlO x：Ag。

公开(公告)号：US20080223430A1

公开(公告)日：2008-09-18

申请号：US11717787

申请日：2007-03-14

申请人： Alexey Krasnov ,  Yiwei Lu

发明人： Alexey Krasnov ,  Yiwei Lu

IPC分类号： H01L31/042 ,  C23C14/00

CPC分类号： H01L31/022425 ,  C03C17/347 ,  C03C17/3476 ,  C03C17/36 ,  C03C17/3678 ,  C03C2217/734 ,  C03C2217/944 ,  C03C2217/948 ,  C23C16/407 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/03762 ,  H01L31/056 ,  H01L31/073 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

摘要： Certain example embodiments of this invention relate to an electrode structure (e.g., front electrode structure) for use in a photovoltaic device or the like. In certain example embodiments, a buffer layer (e.g., of or including tin oxide) is provided between the front electrode and the semiconductor absorber film in a photovoltaic device. The buffer layer may be deposited via sputtering, and may or may not be doped in certain example instances. In an example context of use in CdS/CdTe photovoltaic devices, the buffer layer is advantageous in that it (one or more of): (a) provides a good work-function match to a possible CdS/CdTe film and the front electrode; (b) provides good durability in that it is better able to withstand attacks of sulfur vapors at elevated temperatures during possible CdS/CdTe processing; (c) may be at least partially conductive; and/or (d) provides good mechanical durability.

摘要翻译： 本发明的某些示例性实施例涉及用于光伏器件等的电极结构（例如，前电极结构）。 在某些示例性实施例中，在光电器件中的前电极和半导体吸收膜之间提供缓冲层（例如氧化锡或包含氧化锡）。 可以通过溅射沉积缓冲层，并且在某些示例中可以掺杂或可以不掺杂缓冲层。 在CdS / CdTe光电器件中使用的示例性上下文中，缓冲层的优点在于它（一种或多种）：（a）提供与可能的CdS / CdTe膜和前电极的良好的功函数匹配; （b）提供良好的耐久性，因为它可以在可能的CdS / CdTe处理过程中更好地抵抗升高的温度下硫磺蒸气的袭击; （c）可以至少部分导电; 和/或（d）提供良好的机械耐久性。

公开(公告)号：US20070029186A1

公开(公告)日：2007-02-08

申请号：US11194760

申请日：2005-08-02

申请人： Alexey Krasnov ,  Yiwei Lu ,  Philip Lingle

发明人： Alexey Krasnov ,  Yiwei Lu ,  Philip Lingle

IPC分类号： C23C14/00

CPC分类号： C03C17/3435 ,  C03C17/3423 ,  C03C2218/154

摘要： A method of making a coated article including a transparent conductive oxide (TCO) film supported by a glass substrate is provided. In certain embodiments, the coated article including the TCO film on the glass substrate is thermally tempered in a tempering furnace with an inorganic protective film (e.g., of or including silicon nitride) being provided on the glass substrate over the TCO film during tempering in order to prevent or reduce oxidizing of the TCO during the tempering process. Since oxidizing of the TCO film during the tempering process is prevented or reduced, the TCO film is able to maintain its electrically conductivity, even after tempering.

摘要翻译： 提供一种制造包括由玻璃基板支撑的透明导电氧化物（TCO）膜的涂布制品的方法。 在某些实施方案中，将包含玻璃基板上的TCO膜的涂覆制品在回火炉中进行回火，在回火期间在TCO膜上设置玻璃基板上的无机保护膜（例如，包括或包含氮化硅） 以防止或减少回火过程中TCO的氧化。 由于TCO膜在回火过程中的氧化被防止或减少，所以即使在回火之后，TCO膜也能够保持其导电性。