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    Curing Dielectric Films Under A Reducing Atmosphere
    1.
    发明申请
    Curing Dielectric Films Under A Reducing Atmosphere 审中-公开
    在降低气氛下固化介电薄膜

    公开(公告)号：US20070299239A1

    公开(公告)日：2007-12-27

    申请号：US11764485

    申请日：2007-06-18

    申请人： Scott Weigel ,  Mark O'Neill ,  Raymond Vrtis ,  Mary Haas ,  Eugene Karwacki

    发明人： Scott Weigel ,  Mark O'Neill ,  Raymond Vrtis ,  Mary Haas ,  Eugene Karwacki

    IPC分类号： C08G69/26

    CPC分类号： H01L21/31695 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351

    摘要： The present invention provides a process for forming a porous dielectric film, the process comprising: forming onto at least a portion of a substrate a composite film comprising Si, C, O, H and Si—CH3 groups, wherein the composite film comprises at least one silicon-containing structure-forming material and at least one carbon-containing pore-forming material; and exposing the composite film to an activated chemical species to at least partially modify the carbon-containing pore-forming material, wherein at least 90% of Si—CH3 species in the as deposited film remains in the film after the exposing step as determined by FTIR.

    摘要翻译： 本发明提供一种形成多孔电介质膜的方法，该方法包括：在基底的至少一部分上形成包含Si，C，O，H和Si-CH 3基团的复合膜 ，其中所述复合膜包含至少一种含硅结构形成材料和至少一种含碳成孔材料; 以及将所述复合膜暴露于活化的化学物质以至少部分地改变所述含碳成孔材料，其中所述沉积膜中至少90％的Si-CH 3类物质保留在 通过FTIR测定的暴露步骤后的膜。

    Porous low dielectric constant compositions and methods for making and using same
    2.
    发明申请
    Porous low dielectric constant compositions and methods for making and using same 有权
    多孔低介电常数组合物及其制备和使用方法

    公开(公告)号：US20060078676A1

    公开(公告)日：2006-04-13

    申请号：US11228223

    申请日：2005-09-19

    申请人： Aaron Lukas ,  Mark O'Neill ,  Eugene Karwacki ,  Raymond Vrtis ,  Jean Vincent

    发明人： Aaron Lukas ,  Mark O'Neill ,  Eugene Karwacki ,  Raymond Vrtis ,  Jean Vincent

    IPC分类号： C23C16/00 ,  B32B17/06 ,  B32B13/04 ,  B32B9/00 ,  B32B19/00

    CPC分类号： C03C3/045 ,  C23C16/30 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/3122 ,  H01L21/31695 ,  Y10T428/31663

    摘要： A porous organosilicate glass (OSG) film: SivOwCxHyFz, where v+w+x+y+z=100%, v is 10 to 35 atomic %, w is 10 to 65 atomic %, x is 5 to 30 atomic %, y is 10 to 50 atomic % and z is 0 to 15 atomic %, has a silicate network with carbon bonds as methyl groups (Si—CH3) and contains pores with diameter less than 3 nm equivalent spherical diameter and dielectric constant less than 2.7. A preliminary film is deposited by a chemical vapor deposition method from organosilane and/or organosiloxane precursors, and independent pore-forming precursors. Porogen precursors form pores within the preliminary film and are subsequently removed to provide the porous film. Compositions, film forming kits, include organosilane and/or organosiloxane compounds containing at least one Si—H bond and porogen precursors of hydrocarbons containing alcohol, ether, carbonyl, carboxylic acid, ester, nitro, primary amine, secondary amine, and/or tertiary amine functionality or combinations.

    摘要翻译： 多孔有机硅酸盐玻璃（OSG）膜：其中，X，Y，X，Y， 其中v + w + x + y + z = 100％，v为10〜35原子％，w为10〜65原子％，x为5〜30原子％，y为10〜 z为0〜15原子％，具有作为甲基（Si-CH 3 3）的碳原子的硅酸盐网络，并且含有直径小于3nm的等效球径，介电常数小于2.7的孔 。 通过化学气相沉积法从有机硅烷和/或有机硅氧烷前体和独立的成孔前体沉积初步膜。 致孔剂前体在预备膜内形成孔，随后被除去以提供多孔膜。 组合物，成膜试剂盒包括含有至少一个Si-H键的有机硅烷和/或有机硅氧烷化合物，以及含有醇，醚，羰基，羧酸，酯，硝基，伯胺，仲胺和/或叔碳原子的烃的致孔剂前体 胺官能团或组合。

    Method for removing a residue from a chamber
    3.
    发明申请
    Method for removing a residue from a chamber 审中-公开
    从室中除去残留物的方法

    公开(公告)号：US20060196525A1

    公开(公告)日：2006-09-07

    申请号：US11070994

    申请日：2005-03-03

    申请人： Raymond Vrtis ,  Aaron Lukas ,  Mark O'Neill ,  Mark Bitner ,  Xiaohai Xiang ,  Eugene Karwacki

    发明人： Raymond Vrtis ,  Aaron Lukas ,  Mark O'Neill ,  Mark Bitner ,  Xiaohai Xiang ,  Eugene Karwacki

    IPC分类号： B08B3/12

    CPC分类号： C23C16/4405

    摘要： A method for removing a residue from a surface is disclosed herein. In one aspect, the method includes: providing a chamber containing the surface coated with the residue; providing in the chamber a cleaning composition of an oxidizing gas and optionally an organic species; and irradiating the cleaning composition with ultraviolet light to remove the residue from the surface. The surface can be, for example, a window of a processing chamber. In certain aspects, a reflective surface can be located within close proximity to the window to enhance cleaning efficiency.

    摘要翻译： 本文公开了从表面除去残余物的方法。 一方面，该方法包括：提供包含涂有残留物的表面的室; 在室中提供氧化气体和任选的有机物质的清洁组合物; 并用紫外线照射清洗组合物以从表面除去残留物。 表面可以是例如处理室的窗口。 在某些方面，反射表面可以位于靠近窗口的位置，以提高清洁效率。