公开(公告)号：US08784975B2

公开(公告)日：2014-07-22

申请号：US13913817

申请日：2013-06-10

Applicant: Seagate Technology LLC

Inventor： Jun Zheng ,  Dadi Setiadi

IPC: B32B3/02

CPC classification number: B32B7/005 ,  B23K31/02 ,  H01L21/187 ,  H01L23/29 ,  H01L24/81 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05571 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16111 ,  H01L2224/16147 ,  H01L2224/81002 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81385 ,  H01L2224/81805 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01322 ,  Y10T428/24562 ,  Y10T428/24802 ,  Y10T428/24851 ,  Y10T428/24917 ,  Y10T428/31504 ,  Y10T428/31678 ,  H01L2224/81001 ,  H01L2224/05552

Abstract: A wafer article includes a substrate, two or more hydrophilic areas disposed on the substrate, hydrophobic areas surrounding the hydrophilic areas, and a eutectic bonding material disposed on the substrate. A wafer apparatus including two wafers having complimentary hydrophilic regions and eutectic bonding material is disclosed and a method of forming a bonded wafer articles is disclosed.

Abstract translation: 晶片制品包括衬底，设置在衬底上的两个或更多个亲水区域，围绕亲水区域的疏水区域以及设置在衬底上的共晶接合材料。 公开了包括具有互补的亲水区域和共晶接合材料的两个晶片的晶片装置，并且公开了形成接合晶片制品的方法。

公开(公告)号：US20130146963A1

公开(公告)日：2013-06-13

申请号：US13762704

申请日：2013-02-08

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Jun Zheng

IPC: H01L29/788

CPC classification number: H01L29/788 ,  H01L29/40114 ,  H01L29/42324 ,  H01L29/513 ,  H01L29/7881

Abstract: Methods of forming non-volatile memory is described. The non-volatile memory includes a substrate having a source region, a drain region and a channel region. The channel region separates the source region and the drain region. An electrically insulating layer is adjacent to the source region, drain region and channel region. A floating gate electrode is adjacent to the electrically insulating layer. The electrically insulating layer separates the floating gate electrode from the channel region. The floating gate electrode has a floating gate major surface. A control gate electrode has a control gate major surface and the control gate major surface opposes the floating gate major surface. A vacuum layer or gas layer at least partially separates the control gate major surface from the floating gate major surface.

Abstract translation: 描述形成非易失性存储器的方法。 非易失性存储器包括具有源极区，漏极区和沟道区的衬底。 沟道区域分离源极区域和漏极区域。 电绝缘层与源极区，漏极区和沟道区相邻。 浮栅电极与电绝缘层相邻。 电绝缘层将浮栅电极与沟道区分开。 浮栅电极具有浮栅主表面。 控制栅电极具有控制栅主表面，控制栅极主表面与浮栅主表面相对。 真空层或气体层至少部分地将控制栅极主表面与浮动栅极主表面分开。