摘要:
In the preliminary authentication stage, the mobile station (35) is authenticated by sending from the home network (30) to the roamed network (31), a plurality of pairs of first random numbers (RNDa.sub.1, . . . , RNDa.sub.n) and calculation results (SRESa.sub.1, . . . , SRESa.sub.n) of the cipher function (f), which calculation is performed at the home network using the secret key (ki) and the first random numbers (RNDa.sub.1, . . . , RND.sub.an), by sending, from the roamed network to the mobile station, third random numbers formed by coupling second random numbers (RNDb.sub.1, . . . , RNDb.sub.m) produced at the roamed network with the first random numbers (RNDa.sub.1, . . . , RNDan), by sending, from the mobile station to the roamed network, calculation results (SRESa.sub.1, . . . , SRESa.sub.n, SRESb.sub.1, . . . , SRESb.sub.m)) of the cipher function (f), which calculation is performed at the mobile station using the secret key (ki) and the sent third random numbers, and by confirming, at the roamed network, coincidence of the calculation results (SRESa.sub.1, . . . , SRESa.sub.n) sent from the mobile station with the calculation results (SRESa.sub.1, . . . , SRESa.sub.n) sent from the home network. In the main authentication, the mobile station is authenticated by using a pair of the second random number (RNDb.sub.1, . . . , RNDb.sub.m) and of the calculation result (SRESb.sub.1, . . . , SRESb.sub.m) with respect to the second random number (RNDb.sub.1, . . . , RNDb.sub.m), sent from the mobile station.
摘要:
A communication system includes a bidirectional tree network having a base end and a plurality of terminating ends, a central apparatus connected to the base end, a plurality of terminating equipment connected respectively to the terminating ends, and a plurality of subscriber terminals accommodated respectively in the terminating equipment. Each of the terminating equipment has a multiplexer for multiplexing information transmitted from the subscriber terminal accommodated therein to the central equipment, and a signal selection device for discriminating and selectively receiving only information which is destined for the subscriber terminal accommodated in this terminating equipment from information transmitted from the central apparatus to all the subscriber terminals via the tree network. The central apparatus has an exchange equipment for discriminating destination of information transmitted from the subscriber terminals via the tree network, and a loop back device for scrambling the information transmitted from the subscriber terminals via the tree network so that the scrambled signal can be decoded only by a signal selection device corresponding to the discriminated destination and for sending back the scrambled information to the tree network.
摘要:
The radio communication system has at least one first radio station such as a base station and a plurality of second radio stations such as mobile stations. The base station at least possesses a public key, and each of the mobile stations possesses a public-key cryptography function for using the public key and an identity itself. An identity confidentiality method includes steps of generating a time-varying public key at the base station based upon a predetermined time initial, and repeatedly broadcasting, from the base station, the generated time-varying public key to all the mobile stations. The mobile stations cipher their respective identities with the broadcasted time-varying public key so that the encrypted/identities of the mobile stations, which are sent to the base station, remain confidential. After enciphering their identity, the mobile stations wait to be called. When a mobile station is to be called, the base station enciphers the mobile station's identity with the time-varying public key and pages the enciphered identity to all mobile stations.
摘要:
A solid-state imaging device includes a plurality of pixels, each pixel including a photoelectric conversion unit, an amplifying transistor, and a reset transistor. The photoelectric conversion unit is arranged in a well of a first conductivity type on a semiconductor substrate. A source or drain region of the amplifying transistor or the reset transistor is arranged between the photoelectric conversion unit of a first pixel and the photoelectric conversion unit of a second pixel adjacent to the first pixel. In the first pixel, a first semiconductor region of an impurity concentration higher than that of the well of the first conductivity type is arranged between the source or drain region and the photoelectric conversion unit, and a second semiconductor region of the first conductivity type is arranged under the first semiconductor region.
摘要:
A solid-state imaging device includes a plurality of pixels, each pixel including a photoelectric conversion unit, an amplifying transistor, and a reset transistor. The photoelectric conversion unit is arranged in a well of a first conductivity type on a semiconductor substrate. A source or drain region of the amplifying transistor or the reset transistor is arranged between the photoelectric conversion unit of a first pixel and the photoelectric conversion unit of a second pixel adjacent to the first pixel. In the first pixel, a first semiconductor region of an impurity concentration higher than that of the well of the first conductivity type is arranged between the source or drain region and the photoelectric conversion unit, and a second semiconductor region of the first conductivity type is arranged under the first semiconductor region.
摘要:
An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes 101A and 101B, plural transfer MOSFETs 102A and 102B arranged corresponding to the plural photodiodes, respectively, and a common MOSFET 104 which amplifies and outputs signals read from the plural photodiodes. Each pair within the unit cell, composed of the photodiode and the transfer MOSFET provided corresponding to the photodiode, has translational symmetry with respect to one another. Within the unit cell, there are included a reset MOSFET and selecting MOSFET.
摘要:
The present invention uses an image pickup device comprising a plurality of pixels respectively including a photoelectric conversion unit for converting incoming light into a signal charge, an amplifying unit for amplifying the signal charge generated by the photoelectric conversion unit and a transfer unit for transferring the signal charge from the photoelectric conversion unit to the amplifying unit, in which the photoelectric conversion unit is formed of a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region and a second-conductivity-type third semiconductor region is formed on at least a part of the gap between a photoelectric conversion unit of a first pixel and a photoelectric conversion unit of a second pixel adjacent to the first pixel, a first-conductivity-type fourth semiconductor region having an impurity concentration higher than that of the first semiconductor region is formed between the photoelectric conversion unit and the third semiconductor region and a first-conductivity-type fifth semiconductor region formed at a position deeper than the fourth semiconductor region and having an impurity concentration higher than that of the first semiconductor region is included between the photoelectric conversion unit and the third semiconductor region.
摘要:
An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes 101A and 101B, plural transfer MOSFETs 102A and 102B arranged corresponding to the plural photodiodes, respectively, and a common MOSFET 104 which amplifies and outputs signals read from the plural photodiodes. Each pair within the unit cell, composed of the photodiode and the transfer MOSFET provided corresponding to the photodiode, has translational symmetry with respect to one another. Within the unit cell, there are included a reset MOSFET and selecting MOSFET.
摘要:
To provide a solid-state image pickup apparatus with little or no difference in the dark currents between adjacent photoelectric conversion elements and providing a high sensitivity and a low dark current even in a high-speed readout operation.A well 302 is formed on a wafer 301, and semiconductor layers 101a, 101b are formed in the well to constitute photodiodes. A well contact 306 is formed between the semiconductor layers 101a, 101b. Element isolation regions 303b, 303a are provided between the well contact and the semiconductor layers, and channel stop layers 307b, 307a are provided under the element isolation regions 303b, 303a. A conductive layer 304 is provided on the element isolation region 303b, and a side wall 308 is provided on a side face of the conductive layer 304. A distance a between an end of the element isolation region 303b and the conductive layer 304, a width b of the side wall 308 and a device isolation width c satisfy a relation c>a≧b.
摘要:
A solid-state image pickup apparatus with little or no difference in the dark currents between adjacent photoelectric conversion elements and providing a high sensitivity and a low dark current even in a high-speed readout operation.A well 302 is formed on a wafer 301, and semiconductor layers 101a, 101b are formed in the well to constitute photodiodes. A well contact 306 is formed between the semiconductor layers 101a, 101b. Element isolation regions 303b, 303a are provided between the well contact and the semiconductor layers, and channel stop layers 307b, 307a are provided under the element isolation regions 303b, 303a. A conductive layer 304 is provided on the element isolation region 303b, and a side wall 308 is provided on a side face of the conductive layer 304. A distance a between an end of the element isolation region 303b and the conductive layer 304, a width b of the side wall 308 and a device isolation width c satisfy a relation c>a≧b.
摘要翻译:一种即使在高速读出操作中,相邻的光电转换元件之间的暗电流几乎没有或没有差异并且提供高灵敏度和低暗电流的固态图像拾取装置。 阱302形成在晶片301上,半导体层101a,101b形成在阱中以构成光电二极管。 在半导体层101a,101b之间形成阱接触306。 元件隔离区域303b,303a设置在阱接触件和半导体层之间,并且通道阻挡层307b,307a设置在元件隔离区域303b,303a的下方。 导电层304设置在元件隔离区域303b上,侧壁308设置在导电层304的侧面上。元件隔离区域303b的一端与导电层304之间的距离a,宽度 侧壁308的b和设备隔离宽度c满足关系c> a> = b。