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公开(公告)号:USD270809S
公开(公告)日:1983-10-04
申请号:US190044
申请日:1980-09-23
申请人: Seiji Ikeda , Katsuyuki Ono
设计人: Seiji Ikeda , Katsuyuki Ono
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公开(公告)号:US4467676A
公开(公告)日:1984-08-28
申请号:US397928
申请日:1982-07-13
申请人: Seiji Ikeda , Katsuyuki Ono , Shozo Matsumura
发明人: Seiji Ikeda , Katsuyuki Ono , Shozo Matsumura
CPC分类号: B25F5/026 , B25B21/001 , B25B21/002
摘要: A bolt tightening device comprising a main body including a tubular case and a cylindrical housing attached to the base end of the tubular case approximately at a right angle therewith, the case being provided with an outer socket for a nut to fit in and an inner socket for fitting the tip of a bolt therein, a main handle fixed to the main body, and an auxiliary handle attached to the main body and having a grip approximately parallel to the cylindrical housing. The auxiliary handle is withdrawable from the housing toward the sockets and detachably engageable with positioning portions provided in or on the main body to clamp the main body when in a withdrawn position and in a pushed-in position.
摘要翻译: 一种螺栓紧固装置,包括主体,该主体包括管状壳体和与所述管状壳体的基端大致直角连接的圆柱形壳体,所述壳体设置有用于安装螺母的外部插座和内部插座 用于将螺栓的尖端装配在其中,固定到主体的主手柄和附接到主体并具有大致平行于圆柱形壳体的手柄的辅助手柄。 辅助手柄可从壳体朝向插座抽出,并可与设置在主体中或主体上的定位部分可拆卸地接合,以在处于撤回位置并处于推入位置时夹紧主体。
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公开(公告)号:US4403529A
公开(公告)日:1983-09-13
申请号:US294234
申请日:1981-08-19
申请人: Seiji Ikeda , Katsuyuki Ono
发明人: Seiji Ikeda , Katsuyuki Ono
CPC分类号: B25B23/1415
摘要: A device for fastening a bolt having a tip to be sheared therefrom comprises an outer socket engageable with a nut on the bolt, an inner socket engageable with the tip and retractably disposed in the outer socket, and stoppers provided between the inner socket and the outer socket for preventing the inner socket from retraction. When the tip is properly fitted into the inner socket, the stoppers are disengaged to permit the retraction of the inner socket and render the nut fittable in the outer socket.
摘要翻译: 用于紧固具有待剪切的尖端的螺栓的装置包括可与螺栓上的螺母接合的外部插座,可与顶端接合并可缩回地设置在外部插座中的内部插座,以及设置在内部插座和外部插座之间的止动器 插座用于防止内部插座退回。 当尖端正确地装配到内部插座中时,止动器脱开以允许内部插座的缩回并使螺母可装配在外部插座中。
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公开(公告)号:US08664117B2
公开(公告)日:2014-03-04
申请号:US13582536
申请日:2011-03-04
申请人: Katsuyuki Ono , Yusuke Hirayama , Hideyuki Hatoh
发明人: Katsuyuki Ono , Yusuke Hirayama , Hideyuki Hatoh
IPC分类号: H01L21/44
CPC分类号: H01L23/5226 , H01L21/31138 , H01L21/76831 , H01L21/76898 , H01L23/485 , H01L2924/0002 , H01L2924/00
摘要: Provided is a semiconductor device manufacturing method enabling miniaturization by forming a hole in a vertical shape, capable of reducing the number of processes as compared to conventional methods, and capable of increasing productivity. The semiconductor device manufacturing method includes: forming a hole in a substrate; forming a polyimide film within the hole; anisotropically etching the substrate without using a mask covering a sidewall portion of the polyimide film within the hole and removing at least a part of a bottom portion of the polyimide film within the hole while the sidewall portion of the polyimide film remains within the hole; and filling the hole with a conductive metal.
摘要翻译: 提供了一种通过形成垂直形状的孔来实现小型化的半导体器件制造方法,其能够与常规方法相比能够减少工艺数量并且能够提高生产率。 半导体器件制造方法包括:在衬底中形成孔; 在孔内形成聚酰亚胺膜; 各向异性地蚀刻基板,而不使用覆盖孔内的聚酰亚胺膜的侧壁部分的掩模,并且在聚酰亚胺膜的侧壁部分保留在孔内时,去除孔内的聚酰亚胺膜的底部的至少一部分; 并用导电金属填充孔。
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公开(公告)号:USD478537S1
公开(公告)日:2003-08-19
申请号:US29164189
申请日:2002-07-22
申请人: Katsuyuki Ono
设计人: Katsuyuki Ono
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公开(公告)号:US20130052821A1
公开(公告)日:2013-02-28
申请号:US13582536
申请日:2011-03-04
申请人: Katsuyuki Ono , Yusuke Hirayama , Hideyuki Hatoh
发明人: Katsuyuki Ono , Yusuke Hirayama , Hideyuki Hatoh
IPC分类号: H01L21/768 , H01L21/311
CPC分类号: H01L23/5226 , H01L21/31138 , H01L21/76831 , H01L21/76898 , H01L23/485 , H01L2924/0002 , H01L2924/00
摘要: Provided is a semiconductor device manufacturing method enabling miniaturization by forming a hole in a vertical shape, capable of reducing the number of processes as compared to conventional methods, and capable of increasing productivity. The semiconductor device manufacturing method includes: forming a hole in a substrate; forming a polyimide film within the hole; isotropically etching the substrate without using a mask covering a sidewall portion of the polyimide film within the hole and removing at least a part of a bottom portion of the polyimide film within the hole while the sidewall portion of the polyimide film remains within the hole; and filling the hole with a conductive metal.
摘要翻译: 提供了一种通过形成垂直形状的孔来实现小型化的半导体器件制造方法,其能够与常规方法相比能够减少工艺数量并且能够提高生产率。 半导体器件制造方法包括:在衬底中形成孔; 在孔内形成聚酰亚胺膜; 在不使用覆盖孔内的聚酰亚胺膜的侧壁部分的掩模的同时蚀刻基板,并且在聚酰亚胺膜的侧壁部分保留在孔内的同时去除孔内的聚酰亚胺膜的底部的至少一部分; 并用导电金属填充孔。
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公开(公告)号:US08654991B2
公开(公告)日:2014-02-18
申请号:US12795158
申请日:2010-06-07
申请人: Katsuyuki Ono , Akinobu Kawamura
发明人: Katsuyuki Ono , Akinobu Kawamura
CPC分类号: H03F3/45475 , H03F1/0261 , H03F3/45183 , H03F2200/03 , H03F2203/45528 , H03F2203/45536 , H03F2203/45544 , H03F2203/45548 , H03F2203/45561 , H03F2203/45594 , H03F2203/45596 , H03F2203/45618 , H03F2203/45622
摘要: An inverting amplifier which drives headphones via an output capacitor includes: an operational amplifier, an input resistor having a first terminal via which an audio signal to be amplified is received, and a second terminal connected to an inverting input terminal of the operational amplifier; and a feedback resistor having a first terminal connected to an inverting input terminal of the operational amplifier, and a second terminal connected to the output terminal. A reference voltage source generates a bias voltage Vb, and supplies it to the non-inverting input terminal. A discharging path includes a discharging resistor and a first switch arranged in series between an output terminal of the reference voltage source and an fixed voltage terminal. A second switch is arranged between the output terminal of the operational amplifier and a node on the discharging path where the electric potential is higher than it is at the discharging resistor.
摘要翻译: 通过输出电容器驱动耳机的反相放大器包括:运算放大器,具有接收要放大的音频信号的第一端子的输入电阻器和连接到运算放大器的反相输入端子的第二端子; 以及反馈电阻器,其具有连接到运算放大器的反相输入端子的第一端子和连接到输出端子的第二端子。 参考电压源产生偏置电压Vb,并将其提供给非反相输入端。 放电路径包括放电电阻器和串联布置在参考电压源的输出端子和固定电压端子之间的第一开关。 第二开关设置在运算放大器的输出端子和放电路径上的电位高于放电电阻器处的节点之间。
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公开(公告)号:US20090314065A1
公开(公告)日:2009-12-24
申请号:US12441608
申请日:2008-05-08
申请人: Tomofumi Kiyomoto , Muneo Harada , Katsuyuki Ono
发明人: Tomofumi Kiyomoto , Muneo Harada , Katsuyuki Ono
CPC分类号: G01N30/6095 , G01N30/6004
摘要: A chromatography detector 11 includes a base substrate having a main surface 12a and a column flow path 15 formed on the main surface 12a, and a substrate block 13 and 14, which has a detection space 18 communicating with an outlet of the column flow path 15 and is stacked on the main surface 12a of the base substrate 12 so as to close a top surface of the column flow path 15.
摘要翻译: 色谱检测器11包括具有形成在主表面12a上的主表面12a和柱流路15的基底基板和具有与柱流路15的出口连通的检测空间18的基板块13和14 并且堆叠在基底基板12的主表面12a上,以封闭柱流路15的顶面。
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公开(公告)号:US20090022946A1
公开(公告)日:2009-01-22
申请号:US12223765
申请日:2007-02-08
申请人: Masato Hayashi , Msanori Yamaguchi , Yohei Yamada , Jun Murase , Katsuyuki Ono , Naoyuki Satoh
发明人: Masato Hayashi , Msanori Yamaguchi , Yohei Yamada , Jun Murase , Katsuyuki Ono , Naoyuki Satoh
CPC分类号: B81C1/00682 , B81B2201/0292 , B81B2203/0127 , B81C1/00158 , G03F1/20 , H01J5/18 , Y10T428/24174
摘要: The present invention provides a membrane structure having favorable pressure resistance and a manufacturing method of the same. After forming an opening (21a) on a substrate (21) by Deep Digging Reactive Ion Etching (DRIE), vertical streak formed by DRIE on the side face (inner peripheral face) of the opening (21a) is removed by performing light etching with an alkali etchant. The level of overhang of an overhanging section (21b) formed when forming an opening (22a) of a BOX layer (22) is suppressed by suppressing the overetching level when forming the BOX layer (22) by etching.
摘要翻译: 本发明提供具有良好耐压性的膜结构及其制造方法。 在通过深挖反应离子蚀刻(DRIE)在基板(21)上形成开口(21a)之后,通过对开口21a的侧面(内周面)形成的由DRIE形成的垂直条纹,通过用 碱蚀刻剂。 当通过蚀刻形成BOX层(22)时,通过抑制过蚀刻水平来抑制在形成BOX层(22)的开口(22a)时形成的悬垂部分(21b)的悬垂度。
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