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1.发明授权Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition 有权具有这种化学放大抗蚀剂组合物的半导体集成电路器件的化学放大抗蚀剂组合物和制造方法公开(公告)号：US07534554B2
公开(公告)日：2009-05-19
申请号：US12128039
申请日：2008-05-28
申请人： Seiji Nagahara , Satoshi Watanabe , Kazunori Maeda
发明人： Seiji Nagahara , Satoshi Watanabe , Kazunori Maeda
CPC分类号： G03F7/0045 , G03F7/0392 , Y10S430/115 , Y10S430/12 , Y10S430/122
摘要： With the damascene process in which an interconnection is formed using a conventional chemically amplified positive photoresist composition, there arises a problem that the photoresist within the via hole (as well as in its vicinity) may remain even after the exposure and the development are carried out. The present invention relates to a chemically amplified resist composition comprising, at least, a photo acid generator, a quencher and a salt having a buffering function for an acid which is generated from the acid generator by irradiation, wherein the salt having the buffering function for the acid generated from the acid generator is a salt derived from a long chain alkylbenzenesulfonic acid or a long chain alkoxybenzenesulfonic acid and an organic amine that is a basic compound.
摘要翻译： 在使用常规的化学放大型正性光致抗蚀剂组合物形成互连的镶嵌工艺的情况下，存在即使在曝光和显影进行之后，通孔（以及其附近）内的光致抗蚀剂也可能保留的问题 。 本发明涉及一种化学放大抗蚀剂组合物，其至少包含光酸产生剂，猝灭剂和具有由酸产生剂通过照射产生的酸的缓冲功能的盐，其中具有缓冲功能的盐 由酸产生剂产生的酸是衍生自长链烷基苯磺酸或长链烷氧基苯磺酸的盐和作为碱性化合物的有机胺。
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2.发明申请CHEMICALLY AMPLIFIED RESIST COMPOSITION AND MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH SUCH CHEMICALLY AMPLIFIED RESIST COMPOSITION 有权具有这种化学放大电阻组成的半导体集成电路装置的化学放大电阻组合物和制造方法公开(公告)号：US20080233518A1
公开(公告)日：2008-09-25
申请号：US12128039
申请日：2008-05-28
申请人： Seiji Nagahara , Satoshi Watanabe , Kazunori Maeda
发明人： Seiji Nagahara , Satoshi Watanabe , Kazunori Maeda
CPC分类号： G03F7/0045 , G03F7/0392 , Y10S430/115 , Y10S430/12 , Y10S430/122
摘要： With the damascene process in which an interconnection is formed using a conventional chemically amplified positive photoresist composition, there arises a problem that the photoresist within the via hole (as well as in its vicinity) may remain even after the exposure and the development are carried out. The present invention relates to a chemically amplified resist composition comprising, at least, a photo acid generator, a quencher and a salt having a buffering function for an acid which is generated from the acid generator by irradiation, wherein the salt having the buffering function for the acid generated from the acid generator is a salt derived from a long chain alkylbenzenesulfonic acid or a long chain alkoxybenzenesulfonic acid and an organic amine that is a basic compound.
摘要翻译： 在使用常规的化学放大型正性光致抗蚀剂组合物形成互连的镶嵌工艺的情况下，存在即使在曝光和显影进行之后，通孔（以及其附近）内的光致抗蚀剂也可能保留的问题 。 本发明涉及一种化学放大抗蚀剂组合物，其至少包含光酸产生剂，猝灭剂和具有由酸产生剂通过照射产生的酸的缓冲功能的盐，其中具有缓冲功能的盐 由酸产生剂产生的酸是衍生自长链烷基苯磺酸或长链烷氧基苯磺酸的盐和作为碱性化合物的有机胺。
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3.发明授权Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition 有权具有这种化学放大抗蚀剂组合物的半导体集成电路器件的化学放大抗蚀剂组合物和制造方法公开(公告)号：US07396633B2
公开(公告)日：2008-07-08
申请号：US10873475
申请日：2004-06-23
申请人： Seiji Nagahara , Satoshi Watanabe , Kazunori Maeda
发明人： Seiji Nagahara , Satoshi Watanabe , Kazunori Maeda
CPC分类号： G03F7/0045 , G03F7/0392 , Y10S430/115 , Y10S430/12 , Y10S430/122
摘要： With the damascene process in which an interconnection is formed using a conventional chemically amplified positive photoresist composition, there arises a problem that the photoresist within the via hole (as well as in its vicinity) may remain even after the exposure and the development are carried out. The present invention relates to a chemically amplified resist composition comprising, at least, a photo acid generator, a quencher and a salt having a buffering function for an acid which is generated from the acid generator by irradiation, wherein the salt having the buffering function for the acid generated from the acid generator is a salt derived from a long chain alkylbenzenesulfonic acid or a long chain alkoxybenzenesulfonic acid and an organic amine that is a basic compound.
摘要翻译： 在使用常规的化学放大型正性光致抗蚀剂组合物形成互连的镶嵌工艺的情况下，存在即使在曝光和显影进行之后，通孔（以及其附近）内的光致抗蚀剂也可能保留的问题 。 本发明涉及一种化学放大抗蚀剂组合物，其至少包含光酸产生剂，猝灭剂和具有由酸产生剂通过照射产生的酸的缓冲功能的盐，其中具有缓冲功能的盐 由酸产生剂产生的酸是衍生自长链烷基苯磺酸或长链烷氧基苯磺酸的盐和作为碱性化合物的有机胺。
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公开(公告)号：US20060152695A1
公开(公告)日：2006-07-13
申请号：US11324290
申请日：2006-01-04
申请人： Seiji Nagahara
发明人： Seiji Nagahara
IPC分类号： G03B27/52
CPC分类号： B01D53/75 , B01D53/185 , B01D53/42 , B01D53/44 , B01D53/60 , B01D2251/404 , B01D2251/604 , B01D2253/102 , B01D2255/20707 , B01D2255/802 , B01D2257/302 , B01D2257/404 , B01D2259/804 , G03F7/70866 , G03F7/70916 , G03F7/70933
摘要： The exposure apparatus of the invention includes a chamber 1 housing an exposure apparatus body 6 provided with an illumination optical system 2, a reticle 3, a projection lens 4 and a stage 5, gas supply units 7, 13, 17 and 18 that are disposed in the chamber 1 and supply gas taken in from the outside of the chamber 1 to the vicinities of the reticle 3 and stage 5 and a wet filter 10 which is disposed in the vicinity of a gas intake 8 from which the gas is supplied to the gas supply units 7, 13, 17 and 18 and forms a water film through which the gas passes.
摘要翻译： 本发明的曝光装置包括容纳设置有照明光学系统2，标线片3，投影透镜4和台5的曝光装置主体6的室1，气体供给单元7,13,17和18， 在室1中并将从室1的外部吸入的气体分配到标线片3和阶段5的附近;以及湿式过滤器10，其设置在气体供给到气体入口8的附近 气体供应单元7,13,17和18，并形成气体通过的水膜。
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5.发明授权Method of forming wiring structure by using photo resist having optimum development rate 失效通过使用具有最佳显影速率的光致抗蚀剂形成布线结构的方法公开(公告)号：US06774028B2
公开(公告)日：2004-08-10
申请号：US10166362
申请日：2002-06-11
申请人： Seiji Nagahara
发明人： Seiji Nagahara
IPC分类号： H01L214763
CPC分类号： H01L21/76808 , H01L21/31144 , H01L21/76807 , H01L2221/1036
摘要： A multi-layer wiring structure is formed by using a dual damascene method. First and second interlayer insulating films formed on a lower conductor layer are etched by using a first photo resist film as a mask to form a via hole. An anti-reflective coating is formed on the second interlayer insulating film such that a portion of the via hole is also filled therewith. A second photo resist film is formed on the anti-reflective coating such that a remaining portion of the via hole is also filled therewith. A development rate of an exposed portion of the second photo resist film is selected to be 250-700 nm/second. A wiring trench pattern is formed in the second photo resist film, and the anti-reflective coating and the second interlayer insulating film is etched by using the second photo resist film as a mask to form a wiring trench. The via hole and the wiring trench are filled with a conductive material to form a via and a wiring conductor.
摘要翻译： 通过使用双镶嵌法形成多层布线结构。 通过使用第一光致抗蚀剂膜作为掩模来蚀刻形成在下导体层上的第一和第二层间绝缘膜以形成通孔。 在第二层间绝缘膜上形成防反射涂层，使得通孔的一部分也被填充。 在抗反射涂层上形成第二光致抗蚀剂膜，使得通孔的剩余部分也被填充。 第二光致抗蚀剂膜的曝光部分的显影速率选择为250-700nm /秒。 在第二光致抗蚀剂膜中形成布线沟槽图案，并且通过使用第二光致抗蚀剂膜作为掩模来蚀刻抗反射涂层和第二层间绝缘膜，以形成布线沟槽。 通孔和布线沟槽填充有导电材料以形成通孔和布线导体。
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6.发明授权Chemical amplification type photoresist composition, method for producing a semiconductor device using the composition, and semiconductor substrate 有权化学放大型光致抗蚀剂组合物，使用该组合物的半导体器件的制造方法以及半导体衬底公开(公告)号：US06800551B2
公开(公告)日：2004-10-05
申请号：US10308115
申请日：2002-12-03
IPC分类号： H01L214763
CPC分类号： H01L21/02203 , G03F7/0045 , G03F7/0392 , H01L21/0274 , H01L21/312 , H01L21/76808 , H01L21/76814 , H01L21/76828 , H01L2221/1036 , Y10S438/949
摘要： To provide a chemical amplification type positive photoresist composition suited to resist patterning of a substrate presenting surface step differences, a method for manufacturing the semiconductor device employing this composition, and a semiconductor substrate. In a method for manufacturing a semiconductor device, a resist film is formed using a chemical amplification type positive photoresist composition, comprised of a base resin and a basic compound added to the base resin at a rate of 1 to 100 mmol to 100 g of the base resin, on a substrate halving surface step differences and into which the organic removing solution is deposited or oozed, and a predetermined area of the resist film is exposed to light to form a resist pattern.
摘要翻译： 为了提供一种适用于抗蚀剂图案化的化学放大型正性光致抗蚀剂组合物，呈现表面的阶梯差，使用该组合物制造半导体器件的方法以及半导体衬底。 在制造半导体器件的方法中，使用化学放大型正性光致抗蚀剂组合物形成抗蚀剂膜，该组合物由基础树脂和添加到基础树脂中的碱性化合物以1至100mmol至100g的 在基板半部分表面上的步骤差异，并且将有机去除溶液沉积或渗出到其中，并且将抗蚀剂膜的预定区域曝光以形成抗蚀剂图案。
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公开(公告)号：US08397182B2
公开(公告)日：2013-03-12
申请号：US12457105
申请日：2009-06-01
申请人： Seiji Nagahara
发明人： Seiji Nagahara
IPC分类号： G06F17/50
CPC分类号： G03F7/70475 , G03F1/36 , G03F1/70 , H01L22/12
摘要： An overlapping margin of a second pattern for a first pattern is corrected for at least one of the first pattern and the second pattern (S50). Next, a relative distance between the first pattern and the second pattern after the overlapping margin is corrected is calculated (S60). Next, it is determined whether or not the relative distance satisfies a criterion (S70). Thus, the pattern can be verified under the consideration of the overlapping margin.
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公开(公告)号：US07217654B2
公开(公告)日：2007-05-15
申请号：US10969429
申请日：2004-10-21
IPC分类号： H01L21/4763
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/31138 , H01L21/76807 , H01L21/76808 , H01L21/76811 , H01L21/76825 , H01L21/76828 , H01L21/76831
摘要： A method of manufacturing a semiconductor device having a damascene structure contains a process of forming a first interlayer insulating film (6) and a second interlayer insulating film (4) formed of a low dielectric-constant film on a substrate, forming via holes (9) by using a first resist pattern (1a) formed on the second interlayer insulating film, conducting an organic peeling treatment using organic peeling liquid containing amine components and then forming a second resist pattern (1b) on the second interlayer insulating film. After the wet treatment, before a second antireflection coating (2b) is coated so as to be located below the second resist pattern is coated, at least one of an annealing treatment, a plasma treatment, a UV treatment and an organic solvent treatment is carried out to remove amine components which inhibit the catalysis reaction of acid occurring in the resist at the light exposure, thereby preventing degradation of the resolution of the second resist pattern (1b).
摘要翻译： 一种制造具有镶嵌结构的半导体器件的方法包括在衬底上形成第一层间绝缘膜（6）和由低介电常数膜形成的第二层间绝缘膜（4）的工艺，形成通孔（9 ）通过使用形成在第二层间绝缘膜上的第一抗蚀剂图案（1a），使用含有胺成分的有机剥离液进行有机剥离处理，然后在第二层间绝缘膜上形成第二抗蚀剂图案（1b）。 在湿处理之后，涂覆第二抗反射涂层（2b）以便位于第二抗蚀图案下方的涂层，退火处理，等离子体处理，UV处理和有机溶剂处理中的至少一个是 进行以除去抑制在曝光时在抗蚀剂中发生的酸的催化反应的胺成分，从而防止第二抗蚀剂图案（1b）的分辨率的劣化。
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公开(公告)号：US20070096331A1
公开(公告)日：2007-05-03
申请号：US11640349
申请日：2006-12-18
IPC分类号： H01L23/48
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/31138 , H01L21/76807 , H01L21/76808 , H01L21/76811 , H01L21/76825 , H01L21/76828 , H01L21/76831
摘要： A method of manufacturing a semiconductor device having a damascene structure contains a process of forming a first interlayer insulating film and a second interlayer insulating film formed of a low dielectric constant film on a substrate, forming via holes by using a first resist pattern formed on the second interlayer insulating film, conducting an organic peeling treatment using organic peeling liquid containing amine components and then forming a second resist pattern on the second interlayer insulating film. After the wet treatment before a second antireflection coating is coated so as to be located below the second resist pattern is coated, at least one of an annealing treatment, a plasma treatment, a UV treatment and an organic solvent treatment is carried out to remove amine components which inhibit the catalysis reaction of acid occurring in the resist at the light exposure, thereby preventing degradation of the resolution of the second resist pattern.
摘要翻译： 一种制造具有镶嵌结构的半导体器件的方法包括在基板上形成第一层间绝缘膜和由低介电常数膜形成的第二层间绝缘膜的工艺，通过使用形成在第一层上绝缘膜上的第一抗蚀剂图案形成通孔 第二层间绝缘膜，使用含有胺成分的有机剥离液进行有机剥离处理，然后在第二层间绝缘膜上形成第二抗蚀剂图案。 在第二抗反射涂层涂布第二抗蚀剂图案之下的湿处理之后，涂覆第二抗蚀图案，进行退火处理，等离子体处理，UV处理和有机溶剂处理中的至少一种以除去胺 抑制在曝光时在抗蚀剂中发生的酸的催化反应的成分，从而防止第二抗蚀剂图案的分辨率的劣化。
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公开(公告)号：US20050124168A1
公开(公告)日：2005-06-09
申请号：US10969429
申请日：2004-10-21
IPC分类号： G03F7/38 , H01L21/027 , H01L21/311 , H01L21/768 , H01L21/00 , H01L21/302 , H01L21/461 , H01L21/84
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/31138 , H01L21/76807 , H01L21/76808 , H01L21/76811 , H01L21/76825 , H01L21/76828 , H01L21/76831
摘要： A method of manufacturing a semiconductor device having a damascene structure contains a process of forming a first interlayer insulating film (6) and a second interlayer insulating film (4) formed of a low dielectric-constant film on a substrate, forming via holes (9) by using a first resist pattern (1a) formed on the second interlayer insulating film, conducting an organic peeling treatment using organic peeling liquid containing amine components and then forming a second resist pattern (1b) on the second interlayer insulating film. After the wet treatment, before a second antireflection coating (2b) is coated so as to be located below the second resist pattern is coated, at least one of an annealing treatment, a plasma treatment, a UV treatment and an organic solvent treatment is carried out to remove amine components which inhibit the catalysis reaction of acid occurring in the resist at the light exposure, thereby preventing degradation of the resolution of the second resist pattern (1b).
摘要翻译： 一种制造具有镶嵌结构的半导体器件的方法包括在衬底上形成第一层间绝缘膜（6）和由低介电常数膜形成的第二层间绝缘膜（4）的工艺，形成通孔（9 ）通过使用形成在第二层间绝缘膜上的第一抗蚀剂图案（1a），使用含有胺成分的有机剥离液进行有机剥离处理，然后在第二层间绝缘膜上形成第二抗蚀剂图案（1b）。 在湿处理之后，涂覆第二抗反射涂层（2b）以便位于第二抗蚀图案下方的涂层，退火处理，等离子体处理，UV处理和有机溶剂处理中的至少一个是 进行以除去抑制在曝光时在抗蚀剂中发生的酸的催化反应的胺成分，从而防止第二抗蚀剂图案（1b）的分辨率的劣化。
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