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    Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate
    9.
    发明授权
    Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate 有权
    单晶GaN衬底，生长单晶GaN的方法和制造单晶GaN衬底的方法

    公开(公告)号：US07534310B2

    公开(公告)日：2009-05-19

    申请号：US11434744

    申请日：2006-05-17

    申请人： Kensaku Motoki ,  Ryu Hirota ,  Takuji Okahisa ,  Seiji Nakahata

    发明人： Kensaku Motoki ,  Ryu Hirota ,  Takuji Okahisa ,  Seiji Nakahata

    IPC分类号： C30B29/38

    CPC分类号： C30B29/406 ,  C30B23/002 ,  C30B25/02 ,  C30B29/403

    摘要： A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing voluminous defect accumulating regions (H) accompanying the valleys, yielding low dislocation single crystal regions (Z) following the facets, making C-plane growth regions (Y) following flat tops between the facets, gathering dislocations on the facets into the valleys by the action of the growing facets, reducing dislocations in the low dislocation single crystal regions (Z) and the C-plane growth regions (Y), and accumulating the dislocations in cores (S) or interfaces (K) of the voluminous defect accumulating regions (H).

    摘要翻译： 低位错密度GaN单晶衬底通过形成具有平行条纹的种子掩模，并且定期地在下衬底上周期性地对准，在面生长条件下生长GaN晶体，形成平行的小平面重叠和基于掩模的小平面谷 条纹，保持小平面山丘和小平面谷，产生伴随谷的大量缺陷积聚区域（H），产生小面后的低位错单晶区域（Z），使平面生长区域（Y）在平面之后 通过生长小面的作用将小面上的面陷入谷中，减少低位错单晶区（Z）和C平面生长区（Y）中的位错，并在芯（S）或 大量缺陷积聚区（H）的界面（K）。

    Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate
    10.
    发明申请
    Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate 有权
    生长GaN晶体的方法，单晶GaN衬底的制造方法和单晶GaN衬底

    公开(公告)号：US20080202409A1

    公开(公告)日：2008-08-28

    申请号：US12068891

    申请日：2008-02-13

    申请人： Kensaku Motoki ,  Ryu Hirota ,  Takuji Okahisa ,  Seiji Nakahata

    发明人： Kensaku Motoki ,  Ryu Hirota ,  Takuji Okahisa ,  Seiji Nakahata

    IPC分类号： C30B23/04

    CPC分类号： C30B29/406 ,  C30B23/002 ,  C30B25/02 ,  C30B29/403

    摘要： A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing voluminous defect accumulating regions (H) accompanying the valleys, yielding low dislocation single crystal regions (Z) following the facets, making C-plane growth regions (Y) following flat tops between the facets, gathering dislocations on the facets into the valleys by the action of the growing facets, reducing dislocations in the low dislocation single crystal regions (Z) and the C-plane growth regions (Y), and accumulating the dislocations in cores (S) or interfaces (K) of the voluminous defect accumulating regions (H).

    摘要翻译： 低位错密度GaN单晶衬底通过形成具有平行条纹的种子掩模，并且定期地在下衬底上周期性地对准，在面生长条件下生长GaN晶体，形成平行的小平面重叠和基于掩模的小平面谷 条纹，保持小平面山丘和小平面谷，产生伴随谷的大量缺陷积聚区域（H），产生小面后的低位错单晶区域（Z），使平面生长区域（Y）在平面之后 通过生长小面的作用将小面上的面陷入谷中，减少低位错单晶区（Z）和C平面生长区（Y）中的位错，并在芯（S）或 大量缺陷积聚区（H）的界面（K）。