摘要:
A light emitting device is provided including a switching element. The light emitting device includes a light emitting unit having a plurality of nanostructures that can emit lights with injection of currents, and a transistor provided in correspondence with the light emitting unit and controlling amounts of the currents injected in the nanostructures.
摘要:
A drug application device irradiates terahertz light onto skin, outputs information concerning detection target cytokine determined from reflected rays of the terahertz light, and supplies a drug on the basis of the output information. A detection device irradiates terahertz light onto a patch attached to skin, and outputs information concerning detection target cytokine determined from reflected rays of the terahertz light.
摘要:
An infrared sensor includes a heat sensing element in which a first electrode, a dielectric film, and a second electrode are sequentially laminated; and an electric charge detection device. The dielectric film represents antiferroelectricity and has a spontaneous polarization in a predetermined measurement environment. The electric charge detection device calculates an amount of relaxation current flowing by a change of the spontaneous polarization, and senses heat of the heat sensing element based on temperature dependence of the amount of relaxation current.
摘要:
A biological information detector includes a substrate, a light-emitting element, a light-receiving element, and a bonding pad. The light-emitting element has a thickness of 20 μm to 1000 μm. The light-receiving element has a thickness of 20 μm to 1000 μm. The bonding pad is disposed at a position that overlaps the light-emitting element and that is displaced relative to a center of the light-emitting element in a plan view as viewed in a perpendicular direction perpendicular to an emitting surface of the light-emitting element. A wavelength of light emitted by the light-emitting element is within a range of 470 nm to 600 nm.
摘要:
To provide a thermal electromagnetic wave detection element, a method for producing a thermal electromagnetic wave detection element, a thermal electromagnetic wave detection device, and an electrical apparatus, which are highly reliable and make it possible to prevent damage or deformation in the vicinity of the corner parts of a void, a thermal electromagnetic wave detection element includes: a semiconductor substrate; a support member provided on the semiconductor substrate; a detection unit that is provided on the support member and is able to extract from a pair of electrodes an electrical signal corresponding to a received amount of electromagnetic waves; and a pair of electrically conductive vias that perforate through the semiconductor substrate and are electrically connected to the pair of electrodes, a void that opens on the support member side being provided between the pair of vias of the semiconductor substrate.
摘要:
A pyroelectric light detector has a base unit, a support member, and a plurality of pyroelectric capacitors containing pyroelectric bodies. The support member includes a first surface and a second surface facing opposite the first surface, and has a hollow space section formed between the second surface and the base unit. The plurality of pyroelectric capacitors are supported by the support member. The plurality of pyroelectric capacitors supported by the support member are electrically connected in series in a direction matching the polarization direction. The position of the projection point for which the center of gravity of the light absorption region corresponding to the pyroelectric capacitor is projected two dimensionally with a plan view can be made to exist inside the region in which the contour line of the pyroelectric body of the pyroelectric capacitor is projected two dimensionally.
摘要:
A light emitting device is provided including a switching element. The light emitting device includes a light emitting unit having a plurality of nanostructures that can emit lights with injection of currents, and a transistor provided in correspondence with the light emitting unit and controlling amounts of the currents injected in the nanostructures.
摘要:
A light emitting device includes a substrate, a transistor, a light emitting element, and an interconnection configured to electrically couple the transistor and the light emitting element to each other, wherein the transistor includes a first impurity region provided to the substrate, a second impurity region which is provided to the substrate, and is same in conductivity type as the first impurity region, and a gate, the light emitting element has a stacked body having a plurality of columnar parts, each of the columnar parts includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer, the first semiconductor layer is disposed between the substrate and the light emitting layer, the interconnection is a third impurity region provided to the substrate, the stacked body is provided to the third impurity region, the third impurity region is same in conductivity type as the first semiconductor layer, the third impurity region is electrically coupled to the first semiconductor layer, and the third impurity region is continuous with the first impurity region.
摘要:
In a light emitting device, a columnar part includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer is disposed between the substrate and the light emitting layer, the light emitting layer includes a first layer, and a second layer larger in bandgap than the first layer, the first semiconductor layer has a facet plane, the first layer has a facet plane, the facet plane of the first semiconductor layer is provided with the first layer, and θ2>θ1, in which θ1 is a tilt angle of the facet plane of the first semiconductor layer with respect to a surface of the substrate provided with the laminated structure, and θ2 is a tilt angle of the facet plane of the first layer provided to the facet plane of the first semiconductor layer with respect to the surface of the substrate.
摘要:
A light-emitting device includes a substrate and a stack provided on the substrate. The stack includes a plurality of columnar portions each of which includes a first columnar portion and a second columnar portion which has a diameter smaller than a diameter of the first columnar portions. Each first columnar portion is provided between the substrate and the second columnar portions, and includes: a first semiconductor layer; a second semiconductor layer having a conductivity type different from a conductivity type of the first semiconductor layer; and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer and capable of generating light. The first semiconductor layer is provided between the substrate and the light-emitting layer. Each second columnar portion includes a third semiconductor layer having a conductivity type different from a conductivity type of the first semiconductor layer.