公开(公告)号：US09384976B2

公开(公告)日：2016-07-05

申请号：US14578891

申请日：2014-12-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mitsuhiro Ichijo ,  Tetsuhiro Tanaka ,  Seiji Yasumoto ,  Shun Mashiro ,  Yoshiaki Oikawa ,  Kenichi Okazaki

IPC: H01L21/00 ,  H01L21/02 ,  C23C16/30 ,  C23C16/455 ,  C23C16/511 ,  H01J37/32 ,  H01J37/34 ,  H01L29/49 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L21/44 ,  C23C16/308 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/34 ,  H01L21/02274 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02631 ,  H01L21/67167 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: It is an object to drive a semiconductor device at high speed or to improve the reliability of the semiconductor device. In a method for manufacturing the semiconductor device, in which a gate electrode is formed over a substrate with an insulating property, a gate insulating film is formed over the gate electrode, and an oxide semiconductor film is formed over the gate insulating film, the gate insulating film is formed by deposition treatment using high-density plasma. Accordingly, dangling bonds in the gate insulating film are reduced and the quality of the interface between the gate insulating film and the oxide semiconductor is improved.

公开(公告)号：US09281410B2

公开(公告)日：2016-03-08

申请号：US13794085

申请日：2013-03-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Seiji Yasumoto ,  Shun Mashiro ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/49 ,  H01L21/00 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869

Abstract: A method for manufacturing a semiconductor device including an oxide semiconductor includes the steps of forming an oxide semiconductor film, forming a gate insulating film provided over the oxide semiconductor film, forming a gate electrode in contact with the gate insulating film, a sidewall insulating film in contact with the gate electrode, and forming a source electrode and a drain electrode in contact with the oxide semiconductor film. In the method, the gate insulating film and the sidewall insulating film are formed at a temperature at which oxygen contained in the oxide semiconductor film is inhibited from being eliminated, preferably at a temperature lower than a temperature at which oxygen contained in the oxide semiconductor film is eliminated.

Abstract translation: 一种制造包括氧化物半导体的半导体器件的方法包括以下步骤：形成氧化物半导体膜，形成设置在氧化物半导体膜上的栅极绝缘膜，形成与栅极绝缘膜接触的栅电极， 与栅电极接触，形成与氧化物半导体膜接触的源电极和漏电极。 在该方法中，在氧化物半导体膜中包含的氧被抑制的温度下，优选在低于氧化物半导体膜中所含的氧的温度的温度下形成栅极绝缘膜和侧壁绝缘膜 被淘汰。

公开(公告)号：US20130244374A1

公开(公告)日：2013-09-19

申请号：US13794085

申请日：2013-03-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kenichi Okazaki ,  Seiji Yasumoto ,  Shun Mashiro ,  Shunpei Yamazaki

IPC: H01L29/66

CPC classification number: H01L29/78696 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869

Abstract: A method for manufacturing a semiconductor device including an oxide semiconductor includes the steps of forming an oxide semiconductor film, forming a gate insulating film provided over the oxide semiconductor film, forming a gate electrode in contact with the gate insulating film, a sidewall insulating film in contact with the gate electrode, and forming a source electrode and a drain electrode in contact with the oxide semiconductor film. In the method, the gate insulating film and the sidewall insulating film are formed at a temperature at which oxygen contained in the oxide semiconductor film is inhibited from being eliminated, preferably at a temperature lower than a temperature at which oxygen contained in the oxide semiconductor film is eliminated.

Abstract translation: 一种制造包括氧化物半导体的半导体器件的方法包括以下步骤：形成氧化物半导体膜，形成设置在氧化物半导体膜上的栅极绝缘膜，形成与栅极绝缘膜接触的栅电极， 与栅电极接触，形成与氧化物半导体膜接触的源电极和漏电极。 在该方法中，在氧化物半导体膜中包含的氧被抑制的温度下，优选在低于氧化物半导体膜中所含的氧的温度的温度下形成栅极绝缘膜和侧壁绝缘膜 被淘汰。