公开(公告)号：US11856836B2

公开(公告)日：2023-12-26

申请号：US17479329

申请日：2021-09-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji Yasumoto ,  Kayo Kumakura ,  Yuka Sato ,  Satoru Idojiri ,  Hiroki Adachi ,  Kenichi Okazaki

IPC: H01L27/15 ,  H10K71/00 ,  H10K50/842 ,  H10K71/40 ,  H10K77/10

CPC classification number: H10K71/00 ,  H10K50/8426 ,  H10K71/40 ,  H10K77/111

Abstract: A high-yield fabricating method of a semiconductor device including a peeling step is provided.
A peeling method includes a step of stacking and forming a first material layer and a second material layer over a substrate and a step of separating the first material layer and the second material layer from each other. The second material layer is formed over the substrate with the first material layer therebetween. The first material layer includes a first compound layer in contact with the second material layer and a second compound layer positioned closer to the substrate side than the first compound layer is. The first compound layer has the highest oxygen content among the layers included in the first material layer. The second compound layer has the highest nitrogen content among the layers included in the first material layer. The second material layer includes a resin. In the step of separating, the first material layer and the second material layer are separated from each other by irradiation of an interface between the first material layer and the second material layer or the vicinity of the interface with light.

公开(公告)号：US11616206B2

公开(公告)日：2023-03-28

申请号：US17177457

申请日：2021-02-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masakatsu Ohno ,  Kayo Kumakura ,  Hiroyuki Watanabe ,  Seiji Yasumoto ,  Satoru Idojiri ,  Hiroki Adachi

IPC: H01L51/00 ,  H01L27/12 ,  H01L27/32 ,  H01L51/52 ,  H01L29/786

Abstract: The yield of a separation process is improved. The mass productivity of a display device which is formed through a separation process is improved. A layer is formed over a substrate with use of a material including a resin or a resin precursor. Next, a resin layer is formed by performing heat treatment on the layer. Next, a layer to be separated is formed over the resin layer. Then, the layer to be separated and the substrate are separated from each other. The heat treatment is performed in an atmosphere containing oxygen or while supplying a gas containing oxygen.

公开(公告)号：US11574937B2

公开(公告)日：2023-02-07

申请号：US16983394

申请日：2020-08-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masataka Sato ,  Masakatsu Ohno ,  Seiji Yasumoto ,  Hiroki Adachi

IPC: H01L21/00 ,  H01L27/12 ,  B23K26/351 ,  H01L51/00 ,  H01L51/56 ,  H01L21/77

Abstract: A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.

公开(公告)号：US10693097B2

公开(公告)日：2020-06-23

申请号：US15646146

申请日：2017-07-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji Yasumoto ,  Masataka Sato ,  Hiroki Adachi ,  Toru Takayama ,  Natsuko Takase

IPC: H01L51/50 ,  G09G5/02 ,  H01L51/52 ,  G09G3/20 ,  G02F1/1362 ,  G09G3/3233 ,  G09G3/36 ,  G02F1/1335

Abstract: A first display element includes a first pixel electrode that reflects visible light, a liquid crystal layer, and a first common electrode that transmits visible light. A second display element includes a second pixel electrode that transmits visible light, a light-emitting layer, and a second common electrode that reflects visible light. A separation layer that reflects visible light is formed over a formation substrate, an insulating layer is formed over the separation layer, and the second display element is formed over the insulating layer. The formation substrate and a second substrate are bonded to each other. Then, the formation substrate and the separation layer are separated from each other. The exposed separation layer is processed into the first pixel electrode. The liquid crystal layer is positioned between the first common electrode and the first pixel electrode and a first substrate and the second substrate are bonded to each other.

公开(公告)号：US09384976B2

公开(公告)日：2016-07-05

申请号：US14578891

申请日：2014-12-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mitsuhiro Ichijo ,  Tetsuhiro Tanaka ,  Seiji Yasumoto ,  Shun Mashiro ,  Yoshiaki Oikawa ,  Kenichi Okazaki

IPC: H01L21/00 ,  H01L21/02 ,  C23C16/30 ,  C23C16/455 ,  C23C16/511 ,  H01J37/32 ,  H01J37/34 ,  H01L29/49 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L21/44 ,  C23C16/308 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/34 ,  H01L21/02274 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02631 ,  H01L21/67167 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: It is an object to drive a semiconductor device at high speed or to improve the reliability of the semiconductor device. In a method for manufacturing the semiconductor device, in which a gate electrode is formed over a substrate with an insulating property, a gate insulating film is formed over the gate electrode, and an oxide semiconductor film is formed over the gate insulating film, the gate insulating film is formed by deposition treatment using high-density plasma. Accordingly, dangling bonds in the gate insulating film are reduced and the quality of the interface between the gate insulating film and the oxide semiconductor is improved.

公开(公告)号：US11133491B2

公开(公告)日：2021-09-28

申请号：US16493104

申请日：2018-03-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji Yasumoto ,  Kayo Kumakura ,  Yuka Sato ,  Satoru Idojiri ,  Hiroki Adachi ,  Kenichi Okazaki

IPC: H01L27/15 ,  H01L51/56 ,  H01L51/00 ,  H01L51/52

Abstract: A high-yield fabricating method of a semiconductor device including a peeling step is provided.
A peeling method includes a step of stacking and forming a first material layer and a second material layer over a substrate and a step of separating the first material layer and the second material layer from each other. The second material layer is formed over the substrate with the first material layer therebetween. The first material layer includes a first compound layer in contact with the second material layer and a second compound layer positioned closer to the substrate side than the first compound layer is. The first compound layer has the highest oxygen content among the layers included in the first material layer. The second compound layer has the highest nitrogen content among the layers included in the first material layer. The second material layer includes a resin. In the step of separating, the first material layer and the second material layer are separated from each other by irradiation of an interface between the first material layer and the second material layer or the vicinity of the interface with light.

公开(公告)号：US10923350B2

公开(公告)日：2021-02-16

申请号：US15687915

申请日：2017-08-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masataka Sato ,  Seiji Yasumoto ,  Kayo Kumakura ,  Satoru Idojiri

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/78 ,  H01L27/12 ,  H01L29/66

Abstract: The yield of a manufacturing process of a semiconductor device is increased. The mass productivity of a semiconductor device is increased. A semiconductor device is manufactured by forming a first material layer over a substrate; forming a second material layer over the first material layer; and separating the first material layer and the second material layer from each other; and heating the first material layer and the second material layer that are stacked before the separation. The first material layer includes a gas containing hydrogen, oxygen, or hydrogen and oxygen (e.g., water) in a metal oxide, for example. The second material layer includes a resin. The first material layer and the second material layer are separated from each other by a break of a hydrogen bond. Specifically water is separated out at the interface or near the interface, and then adhesion is reduced due to the water present.

公开(公告)号：US10031392B2

公开(公告)日：2018-07-24

申请号：US15285096

申请日：2016-10-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masataka Nakada ,  Masahiro Katayama ,  Seiji Yasumoto ,  Hiroki Adachi ,  Masataka Sato ,  Koji Kusunoki ,  Yoshiharu Hirakata

IPC: G02F1/1362 ,  G06F3/01 ,  G02F1/1335 ,  G06F3/041 ,  G02F1/1345 ,  G02F1/1333 ,  H01L27/12

Abstract: Provided is a novel display panel that is highly convenient or highly reliable, a novel input/output device that is highly convenient or highly reliable, or a method for manufacturing a novel display panel that is highly convenient or highly reliable. The present inventors conceived a structure including a first intermediate film, a first electrode including a region in contact with the first intermediate film, a pixel that includes a first display element including the first electrode and a pixel circuit electrically connected to the first display element, a signal line electrically connected to the pixel, and a terminal that includes a third conductive film electrically connected to the signal line and a second intermediate film including a region in contact with the third conductive film.

公开(公告)号：US09437832B2

公开(公告)日：2016-09-06

申请号：US14621914

申请日：2015-02-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya Sakuishi ,  Yutaka Uchida ,  Hiroki Adachi ,  Saki Eguchi ,  Junpei Yanaka ,  Kayo Kumakura ,  Seiji Yasumoto ,  Kohei Yokoyama ,  Akihiro Chida

IPC: H01L51/00 ,  B32B7/02 ,  B32B38/10 ,  B32B7/12 ,  B32B15/08 ,  B32B15/18 ,  B32B15/20 ,  B32B17/00 ,  B32B27/20 ,  B32B27/28 ,  B32B27/30 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B37/02 ,  B32B37/18 ,  B32B37/12 ,  H01L51/52

CPC classification number: H01L51/0097 ,  B32B7/02 ,  B32B7/06 ,  B32B7/12 ,  B32B15/08 ,  B32B15/18 ,  B32B15/20 ,  B32B17/00 ,  B32B17/06 ,  B32B27/20 ,  B32B27/286 ,  B32B27/30 ,  B32B27/325 ,  B32B27/34 ,  B32B27/36 ,  B32B27/365 ,  B32B37/02 ,  B32B37/10 ,  B32B37/1292 ,  B32B37/18 ,  B32B38/10 ,  B32B2250/05 ,  B32B2255/20 ,  B32B2260/021 ,  B32B2260/046 ,  B32B2264/102 ,  B32B2307/202 ,  B32B2307/40 ,  B32B2307/50 ,  B32B2307/536 ,  B32B2307/558 ,  B32B2310/0843 ,  B32B2315/08 ,  B32B2457/20 ,  H01L51/003 ,  H01L51/5253 ,  H01L2251/5338 ,  Y02E10/549 ,  Y02P70/521

Abstract: A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.

Abstract translation: 提供了灵活的设备。 柔性装置的粘合层的硬度设定为高于70°的肖氏D值，或优选高于或等于邵氏D的80°。挠性装置的柔性基板的膨胀系数设定得较小 比58ppm /℃，或优选小于或等于30ppm /℃

公开(公告)号：US11637208B2

公开(公告)日：2023-04-25

申请号：US17262793

申请日：2019-07-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Kenichi Okazaki ,  Yasuharu Hosaka ,  Toshimitsu Obonai ,  Yasutaka Nakazawa ,  Seiji Yasumoto ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L27/12 ,  H01L51/50 ,  H05B33/22

Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. A semiconductor device includes a first insulating layer, a second insulating layer, a semiconductor layer, and a first conductive layer. The semiconductor layer, the second insulating layer, and the first conductive layer are stacked in this order over the first insulating layer. The second insulating layer has a stacked-layer structure in which a first insulating film, a second insulating film, and a third insulating film are stacked in this order. The first insulating film, the second insulating film, and the third insulating film each contain an oxide. The first insulating film includes a portion in contact with the semiconductor layer. The semiconductor layer contains indium, gallium, and oxygen and includes a region with an indium content percentage higher than a gallium content percentage.