公开(公告)号：US20040201022A1

公开(公告)日：2004-10-14

申请号：US10834093

申请日：2004-04-29

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Toru Mitsuki ,  Kenji Kasahara ,  Taketomi Asami ,  Tamae Takano ,  Takeshi Shichi ,  Chiho Kokubo

IPC分类号： H01L029/04 ,  H01L021/00

CPC分类号： H01L29/78696 ,  G02F1/13454 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/045 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78624 ,  H01L29/78675 ,  H01L29/78684

摘要： The orientation of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film is improved and a TFT formed from this crystalline semiconductor film is provided. In a semiconductor device whose TFT is formed from a semiconductor layer mainly containing silicon, the semiconductor layer has a channel formation region and an impurity region doped with an impurity of one type of conductivity. 20% or more of the channel formation region is the null101null lattice plane that forms an angle of equal to or less than 10 degree with respect to the surface of the crystalline semiconductor film, the plane being detected by an electron backscatter diffraction pattern method, 3% or less of the channel formation region is the null001null lattice plane that forms an angle of equal to or less than 10 degree with respect to the surface of the crystalline semiconductor film, 5% or less of the channel formation region is the null111null lattice plane that forms an angle of equal to or less than 10 degree with respect to the surface of the crystalline semiconductor film.

公开(公告)号：US20020155706A1

公开(公告)日：2002-10-24

申请号：US10091338

申请日：2002-03-06

申请人： SEMICONDUCTOR ENERGY LABORATORY CO. LTD.

发明人： Toru Mitsuki ,  Takeshi Shichi ,  Shinji Maekawa ,  Hiroshi Shibata ,  Akiharu Miyanaga

IPC分类号： H01L021/44

CPC分类号： H01L29/78621 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78675

摘要： The number of grains in active regions of devices can be made uniform by making the grains of crystalline semiconductor films, obtained by thermal crystallization using a metal element, smaller. The present invention is characterized in that a semiconductor film is exposed within an atmosphere in which a gas, having as its main constituent one or a plurality of members from the group consisting of inert gas elements, nitrogen, and ammonia, is processed into a plasma, and then thermal crystallization using a metal element is performed. The concentration of crystal nuclei1 generated is thus increased, making the grain size smaller, by performing these processes. Heat treatment may also be performed, of course, after exposing the semiconductor film, to which the metal element is added, to an atmosphere in which a gas, having as its main constituent one or a plurality of members from the group consisting of inert gas elements, nitrogen, and ammonia, is processed into a plasma.

摘要翻译： 通过使通过使用金属元素的热结晶获得的结晶半导体膜的晶粒较小，可以使器件的有源区域中的晶粒数均匀。 本发明的特征在于，在由惰性气体元素，氮气和氨组成的组中作为主要成分的一个或多个成分的气体被加工成等离子体的气氛中暴露出半导体膜 ，然后进行使用金属元素的热结晶。 因此，通过进行这些处理，所产生的晶核1的浓度增加，晶粒尺寸变小。 当然也可以在将加入有金属元素的半导体膜暴露于气体中的情况下进行热处理，在该气氛中，以惰性气体为主要成分的一个或多个成分为主要成分的气体 元素，氮和氨，被加工成等离子体。

公开(公告)号：US20040169177A1

公开(公告)日：2004-09-02

申请号：US10792132

申请日：2004-03-04

申请人： Semiconductor Energy Laboratory Co., Ltd. a Japan corporation

发明人： Taketomi Asami ,  Mitsuhiro Ichijo ,  Satoshi Toriumi ,  Takashi Ohtsuki ,  Toru Mitsuki ,  Kenji Kasahara ,  Tamae Takano ,  Chiho Kokubo ,  Shunpei Yamazaki ,  Takeshi Shichi

IPC分类号： H01L029/04

CPC分类号： H01L29/045 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02675 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78666 ,  H01L29/78684 ,  H01L2029/7863

摘要： The orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film through heat treatment and irradiation of intense light such as laser light, ultraviolet rays, or infrared rays is enhanced, and a semiconductor device whose active region is formed from the crystalline semiconductor film and a method of manufacturing the semiconductor device are provided. In a semiconductor film containing silicon and germanium as its ingredient and having a crystal structure, the null101null plane reaches 30% or more of all the lattice planes detected by Electron backscatter diffraction. This semiconductor film is obtained by forming an amorphous semiconductor film containing silicon and germanium as its ingredient through plasma CVD in which hydride, fluoride, or chloride gas of a silicon atom is used, the repetition frequency is set to 10 kHz or less, and the duty ratio is set to 50% or less for intermittent electric discharge or pulsed electric discharge, and introducing an element for promoting crystallization of the amorphous semiconductor film to the surface thereof to crystallize the amorphous semiconductor film while utilizing the introduced element.

摘要翻译： 通过热处理使激光，紫外线或红外线等强光照射而使非晶半导体膜结晶而得到的结晶半导体膜的取向比提高，并且有源区由结晶半导体形成 膜和制造半导体器件的方法。 在含有硅和锗作为其成分且具有晶体结构的半导体膜中，{101}面达到通过电子反向散射衍射检测的所有晶格面的30％以上。 该半导体膜通过使用其中使用硅原子的氢化物，氟化物或氯化物气体，重复频率设定为10kHz以下的等离子体CVD形成含有硅和锗作为其成分的非晶半导体膜， 对于间歇放电或脉冲放电，占空比被设定为50％以下，并且在其表面引入促进非晶半导体膜的结晶化的元素，从而使非晶半导体膜在利用引入元素的同时结晶。

公开(公告)号：US20040108576A1

公开(公告)日：2004-06-10

申请号：US10727651

申请日：2003-12-05

申请人： Semiconductor Energy Laboratory, Co., Ltd., a Japan corporation

发明人： Shunpei Yamazaki ,  Toru Mitsuki ,  Kenji Kasahara ,  Taketomi Asami ,  Tamae Takano ,  Takeshi Shichi ,  Chiho Kokubo ,  Yasuyuki Arai

IPC分类号： H01L029/04

CPC分类号： H01L29/66757 ,  H01L29/78684

摘要： The TFT has a channel-forming region formed of a crystalline semiconductor film obtained by heat-treating and crystallizing an amorphous semiconductor film containing silicon as a main component and germanium in an amount of not smaller than 0.1 atomic % but not larger than 10 atomic % while adding a metal element thereto, wherein not smaller than 20% of the lattice plane null101null has an angle of not larger than 10 degrees with respect to the surface of the semiconductor film, not larger than 3% of the lattice plane null001null has an angle of not larger than 10 degrees with respect to the surface of the semiconductor film, and not larger than 5% of the lattice plane null111null has an angle of not larger than 10 degrees with respect to the surface of the semiconductor film as detected by the electron backscatter diffraction pattern method.

摘要翻译： TFT具有通过以以不小于0.1原子％但不大于10原子％的量将含有硅作为主要成分的非晶半导体膜和锗进行热处理和结晶而获得的晶体半导体膜形成的沟道形成区域， 同时向其中添加金属元素，其中不小于晶格面{101}的20％相对于半导体膜的表面具有不大于10度的角度，不大于晶格面{001 }相对于半导体膜的表面具有不大于10度的角度，并且不大于晶格面{111}的5％相对于半导体的表面具有不大于10度的角度 通过电子背散射衍射图法检测。