公开(公告)号：US20040203219A1

公开(公告)日：2004-10-14

申请号：US10836204

申请日：2004-05-03

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Kenji Kasahara ,  Ritsuko Kawasaki ,  Hisashi Ohtani ,  Koichiro Tanaka

IPC分类号： C30B001/00 ,  H01L021/20 ,  H01L021/36

CPC分类号： H01L21/02675 ,  B23K26/0608 ,  B23K26/067 ,  B23K26/0676 ,  H01L21/2026

摘要： For crystallizing an amorphous semiconductor film by means of irradiation of laser beams, a top surface and a back surface of the amorphous semiconductor film are irradiated with the laser beams. In this case, an effective energy intensity Io of the laser beams to be applied onto the top surface and an effective energy intensity Ionull of the laser beams to be applied onto the back surface satisfy the relationship of 0

公开(公告)号：US20040201023A1

公开(公告)日：2004-10-14

申请号：US10835077

申请日：2004-04-30

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Toru Mitsuki ,  Kenji Kasahara

IPC分类号： H01L029/04 ,  H01L031/20 ,  H01L021/00 ,  H01L021/20

CPC分类号： H01L21/0237 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02675 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/045 ,  H01L29/78696

摘要： An object is to enhance the orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film while using as a substrate a less-heat-resistive material such as glass thereby. providing a semiconductor device using a crystalline semiconductor film with high quality equivalent to a single crystal. A first crystalline semiconductor film and a second crystalline semiconductor film are formed overlying a substrate, which integrally structure a crystalline semiconductor layer. The first and second crystalline semiconductor films are polycrystalline bodies aggregated with a plurality of crystal grains. However, the crystal grains are aligned toward a (101)-plane orientation at a ratio of 30 percent or greater, preferably 80 percent or greater. Also, relying on a plane orientation of the crystal grains in the first crystalline semiconductor film, the second crystalline semiconductor film has a plane orientation also aligned in the same direction with a probability of 60 percent or higher.

摘要翻译： 目的是提高通过使非晶半导体膜结晶获得的结晶半导体膜的取向比，同时使用诸如玻璃之类的耐热性较差的材料作为基板。 提供使用具有与单晶相当的高质量的晶体半导体膜的半导体器件。 第一晶体半导体膜和第二晶体半导体膜形成在基板上，其一体地结构化结晶半导体层。 第一和第二晶体半导体膜是与多个晶粒聚集的多晶体。 然而，晶粒以30％或更大，优选80％或更大的比例朝向（101）面平面取向。 此外，依靠第一结晶半导体膜中的晶粒的平面取向，第二结晶半导体膜的面取向也以相同方向排列，概率为60％以上。

公开(公告)号：US20040140470A1

公开(公告)日：2004-07-22

申请号：US10625904

申请日：2003-07-24

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Hisashi Ohtani

IPC分类号： H01L029/04 ,  H01L021/00

CPC分类号： H01L29/78603 ,  H01L27/1255 ,  H01L27/1277 ,  H01L27/1281

摘要： A crystalline semiconductor film in which the position and size of a crystal grain is controlled is fabricated, and the crystalline semiconductor film is used for a channel formation region of a TFT, so that a high performance TFT is realized. An island-like semiconductor layer is made to have a temperature distribution, and a region where temperature change is gentle is provided to control the nucleus generation speed and nucleus generation density, so that the crystal grain is enlarged. In a region where an island-like semiconductor layer 1003 overlaps with a base film 1002, a thick portion is formed in the base film 1002. The volume of this portion increases and heat capacity becomes large, so that a cycle of temperature change by irradiation of a pulse laser beam to the island-like semiconductor layer becomes gentle (as compared with other thin portion). Like this, a laser beam is irradiated from the front side and reverse side of the substrate to directly heat the semiconductor layer, and heat conduction from the semiconductor layer to the side of the substrate and heat conduction of the semiconductor layer in the horizontal direction to the substrate are used, so that the increase in the size of the crystal grain is realized.

摘要翻译： 制造其中晶体的位置和尺寸被控制的结晶半导体膜，并且晶体半导体膜用于TFT的沟道形成区域，从而实现高性能TFT。 使岛状半导体层具有温度分布，并且设置温度变化缓慢的区域以控制核产生速度和核产生密度，使得晶粒增大。 在岛状半导体层1003与基膜1002重叠的区域中，在基膜1002中形成厚部。该部分的体积增加，热容变大，使得通过照射的温度变化的周期 脉冲激光束到岛状半导体层变得平缓（与其他薄部分相比）。 像这样，从基板的正面侧和反面侧照射激光束，直接加热半导体层，从半导体层向基板侧的热传导，将半导体层沿水平方向的热传导到 使用基板，从而实现晶粒尺寸的增加。

公开(公告)号：US20040094767A1

公开(公告)日：2004-05-20

申请号：US10699668

申请日：2003-11-04

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Kenji Kasahara

IPC分类号： H01L029/04

CPC分类号： H01L29/4908 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78621

摘要： A semiconductor device comprises a first insulating film provided over a substrate and heat-treated, a second insulating film provided over the first insulating film, and a semiconductor film provided over the second insulating film, the second insulating film and the semiconductor film being formed successively without exposing them to the atmosphere.

摘要翻译： 半导体器件包括：设置在基板上并进行热处理的第一绝缘膜，设置在第一绝缘膜上的第二绝缘膜;以及设置在第二绝缘膜上的半导体膜，第二绝缘膜和半导体膜，依次形成 而不会让他们暴露在大气中。

公开(公告)号：US20040248387A1

公开(公告)日：2004-12-09

申请号：US10653883

申请日：2003-09-04

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Ritsuko Kawasaki ,  Kenji Kasahara ,  Hisashi Ohtani

IPC分类号： H01L021/00 ,  C30B001/00 ,  H01L021/20 ,  H01L021/84 ,  H01L021/36

CPC分类号： H01L29/78645 ,  G02F1/13454 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78624 ,  H01L29/78648 ,  H01L29/78675

摘要： To provide a TFT that can operate at a high speed by forming a crystalline semiconductor film while controlling the position and the size of a crystal grain in the film to use the crystalline semiconductor film for a channel forming region of the TFT. Instead of a metal or a highly heat conductive insulating film, only a conventional insulating film is used as a base film to introduce a temperature gradient. A level difference of the base insulating film is provided in a desired location to generate the temperature distribution in the semiconductor film in accordance with the arrangement of the level difference. The starting point and the direction of lateral growth are controlled utilizing the temperature distribution.

摘要翻译： 为了提供可以通过在控制晶片的晶粒的位置和尺寸的同时，通过形成晶体半导体膜来高速操作的TFT，以使用用于TFT的沟道形成区域的晶体半导体膜。 代替金属或高导热绝缘膜，仅使用传统的绝缘膜作为基膜来引入温度梯度。 基底绝缘膜的电平差设置在所需位置，以根据电平差的布置在半导体膜中产生温度分布。 利用温度分布来控制侧向生长的起点和方向。

公开(公告)号：US20040201022A1

公开(公告)日：2004-10-14

申请号：US10834093

申请日：2004-04-29

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Toru Mitsuki ,  Kenji Kasahara ,  Taketomi Asami ,  Tamae Takano ,  Takeshi Shichi ,  Chiho Kokubo

IPC分类号： H01L029/04 ,  H01L021/00

CPC分类号： H01L29/78696 ,  G02F1/13454 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/045 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78624 ,  H01L29/78675 ,  H01L29/78684

摘要： The orientation of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film is improved and a TFT formed from this crystalline semiconductor film is provided. In a semiconductor device whose TFT is formed from a semiconductor layer mainly containing silicon, the semiconductor layer has a channel formation region and an impurity region doped with an impurity of one type of conductivity. 20% or more of the channel formation region is the null101null lattice plane that forms an angle of equal to or less than 10 degree with respect to the surface of the crystalline semiconductor film, the plane being detected by an electron backscatter diffraction pattern method, 3% or less of the channel formation region is the null001null lattice plane that forms an angle of equal to or less than 10 degree with respect to the surface of the crystalline semiconductor film, 5% or less of the channel formation region is the null111null lattice plane that forms an angle of equal to or less than 10 degree with respect to the surface of the crystalline semiconductor film.

公开(公告)号：US20040147065A1

公开(公告)日：2004-07-29

申请号：US10756455

申请日：2004-01-14

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Hidehito Kitakado ,  Ritsuko Kawasaki ,  Kenji Kasahara

IPC分类号： H01L021/00 ,  H01L021/84

CPC分类号： H01L29/66765 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78633

摘要： The present invention provides a semiconductor device in which a bottom-gate TFT or an inverted stagger TFT arranged in each circuit is suitably constructed in conformity with the functionality of the respective circuits, thereby attaining an improvement in the operating efficiency and reliability of the semiconductor device. In the structure, LDD regions in a pixel TFT are arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in an N-channel TFT of a drive circuit is arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in a P-channel TFT of the drive circuit is arranged so as to overlap with a channel protection insulating film and to overlap with the gate electrode.

公开(公告)号：US20040063258A1

公开(公告)日：2004-04-01

申请号：US10678084

申请日：2003-10-06

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Kenji Kasahara ,  Ritsuko Kawasaki ,  Hisashi Ohtani

IPC分类号： H01L021/00

CPC分类号： H01L21/02675 ,  G02F1/13454 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66825

摘要： To realize TFT enabling high-speed operation by fabricating a crystalline semiconductor film in which positions and sizes of crystal grains are controlled and using the crystalline semiconductor film in a channel forming region of TFT, a film thickness is stepped by providing a stepped difference in at least one layer of a matrix insulating film among a plurality of matrix insulating films having refractive indices different from each other. By irradiating laser beam from a rear face side of a substrate (or both sides of a surface side and the rear face side of the substrate), there is formed an effective intensity distribution of laser beam with regard to a semiconductor film and there is produced a temperature gradient in correspondence with a shape of the stepped difference and a distribution of the film thickness of the matrix insulating film in the semiconductor film. By utilizing thereof, a location of producing lateral growth and a direction thereof can be controlled to thereby enable to provide crystal grains having large particle sizes.

公开(公告)号：US20020197778A1

公开(公告)日：2002-12-26

申请号：US10141451

申请日：2002-05-08

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Kenji Kasahara ,  Shinji Maekawa ,  Hiroshi Shibata ,  Hidekazu Miyairi

IPC分类号： H01L021/00 ,  H01L021/84

CPC分类号： H01L27/12 ,  H01L27/1277 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78675 ,  H01L29/78678

摘要： The sizes of crystal masses are made to be a uniform in a crystalline silicon film obtained by a thermal crystallization method in which a metal element is used. An amorphous silicon film to be crystallized is doped with a metal element that accelerates crystallization, and then irradiated with laser light (with an energy which is not large enough to melt the film and which is large enough to allow the metal element to diffuse in the solid silicon film) from the back side of a light-transmissive substrate. Thereafter, heat treatment is performed to obtain a crystalline silicon film. Thus crystal masses in the crystalline silicon film can have a uniform size and the problem of fluctuation between TFTs can be solved.

摘要翻译： 在通过使用金属元素的热结晶法获得的结晶硅膜中，使晶体的尺寸均匀。 要结晶的非晶硅膜掺杂有加速结晶的金属元素，然后用激光（具有不足够的能量熔化膜并且足够大以使金属元素在 固体硅膜）从透光性基板的背面侧。 之后，进行热处理，得到结晶硅膜。 因此，晶体硅膜中的晶体质量可以具有均匀的尺寸，并且可以解决TFT之间的波动问题。

公开(公告)号：US20040248347A1

公开(公告)日：2004-12-09

申请号：US10883767

申请日：2004-07-06

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Akihisa Shimomura ,  Kenji Kasahara ,  Aiko Shiga ,  Hidekazu Miyairi ,  Koichiro Tanaka ,  Koji Dairiki

IPC分类号： H01L021/00 ,  H01L021/84

CPC分类号： H01L21/02686 ,  H01L21/02683 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/6675 ,  H01L29/78672 ,  Y10S438/949

摘要： A laser beam irradiation method that achieves uniform crystallization, even if a film thickness of an a-Si film or the like fluctuates, is provided. The present invention provides a laser beam irradiation method in which a non-single crystal semiconductor film is formed on a substrate having an insulating surface and a laser beam having a wavelength longer than 350 nm is irradiated to the non-single crystal semiconductor film, thus crystallizing the non-single crystal silicon film. The non-single crystal semiconductor film has a film thickness distribution within the surface of the substrate, and a differential coefficient of a laser beam absorptivity with respect to the film thickness of the non-single crystal semiconductor film is positive.

摘要翻译： 即使a-Si膜的膜厚等发生波动，也能够实现均匀结晶化的激光束照射方法。 本发明提供一种激光束照射方法，其中在具有绝缘面的基板上形成非单晶半导体膜，并且将具有波长超过350nm的激光束照射到非单晶半导体膜上，因此 使非单晶硅膜结晶。 非单晶半导体膜在基板的表面内具有膜厚分布，并且相对于非单晶半导体膜的膜厚度的激光束吸收率的微分系数为正。