公开(公告)号：US20110175051A1

公开(公告)日：2011-07-21

申请号：US12979922

申请日：2010-12-28

Applicant: Seok-Pyo SONG ,  Yu-Jin LEE

Inventor： Seok-Pyo SONG ,  Yu-Jin LEE

IPC: H01L47/00 ,  H01L21/76

CPC classification number: H01L45/1273 ,  G11C2213/52 ,  H01L27/2409 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/1253 ,  H01L45/16

Abstract: A resistive memory device includes a lower electrode formed on a substrate, a resistive layer formed on the lower electrode, and an upper electrode on the resistive layer, wherein a lower portion of the upper electrode is narrower than an upper portion of the upper electrode.

Abstract translation: 电阻式存储器件包括形成在基板上的下电极，形成在下电极上的电阻层和电阻层上的上电极，其中上电极的下部比上电极的上部窄。

公开(公告)号：US20120252148A1

公开(公告)日：2012-10-04

申请号：US13223958

申请日：2011-09-01

Applicant: Ji-Young PARK ,  Shin-Il CHOI ,  Jong-Hyun CHOUNG ,  Sang Gab KIM ,  Seon-Il KIM ,  Sang-Tae KIM ,  Joon-Woo LEE ,  Young-Chul PARK ,  Young-Jun JIN ,  Kyong-Min KANG ,  Suck-Jun LEE ,  O-Byoung KWON ,  In-Ho YU ,  Sang-Hoon JANG ,  Min-Ki LIM ,  Yu-Jin LEE

Inventor： Ji-Young PARK ,  Shin-Il CHOI ,  Jong-Hyun CHOUNG ,  Sang Gab KIM ,  Seon-Il KIM ,  Sang-Tae KIM ,  Joon-Woo LEE ,  Young-Chul PARK ,  Young-Jun JIN ,  Kyong-Min KANG ,  Suck-Jun LEE ,  O-Byoung KWON ,  In-Ho YU ,  Sang-Hoon JANG ,  Min-Ki LIM ,  Yu-Jin LEE

IPC: H01L33/36 ,  C09K13/08

CPC classification number: C09K13/08 ,  C23F1/18 ,  C23F1/26 ,  C23F1/44 ,  H01L21/32134 ,  H01L27/1259 ,  H01L29/41733

Abstract: An etchant according to exemplary embodiments of the present invention includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.05 wt % to about 3 wt % of copper salt, about 0.1 wt % to about 10 wt % of organic acid or organic acid salt, and water.

Abstract translation: 根据本发明的示例性实施方案的蚀刻剂包括约0.5重量％至约20重量％的过硫酸盐，约0.01重量％至约2重量％的氟化合物，约1重量％至约10重量％的无机酸， 约0.5重量％至约5重量％的环胺化合物，约0.1重量％至约5重量％的氯化合物，约0.05重量％至约3重量％的铜盐，约0.1重量％至约10重量％ ％的有机酸或有机酸盐，和水。

公开(公告)号：US20100117041A1

公开(公告)日：2010-05-13

申请号：US12344443

申请日：2008-12-26

Applicant: Yun-Taek HWANG ,  Yu-Jin LEE

Inventor： Yun-Taek HWANG ,  Yu-Jin LEE

IPC: H01L47/00 ,  H01L21/00

CPC classification number: H01L27/24 ,  Y10S438/903 ,  Y10S977/762 ,  Y10S977/843 ,  Y10S977/943

Abstract: A resistive memory device includes a first conductive line on a substrate, a vertical selection diode comprising a nanowire or a nanotube and being arranged over the first conductive line, a resistive element including a resistive layer arranged over the vertical selection diode; and a second conductive line arranged over the resistive element.

Abstract translation: 电阻式存储器件包括衬底上的第一导电线，包括纳米线或纳米管并且布置在第一导线上的垂直选择二极管，包括布置在垂直选择二极管上的电阻层的电阻元件; 以及布置在所述电阻元件上的第二导线。

公开(公告)号：US20110002527A1

公开(公告)日：2011-01-06

申请号：US12829996

申请日：2010-07-02

Applicant: Joong-Ki JEONG ,  Yu-Jin LEE ,  Seung-Jun LEE ,  Bong-Ha HWANG

Inventor： Joong-Ki JEONG ,  Yu-Jin LEE ,  Seung-Jun LEE ,  Bong-Ha HWANG

IPC: G06K9/00

CPC classification number: G01R31/309 ,  G01B11/2531 ,  G06T7/521

Abstract: An inspection method includes photographing a measurement target to acquire image data for each pixel of the measurement target, acquiring height data for each pixel of the measurement target, acquiring visibility data for each pixel of the measurement target, multiplying the acquired image data by at least one of the height data and the visibility data for each pixel to produce a result value, and setting a terminal area by using the produced result value. Thus, the terminal area may be accurately determined.

Abstract translation: 检查方法包括拍摄测量对象以获取测量对象的每个像素的图像数据，获取测量对象的每个像素的高度数据，获取测量对象的每个像素的可见度数据，至少将所获取的图像数据乘以 为每个像素生成结果值的高度数据和可见度数据之一，以及通过使用所产生的结果值来设置终端区域。 因此，终端区域可以被准确地确定。

公开(公告)号：US20100019240A1

公开(公告)日：2010-01-28

申请号：US12411455

申请日：2009-03-26

Applicant: Yu-Jin LEE ,  Hwang Yun-Taek

Inventor： Yu-Jin LEE ,  Hwang Yun-Taek

IPC: H01L29/786 ,  H01L21/34

CPC classification number: H01L45/1233 ,  H01L45/04 ,  H01L45/1273 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16

Abstract: A resistive memory device includes: a bottom electrode formed over a substrate; and an insulation layer having a hole structure formed over the substrate structure. Herein, the hole structure exposes the bottom electrode, has sidewalls of positive slope, and has a bottom width equal to or smaller than a width of the bottom electrode; a resistive layer formed over the hole structure; and an upper electrode formed over the resistive layer.

Abstract translation: 电阻式存储器件包括：形成在衬底上的底部电极; 以及在基板结构上形成有孔结构的绝缘层。 这里，孔结构暴露底部电极，具有正斜率的侧壁，并且底部宽度等于或小于底部电极的宽度; 形成在孔结构上的电阻层; 以及形成在电阻层上的上电极。