公开(公告)号：US07329321B2

公开(公告)日：2008-02-12

申请号：US11061944

申请日：2005-02-17

申请人： Seokmin Yun ,  John M. Boyd ,  Mark Wilcoxson ,  John deLarios

发明人： Seokmin Yun ,  John M. Boyd ,  Mark Wilcoxson ,  John deLarios

IPC分类号： B08B1/02

CPC分类号： H01L21/67028 ,  C23G1/00 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67051 ,  Y10S134/902

摘要： A method for removing post-processing residues in a single wafer cleaning system is provided. The method initiates with providing a first heated fluid to a proximity head disposed over a substrate. Then, a meniscus of the first fluid is generated between a surface of the substrate and an opposing surface of the proximity head. The substrate is linearly moved under the proximity head. A single wafer cleaning system is also provided.

摘要翻译： 提供了一种用于去除单个晶片清洁系统中的后处理残留物的方法。 该方法通过向设置在基板上的接近头部提供第一加热流体而开始。 然后，在基板的表面和邻近头部的相对表面之间产生第一流体的弯月面。 基板在邻近头部下线性移动。 还提供单个晶片清洁系统。

公开(公告)号：US07568488B2

公开(公告)日：2009-08-04

申请号：US11954167

申请日：2007-12-11

申请人： Seokmin Yun ,  John M. Boyd ,  Mark Wilcoxson ,  John deLarios

发明人： Seokmin Yun ,  John M. Boyd ,  Mark Wilcoxson ,  John deLarios

IPC分类号： B08B3/00

CPC分类号： H01L21/67028 ,  C23G1/00 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67051 ,  Y10S134/902

摘要： A method for removing post-processing residues in a single wafer cleaning system is provided. The method initiates with providing a first heated fluid to a proximity head disposed over a substrate. Then, a meniscus of the first fluid is generated between a surface of the substrate and an opposing surface of the proximity head. The substrate is linearly moved under the proximity head. A single wafer cleaning system is also provided.

摘要翻译： 提供了一种用于去除单个晶片清洁系统中的后处理残留物的方法。 该方法通过向设置在基板上的接近头部提供第一加热流体而开始。 然后，在基板的表面和邻近头部的相对表面之间产生第一流体的弯月面。 基板在邻近头部下线性移动。 还提供单个晶片清洁系统。

公开(公告)号：US20130061887A1

公开(公告)日：2013-03-14

申请号：US13670305

申请日：2012-11-06

申请人： Mikhail Korolik ,  Michael Ravkin ,  John deLarios ,  Fritz C. Redeker ,  John M. Boyd

发明人： Mikhail Korolik ,  Michael Ravkin ,  John deLarios ,  Fritz C. Redeker ,  John M. Boyd

IPC分类号： B08B3/04

CPC分类号： H01L21/67051 ,  G03F7/422 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/6704 ,  Y10S134/902

摘要： A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non-Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes the resulting non-Newtonian fluid to remove the material from the semiconductor wafer.

摘要翻译： 压力保持在其中半导体晶片所处于的体积内的压力足以将前体流体的液体状态保持为非牛顿流体。 前体流体靠近要从半导体晶片去除的材料设置，同时保持前体流体处于液态。 在半导体晶片所在的体积中的压力降低，使得设置在体积内的晶片上的前体流体被转化成非牛顿流体。 在转化成非牛顿流体期间，前体流体的膨胀和前体流体相对于晶片的移动导致所得到的非牛顿流体从半导体晶片中去除材料。

公开(公告)号：US06857435B2

公开(公告)日：2005-02-22

申请号：US10803118

申请日：2004-03-16

申请人： John M. Boyd ,  John deLarios ,  Carl Woods

发明人： John M. Boyd ,  John deLarios ,  Carl Woods

IPC分类号： B08B3/02 ,  B08B3/12 ,  C25F5/00

CPC分类号： B08B3/12 ,  B08B3/02 ,  B08B2203/0288 ,  Y10S134/902

摘要： A method for cleaning a semiconductor substrate with a sonic cleaner is provided. The method initiates by introducing a cooling fluid into an inner jacket region of a sonic cleaner to cool a sonic resonator positioned within the inner jacket region. Then, a cleaning agent is introduced into an outer jacket region of the sonic cleaner to clean a semiconductor substrate. Next, a cooling fluid/cleaning agent interface is defined at an orifice location between the inner jacket region and the outer jacket region. Then, sonic energy from the resonator is transmitted to the cleaning agent through the interface at the orifice. Next, the cleaning agent is applied to the semiconductor substrate.

摘要翻译： 提供了一种用声波清洁器清洗半导体衬底的方法。 该方法通过将冷却流体引入到声音清洁器的内护套区域中来冷却位于内护套区域内的声波谐振器。 然后，将清洁剂引入到声音清洁器的外护套区域中以清洁半导体衬底。 接下来，在内护套区域和外护套区域之间的孔口部位处限定冷却流体/清洁剂界面。 然后，来自谐振器的声能通过孔口处的界面传递到清洁剂。 接下来，将清洁剂施加到半导体衬底。

公开(公告)号：US08323420B2

公开(公告)日：2012-12-04

申请号：US11174080

申请日：2005-06-30

申请人： Mikhail Korolik ,  Michael Ravkin ,  John deLarios ,  Fritz C. Redeker ,  John M. Boyd

发明人： Mikhail Korolik ,  Michael Ravkin ,  John deLarios ,  Fritz C. Redeker ,  John M. Boyd

IPC分类号： B08B7/00 ,  B08B7/04 ,  B08B3/00

CPC分类号： H01L21/67051 ,  G03F7/422 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/6704 ,  Y10S134/902

摘要： A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non-Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes the resulting non-Newtonian fluid to remove the material from the semiconductor wafer.

摘要翻译： 压力保持在其中半导体晶片所处于的体积内的压力足以将前体流体的液体状态保持为非牛顿流体。 前体流体靠近要从半导体晶片去除的材料设置，同时保持前体流体处于液态。 在半导体晶片所在的体积中的压力降低，使得设置在体积内的晶片上的前体流体被转化成非牛顿流体。 在转化成非牛顿流体期间，前体流体的膨胀和前体流体相对于晶片的移动导致所得到的非牛顿流体从半导体晶片中去除材料。

公开(公告)号：US06729339B1

公开(公告)日：2004-05-04

申请号：US10187162

申请日：2002-06-28

申请人： John M. Boyd ,  John deLarios ,  Carl Woods

发明人： John M. Boyd ,  John deLarios ,  Carl Woods

IPC分类号： B08B600

CPC分类号： B08B3/12 ,  B08B3/02 ,  B08B2203/0288 ,  Y10S134/902

摘要： A method for cleaning a semiconductor substrate is provided. The method initiates with introducing a liquid onto the top surface of the semiconductor substrate. Then, a bottom surface of a resonator is coupled to a top surface of a semiconductor substrate through the liquid. Next, sonic energy is transmitted through the resonator to the liquid. Then, the liquid is heated through the bottom surface of the resonator. A method for applying localized heating to a cleaning chemistry during a cleaning operation of a semiconductor substrate is also provided. The method initiates with positioning a resonator to contact a surface of a cleaning chemistry applied to a semiconductor substrate. Then, heat energy is simultaneously applied with the sonic energy through the resonator to clean the semiconductor substrate. A device for cleaning a semiconductor substrate and system for cleaning a semiconductor substrate are also provided.

摘要翻译： 提供一种清洗半导体衬底的方法。 该方法通过将液体引入到半导体衬底的顶表面上而开始。 然后，谐振器的底表面通过液体耦合到半导体衬底的顶表面。 接下来，声能通过谐振器传输到液体。 然后，液体通过谐振器的底表面被加热。 还提供了在半导体衬底的清洁操作期间将局部加热应用于清洁化学品的方法。 该方法通过定位谐振器来接触施加到半导体衬底的清洁化学品的表面。 然后，通过谐振器与声能同时施加热能来清洁半导体衬底。 还提供了用于清洁半导体衬底的装置和用于清洁半导体衬底的系统。

公开(公告)号：US20060096048A1

公开(公告)日：2006-05-11

申请号：US11316780

申请日：2005-12-23

申请人： Katrina Mikhaylichenko ,  Michael Ravkin ,  John deLarios

发明人： Katrina Mikhaylichenko ,  Michael Ravkin ,  John deLarios

IPC分类号： B08B1/04

CPC分类号： B08B1/04 ,  H01L21/67046

摘要： A system and a method for cleaning and rinsing a wafer includes at least three rollers that are capable of supporting a wafer by an edge of the wafer. At least one of the rollers is driven and thereby capable of rotating the wafer. At least one of the rollers is a movable roller mounted on an actuator. The system and method also includes a first movable scrubbing roller capable of being moved away from and alternatively to the first side of the wafer. A second movable scrubbing roller capable of being moved away from and alternatively to a second side of the wafer is also included. The second side of the wafer opposes the first side of the wafer. The system and method also includes at least one first side nozzle directed toward the first side of the wafer and at least one second side nozzle directed toward the second side of the wafer.

摘要翻译： 用于清洁和漂洗晶片的系统和方法包括能够通过晶片的边缘支撑晶片的至少三个辊。 驱动至少一个辊，从而能够使晶片旋转。 至少一个辊是安装在致动器上的可动辊。 该系统和方法还包括能够远离晶片的第一侧移动的第一可移动擦洗辊。 还包括能够移动离开晶片的另一侧的第二可动擦洗辊。 晶片的第二面与晶片的第一面相反。 该系统和方法还包括朝向晶片的第一侧的至少一个第一侧喷嘴和朝向晶片的第二侧的至少一个第二侧喷嘴。

公开(公告)号：US08102014B2

公开(公告)日：2012-01-24

申请号：US12886278

申请日：2010-09-20

申请人： Katrina Mikhaylichenko ,  John deLarios

发明人： Katrina Mikhaylichenko ,  John deLarios

IPC分类号： H01L21/66

CPC分类号： H01L21/67023 ,  B08B3/02 ,  C25D17/00 ,  C25D17/001 ,  C25D21/02 ,  H01L21/67028 ,  H01L21/6704 ,  H01L21/67051 ,  H01L21/67063 ,  H01L21/6708 ,  H01L21/67109

摘要： Provided is an apparatus and a method for heating fluid in a proximity head. A method for semiconductor wafer processing, includes providing liquid to a proximity head including a heating portion, heating the liquid within the heating portion of the proximity head and delivering the heated liquid to a surface of a semiconductor wafer for use in a wafer processing operation including forming a meniscus between the proximity head and the surface of the semiconductor wafer.

摘要翻译： 提供了用于加热邻近头部中的流体的装置和方法。 一种用于半导体晶片处理的方法，包括向包括加热部分的接近头部提供液体，加热邻近头部的加热部分内的液体并将加热的液体输送到晶片加工操作中使用的半导体晶片的表面，包括 在接近头部和半导体晶片的表面之间形成弯液面。

公开(公告)号：US20070000518A1

公开(公告)日：2007-01-04

申请号：US11174080

申请日：2005-06-30

申请人： Mikhail Korolik ,  Michael Ravkin ,  John deLarios ,  Fritz Redeker ,  John Boyd

发明人： Mikhail Korolik ,  Michael Ravkin ,  John deLarios ,  Fritz Redeker ,  John Boyd

IPC分类号： B08B3/04

CPC分类号： H01L21/67051 ,  G03F7/422 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/6704 ,  Y10S134/902

摘要： A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non-Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes the resulting non-Newtonian fluid to remove the material from the semiconductor wafer.

摘要翻译： 压力保持在其中半导体晶片所处于的体积内的压力足以将前体流体的液体状态保持为非牛顿流体。 前体流体靠近要从半导体晶片去除的材料设置，同时保持前体流体处于液态。 在半导体晶片所在的体积中的压力降低，使得设置在体积内的晶片上的前体流体被转化成非牛顿流体。 在转化成非牛顿流体期间，前体流体的膨胀和前体流体相对于晶片的移动导致所得到的非牛顿流体从半导体晶片中去除材料。

公开(公告)号：US20060260932A1

公开(公告)日：2006-11-23

申请号：US11494997

申请日：2006-07-28

申请人： Mike Ravkin ,  John Boyd ,  Yezdi Dordi ,  Fred Redeker ,  John deLarios

发明人： Mike Ravkin ,  John Boyd ,  Yezdi Dordi ,  Fred Redeker ,  John deLarios

IPC分类号： C25D17/00

CPC分类号： C25D17/10 ,  C25D5/026 ,  C25D5/22 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051

摘要： An electroplating apparatus for depositing a metallic layer on a surface of a wafer is provided. In one example, a proximity head capable of being electrically charged as an anode is placed in close proximity to the surface of the wafer. A plating fluid is provided between the wafer and the proximity head to create localized metallic plating.

摘要翻译： 提供了一种用于在晶片的表面上沉积金属层的电镀设备。 在一个示例中，能够被充电作为阳极的接近头放置在紧邻晶片表面的位置。 在晶片和邻近头之间提供电镀液以产生局部金属电镀。