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    Method of modifying carbon nanotube using radical initiator, and dispersion liquid and electrode comprising the carbon nanotube modified by using the method
    4.
    发明授权
    Method of modifying carbon nanotube using radical initiator, and dispersion liquid and electrode comprising the carbon nanotube modified by using the method 有权
    使用自由基引发剂改性碳纳米管的方法以及使用该方法改性的包含碳纳米管的分散液和电极

    公开(公告)号：US08480994B2

    公开(公告)日：2013-07-09

    申请号：US12026081

    申请日：2008-02-05

    申请人： Hyeon-jin Shin ,  Jae-young Choi ,  Seong-jae Choi ,  Seon-mi Yoon

    发明人： Hyeon-jin Shin ,  Jae-young Choi ,  Seong-jae Choi ,  Seon-mi Yoon

    IPC分类号： H01B1/04 ,  C09C1/44

    CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B32/174 ,  C01B2202/28 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/0455

    摘要： Provided is a method of modifying carbon nanotubes, the method including: preparing a mixed solution in which a radical initiator and a carbon nanotube are dispersed; applying energy to the mixed solution to decompose the radical initiator into a radical; and reacting the decomposed radical with a surface of the carbon nanotube, wherein the radical which has reacted with the carbon nanotube is detached from the carbon nanotube after the reaction with the carbon nanotube. In the method of modifying carbon nanotube, a radical is reacted with a carbon nanotube and then separated from the carbon nanotube to thus modify the surface of the carbon nanotube without chemical bonding. Accordingly, the conductivity of the carbon nanotube can be increased.

    摘要翻译： 提供一种碳纳米管的改性方法，该方法包括：制备分散自由基引发剂和碳纳米管的混合溶液; 向混合溶液施加能量以将自由基引发剂分解成自由基; 并使分解的自由基与碳纳米管的表面反应，其中与碳纳米管反应后与碳纳米管反应的基团与碳纳米管分离。 在碳纳米管的改性方法中，使自由基与碳纳米管反应，然后与碳纳米管分离，从而改变碳纳米管的表面，而无需化学键合。 因此，能够提高碳纳米管的导电性。

    Memory device having nanocrystals in memory cell
    5.
    发明授权
    Memory device having nanocrystals in memory cell 有权
    在存储器单元中具有纳米晶体的存储器件

    公开(公告)号：US07501680B2

    公开(公告)日：2009-03-10

    申请号：US11711714

    申请日：2007-02-28

    申请人： Kwang-soo Seol ,  Seong-jae Choi ,  Jae-young Choi ,  Yo-sep Min ,  Eun-joo Jang ,  Dong-kee Yi

    发明人： Kwang-soo Seol ,  Seong-jae Choi ,  Jae-young Choi ,  Yo-sep Min ,  Eun-joo Jang ,  Dong-kee Yi

    IPC分类号： H01L21/336

    CPC分类号： H01L29/42332 ,  B82Y10/00 ,  H01L21/28273 ,  H01L29/51 ,  H01L29/513 ,  H01L29/7881 ,  Y10S977/721 ,  Y10S977/785 ,  Y10S977/943

    摘要： The memory device includes a source region and a drain region in a substrate and spaced apart from each other; a memory cell formed on a surface of the substrate, wherein the memory cell connects the source region and the drain region and includes a plurality of nanocrystals; a control gate formed on the memory cell. The memory cell includes a first tunneling oxide layer formed on the substrate; a second tunneling oxide layer formed on the first tunneling oxide layer; and a control oxide layer formed on the second tunneling oxide layer. The control oxide layer includes the nanocrystals. The second tunneling oxide layer, having an aminosilane group the increases electrostatic attraction, may be hydrophilic, enabling the formation of a monolayer of the nanocrystals.

    摘要翻译： 该存储装置包括一基板中的一源极区和一漏极区，彼此间隔开; 形成在所述基板的表面上的存储单元，其中所述存储单元连接所述源极区域和所述漏极区域并且包括多个纳米晶体; 形成在存储单元上的控制栅极。 存储单元包括形成在基板上的第一隧穿氧化层; 形成在第一隧道氧化物层上的第二隧穿氧化物层; 以及形成在第二隧道氧化物层上的控制氧化物层。 控制氧化物层包括纳米晶体。 具有增加静电吸引力的氨基硅烷基团的第二隧道氧化物层可以是亲水性的，能够形成纳米晶体的单层。

    Memory device having nanocrystals and methods of manufacturing the same
    6.
    发明申请
    Memory device having nanocrystals and methods of manufacturing the same 有权
    具有纳米晶体的记忆装置及其制造方法

    公开(公告)号：US20070257297A1

    公开(公告)日：2007-11-08

    申请号：US11711714

    申请日：2007-02-28

    申请人： Kwang-soo Seol ,  Seong-jae Choi ,  Jae-young Choi ,  Yo-sep Min ,  Eun-joo Jang ,  Dong-kee Yi

    发明人： Kwang-soo Seol ,  Seong-jae Choi ,  Jae-young Choi ,  Yo-sep Min ,  Eun-joo Jang ,  Dong-kee Yi

    IPC分类号： H01L21/336 ,  H01L29/76

    CPC分类号： H01L29/42332 ,  B82Y10/00 ,  H01L21/28273 ,  H01L29/51 ,  H01L29/513 ,  H01L29/7881 ,  Y10S977/721 ,  Y10S977/785 ,  Y10S977/943

    摘要： The memory device includes a source region and a drain region in a substrate and spaced apart from each other; a memory cell formed on a surface of the substrate, wherein the memory cell connects the source region and the drain region and includes a plurality of nanocrystals; a control gate formed on the memory cell. The memory cell includes a first tunneling oxide layer formed on the substrate; a second tunneling oxide layer formed on the first tunneling oxide layer; and a control oxide layer formed on the second tunneling oxide layer. The control oxide layer includes the nanocrystals. The second tunneling oxide layer, having an aminosilane group the increases electrostatic attraction, may be hydrophilic, enabling the formation of a monolayer of the nanocrystals.

    摘要翻译： 该存储装置包括一基板中的一源极区和一漏极区，彼此间隔开; 形成在所述基板的表面上的存储单元，其中所述存储单元连接所述源极区域和所述漏极区域并且包括多个纳米晶体; 形成在存储单元上的控制栅极。 存储单元包括形成在基板上的第一隧穿氧化层; 形成在第一隧道氧化物层上的第二隧穿氧化物层; 以及形成在第二隧道氧化物层上的控制氧化物层。 控制氧化物层包括纳米晶体。 具有增加静电吸引力的氨基硅烷基团的第二隧道氧化物层可以是亲水性的，能够形成纳米晶体的单层。