摘要:
Disclosed herein is an apparatus for cleaning a lubricant for dry-type wire drawing. The apparatus comprises a case provided with a cover and piercing holes at opposite sides of the case such that a steel wire can pass through the case, a plurality of driving motors provided at one side of the exterior of the case, rotating members located at an inside of the case and connected to the driving motors, respectively, by belts serving to rotate them, support plates for supporting the rotating members, and cleaning members coupled to the rotating member and adapted to provide a path through which the steel wire passes. The dry lubricant on the surface of the steel wire can be effectively cleaned by friction between the lubricant on the steel wire and the cleaning members.
摘要:
Disclosed herein is an apparatus for cleaning a lubricant for dry-type wire drawing. The apparatus comprises a case provided with a cover and piercing holes at opposite sides of the case such that a steel wire can pass through the case, a plurality of driving motors provided at one side of the exterior of the case, rotating members located at an inside of the case and connected to the driving motors, respectively, by belts serving to rotate them, support plates for supporting the rotating members, and cleaning members coupled to the rotating member and adapted to provide a path through which the steel wire passes. The dry lubricant on the surface of the steel wire can be effectively cleaned by friction between the lubricant on the steel wire and the cleaning members.
摘要:
An apparatus for manufacturing a trapezoidal wire using two-set shaping rollers has a body rotating about a central axis at a predetermined speed, a plurality of first shaping roller sets installed along an outer circumference of the body, each first shaping roller set including an upper roller and a lower roller and a shaping portion, into which a wire is inserted to be processed, between the upper roller and the lower roller, and a plurality of second shaping roller sets arranged after the first shaping roller sets along the outer circumference of the body and in a direction in which the wire moves, each second shaping roller set comprising an upper roller and a lower roller and a shaping portion, into which the wire is inserted to be processed again, between the upper roller and the lower roller, wherein wires processed by the first and second shaping roller sets while passing therethrough are stranded by the rotating body. The apparatus can significantly improve a wire processing rate while reducing a defect rate.
摘要:
An apparatus for manufacturing a trapezoidal wire using two-set shaping rollers has a body rotating about a central axis at a predetermined speed, a plurality of first shaping roller sets installed along an outer circumference of the body, each first shaping roller set including an upper roller and a lower roller and a shaping portion, into which a wire is inserted to be processed, between the upper roller and the lower roller, and a plurality of second shaping roller sets arranged after the first shaping roller sets along the outer circumference of the body and in a direction in which the wire moves, each second shaping roller set comprising an upper roller and a lower roller and a shaping portion, into which the wire is inserted to be processed again, between the upper roller and the lower roller, wherein wires processed by the first and second shaping roller sets while passing therethrough are stranded by the rotating body. The apparatus can significantly improve a wire processing rate while reducing a defect rate.
摘要:
Provided are a semiconductor integrated device and a method for fabricating the same. The semiconductor integrated circuit includes a semiconductor substrate including a first dopant, a first conductive layer pattern formed on the semiconductor substrate, an interlayer dielectric layer formed on the first conductive layer pattern, a second conductive layer pattern formed on the interlayer dielectric layer, and a first vacuum ultraviolet (VUV) blocking layer which blocks a VUV ray radiated to the semiconductor substrate.
摘要:
An electrically erasable and programmable read-only memory (EEPROM) is provided. The EEPROM includes a semiconductor substrate including spaced apart first, second and third active regions, a common floating gate traversing over the first through third active regions, source/drain regions formed in the third active region on opposite sides of the floating gate, a first interconnect connected to the first active region, a second interconnect connected to the second active region, and a third interconnect connected to either one of the source/drain regions.
摘要:
Provided are a cell structure of an EPROM device and a method for fabricating the same. The cell structure includes a gate stack, which includes a first floating gate, an insulating pattern including a nitride layer, and a control gate that are sequentially stacked on a semiconductor substrate, and includes a window for exposing the top surface or both sidewalls of the first floating gate on both sides of the control gate, so that charges of the first floating gate can be erased by ultraviolet rays. The cell structure further includes a floating gate transistor, which includes a gate insulating layer formed on the semiconductor substrate, a second floating gate that is formed on the gate insulating layer and is connected to the first floating gate in the gate stack, and a source/drain that is formed in the semiconductor substrate so as to be aligned to the second floating gate. In the cell structure, the window is formed on the top surface or both sidewalls of the first floating gate of the gate stack. Thus, ultraviolet rays can penetrate through the window and easily erase charges of the programmed cell.
摘要:
An electronic device on a semiconductor substrate can include first and second field effect transistors on a substrate. In particular, the first field effect transistor includes a first gate dielectric layer having a first nitrogen concentration, and the second field effect transistor includes a second gate dielectric layer having a second nitrogen concentration lower than the first nitrogen concentration. More particularly, the first field effect transistor can be a PMOS transistor, and the second field effect transistor can be an NMOS transistor. Related methods are also discussed.
摘要:
Semiconductor device having an on-chip type electrostatic discharge (ESD) protection circuit and a method of manufacturing the same are provided. The on-chip type ESD protection circuit may include a first junction diode having a first conductive type region contacting a second conductive type region in a semiconductor substrate, and a first schottky diode having a metallic material layer arranged on and contacting the first conductive type region of the semiconductor substrate.
摘要:
Provided are a semiconductor integrated device and a method for fabricating the same. The semiconductor integrated circuit includes a semiconductor substrate including a first dopant, a first conductive layer pattern formed on the semiconductor substrate, an interlayer dielectric layer formed on the first conductive layer pattern, a second conductive layer pattern formed on the interlayer dielectric layer, and a first vacuum ultraviolet (VUV) blocking layer which blocks a VUV ray radiated to the semiconductor substrate.