Lubricant cleansing apparatus for dry-type wire drawing
    1.
    发明授权
    Lubricant cleansing apparatus for dry-type wire drawing 失效
    干式拉丝用润滑剂清洗装置

    公开(公告)号:US07334289B2

    公开(公告)日:2008-02-26

    申请号:US10916843

    申请日:2004-08-12

    IPC分类号: B08B1/04 B08B1/02

    CPC分类号: B21C9/00 B21C43/02

    摘要: Disclosed herein is an apparatus for cleaning a lubricant for dry-type wire drawing. The apparatus comprises a case provided with a cover and piercing holes at opposite sides of the case such that a steel wire can pass through the case, a plurality of driving motors provided at one side of the exterior of the case, rotating members located at an inside of the case and connected to the driving motors, respectively, by belts serving to rotate them, support plates for supporting the rotating members, and cleaning members coupled to the rotating member and adapted to provide a path through which the steel wire passes. The dry lubricant on the surface of the steel wire can be effectively cleaned by friction between the lubricant on the steel wire and the cleaning members.

    摘要翻译: 本文公开了一种用于清洁干式拉丝用润滑剂的设备。 该装置包括在外壳的相对侧设置有盖和穿孔的壳体,使得钢丝可以穿过壳体,设置在壳体的外部一侧的多个驱动马达,位于壳体的外部的旋转构件 在壳体的内部,分别通过用于旋转它们的带,用于支撑旋转构件的支撑板和与旋转构件联接的适于提供钢丝通过的路径的清洁构件分别连接到驱动马达。 可以通过钢丝上的润滑剂与清洁部件之间的摩擦力有效地清洁钢丝表面的干性润滑剂。

    Lubricant cleansing apparatus for dry-type wire drawing
    2.
    发明申请
    Lubricant cleansing apparatus for dry-type wire drawing 失效
    干式拉丝用润滑剂清洗装置

    公开(公告)号:US20050198762A1

    公开(公告)日:2005-09-15

    申请号:US10916843

    申请日:2004-08-12

    IPC分类号: B21C43/02 B08B5/00 B21C43/00

    CPC分类号: B21C9/00 B21C43/02

    摘要: Disclosed herein is an apparatus for cleaning a lubricant for dry-type wire drawing. The apparatus comprises a case provided with a cover and piercing holes at opposite sides of the case such that a steel wire can pass through the case, a plurality of driving motors provided at one side of the exterior of the case, rotating members located at an inside of the case and connected to the driving motors, respectively, by belts serving to rotate them, support plates for supporting the rotating members, and cleaning members coupled to the rotating member and adapted to provide a path through which the steel wire passes. The dry lubricant on the surface of the steel wire can be effectively cleaned by friction between the lubricant on the steel wire and the cleaning members.

    摘要翻译: 本文公开了一种用于清洁干式拉丝用润滑剂的设备。 该装置包括在外壳的相对侧设置有盖和穿孔的壳体,使得钢丝可以穿过壳体,设置在壳体的外部一侧的多个驱动马达,位于壳体的外部的旋转构件 在壳体的内部,分别通过用于旋转它们的带,用于支撑旋转构件的支撑板和与旋转构件联接的适于提供钢丝通过的路径的清洁构件分别连接到驱动马达。 可以通过钢丝上的润滑剂与清洁部件之间的摩擦力有效地清洁钢丝表面的干性润滑剂。

    Apparatus for manufacturing trapezoidal wire using two-set shaping rollers
    3.
    发明申请
    Apparatus for manufacturing trapezoidal wire using two-set shaping rollers 有权
    使用两套成型辊制造梯形钢丝的设备

    公开(公告)号:US20070180883A1

    公开(公告)日:2007-08-09

    申请号:US11645765

    申请日:2006-12-27

    IPC分类号: B21B13/08

    CPC分类号: B21F15/04 B21B1/16 B21B31/02

    摘要: An apparatus for manufacturing a trapezoidal wire using two-set shaping rollers has a body rotating about a central axis at a predetermined speed, a plurality of first shaping roller sets installed along an outer circumference of the body, each first shaping roller set including an upper roller and a lower roller and a shaping portion, into which a wire is inserted to be processed, between the upper roller and the lower roller, and a plurality of second shaping roller sets arranged after the first shaping roller sets along the outer circumference of the body and in a direction in which the wire moves, each second shaping roller set comprising an upper roller and a lower roller and a shaping portion, into which the wire is inserted to be processed again, between the upper roller and the lower roller, wherein wires processed by the first and second shaping roller sets while passing therethrough are stranded by the rotating body. The apparatus can significantly improve a wire processing rate while reducing a defect rate.

    摘要翻译: 使用两套成形辊制造梯形线的装置具有以预定速度围绕中心轴旋转的主体,沿着主体的外周安装的多个第一成形辊组,每个第一成形辊组包括上部 辊和下辊以及在上辊和下辊之间插入待加工的导线的成形部分,以及多个第二成形辊组,其布置在第一成形辊之后沿着第二成形辊的外周设置 并且在所述线移动的方向上,包括上辊和下辊的每个第二成形辊组和成形部分,所述导线插入所述成形部分以在所述上辊和所述下辊之间再次被加工,其中 由第一和第二成形辊组件在通过过程中加工的线被旋转体绞合。 该装置可以显着地提高线处理速率同时降低缺陷率。

    Apparatus for manufacturing trapezoidal wire using two-set shaping rollers
    4.
    发明授权
    Apparatus for manufacturing trapezoidal wire using two-set shaping rollers 有权
    使用两套成型辊制造梯形钢丝的设备

    公开(公告)号:US07322220B2

    公开(公告)日:2008-01-29

    申请号:US11645765

    申请日:2006-12-27

    IPC分类号: B21B13/08 D02G3/36 D07B1/16

    CPC分类号: B21F15/04 B21B1/16 B21B31/02

    摘要: An apparatus for manufacturing a trapezoidal wire using two-set shaping rollers has a body rotating about a central axis at a predetermined speed, a plurality of first shaping roller sets installed along an outer circumference of the body, each first shaping roller set including an upper roller and a lower roller and a shaping portion, into which a wire is inserted to be processed, between the upper roller and the lower roller, and a plurality of second shaping roller sets arranged after the first shaping roller sets along the outer circumference of the body and in a direction in which the wire moves, each second shaping roller set comprising an upper roller and a lower roller and a shaping portion, into which the wire is inserted to be processed again, between the upper roller and the lower roller, wherein wires processed by the first and second shaping roller sets while passing therethrough are stranded by the rotating body. The apparatus can significantly improve a wire processing rate while reducing a defect rate.

    摘要翻译: 使用两套成形辊制造梯形线的装置具有以预定速度围绕中心轴旋转的主体,沿着主体的外周安装的多个第一成形辊组,每个第一成形辊组包括上部 辊和下辊以及在上辊和下辊之间插入待加工的导线的成形部分,以及多个第二成形辊组,其布置在第一成形辊之后沿着第二成形辊的外周设置 并且在所述线移动的方向上,包括上辊和下辊的每个第二成形辊组和成形部分,所述导线插入所述成形部分以在所述上辊和所述下辊之间再次被加工,其中 由第一和第二成形辊组件在通过过程中加工的线被旋转体绞合。 该装置可以显着地提高线处理速率同时降低缺陷率。

    EEPROM devices and methods of operating and fabricating the same
    6.
    发明授权
    EEPROM devices and methods of operating and fabricating the same 失效
    EEPROM器件及其操作和制造方法

    公开(公告)号:US07593261B2

    公开(公告)日:2009-09-22

    申请号:US11643837

    申请日:2006-12-22

    IPC分类号: G11C11/03

    摘要: An electrically erasable and programmable read-only memory (EEPROM) is provided. The EEPROM includes a semiconductor substrate including spaced apart first, second and third active regions, a common floating gate traversing over the first through third active regions, source/drain regions formed in the third active region on opposite sides of the floating gate, a first interconnect connected to the first active region, a second interconnect connected to the second active region, and a third interconnect connected to either one of the source/drain regions.

    摘要翻译: 提供电可擦除和可编程只读存储器(EEPROM)。 EEPROM包括半导体衬底,其包括间隔开的第一,第二和第三有源区域,跨越第一至第三有源区域的公共浮动栅极,形成在浮置栅极的相对侧上的第三有源区域中的源极/漏极区域,第一 连接到第一有源区的互连,连接到第二有源区的第二互连以及连接到源/漏区中的任一个的第三互连。

    Cell structure of EPROM device and method for fabricating the same
    7.
    发明授权
    Cell structure of EPROM device and method for fabricating the same 有权
    EPROM器件的单元结构及其制造方法

    公开(公告)号:US07348241B2

    公开(公告)日:2008-03-25

    申请号:US11384727

    申请日:2006-03-20

    IPC分类号: H01L21/336

    摘要: Provided are a cell structure of an EPROM device and a method for fabricating the same. The cell structure includes a gate stack, which includes a first floating gate, an insulating pattern including a nitride layer, and a control gate that are sequentially stacked on a semiconductor substrate, and includes a window for exposing the top surface or both sidewalls of the first floating gate on both sides of the control gate, so that charges of the first floating gate can be erased by ultraviolet rays. The cell structure further includes a floating gate transistor, which includes a gate insulating layer formed on the semiconductor substrate, a second floating gate that is formed on the gate insulating layer and is connected to the first floating gate in the gate stack, and a source/drain that is formed in the semiconductor substrate so as to be aligned to the second floating gate. In the cell structure, the window is formed on the top surface or both sidewalls of the first floating gate of the gate stack. Thus, ultraviolet rays can penetrate through the window and easily erase charges of the programmed cell.

    摘要翻译: 提供EPROM器件的单元结构及其制造方法。 电池结构包括栅极堆叠,其包括第一浮置栅极,包括氮化物层的绝缘图案和顺序地堆叠在半导体衬底上的控制栅极,并且包括用于暴露所述顶部表面或两个侧壁的窗口 第一个浮动栅极位于控制栅极的两侧,使得第一个浮动栅极的电荷可以被紫外线消除。 电池结构还包括浮栅晶体管,其包括形成在半导体衬底上的栅极绝缘层,形成在栅极绝缘层上并连接到栅堆叠中的第一浮栅的第二浮栅,以及源极 /漏极,其形成在半导体衬底中以便与第二浮栅对准。 在电池结构中,窗口形成在栅堆叠的第一浮栅的顶表面或两个侧壁上。 因此,紫外线可以穿过窗口并容易地擦除编程单元的电荷。

    Transistors including gate dielectric layers having different nitrogen concentrations and related structures

    公开(公告)号:US06653180B2

    公开(公告)日:2003-11-25

    申请号:US10140711

    申请日:2002-05-08

    申请人: Tae-jung Lee

    发明人: Tae-jung Lee

    IPC分类号: H01L2100

    CPC分类号: H01L21/823857

    摘要: An electronic device on a semiconductor substrate can include first and second field effect transistors on a substrate. In particular, the first field effect transistor includes a first gate dielectric layer having a first nitrogen concentration, and the second field effect transistor includes a second gate dielectric layer having a second nitrogen concentration lower than the first nitrogen concentration. More particularly, the first field effect transistor can be a PMOS transistor, and the second field effect transistor can be an NMOS transistor. Related methods are also discussed.

    Semiconductor device having electrostatic discharge protection circuit and method of manufacturing the same
    9.
    发明授权
    Semiconductor device having electrostatic discharge protection circuit and method of manufacturing the same 有权
    具有静电放电保护电路的半导体装置及其制造方法

    公开(公告)号:US08143690B2

    公开(公告)日:2012-03-27

    申请号:US12219336

    申请日:2008-07-21

    IPC分类号: H01L27/06

    CPC分类号: H01L27/0814 H01L27/0255

    摘要: Semiconductor device having an on-chip type electrostatic discharge (ESD) protection circuit and a method of manufacturing the same are provided. The on-chip type ESD protection circuit may include a first junction diode having a first conductive type region contacting a second conductive type region in a semiconductor substrate, and a first schottky diode having a metallic material layer arranged on and contacting the first conductive type region of the semiconductor substrate.

    摘要翻译: 提供具有片上型静电放电(ESD)保护电路的半导体器件及其制造方法。 片上型ESD保护电路可以包括具有与半导体衬底中的第二导电类型区域接触的第一导电类型区域的第一结二极管和具有布置在第一导电类型区域上并与第一导电类型区域接触的金属材料层的第一肖特基二极管 的半导体衬底。

    Method of fabricating semiconductor integrated circuit device
    10.
    发明申请
    Method of fabricating semiconductor integrated circuit device 有权
    制造半导体集成电路器件的方法

    公开(公告)号:US20080057689A1

    公开(公告)日:2008-03-06

    申请号:US11977039

    申请日:2007-10-23

    IPC分类号: H01L21/3205

    摘要: Provided are a semiconductor integrated device and a method for fabricating the same. The semiconductor integrated circuit includes a semiconductor substrate including a first dopant, a first conductive layer pattern formed on the semiconductor substrate, an interlayer dielectric layer formed on the first conductive layer pattern, a second conductive layer pattern formed on the interlayer dielectric layer, and a first vacuum ultraviolet (VUV) blocking layer which blocks a VUV ray radiated to the semiconductor substrate.

    摘要翻译: 提供一种半导体集成器件及其制造方法。 半导体集成电路包括:半导体衬底,包括第一掺杂剂,形成在半导体衬底上的第一导电层图案,形成在第一导电层图案上的层间绝缘层,形成在层间绝缘层上的第二导电层图案;以及 第一真空紫外线(VUV)阻挡层,其阻挡辐射到半导体衬底的VUV射线。