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    Pressure sensor for electronic skin and fabrication method of pressure sensor for electronic skin
    1.
    发明授权
    Pressure sensor for electronic skin and fabrication method of pressure sensor for electronic skin 失效
    电子皮肤压力传感器及电子皮肤压力传感器的制造方法

    公开(公告)号：US07645398B2

    公开(公告)日：2010-01-12

    申请号：US11635067

    申请日：2006-12-07

    申请人： Seong-Hyun Kim ,  Taehyoung Zyung ,  Jae Bon Koo ,  Jung Hun Lee ,  Sang Chul Lim

    发明人： Seong-Hyun Kim ,  Taehyoung Zyung ,  Jae Bon Koo ,  Jung Hun Lee ,  Sang Chul Lim

    IPC分类号： H01B1/00 ,  G01D7/00 ,  G01L3/00

    CPC分类号： G01L1/20 ,  G01L1/205

    摘要： Provided is a pressure sensor for electronic skin. The pressure sensor measures pressure levels, and includes conductive rubber, electrodes, and elastic rubber. The conductive rubber has conductivity that increases when a pressure exceeding a predetermined pressure is applied thereto. The electrodes are formed on either side surface of the conductive rubber to measure current flowing through the conductive rubber. The elastic rubber is formed on a top surface of one of the electrodes to disperse pressure applied to the conductive rubber.

    摘要翻译： 提供了一种用于电子皮肤的压力传感器。 压力传感器测量压力水平，包括导电橡胶，电极和弹性橡胶。 当施加超过预定压力的压力时，导电橡胶具有增加的导电性。 电极形成在导电橡胶的任一侧表面上，以测量流过导电橡胶的电流。 弹性橡胶形成在一个电极的顶表面上以分散施加到导电橡胶上的压力。

    Inverter
    2.
    发明授权
    Inverter 失效
    逆变器

    公开(公告)号：US07687807B2

    公开(公告)日：2010-03-30

    申请号：US11834044

    申请日：2007-08-06

    申请人： Jae Bon Koo ,  Seong Hyun Kim ,  Kyung Soo Suh ,  Chan Hoe Ku ,  Sang Chul Lim ,  Jung Hun Lee

    发明人： Jae Bon Koo ,  Seong Hyun Kim ,  Kyung Soo Suh ,  Chan Hoe Ku ,  Sang Chul Lim ,  Jung Hun Lee

    IPC分类号： H01L31/00

    CPC分类号： H01L27/281 ,  H01L27/283

    摘要： Provided are a structure and fabricating method of a new inverter for controlling a threshold voltage of each location when an inverter circuit is manufactured using an organic semiconductor on a plastic substrate.In general, p-type organic semiconductor is stable. Accordingly, when the inverter is formed of only the p-type semiconductor, a D-inverter composed of a depletion load and an enhancement driver has large gains, wide swing width and low power consumption, which is more preferable than an E-inverter composed of an enhancement load and an enhancement driver. However, it is impossible to form a depletion transistor and an enhancement transistor on the same substrate while controlling them by locations.To overcome such a difficulty, the structure of the inverter in which a bottom gate organic semiconductor transistor showing enhancement type characteristics is used as a driver transistor, and a top gate organic semiconductor transistor showing depletion type characteristics is used as a load transistor, and a manufacturing method thereof are proposed. According to this structure, a passivation effect of an organic semiconductor may be additionally obtained by a second insulating layer and a second gate electrode material which are on top of the organic semiconductor, and a high degree of integration may also be improved.

    摘要翻译： 提供了当在塑料基板上使用有机半导体制造逆变器电路时，用于控制每个位置的阈值电压的新型逆变器的结构和制造方法。 通常，p型有机半导体是稳定的。 因此，当逆变器仅由p型半导体形成时，由耗尽负载和增强型驱动器构成的D逆变器具有大的增益，宽的摆幅宽度和低功耗，这比组成的E变换器更优选 的增强负载和增强驱动器。 然而，不可能在相同的衬底上形成耗尽晶体管和增强晶体管，同时通过位置来控制它们。 为了克服这样的困难，将使用显示增强型特性的底栅有机半导体晶体管作为驱动晶体管的逆变器的结构和显示耗尽型特性的顶栅有机半导体晶体管用作负载晶体管，并且 提出了其制造方法。 根据该结构，可以通过位于有机半导体顶部的第二绝缘层和第二栅极电极材料另外获得有机半导体的钝化效果，并且还可以提高高集成度。

    Organic inverter including surface-treated layer and method of manufacturing the same
    3.
    发明授权
    Organic inverter including surface-treated layer and method of manufacturing the same 失效
    有机逆变器包括表面处理层及其制造方法

    公开(公告)号：US08039295B2

    公开(公告)日：2011-10-18

    申请号：US12906457

    申请日：2010-10-18

    申请人： Jae Bon Koo ,  Kyung Soo Suh ,  Seong Hyun Kim

    发明人： Jae Bon Koo ,  Kyung Soo Suh ,  Seong Hyun Kim

    IPC分类号： H01L51/40

    CPC分类号： H01L27/283 ,  H01L51/0545

    摘要： An organic inverter and a method of manufacturing the same are provided, which regulates threshold voltages depending on positions when an inverter circuit is manufactured on a substrate using an organic semiconductor. To form a depletion load transistor and an enhancement driver transistor at adjacent positions of the same substrate, the surface of the substrate is selectively treated by positions or selectively applied by self-assembly monolayer treatment. Thus, a D-inverter having a combination of a depletion mode and an enhancement mode is more easily realized than a conventional method using a transistor size effect. Also, the D-inverter can be realized even with the same W/L ratio, thereby increasing integration density. That is, the W/L ratio does not need to be increased to manufacture a depletion load transistor, thereby improving integration density.

    摘要翻译： 提供一种有机逆变器及其制造方法，其根据使用有机半导体在基板上制造逆变器电路时的位置来调节阈值电压。 为了在同一衬底的相邻位置处形成耗尽负载晶体管和增强驱动晶体管，衬底的表面通过位置选择性地处理或通过自组装单层处理选择性地施加。 因此，与使用晶体管尺寸效应的传统方法相比，更容易实现具有耗尽模式和增强模式的组合的D逆变器。 此外，即使以相同的W / L比率也能够实现D逆变器，从而提高集成密度。 也就是说，不需要增加W / L比来制造耗尽负载晶体管，从而提高集成密度。

    Organic inverter including surface-treated layer and method of manufacturing the same
    4.
    发明授权
    Organic inverter including surface-treated layer and method of manufacturing the same 失效
    有机逆变器包括表面处理层及其制造方法

    公开(公告)号：US07842952B2

    公开(公告)日：2010-11-30

    申请号：US11931461

    申请日：2007-10-31

    申请人： Jae Bon Koo ,  Kyung Soo Suh ,  Seong Hyun Kim

    发明人： Jae Bon Koo ,  Kyung Soo Suh ,  Seong Hyun Kim

    IPC分类号： H01L31/00

    CPC分类号： H01L27/283 ,  H01L51/0545

    摘要： An organic inverter and a method of manufacturing the same are provided, which regulates threshold voltages depending on positions when an inverter circuit is manufactured on a substrate using an organic semiconductor. To form a depletion load transistor and an enhancement driver transistor at adjacent positions of the same substrate, the surface of the substrate is selectively treated by positions or selectively applied by self-assembly monolayer treatment. Thus, a D-inverter having a combination of a depletion mode and an enhancement mode is more easily realized than a conventional method using a transistor size effect. Also, the D-inverter can be realized even with the same W/L ratio, thereby increasing integration density. That is, the W/L ratio does not need to be increased to manufacture a depletion load transistor, thereby improving integration density.

    摘要翻译： 提供一种有机逆变器及其制造方法，其根据使用有机半导体在基板上制造逆变器电路时的位置来调节阈值电压。 为了在同一衬底的相邻位置处形成耗尽负载晶体管和增强驱动晶体管，衬底的表面通过位置选择性地处理或通过自组装单层处理选择性地施加。 因此，与使用晶体管尺寸效应的传统方法相比，更容易实现具有耗尽模式和增强模式的组合的D逆变器。 此外，即使以相同的W / L比率也能够实现D逆变器，从而提高集成密度。 也就是说，不需要增加W / L比来制造耗尽负载晶体管，从而提高集成密度。

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    9.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
    半导体器件的制造方法

    公开(公告)号：US20110092032A1

    公开(公告)日：2011-04-21

    申请号：US12766958

    申请日：2010-04-26

    申请人： Jae Bon Koo ,  Seung Youl Kang

    发明人： Jae Bon Koo ,  Seung Youl Kang

    IPC分类号： H01L21/336

    CPC分类号： H01L29/78603 ,  H01L21/84

    摘要： Provided is a manufacturing methods of a semiconductor device. The methods includes: forming an active layer on a first substrate; bonding a top surface of the active layer with a second substrate and separating the active layer from the first substrate; forming conductive impurity regions corresponding to source and drain regions of the active layer bonded on the second substrate; bonding a third substrate on a bottom surface of the active layer and removing the second substrate; and forming a gate electrode on a top between the conductive impurity regions of the active layer bonded on the third substrate and forming source and drain electrodes on the conductive impurity regions.

    摘要翻译： 提供半导体器件的制造方法。 所述方法包括：在第一基板上形成有源层; 将有源层的顶表面与第二衬底结合并将有源层与第一衬底分离; 形成对应于结合在所述第二基板上的所述有源层的源区和漏区的导电杂质区; 将第三衬底接合在有源层的底表面上并移除第二衬底; 以及在结合在第三基板上的有源层的导电杂质区之间的顶部上形成栅电极，并在导电杂质区上形成源电极和漏电极。

    METHOD OF AND APPARATUS FOR FORMING A METAL PATTERN
    10.
    发明申请
    METHOD OF AND APPARATUS FOR FORMING A METAL PATTERN 审中-公开
    用于形成金属图案的方法和装置

    公开(公告)号：US20120141665A1

    公开(公告)日：2012-06-07

    申请号：US13309807

    申请日：2011-12-02

    申请人： Tae-Youb KIM ,  Kang-Jun Baeg ,  In-Kyu You ,  Minseok Kim ,  Jae Bon Koo

    发明人： Tae-Youb KIM ,  Kang-Jun Baeg ,  In-Kyu You ,  Minseok Kim ,  Jae Bon Koo

    IPC分类号： H05K3/02 ,  B05C5/00

    CPC分类号： B41F17/26 ,  B05C1/0808

    摘要： Provided are methods of and apparatuses for forming a metal pattern. In the method, an initiator and a metal pattern are sequentially combined on a previously-formed bonding agent pattern improving adhesion and/or junction properties between the substrate and the metal. The bonding agent pattern may be formed using a reverse offset printing method. The metal pattern may be formed using an electroless electrochemical plating method. The metal pattern can be formed with improved uniformity in thickness and planar area.

    摘要翻译： 提供了用于形成金属图案的方法和装置。 在该方法中，引发剂和金属图案依次组合在预先形成的粘合剂图案上，从而提高基材和金属之间的粘合性和/或结合性。 粘合剂图案可以使用反胶版印刷法形成。 金属图案可以使用无电镀电镀法形成。 可以形成具有改善的厚度均匀性和平坦面积的金属图案。