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    RECORDING MEDIUM AND MANUFACTURING METHOD OF RECORDING MEDIUM
    3.
    发明申请
    RECORDING MEDIUM AND MANUFACTURING METHOD OF RECORDING MEDIUM 审中-公开
    记录介质和记录介质的制造方法

    公开(公告)号：US20100215891A1

    公开(公告)日：2010-08-26

    申请号：US12738465

    申请日：2008-10-16

    申请人： Jin Hong Kim ,  Jun Seok Lee ,  Jung Shik Lim ,  Hun Seo

    发明人： Jin Hong Kim ,  Jun Seok Lee ,  Jung Shik Lim ,  Hun Seo

    IPC分类号： B32B7/02 ,  C23C16/00

    CPC分类号： G11B7/254 ,  G11B7/24056 ,  G11B2007/25411 ,  G11B2007/25417

    摘要： A recording medium and a method for manufacturing the same are disclosed. More particularly, a recording medium having a high density and high energy transfer efficiency and a method for manufacturing the same are disclosed. The recording medium includes a substrate, a recording layer formed on the substrate, a first cover layer having a first hardness formed on the recording layer, and a second cover layer having a second hardness arranged on the first cover layer.

    摘要翻译： 公开了一种记录介质及其制造方法。 更具体地，公开了具有高密度和高能量转移效率的记录介质及其制造方法。 记录介质包括基板，形成在基板上的记录层，具有形成在记录层上的第一硬度的第一覆盖层和布置在第一覆盖层上的具有第二硬度的第二覆盖层。

    Lipid-free scaffolds for human volume replacement or cell culture and use thereof
    4.
    发明授权
    Lipid-free scaffolds for human volume replacement or cell culture and use thereof 有权

    公开(公告)号：US10549010B2

    公开(公告)日：2020-02-04

    申请号：US12601518

    申请日：2008-03-24

    申请人： Heeyoung Lee ,  Hyunjin Yang ,  Jun Seok Lee ,  Ji Suk Choi

    发明人： Heeyoung Lee ,  Hyunjin Yang ,  Jun Seok Lee ,  Ji Suk Choi

    IPC分类号： A61L27/36

    摘要： The present invention relates to lipid removed scaffolds(lipid-free scaffolds) for human tissue volume replacement or cell culture. More particularly, the present invention relates to a method for preparing lipid removed scaffolds(lipid-free scaffolds) for human tissue volume replacement or cell culture, the method comprising the steps of: fragmenting fat tissue to isolate lipids by ultrasonic treatment or high pressure nozzle spray; removing the isolated lipids and fat tissue from which lipids were not isolated to sterilize. According to the present invention, lipids are removed from fat tissue only by physical treatment to maintain the volume thereof and microstructures such as cellular membrane as much as possible and thus the inventive scaffolds are useful for human tissue volume replacement.

    VALVE FOR ENGINE AND METHOD FOR TREATING SURFACE THEREOF
    5.
    发明申请
    VALVE FOR ENGINE AND METHOD FOR TREATING SURFACE THEREOF 有权
    发动机用阀门及其表面处理方法

    公开(公告)号：US20130220262A1

    公开(公告)日：2013-08-29

    申请号：US13482150

    申请日：2012-05-29

    申请人： Young Joon Kang ,  Sung Chul Cha ,  Chang Hyun Shin ,  Jun Seok Lee

    发明人： Young Joon Kang ,  Sung Chul Cha ,  Chang Hyun Shin ,  Jun Seok Lee

    IPC分类号： F01L3/04 ,  B05D1/36

    CPC分类号： C23C14/0641 ,  C23C14/025 ,  C23C14/0664 ,  C23C28/30 ,  C23C28/32 ,  C23C28/321 ,  C23C28/322 ,  C23C28/34 ,  F01L3/04 ,  F01L3/10 ,  F01L2103/01

    摘要： The present invention provides a valve for an engine and a method for treating the surface thereof. The valve for the engine includes a buffer layer, an intermediate layer, a TiAlN/CrN first nanostructured multilayer, and a TiAlCN/CrCN second nanostructured multilayer. The buffer layer is coated over a surface of a stem part as a lowermost layer and is formed of Ti or Cr. The intermediate layer is coated over the buffer layer and is formed of CrN, TiN, or TiCN. The TiAlN/CrN first nanostructured multilayer is coated over the intermediate layer. The TiAlCN/CrCN second nanostructured multilayer is coated over the TiAlN/CrN first nanostructured multilayer as an uppermost layer.

    摘要翻译： 本发明提供一种发动机用阀及其表面处理方法。 用于发动机的阀包括缓冲层，中间层，TiAlN / CrN第一纳米结构多层和TiAlCN / CrCN第二纳米结构多层。 缓冲层涂覆在作为最下层的杆部分的表面上，并由Ti或Cr形成。 中间层涂覆在缓冲层上，由CrN，TiN或TiCN形成。 TiAlN / CrN第一纳米结构多层涂覆在中间层上。 TiAlCN / CrCN第二纳米结构多层涂覆在TiAlN / CrN第一纳米结构多层作为最上层。

    Mask pattern of semiconductor device and manufacturing method thereof
    6.
    发明授权
    Mask pattern of semiconductor device and manufacturing method thereof 失效
    半导体器件的掩模图案及其制造方法

    公开(公告)号：US07803504B2

    公开(公告)日：2010-09-28

    申请号：US11880395

    申请日：2007-07-20

    申请人： Jun Seok Lee

    发明人： Jun Seok Lee

    IPC分类号： G03F1/00

    CPC分类号： G03F1/36

    摘要： Provided is a mask pattern of a semiconductor device. The mask pattern includes a plurality of main patterns and a plurality of assistance patterns. The main patterns are adjacent to one another. The assistance pattern is disposed on at least one of an end portion and a middle portion of each of the main patterns and has a line width greater than that of the main pattern. The assistance patterns are staggered.

    摘要翻译： 提供半导体器件的掩模图案。 掩模图案包括多个主图案和多个辅助图案。 主要图案彼此相邻。 辅助图案设置在每个主图案的端部和中间部分中的至少一个上，并且具有大于主图案的线宽的线宽。 援助模式是交错的。

    Phase shift mask and fabricating method thereof
    7.
    发明授权
    Phase shift mask and fabricating method thereof 失效
    相移掩模及其制造方法

    公开(公告)号：US07332098B2

    公开(公告)日：2008-02-19

    申请号：US11024435

    申请日：2004-12-30

    申请人： Jun Seok Lee

    发明人： Jun Seok Lee

    IPC分类号： B44C1/22 ,  G03F1/00

    CPC分类号： G03F1/32 ,  G03F1/28

    摘要： The present invention provides a phase shift mask and fabricating method thereof, by which a critical dimension of a semiconductor pattern can be accurately formed in a manner of compensating a boundary step difference between an active area and an insulating layer. The present invention includes a transparent substrate and at least two halftone layers on the transparent substrate to have light transmittance lower than that of the transparent substrate, each comprising front and rear parts differing in thickness from each other.

    摘要翻译： 本发明提供了一种相移掩模及其制造方法，通过该相移掩模及其制造方法，可以以补偿有源区和绝缘层之间的边界阶跃差的方式精确地形成半导体图案的临界尺寸。 本发明包括透明基板和透明基板上的至少两个半色调层，其透光率低于透明基板的透光率，每个半透明层包括彼此厚度不同的前部和后部。

    Phase shifting photomask fabrication method
    8.
    发明授权
    Phase shifting photomask fabrication method 失效
    相移光掩模制造方法

    公开(公告)号：US5932378A

    公开(公告)日：1999-08-03

    申请号：US41600

    申请日：1998-03-13

    申请人： Jun Seok Lee

    发明人： Jun Seok Lee

    IPC分类号： G03F1/29 ,  G03F1/30 ,  G03F1/36 ,  G03F1/68 ,  H01L21/027 ,  G03F9/00

    CPC分类号： G03F1/30 ,  G03F1/29

    摘要： A phase shifting photomask fabrication method includes the steps of forming a recess in an upper surface of a transparent substrate having a depth sufficient to shift a phase of light, forming an opaque layer on the transparent substrate including the recess, forming a first patterning layer having a plurality of openings on the opaque layer, forming a plurality of side wall spacers on each side wall of the first patterning layer, etching the opaque layer by using the side wall spacers and exposing the transparent substrate, forming a second patterning layer on the exposed transparent substrate exposing a portion of the transparent substrate by selectively etching portions covered by the first patterning layer and the opaque layer, etching the exposed transparent substrate to a depth sufficient to effect a phase shift, and removing the side wall spacers and the second patterning layer. This method eliminates a micro loading effect by separately forming a wider main opening pattern unit and a narrower sub-opening pattern unit, and accurately controls the phase shift, improving reliability of the photomask.

    摘要翻译： 相移光掩模制造方法包括以下步骤：在透明基板的上表面中形成具有足以移动相位的深度的凹部，在包括凹部的透明基板上形成不透明层，形成具有 在所述不透明层上的多个开口，在所述第一图案化层的每个侧壁上形成多个侧壁间隔物，通过使用所述侧壁间隔物来蚀刻所述不透明层并暴露所述透明基板，在所述暴露的所述第二图案形成层上形成第二图案形成层 透明基板通过选择性地蚀刻由第一图案化层和不透明层覆盖的部分来暴露透明基板的一部分，将暴露的透明基板蚀刻到足以实现相移的深度，以及去除侧壁间隔物和第二图案形成层 。 该方法通过分开形成更宽的主开口图案单元和较窄的子开口图案单元来消除微加载效应，并且精确地控制相移，提高光掩模的可靠性。

    Phase shift mask and method for manufacturing same
    9.
    发明授权
    Phase shift mask and method for manufacturing same 失效
    相移掩模及其制造方法

    公开(公告)号：US5856049A

    公开(公告)日：1999-01-05

    申请号：US788104

    申请日：1997-01-23

    申请人： Jun Seok Lee

    发明人： Jun Seok Lee

    IPC分类号： G03F1/29 ,  G03F1/32 ,  G03F1/68 ,  H01L21/027 ,  G03F9/00

    CPC分类号： G03F1/29 ,  G03F1/32

    摘要： A phase shift mask device includes a transparent substrate; a first rim type part on the transparent substrate, the first rim type mask part including a first phase shift layer, a second phase shift layer adjacent the first phase shift layer, and a light transparent portion adjacent the second phase shift layer; a first outrigger type mask part on the transparent substrate spaced from the first rim type mask part by a first distance, the first outrigger type mask part including a first phase shift layer, a second phase shift layer adjacent the first phase shift layer, a shielding layer adjacent the first phase shift layer, and a light transparent portion adjacent the second phase shift layer; a second rim type mask part on the transparent substrate having a diagonal relationship with respect to the first rim type mask, the second rim type mask part including a first phase shift layer, a second phase shift layer adjacent the first phase shift layer, and a light transparent layer portion adjacent the second phase shift layer; and a second outrigger type mask part on the transparent substrate having a diagonal relationship with respect to the first outrigger type mask part, the second outrigger type mask part including a first phase shift layer, a second phase shift layer adjacent the first phase shift layer, a shielding layer adjacent the first phase shift layer, and a light transparent portion adjacent the second phase shift layer.

    摘要翻译： 相移掩模装置包括透明基板; 所述透明基板上的第一边缘型部分，所述第一边缘型掩模部分包括第一相移层，与所述第一相移层相邻的第二相移层和与所述第二相移层相邻的透光部分; 所述透明基板上的第一外伸支架型掩模部分与所述第一边缘型掩模部分间隔开第一距离，所述第一外伸支架型掩模部分包括第一相移层，与所述第一相移层相邻的第二相移层， 邻近第一相移层的光透射部分和与第二相移层相邻的透光部分; 所述透明基板上的第二边缘型掩模部分相对于所述第一边缘型掩模具有对角关系，所述第二边缘型掩模部分包括第一相移层，与所述第一相移层相邻的第二相移层，以及 与第二相移层相邻的透光层部分; 以及在所述透明基板上具有与所述第一外伸支架型掩模部对角关系的第二外伸支架型掩模部，所述第二外伸支架型掩模部包括第一相移层，与所述第一相移层相邻的第二相移层， 与第一相移层相邻的屏蔽层和与第二相移层相邻的透光部分。

    Method of manufacturing phase-shifting mask comprising a light shield pattern on a phase-shifting attenuatting layer
    10.
    发明授权
    Method of manufacturing phase-shifting mask comprising a light shield pattern on a phase-shifting attenuatting layer 失效
    一种制造相移掩模的方法，包括在相移衰减层上的遮光图案

    公开(公告)号：US5725969A

    公开(公告)日：1998-03-10

    申请号：US576897

    申请日：1995-12-22

    申请人： Jun Seok Lee

    发明人： Jun Seok Lee

    IPC分类号： G03F1/29 ,  G03F1/32 ,  G03F1/36 ,  G03F1/68 ,  H01L21/027 ,  G03F9/00

    CPC分类号： G03F1/32 ,  G03F1/26 ,  G03F1/36

    摘要： A phase-shifting mask which has a supplementary pattern arranged for preventing unwanted constructive interference of light caused when isolated patterns (transparent regions) are arranged adjacently. Also, a method for manufacturing such a phase-shifting mask, including the steps of providing a transparent substrate, a phase-shifting layer having transparent regions formed on the transparent substrate, and a supplementary light shielding patterns formed on the phase-shifting layer between the transparent regions.

    摘要翻译： 一种移相掩模，其具有布置用于防止在隔离图案（透明区域）相邻布置时引起的光的不希望的建构性干扰的辅助图案。 另外，制造这样的移相掩模的方法包括以下步骤：提供透明基板，形成在透明基板上的透明区域的移相层和形成在移相层之间的辅助遮光图案， 透明区域。