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    High stereospecific polybutylene polymer and highly active process for preparation thereof
    1.
    发明申请
    High stereospecific polybutylene polymer and highly active process for preparation thereof 有权
    高立体特异性聚丁烯聚合物和高活性的制备方法

    公开(公告)号：US20070015862A1

    公开(公告)日：2007-01-18

    申请号：US10569411

    申请日：2004-03-31

    申请人： Seung Hong ,  Min Park ,  Deok Kim ,  Seok Hwang

    发明人： Seung Hong ,  Min Park ,  Deok Kim ,  Seok Hwang

    IPC分类号： C08F290/04

    CPC分类号： C08F110/08 ,  C08F10/00 ,  Y10S526/905 ,  C08F4/6565 ,  C08F4/651 ,  C08F2500/15 ,  C08F2500/03 ,  C08F2500/04 ,  C08F2500/12 ,  C08F2500/08

    摘要： Disclosed is a process for the preparation of a high stereospecific (isotactic) polybutylene polymer comprising the step of polymerizing a reactive monomer, 1-butene, which is used or is not used as a solvent, in the presence of catalyst and inert gas. According to the present invention, it is possible to prepare a high stereospecific polybutylene polymer in much higher activity than that of any other known processes for the preparation of a high stereospecific polybutylene polymer. The high stereospecific polybutylene polymer according to the present invention is a homopolymer of 1-butene, or a copolymer containing a-olefin and up to 40% by weight of a comonomer, wherein titanium in the catalyst residues is not detected in the ppm level, stereospecificity (Isotactic Index, mmmm %) determined by 13C-NMR is 96 or more, molecular weight distribution (Mw/Mn) is 3-6, and molecular weight distribution (Mw/Mn) can be controlled to 8 or more.

    摘要翻译： 公开了一种制备高立体定向（全同立构）聚丁烯聚合物的方法，包括在催化剂和惰性气体存在下使用或不用作溶剂的反应性单体1-丁烯聚合的步骤。 根据本发明，可以制备比用于制备高立体特异性聚丁烯聚合物的任何其它已知方法高的立体特异性聚丁烯聚合物活性高得多。 根据本发明的高立体特异性聚丁烯聚合物是1-丁烯的均聚物或含有α-烯烃的共聚物和至多40重量％的共聚单体的共聚单体，其中催化剂残余物中的钛在ppm水平上未检测到， 通过13 C-NMR测定的立体定向性（全同立构指数mmmm％）为96以上，分子量分布（Mw / Mn）为3-6，分子量分布（Mw / Mn）可以为 控制在8以上。

    PHOTOVOLTAIC DEVICE
    3.
    发明申请
    PHOTOVOLTAIC DEVICE 有权
    光电器件

    公开(公告)号：US20130175648A1

    公开(公告)日：2013-07-11

    申请号：US13552594

    申请日：2012-07-18

    申请人： Hyun-Jong Kim ,  Czang-Ho Lee ,  Min Park ,  Kyoung-Jin Seo ,  Sang-Won Lee ,  Jun-Ki Hong ,  Byoung-Gook Jeong

    发明人： Hyun-Jong Kim ,  Czang-Ho Lee ,  Min Park ,  Kyoung-Jin Seo ,  Sang-Won Lee ,  Jun-Ki Hong ,  Byoung-Gook Jeong

    IPC分类号： H01L31/0232 ,  H01L31/18

    CPC分类号： H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A photovoltaic device including a semiconductor substrate having a first surface and a second surface, the second surface being opposite to the first surface; a first passivation layer on the first surface; and a second passivation layer on the second surface, wherein each of the first passivation layer and the second passivation layer comprises an aluminum-based compound, is disclosed. A method of preparing a photovoltaic device, the method including: forming a semiconductor substrate to have a first surface and a second surface, the second surface being opposite to the first surface; forming an emitter region and a back surface field (BSF) region at the second surface; and forming a first passivation layer on the first surface and a second passivation layer on the second surface, wherein the first passivation layer and the second passivation layer are formed concurrently, is also disclosed.

    摘要翻译： 一种光电器件，包括具有第一表面和第二表面的半导体衬底，所述第二表面与所述第一表面相对; 第一表面上的第一钝化层; 以及在第二表面上的第二钝化层，其中第一钝化层和第二钝化层中的每一个包括铝基化合物。 一种制备光伏器件的方法，所述方法包括：形成具有第一表面和第二表面的半导体衬底，所述第二表面与所述第一表面相对; 在所述第二表面处形成发射极区域和后表面场（BSF）区域; 并且还公开了在第一表面上形成第一钝化层和第二表面上的第二钝化层，其中同时形成第一钝化层和第二钝化层。

    PHOTOVOLTAIC DEVICE AND METHOD OF MANUFACTURING THE SAME
    8.
    发明申请
    PHOTOVOLTAIC DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    光伏器件及其制造方法

    公开(公告)号：US20100024871A1

    公开(公告)日：2010-02-04

    申请号：US12399441

    申请日：2009-03-06

    申请人： Min-Seok Oh ,  Min Park ,  Czang-Ho Lee ,  Myung-Hun Shin ,  Byoung-Kyu Lee ,  Yuk-Hyun Nam ,  Seung-Jae Jung ,  Mi-Hwa Lim ,  Joon-Young Seo

    发明人： Min-Seok Oh ,  Min Park ,  Czang-Ho Lee ,  Myung-Hun Shin ,  Byoung-Kyu Lee ,  Yuk-Hyun Nam ,  Seung-Jae Jung ,  Mi-Hwa Lim ,  Joon-Young Seo

    IPC分类号： H01L31/00 ,  H01L21/302

    CPC分类号： H01L31/035281 ,  H01L31/02363 ,  Y02E10/50

    摘要： A method of manufacturing a photovoltaic device includes preparing a semiconductor substrate having a light incidence surface receiving light and including single crystalline silicon, wet-etching the light incidence surface to form a plurality of first protrusions on the light incidence surface, dry etching a plurality of surfaces of the first protrusions to form a plurality of second protrusions on the plurality of surfaces of the first protrusions, and forming a semiconductor layer on the light incidence surface. The method further includes forming a first electrode on the semiconductor layer and forming a second electrode on a rear surface of the semiconductor substrate facing the light incidence surface.

    摘要翻译： 一种制造光伏器件的方法包括：制备具有光入射表面并包含单晶硅的半导体衬底，湿式蚀刻光入射表面以在光入射表面上形成多个第一突起，干蚀刻多个 所述第一突起的表面在所述第一突起的多个表面上形成多个第二突起，并且在所述光入射表面上形成半导体层。 该方法还包括在半导体层上形成第一电极，并在与半导体衬底相对的光入射面的后表面上形成第二电极。