摘要:
A method of removing a portion of an oxide layer includes forming first byproducts by reacting a reaction gas with the oxide layer, the reaction gas including fluorine and nitrogen, reacting the reaction gas with the first byproducts to form second byproducts, and removing the second byproducts.
摘要:
A method of removing a portion of an oxide layer includes forming first byproducts by reacting a reaction gas with the oxide layer, the reaction gas including fluorine and nitrogen, reacting the reaction gas with the first byproducts to form second byproducts, and removing the second byproducts.
摘要:
An isolation layer structure includes first to fourth oxide layer patterns. The first and third oxide layer patterns are sequentially formed in a first trench defined by a first recessed top surface of a substrate and sidewalls of gate structures on the substrate in a first region. The first trench has a first width, and the first and third oxide layer patterns have no void therein. The second and fourth oxide layer patterns are sequentially formed in a second trench defined by a second recessed top surface of the substrate and sidewalls of gate structures on the substrate in a second region. The second trench has a second width larger than the first width, and the fourth oxide layer pattern has a void therein.
摘要:
An isolation layer structure includes first to fourth oxide layer patterns. The first and third oxide layer patterns are sequentially formed in a first trench defined by a first recessed top surface of a substrate and sidewalls of gate structures on the substrate in a first region. The first trench has a first width, and the first and third oxide layer patterns have no void therein. The second and fourth oxide layer patterns are sequentially formed in a second trench defined by a second recessed top surface of the substrate and sidewalls of gate structures on the substrate in a second region. The second trench has a second width larger than the first width, and the fourth oxide layer pattern has a void therein.
摘要:
Disclosed herein are a server-sensor network cooperative spatial query processing method and a server using the method. The server-sensor network cooperative spatial query processing method includes the server detecting supplementary information for selecting sensor nodes to be excluded from among a plurality of sensor nodes by performing a preliminary spatial query, before starting a spatial query with the plurality of sensor nodes, and the server requesting the spatial query to the sensor nodes, selected based on the supplementary information, when starting the spatial query with the plurality of sensor nodes.
摘要:
Provided are an apparatus and method for improving transmission control protocol (TCP) performance using path recovery notification over a wireless network. The apparatus includes: a path recovery manager which detects a mobile host recovered from a temporary disconnection state and then outputs a detection signal to notify the detection result; a path recovery notification manager which receives the detection signal and generates an ACK (acknowledgement) packet to inform a transmitting end that the mobile host is recovered; and a first packet transceiver which transmits/receives the generated ACK packet and a data packet. Accordingly, a temporary disconnection state of a wireless network is explicitly informed to a transmitting end so as to transmit only lost packets without performing unnecessary congestion control, thereby improving TCP performance.
摘要:
In existing moving object tracking, there is a great communication load between a terminal and a platform, because the terminal should report its location to the platform every second or every minute and the platform should frequently process the location form the terminal. It is possible to reduce the great communication load on the server, by calculating an error between the current GPS location and the estimated location at a specific time on the basis of the estimated arrival time of the moving object. It allows that the terminal report its location to the server only when the error between current GPS location and the estimated location is greater than a predetermined threshold value.
摘要:
A semiconductor memory device for reducing parasitic bit line capacitance and a method of fabricating the same are provided. The semiconductor memory device includes a conductive pad formed on a semiconductor substrate and a first interlayer insulating layer having a first contact hole that exposes the conductive pad. The first interlayer insulating layer is formed on the conductive pad and the semiconductor substrate. Bit line stacks are formed on the first interlayer insulating layer. Bit line spacers are formed from a combination of materials having different dielectric constants on the sidewalls of the bit line stack to reduce the parasitic bit line capacitance. Preferably, the bit line spacers are stack layers including silicon nitride, silicon oxide, and silicon nitride. A second interlayer insulating layer having a second contact hole is formed on the bit line stack. A conductive plug fills the first and second contact holes. A storage electrode of a capacitor is formed on the conductive plug to be connected to the conductive pad.
摘要:
Provided are an apparatus and method for improving transmission control protocol (TCP) performance using path recovery notification over a wireless network. The apparatus includes: a path recovery manager which detects a mobile host recovered from a temporary disconnection state and then outputs a detection signal to notify the detection result; a path recovery notification manager which receives the detection signal and generates an ACK (acknowledgement) packet to inform a transmitting end that the mobile host is recovered; and a first packet transceiver which transmits/receives the generated ACK packet and a data packet. Accordingly, a temporary disconnection state of a wireless network is explicitly informed to a transmitting end so as to transmit only lost packets without performing unnecessary congestion control, thereby improving TCP performance.
摘要:
A method of manufacturing a semiconductor device by which a generation of a void is prevented after depositing an interlayer dielectric material. First, a plurality of conductive patterns are formed on a substrate and then, a capping insulation layer is formed on the conductive patterns. The capping insulation layer is treated with plasma, and an interlayer dielectric material is deposited on the plasma treated capping insulation layer. The dependency of the interlayer dielectric on the type of material and form of an underlying layer is reduced to improve a gap-filling characteristic, especially for a gap having a high aspect ratio. An improved gap-filling characteristic is accomplished and the formation of all or substantially all of the voids from forming in a gap is prevented even though an interlayer dielectric is deposited under a conventional deposition conditions.