Abstract:
A phase locked loop (PLL) integrated circuit includes a voltage-controlled oscillator (VCO) configured to generate a clock signal at an output terminal thereof. The VCO is further configured to improve the frequency response of the PLL by varying a capacitance of the output terminal concurrently with changing a frequency of the clock signal. The VCO may include a control signal generator, which is configured to generate a plurality of control signals in response to UP and DOWN pumping signals, and an oscillator, which is configured to generate the clock signal in response to the plurality of control signals. The oscillator may be a ring oscillator, which is responsive to the plurality of control signals.
Abstract:
A phase locked loop (PLL) integrated circuit includes a voltage-controlled oscillator (VCO) configured to generate a clock signal at an output terminal thereof. The VCO is further configured to improve the frequency response of the PLL by varying a capacitance of the output terminal concurrently with changing a frequency of the clock signal. The VCO may include a control signal generator, which is configured to generate a plurality of control signals in response to UP and DOWN pumping signals, and an oscillator, which is configured to generate the clock signal in response to the plurality of control signals. The oscillator may be a ring oscillator, which is responsive to the plurality of control signals.
Abstract:
Methods and apparatuses for changing capacitance are provided. The apparatus may adjust a current supplied to a load capacitor according to the frequency of an input clock signal. When operating at a lower frequency, a capacitance may be increased such that noise immunity may be increased. When operating at a higher frequency, a capacitance may be decreased such that current consumption may be reduced.
Abstract:
A memory device includes a predecoder that receives a row address and responsively generates a plurality of memory block selection signals, a plurality of word line selection signals, a plurality of source line selection signals, and a plurality of sub-block selection signals including respective groups of signals that correspond to respective levels of a hierarchy of sub-blocks in a plurality of memory blocks. The device further includes a global decoder that receives the sub-block selection signals and responsively generates segment activation signals for respective segments of memory blocks that correspond to respective sub-blocks at a lowest level of the hierarchy of sub-blocks. A plurality of word line decoders are coupled to word lines of respective ones of plurality of the memory blocks, with each word line decoder configured to receive the segment activation signals, a memory block selection signal and the word line selection signals and to responsively generate word line signals on the word lines coupled thereto. A plurality of source line decoders are coupled to source lines of respective ones of the plurality of memory blocks, each source line decoder configured to receive the segment activation signals, with a memory block selection signal, and the source line selection signals and to responsively generate source line signals one the source lines coupled thereto.
Abstract:
A memory device includes a predecoder that receives a row address and responsively generates a plurality of memory block selection signals, a plurality of word line selection signals, a plurality of source line selection signals, and a plurality of sub-block selection signals including respective groups of signals that correspond to respective levels of a hierarchy of sub-blocks in a plurality of memory blocks. The device further includes a global decoder that receives the sub-block selection signals and responsively generates segment activation signals for respective segments of memory blocks that correspond to respective sub-blocks at a lowest level of the hierarchy of sub-blocks. A plurality of word line decoders are coupled to word lines of respective ones of plurality of the memory blocks, with each word line decoder configured to receive the segment activation signals, a memory block selection signal and the word line selection signals and to responsively generate word line signals on the word lines coupled thereto. A plurality of source line decoders are coupled to source lines of respective ones of the plurality of memory blocks, each source line decoder configured to receive the segment activation signals, with a memory block selection signal, and the source line selection signals and to responsively generate source line signals one the source lines coupled thereto.