公开(公告)号：US20140167031A1

公开(公告)日：2014-06-19

申请号：US13984090

申请日：2012-12-13

申请人： Seungjin Choi ,  Heecheol Kim ,  Youngsuk Song ,  Seongyeol Yoo

发明人： Seungjin Choi ,  Heecheol Kim ,  Youngsuk Song ,  Seongyeol Yoo

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L21/02

CPC分类号： H01L29/7869 ,  G02F1/134363 ,  G02F2001/134372 ,  G02F2001/136231 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1203 ,  H01L27/1225

摘要： A method for fabricating array substrate, an array substrate and a display device. The method for fabricating the array substrate comprises forming a thin film transistor, a first transparent electrode (14) and a second transparent electrode (19), wherein a multi dimensional electric field is created by the first transparent electrode (17) and the second transparent electrode (19), wherein forming the first transparent electrode (17) comprises: forming a metal oxide film presenting semiconductor properties; forming the first transparent electrode (17) by subjecting a portion of the metal oxide film to metallization treatment, and forming a semiconductor active layer (141) from a portion which is not subjected to the metallization treatment.

摘要翻译： 阵列基板，阵列基板和显示装置的制造方法。 制造阵列基板的方法包括形成薄膜晶体管，第一透明电极（14）和第二透明电极（19），其中由第一透明电极（17）和第二透明电极（17）产生多维电场 电极（19），其中形成所述第一透明电极（17）包括：形成呈现半导体特性的金属氧化物膜; 通过对金属氧化物膜的一部分进行金属化处理来形成第一透明电极（17），并且从未进行金属化处理的部分形成半导体活性层（141）。

公开(公告)号：US20120184060A1

公开(公告)日：2012-07-19

申请号：US13499353

申请日：2011-04-26

申请人： Youngsuk Song ,  Seungjin Choi ,  Seongyeol Yoo

发明人： Youngsuk Song ,  Seungjin Choi ,  Seongyeol Yoo

IPC分类号： H01L33/62

CPC分类号： H01L27/1288 ,  G02F2001/134372 ,  H01L27/1214

摘要： A manufacturing method for an array substrate with a fringe field switching (FFS) type thin film transistor (TFT) liquid crystal display (LCD) includes the following steps. A pattern of a gate line (1), a gate electrode, a common electrode (6) and a common electrode line (5) is formed by patterning a first transparent conductive film and a first metal film formed successively on a transparent substrate. Contact holes of the gate line in the pad area and a semiconductor pattern are formed through a patterning process after a gate insulator film, and a semiconductor film and a doped semiconductor film are formed successively. A second metal film is deposited and patterned. A second transparent conductive film is deposited and a lift-off process is performed. And then, a pattern of a source electrode, a drain electrode, a TFT channel and a pixel electrode (4) is formed by etching the exposed second metal film and the doped semiconductor film.

摘要翻译： 具有条纹场切换（FFS）型薄膜晶体管（TFT）液晶显示器（LCD）的阵列基板的制造方法包括以下步骤。 通过对在透明基板上连续形成的第一透明导电膜和第一金属膜进行图案化，形成栅极线（1），栅电极，公共电极（6）和公共电极线（5）的图案。 在栅绝缘膜之后通过图案化工艺形成焊盘区域中的栅极线的接触孔和半导体图案，并且依次形成半导体膜和掺杂半导体膜。 沉积和图案化第二金属膜。 沉积第二透明导电膜并执行剥离过程。 然后，通过蚀刻暴露的第二金属膜和掺杂半导体膜来形成源电极，漏电极，TFT沟道和像素电极（4）的图案。

公开(公告)号：US08017423B2

公开(公告)日：2011-09-13

申请号：US12561344

申请日：2009-09-17

申请人： Seongyeol Yoo ,  Youngsuk Song ,  Seungjin Choi

发明人： Seongyeol Yoo ,  Youngsuk Song ,  Seungjin Choi

IPC分类号： H01L21/00

CPC分类号： H01L29/78603 ,  H01L27/1218 ,  H01L29/66765

摘要： The present invention discloses a method for manufacturing thin film structure, which comprises the following steps: providing a substrate having a first recess and a second recess formed therein with the first recess being deeper than the second recess; depositing a first material layer and a second material layer of different thicknesses successively on the substrate; and grinding the substrate so that a flat upper surface is formed and the first material layer and the second material layer are remained in the first recess while only the first material layer is remained in the second recess. The present invention also discloses a method for manufacturing fringe field switching type liquid crystal display array substrate. With the present invention, it is possible to make the upper surface flat while forming patterns on two layers of thin films respectively by using a single mask.

摘要翻译： 本发明公开了一种制造薄膜结构的方法，包括以下步骤：提供具有第一凹部和形成在其中的第二凹部的基板，其中第一凹部比第二凹部更深; 在衬底上依次沉积不同厚度的第一材料层和第二材料层; 并且研磨所述基板，使得形成平坦的上表面，并且所述第一材料层和所述第二材料层保留在所述第一凹部中，同时仅所述第一材料层保留在所述第二凹部中。 本发明还公开了一种用于制造条纹场开关型液晶显示阵列基板的方法。 利用本发明，可以通过使用单个掩模分别在两层薄膜上形成图案而使上表面平坦。

公开(公告)号：US20140054581A1

公开(公告)日：2014-02-27

申请号：US13878475

申请日：2012-12-23

申请人： Youngsuk Song ,  Guanbao Hui ,  Seongyeol Yoo ,  Seungjin Choi ,  Feng Zhang

发明人： Youngsuk Song ,  Guanbao Hui ,  Seongyeol Yoo ,  Seungjin Choi ,  Feng Zhang

IPC分类号： H01L27/12

CPC分类号： H01L27/124 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/136209 ,  G02F2001/134318 ,  G02F2001/134372 ,  G02F2001/136222 ,  G02F2203/01 ,  G02F2203/02 ,  H01L27/1259

摘要： Embodiments of the invention relate to an array substrate, a manufacturing method thereof and a display device comprising the array substrate. The array substrate comprises a gate line and a data line which define a pixel region, the pixel region comprises a thin film transistor region and an electrode pattern region, a gate electrode, a gate insulation layer, an active layer, a source electrode, a drain electrode and a passivation layer are formed in the thin film transistor region, the gate insulation layer, a pixel electrode, the passivation layer and a common electrode are formed in the electrode pattern region, and the common electrode and the pixel electrode form a multi-dimensional electric field. A color resin layer is formed between the gate insulation layer and the pixel electrode.

摘要翻译： 本发明的实施例涉及阵列基板，其制造方法和包括阵列基板的显示装置。 阵列基板包括栅极线和限定像素区域的数据线，像素区域包括薄膜晶体管区域和电极图案区域，栅极电极，栅极绝缘层，有源层，源极电极， 漏电极和钝化层形成在薄膜晶体管区域中，栅极绝缘层，像素电极，钝化层和公共电极形成在电极图案区域中，并且公共电极和像素电极形成多个 维电场。 在栅极绝缘层和像素电极之间形成着色树脂层。

公开(公告)号：US08603843B2

公开(公告)日：2013-12-10

申请号：US13381157

申请日：2011-04-26

申请人： Youngsuk Song ,  Seungjin Choi ,  Seongyeol Yoo

发明人： Youngsuk Song ,  Seungjin Choi ,  Seongyeol Yoo

IPC分类号： H01L21/00

CPC分类号： H01L27/1288 ,  G02F1/13458 ,  G02F1/136227 ,  G02F2001/134372 ,  G02F2001/136231 ,  H01L27/1214 ,  H01L27/124

摘要： Disclosed is a method for manufacturing an array substrate of an FFS type TFT-LCD, comprising the steps of: forming a first transparent conductive film, a first metal film and an impurity-doped semiconductor film on a transparent substrate sequentially, and then patterning the stack of the films to form patterns including source electrodes, drain electrodes, data lines and pixel electrodes; forming a semiconductor film and patterning it to form a pattern of the impurity-doped semiconductor layer and a pattern of the semiconductor layer including TFT channels; forming an insulating film and a second metal film, and patterning the stack of the films to form patterns including connection holes of the data lines in a PAD region, gate lines, gate electrodes and common electrode lines; forming a second transparent conductive film, and patterning it to form patterns including the common electrode.

摘要翻译： 公开了一种用于制造FFS型TFT-LCD的阵列基板的方法，包括以下步骤：依次在透明基板上形成第一透明导电膜，第一金属膜和杂质掺杂半导体膜，然后将 堆叠的膜以形成包括源电极，漏电极，数据线和像素电极的图案; 形成半导体膜并对其进行构图以形成杂质掺杂半导体层的图案和包括TFT沟道的半导体层的图案; 形成绝缘膜和第二金属膜，并且图案化所述膜的堆叠以形成包括PAD区域，栅极线，栅电极和公共电极线中的数据线的连接孔的图案; 形成第二透明导电膜，并将其图形化以形成包括公共电极的图案。

公开(公告)号：US20120107982A1

公开(公告)日：2012-05-03

申请号：US13381157

申请日：2011-04-26

申请人： Youngsuk Song ,  Seungjin Choi ,  Seongyeol Yoo

发明人： Youngsuk Song ,  Seungjin Choi ,  Seongyeol Yoo

IPC分类号： H01L21/336

CPC分类号： H01L27/1288 ,  G02F1/13458 ,  G02F1/136227 ,  G02F2001/134372 ,  G02F2001/136231 ,  H01L27/1214 ,  H01L27/124

摘要： Disclosed is a method for manufacturing an array substrate of an FFS type TFT-LCD, comprising the steps of: forming a first transparent conductive film, a first metal film and an impurity-doped semiconductor film on a transparent substrate sequentially, and then patterning the stack of the films to form patterns including source electrodes, drain electrodes, data lines and pixel electrodes; forming a semiconductor film and patterning it to form a pattern of the impurity-doped semiconductor layer and a pattern of the semiconductor layer including TFT channels; forming an insulating film and a second metal film, and patterning the stack of the films to form patterns including connection holes of the data lines in a PAD region, gate lines, gate electrodes and common electrode lines; forming a second transparent conductive film, and patterning it to form patterns including the common electrode.

摘要翻译： 公开了一种用于制造FFS型TFT-LCD的阵列基板的方法，包括以下步骤：依次在透明基板上形成第一透明导电膜，第一金属膜和杂质掺杂半导体膜，然后将 堆叠的膜以形成包括源电极，漏电极，数据线和像素电极的图案; 形成半导体膜并对其进行构图以形成杂质掺杂半导体层的图案和包括TFT沟道的半导体层的图案; 形成绝缘膜和第二金属膜，并且图案化所述膜的堆叠以形成包括PAD区域，栅极线，栅电极和公共电极线中的数据线的连接孔的图案; 形成第二透明导电膜，并将其图形化以形成包括公共电极的图案。

公开(公告)号：US08017465B2

公开(公告)日：2011-09-13

申请号：US12565953

申请日：2009-09-24

申请人： Seungjin Choi ,  Youngsuk Song ,  Seongyeol Yoo

发明人： Seungjin Choi ,  Youngsuk Song ,  Seongyeol Yoo

IPC分类号： H01L21/336 ,  H01L21/8234

CPC分类号： H01L27/1288 ,  G02F1/1368 ,  H01L27/1214

摘要： A method for manufacturing an array substrate of liquid crystal display is performed with the following steps: providing a substrate having gate lines, a gate insulating layer and an active layer pattern formed thereon in this order; depositing a first transparent conductive layer and a source/drain metal layer in this order on the substrate; forming a photoresist layer on the source/drain metal layer through a triple-tone mask; performing a wet-etching process on the source/drain metal layer and the first transparent conductive layer exposed from the photoresist layer; performing a first ashing process on the photoresist layer and performing a dry-etching process on the source/drain metal layer, the first transparent conductive layer and the active layer pattern exposed by the first ashing process; performing a second ashing process on the photoresist layer and performing a wet-etching process on the source/drain metal layer exposed by the second ashing process; and removing the remaining photoresist layer. According to the invention, the over-etching on the TFT channel region can be reduced and the display quality of the liquid crystal display can be ensured.

摘要翻译： 制造液晶显示器用阵列基板的方法是通过以下步骤进行的：在其上依次提供具有栅极线，栅极绝缘层和有源层图案的基板; 在衬底上依次沉积第一透明导电层和源极/漏极金属层; 通过三色调掩模在源极/漏极金属层上形成光致抗蚀剂层; 对源极/漏极金属层和从光致抗蚀剂层露出的第一透明导电层进行湿蚀刻工艺; 在所述光致抗蚀剂层上进行第一灰化处理，对所述源极/漏极金属层，所述第一透明导电层和所述有源层图案通过所述第一灰化处理曝光进行干蚀刻处理; 对所述光致抗蚀剂层进行第二灰化处理，并对通过所述第二灰化处理暴露的所述源极/漏极金属层进行湿式蚀刻处理; 并除去剩余的光致抗蚀剂层。 根据本发明，可以减少TFT沟道区上的过蚀刻，并且可以确保液晶显示器的显示质量。

公开(公告)号：US09122114B2

公开(公告)日：2015-09-01

申请号：US13475622

申请日：2012-05-18

申请人： Youngsuk Song ,  Seungjin Choi ,  Seongyeol Yoo

发明人： Youngsuk Song ,  Seungjin Choi ,  Seongyeol Yoo

IPC分类号： H01L21/00 ,  G02F1/1362 ,  H01L27/12 ,  G02F1/1335 ,  G02F1/1368 ,  G02F1/1343

CPC分类号： G02F1/1362 ,  G02F1/133555 ,  G02F1/134363 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/134372 ,  G02F2001/136231 ,  G02F2001/136236 ,  G02F2201/48 ,  H01L27/1288

摘要： An embodiment of the disclosed technology provides a method of manufacturing an array substrate, including: a first mask process of forming an inorganic material protrusion on a base substrate; a second mask process of forming a reflective region pattern, a gate line, a gate electrode branched from the gate line, and a common electrode; a third mask process of forming an active island and a data line formed and forming a source electrode connected to the data line and a drain electrode on the active island and a channel; a fourth mask process of forming an insulation material layer, treating the insulation material layer to form a planarization layer, and forming a through hole above the drain electrode; and a fifth mask process of forming a pixel electrode and connected to the drain electrode via the through hole in a reflective region.

摘要翻译： 所公开的技术的一个实施例提供一种制造阵列基板的方法，包括：在基底基板上形成无机材料突起的第一掩模工艺; 形成反射区域图案的第二掩模工艺，栅极线，从栅极线分支的栅电极和公共电极; 形成有源岛和数据线的第三掩模处理，并且形成连接到有源岛上的数据线和漏电极的源电极和沟道; 形成绝缘材料层的第四掩模工艺，处理绝缘材料层以形成平坦化层，以及在漏电极之上形成通孔; 以及形成像素电极并通过反射区域中的通孔连接到漏电极的第五掩模处理。

公开(公告)号：US08558231B2

公开(公告)日：2013-10-15

申请号：US12724047

申请日：2010-03-15

申请人： Youngsuk Song ,  Seungjin Choi ,  Seongyeol Yoo

发明人： Youngsuk Song ,  Seungjin Choi ,  Seongyeol Yoo

IPC分类号： H01L31/20

CPC分类号： H01L27/127 ,  H01L27/1248 ,  H01L27/1288

摘要： The present invention provides an array substrate comprising: a substrate, having a thin film transistor (TFT) formed thereupon, the TFT having a gate electrode, a source electrode and a drain electrode; a first metal layer, formed on the substrate, and comprising a gate line and the gate electrode of the TFT; a first insulating layer, covering the first metal layer and the substrate; a semiconductor layer, an ohmic contact layer, and a second metal layer, which are sequentially formed on the first insulating layer; a second insulating layer, covering the semiconductor layer, the ohmic contact layer, and the second metal layer; a pixel electrode, provided on the second insulating layer and is connected to the drain electrode. The second metal layer further comprises an etch-blocking pattern in the peripheral area of the pixel electrode within the overlapping region between the pixel electrode and the first metal layer.

摘要翻译： 本发明提供了一种阵列基板，包括：具有形成在其上的薄膜晶体管（TFT）的基板，所述TFT具有栅电极，源电极和漏电极; 第一金属层，形成在所述基板上，并且包括所述TFT的栅极线和所述栅电极; 覆盖所述第一金属层和所述基板的第一绝缘层; 半导体层，欧姆接触层和第二金属层，其顺序地形成在所述第一绝缘层上; 覆盖半导体层，欧姆接触层和第二金属层的第二绝缘层; 像素电极，设置在第二绝缘层上并连接到漏电极。 第二金属层还包括在像素电极和第一金属层之间的重叠区域内的像素电极的周边区域中的蚀刻阻挡图案。

公开(公告)号：US08460982B2

公开(公告)日：2013-06-11

申请号：US13499353

申请日：2011-04-26

申请人： Youngsuk Song ,  Seungjin Choi ,  Seongyeol Yoo

发明人： Youngsuk Song ,  Seungjin Choi ,  Seongyeol Yoo

IPC分类号： H01L21/84

摘要： A manufacturing method for an array substrate with a fringe field switching (FFS) type thin film transistor (TFT) liquid crystal display (LCD) includes the following steps. A pattern of a gate line (1), a gate electrode, a common electrode (6) and a common electrode line (5) is formed by patterning a first transparent conductive film and a first metal film formed successively on a transparent substrate. Contact holes of the gate line in the pad area and a semiconductor pattern are formed through a patterning process after a gate insulator film, and a semiconductor film and a doped semiconductor film are formed successively. A second metal film is deposited and patterned. A second transparent conductive film is deposited and a lift-off process is performed. And then, a pattern of a source electrode, a drain electrode, a TFT channel and a pixel electrode (4) is formed by etching the exposed second metal film and the doped semiconductor film.