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13 条记录 (耗时 0.014 秒)

    Bipolar transistor and method for fabricating the same
    3.
    发明授权
    Bipolar transistor and method for fabricating the same 有权
    双极晶体管及其制造方法

    公开(公告)号：US07465969B2

    公开(公告)日：2008-12-16

    申请号：US11450474

    申请日：2006-06-12

    申请人： Teruhito Ohnishi ,  Koichiro Yuki ,  Tsuneichiro Sano ,  Tohru Saitoh ,  Ken Idota ,  Takahiro Kawashima ,  Shigeki Sawada

    发明人： Teruhito Ohnishi ,  Koichiro Yuki ,  Tsuneichiro Sano ,  Tohru Saitoh ,  Ken Idota ,  Takahiro Kawashima ,  Shigeki Sawada

    IPC分类号： H01L21/336 ,  H01L21/8234

    CPC分类号： H01L29/66242 ,  H01L29/7378

    摘要： A bipolar transistor includes a Si single crystalline layer serving as a collector, a single crystalline Si/SiGeC layer and a polycrystalline Si/SiGeC layer which are formed on the Si single crystalline layer, an oxide film having an emitter opening portion, an emitter electrode, and an emitter layer. An intrinsic base layer is formed on the single crystalline Si/SiGeC layer, part of the single crystalline Si/SiGeC layer, the polycrystalline Si/SiGeC layer and the Co silicide layer together form an external base layer. The thickness of the emitter electrode is set so that boron ions implanted into the emitter electrode and diffused therein do not reach an emitter-base junction portion.

    摘要翻译： 双极晶体管包括形成在Si单晶层上的Si单结晶层，单晶Si / SiGeC层和多晶Si / SiGeC层，具有发射极开口部分的氧化膜，发射极 ，和发射极层。 在单晶Si / SiGeC层上形成本征基层，单晶Si / SiGeC层的一部分，多晶Si / SiGeC层和Co硅化物层一起形成外部基极层。 发射电极的厚度被设定为使得注入发射电极并在其中扩散的硼离子不会到达发射极 - 基极接合部分。

    Semiconductor integrated circuit device with self-aligned superhigh speed bipolar transistor
    5.
    发明授权
    Semiconductor integrated circuit device with self-aligned superhigh speed bipolar transistor 失效
    具有自对准超高速双极晶体管的半导体集成电路器件

    公开(公告)号：US5504368A

    公开(公告)日：1996-04-02

    申请号：US384694

    申请日：1995-02-06

    申请人： Shigeki Sawada

    发明人： Shigeki Sawada

    IPC分类号： H01L27/02 ,  H01L29/00 ,  H01L27/082 ,  H01L27/102

    CPC分类号： H01L27/0233 ,  Y10S148/01

    摘要： A superhigh speed vertical transistor having an ultra thin base, a vertical NPN transistor having a reverse direction structure for composing an IIL, and a lateral PNP transistor similarly composing an injector of an IIL are integrated on a P-type silicon substrate. The emitter leading-out part opening of the superhigh speed vertical NPN transistor and the collector leading-out part opening of the vertical NPN transistor having a reverse direction structure are self-aligned to the base leading-out electrode. Since both the superhigh speed vertical NPN transistor having a reverse direction structure and the superhigh speed vertical NPN transistor are self-aligned, the superhigh speed vertical NPN transistor and the IIL device may be integrated on the same chip. In addition, the intrinsic base layer of the vertical NPN transistor having a reverse direction structure is deeper in junction than the base layer of the polysilicon emitter electrode for the superhigh speed NPN transistor of self-aligned type.

    摘要翻译： 具有超薄基极的超高速垂直晶体管，具有用于组成IIL的反向结构的垂直NPN晶体管和类似地组成IIL的注入器的横向PNP晶体管集成在P型硅衬底上。 超高速垂直NPN晶体管的发射极引出部分开路和具有反向结构的垂直NPN晶体管的集电极导出部分开口与基极引出电极自对准。 由于具有反向结构的超高速垂直NPN晶体管和超高速垂直NPN晶体管都是自对准的，所以超高速垂直NPN晶体管和IIL器件可以集成在同一芯片上。 此外，具有相反方向结构的垂直NPN晶体管的本征基极层比用于自对准型超高速NPN晶体管的多晶硅发射电极的基极层更深。

    ORGANIC-WASTEWATER TREATMENT METHOD AND ORGANIC-WASTEWATER TREATMENT APPARATUS
    6.
    发明申请
    ORGANIC-WASTEWATER TREATMENT METHOD AND ORGANIC-WASTEWATER TREATMENT APPARATUS 审中-公开
    有机废水处理方法及有机废水处理装置

    公开(公告)号：US20120160768A1

    公开(公告)日：2012-06-28

    申请号：US13393715

    申请日：2009-09-29

    申请人： Yu Tanaka ,  Tetsuro Fukase ,  Shigeki Sawada

    发明人： Yu Tanaka ,  Tetsuro Fukase ,  Shigeki Sawada

    IPC分类号： C02F3/12 ,  C02F1/44

    CPC分类号： C02F3/1215 ,  C02F2101/30 ,  Y02W10/15

    摘要： By adding an iron salt, the sedimentation property, the concentration property, and the filtration property of sludge in an activated-sludge mixed liquor in a biological treatment tank are effectively improved and treated water of high quality is efficiently provided. When an iron salt such as ferrous chloride, ferric chloride, or polyferric sulfate is added to organic wastewater and the organic wastewater is biologically treated, the iron salt is added to the organic wastewater and mixing is conducted; and the water mixture is mixed with activated sludge and biologically treated. By mixing organic wastewater and an iron salt at a pH close to an optimum pH for ferric hydroxide in advance, the turbidity of the treated water due to the formation of iron oxide or ferrous carbonate is suppressed.

    摘要翻译： 通过添加铁盐，有效地提高了生物处理槽中活性污泥混合液中的污泥的沉降特性，浓度特性和过滤性能，有效地提供了高质量的处理水。 当有机废水中加入氯化亚铁，氯化铁或聚硫酸铁等铁盐，有机废水进行生物处理时，将铁盐加入有机废水中进行混合; 并将水混合物与活性污泥混合并进行生物处理。 预先将有机废水和pH值接近于最佳pH的铁盐混合，抑制由于形成氧化铁或碳酸亚铁而产生的处理水的浊度。

    Bipolar transistor and method for fabricating the same
    7.
    发明授权
    Bipolar transistor and method for fabricating the same 有权
    双极晶体管及其制造方法

    公开(公告)号：US07091099B2

    公开(公告)日：2006-08-15

    申请号：US10807307

    申请日：2004-03-24

    申请人： Teruhito Ohnishi ,  Koichiro Yuki ,  Tsuneichiro Sano ,  Tohru Saitoh ,  Ken Idota ,  Takahiro Kawashima ,  Shigeki Sawada

    发明人： Teruhito Ohnishi ,  Koichiro Yuki ,  Tsuneichiro Sano ,  Tohru Saitoh ,  Ken Idota ,  Takahiro Kawashima ,  Shigeki Sawada

    IPC分类号： H01L21/331

    CPC分类号： H01L29/66242 ,  H01L29/7378

    摘要： A bipolar transistor includes a Si single crystalline layer serving as a collector, a single crystalline Si/SiGeC layer and a polycrystalline Si/SiGeC layer which are formed on the Si single crystalline layer, an oxide film having an emitter opening portion, an emitter electrode, and an emitter layer. An intrinsic base layer is formed on the single crystalline Si/SiGeC layer, part of the single crystalline Si/SiGeC layer, the polycrystalline Si/SiGeC layer and the Co silicide layer together form an external base layer. The thickness of the emitter electrode is set so that boron ions implanted into the emitter electrode and diffused therein do not reach an emitter-base junction portion.

    摘要翻译： 双极晶体管包括形成在Si单晶层上的Si单结晶层，单晶Si / SiGeC层和多晶Si / SiGeC层，具有发射极开口部分的氧化膜，发射极 ，和发射极层。 在单晶Si / SiGeC层上形成本征基层，单晶Si / SiGeC层的一部分，多晶Si / SiGeC层和Co硅化物层一起形成外部基极层。 发射电极的厚度被设定为使得注入发射电极并在其中扩散的硼离子不会到达发射极 - 基极接合部分。

    Method of fabricating a semiconductor integrated circuit device
    8.
    发明授权
    Method of fabricating a semiconductor integrated circuit device 失效
    制造半导体集成电路器件的方法

    公开(公告)号：US06093591A

    公开(公告)日：2000-07-25

    申请号：US56209

    申请日：1998-04-07

    申请人： Shigeki Sawada

    发明人： Shigeki Sawada

    IPC分类号： H01L21/762 ,  H01L21/8249

    CPC分类号： H01L21/76205 ,  H01L21/8249

    摘要： In a Bi-CMOS integrated circuit device, to reduce a collector-substrate junction capacitance in an NPN transistor and to reduce the step of forming an anti-punch-through layer of the N-channel MOS transistor. Using as a mask a resist pattern having windows made on an element isolation LOCOS film 113a, 113c and P-type well layer 106, impurities are ion-implanted to form a channel stopper layer 115a, 115b for element isolation of a NPN transistor and an anti-punch-through layer 115c for a N-channel MOS transistor. Thus, a sufficient element isolation withstand voltage can be assured while avoiding an increase in the collector-substrate capacitance of the NPN transistor which is due to the transverse diffusion of the channel stopper layer when an epitaxial layer, well layer and LOCOS film are formed. In addition, without increasing the number of steps, the drain-source withstand voltage of the N-channel type MOS transistor and the short channel durability can be improved.

    摘要翻译： 在Bi-CMOS集成电路器件中，为了减小NPN晶体管中的集电极 - 衬底结电容，并减少形成N沟道MOS晶体管的抗穿透层的步骤。 使用在元件隔离LOCOS膜113a，113c和P型阱层106上形成的具有窗口的抗蚀剂图案，离子注入杂质以形成用于NPN晶体管的元件隔离的沟道阻挡层115a，115b，以及 用于N沟道MOS晶体管的反穿通层115c。 因此，当避免由于形成外延层，阱层和LOCOS膜时沟道阻挡层的横向扩散而导致的NPN晶体管的集电极 - 基板电容的增加，可以确保足够的元件隔离耐受电压。 此外，在不增加步数的情况下，可以提高N沟道型MOS晶体管的漏极 - 源极耐受电压和短沟道耐久性。

    Spiral wound type membrane module
    9.
    发明授权
    Spiral wound type membrane module 失效
    螺旋缠绕式膜组件

    公开(公告)号：US4834881A

    公开(公告)日：1989-05-30

    申请号：US231731

    申请日：1988-08-12

    申请人： Shigeki Sawada ,  Masaaki Shishido

    发明人： Shigeki Sawada ,  Masaaki Shishido

    IPC分类号： B01D63/10

    CPC分类号： B01D63/10

    摘要： A spiral wound type membrane module for a water treating apparatus comprising:a water collection pipe having a hollow inside so as to form a water passage in which openings for communicating the hollow inside with the outside are perforated through the pipe walls;a separation membrane and a spacer wound around for several turns while being overlaid with each other to the outer circumferential surface of the water collection pipe, in which the separation membrane and the spacer are wound around such that the spacer is disposed between each of the layers of the separation membrane and, therefore, a channel for raw water to be processed and a channel for processed water after permeated through the separation membrane are alternately laminated between each of layers of the separation membrane; whereinthe spacer constituting the channel for the water to be processed has corrugating ridges extended in the axial direction of the water collection pipe and the corrugating ridges are extended in a zig-zag manner or, in another embodiment, have protrusions disposed on the inclined surface thereof such that the flow of raw water along the surface of the separation membrane is disturbed; andthe channel for the processed water is in communication with the water passage at the inside of the water collection pipe by way of the openings perforated through the pipe wall of the water collection pipe.

    摘要翻译： 一种用于水处理设备的螺旋缠绕型膜组件，包括：一个具有中空的集水管，以形成一个水通道，其中通过管壁穿过用于使中空内部与外部连通的开口; 分离膜和间隔件缠绕在几圈之间，同时彼此重叠到收集管的外周表面，其中分离膜和间隔件被缠绕在一起，使得间隔件设置在每个层之间 并且因此在分离膜的各层之间交替层叠待处理原水的通道和渗透通过分离膜的加工水的通道; 其特征在于，构成待处理水通道的间隔件具有在集水管的轴向延伸的波纹脊，并且波纹脊以锯齿形的方式延伸，或者在另一实施例中，具有设置在倾斜表面上的突起 使得沿着分离膜的表面的原水流受到干扰; 并且处理水的通道通过穿过集水管的管壁的开口与采水管内部的水通道连通。