公开(公告)号：US20060070494A1

公开(公告)日：2006-04-06

申请号：US11284910

申请日：2005-11-23

申请人： Shigeo Yoshii ,  Michihito Ueda ,  Nozomu Matsukawa ,  Ichiro Yamashita

发明人： Shigeo Yoshii ,  Michihito Ueda ,  Nozomu Matsukawa ,  Ichiro Yamashita

IPC分类号： B22F9/20

CPC分类号： B82Y10/00 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332

摘要： An object of the present invention is to provide a method of forming fine particles on a substrate in which reoxidization of reduced fine particles is suppressed. Reduced fine particles (FeO fine particles) are formed by embedding metal oxide fine particles (Fe2O3 fine particles) fixed on a p type silicon semiconductor substrate into a silicon oxidized film, and carrying out a heat treatment in a reducing gas atmosphere. Presence of the silicon oxidized film enables suppression of reoxidization of the reduced fine particles (FeO fine particles) due to exposure to the ambient air.

摘要翻译： 本发明的目的是提供一种在抑制还原的微粒的再氧化的基板上形成微粒的方法。 通过将固定在p型硅半导体衬底上的金属氧化物微粒（Fe 2 O 3 O 3微粒）嵌入到硅氧化膜中而形成还原的微粒（FeO微粒） ，并在还原气体气氛中进行热处理。 硅氧化膜的存在能够抑制由于暴露于环境空气而导致的还原的微粒（FeO微粒）的再氧化。

公开(公告)号：US07419529B2

公开(公告)日：2008-09-02

申请号：US11284910

申请日：2005-11-23

申请人： Shigeo Yoshii ,  Michihito Ueda ,  Nozomu Matsukawa ,  Ichiro Yamashita

发明人： Shigeo Yoshii ,  Michihito Ueda ,  Nozomu Matsukawa ,  Ichiro Yamashita

IPC分类号： B22F9/20

CPC分类号： B82Y10/00 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332

摘要： An object of the present invention is to provide a method of forming fine particles on a substrate in which reoxidization of reduced fine particles is suppressed. Reduced fine particles (FeO fine particles) are formed by embedding metal oxide fine particles (Fe2O3 fine particles) fixed on a p type silicon semiconductor substrate into a silicon oxidized film, and carrying out a heat treatment in a reducing gas atmosphere. Presence of the silicon oxidized film enables suppression of reoxidization of the reduced fine particles (FeO fine particles) due to exposure to the ambient air.

摘要翻译： 本发明的目的是提供一种在抑制还原的微粒的再氧化的基板上形成微粒的方法。 通过将固定在p型硅半导体衬底上的金属氧化物微粒（Fe 2 O 3 O 3微粒）嵌入到硅氧化膜中而形成还原的微粒（FeO微粒） ，并在还原气体气氛中进行热处理。 硅氧化膜的存在能够抑制由于暴露于环境空气而导致的还原的微粒（FeO微粒）的再氧化。

公开(公告)号：US08773213B2

公开(公告)日：2014-07-08

申请号：US13614624

申请日：2012-09-13

申请人： Yu Nishitani ,  Yukihiro Kaneko ,  Michihito Ueda

发明人： Yu Nishitani ,  Yukihiro Kaneko ,  Michihito Ueda

IPC分类号： H03B5/20 ,  H01L49/02

CPC分类号： H03B5/20 ,  H01L27/0682 ,  H01L28/20 ,  H01L28/40 ,  H01L28/56 ,  H03B5/24 ,  H03B2200/004 ,  H03B2201/02 ,  H03B2201/0208

摘要： A resistance-capacitance oscillation circuit comprises an amplifier and a phase shifting circuit. The phase shifting circuit comprises at least three resistance-capacitance circuit elements, each of which comprises a resistance and a capacitor. At least one of the resistance-capacitance circuit elements comprises a variable resistance and a variable capacitor. The variable resistance is formed of a first electrode, a second electrode, a part of a semiconductor film, a part of a ferroelectric film, and a fourth electrode. The variable capacitor is formed of the second electrode, a third electrode, a fifth electrode, another part of the ferroelectric film, another part of the semiconductor film, and a paraelectric film.

摘要翻译： 电阻 - 电容振荡电路包括放大器和移相电路。 相移电路包括至少三个电阻 - 电容电路元件，每个电阻电容元件包括电阻和电容器。 电阻 - 电容电路元件中的至少一个包括可变电阻和可变电容。 可变电阻由第一电极，第二电极，半导体膜的一部分，铁电体膜的一部分和第四电极形成。 可变电容器由第二电极，第三电极，第五电极，铁电体膜的另一部分，半导体膜的另一部分和顺电膜形成。

公开(公告)号：US08773212B2

公开(公告)日：2014-07-08

申请号：US13614498

申请日：2012-09-13

申请人： Yu Nishitani ,  Yukihiro Kaneko ,  Michihito Ueda

发明人： Yu Nishitani ,  Yukihiro Kaneko ,  Michihito Ueda

IPC分类号： H03B5/20 ,  H01L49/02

CPC分类号： H03B5/20 ,  H01G7/06 ,  H01L23/64 ,  H01L25/16 ,  H01L28/20 ,  H01L28/40 ,  H01L28/55 ,  H01L28/56 ,  H01L2924/0002 ,  H03B5/24 ,  H03B2200/004 ,  H03B2201/02 ,  H03B2201/0208 ,  H01L2924/00

摘要： A resistance-capacitance oscillation circuit comprises an amplifier and a phase shifting circuit. The phase shifting circuit comprises at least three resistance-capacitance circuit elements, which comprise a resistance and a capacitance. At least one of the resistance-capacitance circuit elements comprises a variable resistance and a variable capacitance. The variable resistance is formed of a first electrode, a second electrode, a part of a semiconductor film, a part of a ferroelectric film, and a fourth electrode. The variable capacitor is formed of the second electrode, a third electrode, a fifth electrode, another part of the ferroelectric film, another part of the semiconductor film, and a paraelectric film.

摘要翻译： 电阻 - 电容振荡电路包括放大器和移相电路。 相移电路包括至少三个电阻 - 电容电路元件，其包括电阻和电容。 电阻 - 电容电路元件中的至少一个包括可变电阻和可变电容。 可变电阻由第一电极，第二电极，半导体膜的一部分，铁电体膜的一部分和第四电极形成。 可变电容器由第二电极，第三电极，第五电极，铁电体膜的另一部分，半导体膜的另一部分和顺电膜形成。

公开(公告)号：US08414187B2

公开(公告)日：2013-04-09

申请号：US13207940

申请日：2011-08-11

申请人： Michihito Ueda ,  Hiroyuki Tanaka ,  Yukihiro Kaneko ,  Eiji Fujii

发明人： Michihito Ueda ,  Hiroyuki Tanaka ,  Yukihiro Kaneko ,  Eiji Fujii

IPC分类号： G01K7/01 ,  G01J5/00

CPC分类号： H01L37/02 ,  G01K7/36

摘要： A temperature sensor includes first and second lower electrodes, a ferroelectric layer having polarization, a semiconductor layer; and first to third upper electrodes. The second upper electrode is interposed between the first upper electrode and the third upper electrode in a plan view. The semiconductor layer includes a first channel disposed between the first upper electrode and the second upper electrode, and a second channel disposed between the second upper electrode and the third upper electrode. The ferroelectric layer includes a first ferroelectric part disposed below the first channel and a second ferroelectric part disposed below the second channel. A polarization direction of the first ferroelectric part is opposite to a polarization direction of the second first ferroelectric part. The temperature is calculated based on the output voltage from the second upper electrode and the voltage applied to the first upper electrode.

摘要翻译： 温度传感器包括第一和第二下部电极，具有极化的铁电体层，半导体层; 和第一至第三上电极。 第二上电极在平面图中插入在第一上电极和第三上电极之间。 半导体层包括设置在第一上电极和第二上电极之间的第一通道和设置在第二上电极和第三上电极之间的第二通道。 铁电层包括设置在第一通道下方的第一铁电体部分和设置在第二通道下方的第二铁电体部分。 第一铁电体部的偏振方向与第二第一强电介质部的偏振方向相反。 基于来自第二上电极的输出电压和施加到第一上电极的电压来计算温度。

公开(公告)号：US08093784B2

公开(公告)日：2012-01-10

申请号：US13191139

申请日：2011-07-26

申请人： Takakiyo Harigai ,  Michihito Ueda ,  Hideaki Adachi ,  Eiji Fujii

发明人： Takakiyo Harigai ,  Michihito Ueda ,  Hideaki Adachi ,  Eiji Fujii

IPC分类号： H02N2/00 ,  H01L41/107

CPC分类号： H02N2/186 ,  H01L41/1134

摘要： Provided is a relatively easy-to-fabricate piezoelectric power generating element capable of generating a large amount of electric power while comprising a bridge-type vibration beam that is resistant to damage from external vibration. This element comprises a support member, a strip-shaped vibration beam, a piezoelectric layer, and electrodes. The first and second ends of the vibration beam are fixed to the support member. The piezoelectric layer and the electrodes are provided on the surface of the vibration beam. The vibration beam extends in a plane when it is not vibrating. The vibration beam has a first portion that extends from the first end fixed to the support member, a second portion that extends from the second end fixed to the support member, and a third portion that connects the end of the first portion opposite to the first end and the end of the second portion opposite to the second end. The vibration beam has a shape such that, when viewed in a direction perpendicular to the plane, a first direction in which the first portion extends is a direction closer to the second end, and a second direction in which the second portion extends is a direction closer to the first end, the first and second directions each make an angle of more than 0° and less than 90° with respect to a straight line connecting the center of the first end and the center of the second end, and the third portion intersects once the straight line.

摘要翻译： 提供一种相对容易制造的能够产生大量电力的压电发电元件，同时包括耐外部振动损坏的桥式振动梁。 该元件包括支撑构件，条形振动梁，压电层和电极。 振动梁的第一和第二端固定在支撑构件上。 压电层和电极设置在振动梁的表面上。 当振动梁不振动时，振动梁在平面内延伸。 振动梁具有从固定到支撑构件的第一端延伸的第一部分，从固定到支撑构件的第二端延伸的第二部分，以及连接第一部分的与第一部分相对的端部的第三部分 端部和第二部分的与第二端相对的端部。 所述振动梁具有这样的形状：当从垂直于所述平面的方向观察时，所述第一部分延伸的第一方向是更靠近所述第二端的方向，并且所述第二部分延伸的第二方向是方向 更靠近第一端，第一和第二方向相对于连接第一端的中心和第二端的中心的直线大于0°且小于90°，​​并且第三部分 相交一次直线。

公开(公告)号：US06949780B2

公开(公告)日：2005-09-27

申请号：US10847323

申请日：2004-05-18

申请人： Michihito Ueda ,  Kenji Toyoda ,  Kiyoyuki Morita ,  Takashi Ohtsuka

发明人： Michihito Ueda ,  Kenji Toyoda ,  Kiyoyuki Morita ,  Takashi Ohtsuka

IPC分类号： H01L27/10 ,  G11C27/00 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： G11C27/005 ,  G11C11/54 ,  H01L2924/0002 ,  H01L2924/00

摘要： In an electric potential generating device, a source of an N type MIS transistor is mutually connected to that of a P type MIS transistor and also connected to an output terminal. A drain of an N type MIS transistor 54 is connected to a power supply voltage supply portion for supplying power supply voltage VDD, and a drain of the P type MIS transistor is connected to a ground. In addition, a substrate potential of the N type MIS transistor is a ground voltage VSS, and that of a P type MIS transistor 56 is the power supply voltage VDD. Thus, it is constituted as a source follower circuit for taking output out of the source. It is possible, by utilizing this electric potential generating device, to obtain a logic transformation circuit for stably switching between NOR operation and NAND operation.

公开(公告)号：US06285051B1

公开(公告)日：2001-09-04

申请号：US09310313

申请日：1999-05-12

申请人： Michihito Ueda ,  Takashi Ohtsuka

发明人： Michihito Ueda ,  Takashi Ohtsuka

IPC分类号： H01L2972

CPC分类号： H01L28/56

摘要： A low-leakage-current layer, made of BST in which the content of Ti deviates from its stoichiometric composition, is interposed between a high-dielectric-constant layer, made of BST with the stoichiometric composition, and an upper electrode. And a charge-storable dielectric film is made up of the high-dielectric-constant layer and the low-leakagecurrent layer. Such a BST film containing a larger number of Ti atoms than that defined by stoichiometry can suppress the leakage current to a larger degree. Also, if such a film is used, then the relative dielectric constant does not decrease so much as a BST film with the stoichiometric composition. Accordingly, the leakage current can be suppressed while minimizing the decrease in relative dielectric constant of the entire charge-storable dielectric film, which is a serial connection of capacitors, thus contributing to the downsizing of a semiconductor memory device. As a result, a semiconductor memory device, including a charge-storable dielectric film with decreased leakage current and enhanced charge storability, can be obtained.

摘要翻译： 由BST的含量偏离其化学计量组成的BST制成的低漏电流层插入由具有化学计量组成的BST制成的高介电常数层和上电极之间。 并且电荷存储电介质膜由高介电常数层和低漏电流层构成。 这样含有比化学计量定义的Ti原子数更多的BST膜可以更大程度地抑制漏电流。 此外，如果使用这样的膜，则相对介电常数不会像具有化学计量组成的BST膜那么多地降低。 因此，可以抑制泄漏电流，同时最小化作为电容器的串联连接的整个电荷存储电介质膜的相对介电常数的降低，从而有助于半导体存储器件的小型化。 结果，可以获得包括具有降低的漏电流和增强的电荷存储性的电荷存储电介质膜的半导体存储器件。

公开(公告)号：US20110299566A1

公开(公告)日：2011-12-08

申请号：US13207940

申请日：2011-08-11

申请人： Michihito Ueda ,  Hiroyuki Tanaka ,  Yukihiro Kaneko ,  Eiji Fujii

发明人： Michihito Ueda ,  Hiroyuki Tanaka ,  Yukihiro Kaneko ,  Eiji Fujii

IPC分类号： G01K7/36

CPC分类号： H01L37/02 ,  G01K7/36

摘要： A temperature sensor includes first and second lower electrodes, a ferroelectric layer having polarization, a semiconductor layer; and first to third upper electrodes. The second upper electrode is interposed between the first upper electrode and the third upper electrode in a plan view. The semiconductor layer includes a first channel disposed between the first upper electrode and the second upper electrode, and a second channel disposed between the second upper electrode and the third upper electrode. The ferroelectric layer includes a first ferroelectric part disposed below the first channel and a second ferroelectric part disposed below the second channel. A polarization direction of the first ferroelectric part is opposite to a polarization direction of the second first ferroelectric part. The temperature is calculated based on the output voltage from the second upper electrode and the voltage applied to the first upper electrode.

摘要翻译： 温度传感器包括第一和第二下部电极，具有极化的铁电体层，半导体层; 和第一至第三上电极。 第二上电极在平面图中插入在第一上电极和第三上电极之间。 半导体层包括设置在第一上电极和第二上电极之间的第一通道和设置在第二上电极和第三上电极之间的第二通道。 铁电层包括设置在第一通道下方的第一铁电体部分和设置在第二通道下方的第二铁电体部分。 第一铁电体部的偏振方向与第二第一强电介质部的偏振方向相反。 基于来自第二上电极的输出电压和施加到第一上电极的电压来计算温度。

公开(公告)号：US07022530B2

公开(公告)日：2006-04-04

申请号：US10311292

申请日：2002-04-03

申请人： Kiyoyuki Morita ,  Shoji Miyake ,  Michihito Ueda ,  Takashi Ohtsuka ,  Takashi Nishikawa

发明人： Kiyoyuki Morita ,  Shoji Miyake ,  Michihito Ueda ,  Takashi Ohtsuka ,  Takashi Nishikawa

IPC分类号： H01G7/06

CPC分类号： H01L29/802 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/092 ,  H01L27/10873 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/1203 ,  H01L27/1214 ,  H01L27/1222 ,  H01L28/55 ,  H01L29/1054 ,  H01L29/783 ,  H01L29/78687

摘要： A silicon oxide film 102, a Pt film 103x, a Ti film 104x and a PZT film 105x are deposited in this order over a Si substrate 101. The Si substrate 101 is placed in a chamber 106 so that the PZT film 105x is irradiated with an EHF wave 108. The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate 101.

摘要翻译： 依次沉积硅衬底101上的氧化硅膜102，Pt膜103x，Ti膜104x和PZT膜105x。 将Si衬底101放置在室106中，使得PZT膜105x被EHF波108照射。 用EHF波照射局部加热电介质膜，例如PZT膜。 结果，可以改善例如电介质膜的泄漏特性，而不会对形成在Si衬底101上的器件产生不利影响。