公开(公告)号：US06949780B2

公开(公告)日：2005-09-27

申请号：US10847323

申请日：2004-05-18

申请人： Michihito Ueda ,  Kenji Toyoda ,  Kiyoyuki Morita ,  Takashi Ohtsuka

发明人： Michihito Ueda ,  Kenji Toyoda ,  Kiyoyuki Morita ,  Takashi Ohtsuka

IPC分类号： H01L27/10 ,  G11C27/00 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： G11C27/005 ,  G11C11/54 ,  H01L2924/0002 ,  H01L2924/00

摘要： In an electric potential generating device, a source of an N type MIS transistor is mutually connected to that of a P type MIS transistor and also connected to an output terminal. A drain of an N type MIS transistor 54 is connected to a power supply voltage supply portion for supplying power supply voltage VDD, and a drain of the P type MIS transistor is connected to a ground. In addition, a substrate potential of the N type MIS transistor is a ground voltage VSS, and that of a P type MIS transistor 56 is the power supply voltage VDD. Thus, it is constituted as a source follower circuit for taking output out of the source. It is possible, by utilizing this electric potential generating device, to obtain a logic transformation circuit for stably switching between NOR operation and NAND operation.

公开(公告)号：US06285051B1

公开(公告)日：2001-09-04

申请号：US09310313

申请日：1999-05-12

申请人： Michihito Ueda ,  Takashi Ohtsuka

发明人： Michihito Ueda ,  Takashi Ohtsuka

IPC分类号： H01L2972

CPC分类号： H01L28/56

摘要： A low-leakage-current layer, made of BST in which the content of Ti deviates from its stoichiometric composition, is interposed between a high-dielectric-constant layer, made of BST with the stoichiometric composition, and an upper electrode. And a charge-storable dielectric film is made up of the high-dielectric-constant layer and the low-leakagecurrent layer. Such a BST film containing a larger number of Ti atoms than that defined by stoichiometry can suppress the leakage current to a larger degree. Also, if such a film is used, then the relative dielectric constant does not decrease so much as a BST film with the stoichiometric composition. Accordingly, the leakage current can be suppressed while minimizing the decrease in relative dielectric constant of the entire charge-storable dielectric film, which is a serial connection of capacitors, thus contributing to the downsizing of a semiconductor memory device. As a result, a semiconductor memory device, including a charge-storable dielectric film with decreased leakage current and enhanced charge storability, can be obtained.

摘要翻译： 由BST的含量偏离其化学计量组成的BST制成的低漏电流层插入由具有化学计量组成的BST制成的高介电常数层和上电极之间。 并且电荷存储电介质膜由高介电常数层和低漏电流层构成。 这样含有比化学计量定义的Ti原子数更多的BST膜可以更大程度地抑制漏电流。 此外，如果使用这样的膜，则相对介电常数不会像具有化学计量组成的BST膜那么多地降低。 因此，可以抑制泄漏电流，同时最小化作为电容器的串联连接的整个电荷存储电介质膜的相对介电常数的降低，从而有助于半导体存储器件的小型化。 结果，可以获得包括具有降低的漏电流和增强的电荷存储性的电荷存储电介质膜的半导体存储器件。

公开(公告)号：US06844582B2

公开(公告)日：2005-01-18

申请号：US10434358

申请日：2003-05-09

申请人： Michihito Ueda ,  Kenji Toyoda ,  Takashi Ohtsuka ,  Kiyoyuki Morita

发明人： Michihito Ueda ,  Kenji Toyoda ,  Takashi Ohtsuka ,  Kiyoyuki Morita

IPC分类号： G06N3/063 ,  G11C27/00 ,  H01L21/8246 ,  H01L21/8247 ,  H01L21/84 ,  H01L27/115 ,  H01L27/12 ,  H01L45/00 ,  H01L29/76 ,  H01L27/108 ,  G06F15/18 ,  G06G7/00

CPC分类号： H01L27/11502 ,  G06N3/0635 ,  G11C11/54 ,  G11C27/00 ,  H01L21/84 ,  H01L27/115 ,  H01L27/11507 ,  H01L27/11521 ,  H01L27/11585 ,  H01L27/1159 ,  H01L27/1203 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/144

摘要： A learning method of a semiconductor device of the present invention comprises a neuro device having a multiplier as a synapse in which a weight varies according to an input weight voltage, and functioning as a neural network system that processes analog data, comprising a step A of inputting predetermined input data to the neuro device and calculating an error between a target value of an output of the neuro device with respect to the input data and an actual output, a step B of calculating variation amount in the error by varying a weight of the multiplier thereafter, and a step C of varying the weight of the multiplier based on the variation amount in the error, wherein in the steps B and C, after inputting a reset voltage for setting the weight to a substantially constant value to the multiplier as the weight voltage, the weight is varied by inputting the weight voltage corresponding to the weight to be varied.

摘要翻译： 本发明的半导体器件的学习方法包括具有倍增器作为突触的神经器件，其中重量根据输入重量电压而变化，并且用作处理模拟数据的神经网络系统，其包括步骤A的步骤A 向神经装置输入预定的输入数据并计算神经装置的输出的目标值相对于输入数据与实际输出之间的误差;步骤B，通过改变神经元的重量来计算误差的变化量; 之后的乘法器，以及基于误差变化量来改变乘法器的权重的步骤C，其中在步骤B和C中，在输入用于将权重设定为基本恒定值的复位电压之后， 重量电压，通过输入与要变化的重量相对应的重量电压来改变重量。

公开(公告)号：US06541278B2

公开(公告)日：2003-04-01

申请号：US09492350

申请日：2000-01-27

申请人： Kiyoyuki Morita ,  Takashi Ohtsuka ,  Michihito Ueda

发明人： Kiyoyuki Morita ,  Takashi Ohtsuka ,  Michihito Ueda

IPC分类号： C23C1606

CPC分类号： H01L29/513 ,  C23C16/409 ,  C23C16/4485 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28291 ,  H01L21/31691 ,  H01L29/516 ,  H01L29/517 ,  H01L29/518

摘要： A semiconductor substrate is placed within a housing. By supplying organometallic complexes and carbon dioxide in a supercritical state into the housing, a BST thin film is formed on a platinum thin film, while at the same time, carbon compounds, which are produced when the BST thin film is formed are removed. The solubility of carbon compounds in the supercritical carbon dioxide is very high, and yet the viscosity of the supercritical carbon dioxide is low. Accordingly, the carbon compounds are removable efficiently from the BST thin film. An oxide or nitride film may also be formed by performing oxidation or nitriding at a low temperature using water in a supercritical or subcritical state, for example.

摘要翻译： 将半导体衬底放置在壳体内。 通过将超临界状态的有机金属配合物和二氧化碳供给到壳体中，在铂薄膜上形成BST薄膜，同时除去形成BST薄膜时产生的碳化合物。 碳化合物在超临界二氧化碳中的溶解度非常高，而超临界二氧化碳的粘度低。 因此，碳化合物可从BST薄膜有效地去除。 氧化物或氮化物膜也可以通过使用例如超临界或亚临界状态的水在低温下进行氧化或氮化来形成。

公开(公告)号：US07022530B2

公开(公告)日：2006-04-04

申请号：US10311292

申请日：2002-04-03

申请人： Kiyoyuki Morita ,  Shoji Miyake ,  Michihito Ueda ,  Takashi Ohtsuka ,  Takashi Nishikawa

发明人： Kiyoyuki Morita ,  Shoji Miyake ,  Michihito Ueda ,  Takashi Ohtsuka ,  Takashi Nishikawa

IPC分类号： H01G7/06

CPC分类号： H01L29/802 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/092 ,  H01L27/10873 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/1203 ,  H01L27/1214 ,  H01L27/1222 ,  H01L28/55 ,  H01L29/1054 ,  H01L29/783 ,  H01L29/78687

摘要： A silicon oxide film 102, a Pt film 103x, a Ti film 104x and a PZT film 105x are deposited in this order over a Si substrate 101. The Si substrate 101 is placed in a chamber 106 so that the PZT film 105x is irradiated with an EHF wave 108. The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate 101.

摘要翻译： 依次沉积硅衬底101上的氧化硅膜102，Pt膜103x，Ti膜104x和PZT膜105x。 将Si衬底101放置在室106中，使得PZT膜105x被EHF波108照射。 用EHF波照射局部加热电介质膜，例如PZT膜。 结果，可以改善例如电介质膜的泄漏特性，而不会对形成在Si衬底101上的器件产生不利影响。

公开(公告)号：US06847071B2

公开(公告)日：2005-01-25

申请号：US10161696

申请日：2002-06-05

申请人： Michihito Ueda ,  Kenji Toyoda ,  Kiyoyuki Morita ,  Takashi Ohtsuka

发明人： Michihito Ueda ,  Kenji Toyoda ,  Kiyoyuki Morita ,  Takashi Ohtsuka

IPC分类号： H01L27/10 ,  G11C27/00 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： G11C27/005 ,  G11C11/54 ,  H01L2924/0002 ,  H01L2924/00

摘要： In an electric potential generating device, a source of an N type MIS transistor is mutually connected to that of a P type MIS transistor and also connected to an output terminal. A drain of an N type MIS transistor 54 is connected to a power supply voltage supply portion for supplying power supply voltage VDD, and a drain of the P type MIS transistor is connected to a ground. In addition, a substrate potential of the N type MIS transistor is a ground voltage VSS, and that of a P type MIS transistor 56 is the power supply voltage VDD. Thus, it is constituted as a source follower circuit for taking output out of the source. It is possible, by utilizing this electric potential generating device, to obtain a logic transformation circuit for stably switching between NOR operation and NAND operation.

摘要翻译： 在电位产生装置中，N型MIS晶体管的源极相互连接到P型MIS晶体管的源极，并且还连接到输出端子。 N型MIS晶体管54的漏极连接到用于提供电源电压VDD的电源电压供应部分，并且P型MIS晶体管的漏极连接到地。 此外，N型MIS晶体管的衬底电位为接地电压VSS，P型MIS晶体管56的衬底电位为电源电压VDD。 因此，它构成为用于从源极输出的源极跟随器电路。 通过利用该电位产生装置可以获得用于在NOR操作和NAND操作之间稳定切换的逻辑变换电路。

公开(公告)号：US06713316B2

公开(公告)日：2004-03-30

申请号：US10230249

申请日：2002-08-29

申请人： Kiyoyuki Morita ,  Takashi Ohtsuka ,  Michihito Ueda

发明人： Kiyoyuki Morita ,  Takashi Ohtsuka ,  Michihito Ueda

IPC分类号： H01L2100

CPC分类号： H01L29/513 ,  C23C16/409 ,  C23C16/4485 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28291 ,  H01L21/31691 ,  H01L29/516 ,  H01L29/517 ,  H01L29/518

摘要： A semiconductor substrate is placed within a housing. By supplying organometallic complexes and carbon dioxide in a supercritical state into the housing, a BST thin film is formed on a platinum thin film, while at the same time, carbon compounds, which are produced when the BST thin film is formed, are removed. The solubility of carbon compounds in the supercritical carbon dioxide is very high, and yet the viscosity of the supercritical carbon dioxide is low. Accordingly, the carbon compounds are removable efficiently from the BST thin film. An oxide or nitride film may also be formed by performing oxidation or nitriding at a low temperature using water in a supercritical or subcritical state, for example.

公开(公告)号：US06859381B2

公开(公告)日：2005-02-22

申请号：US10791781

申请日：2004-03-04

申请人： Takashi Ohtsuka ,  Kiyoyuki Morita ,  Michihito Ueda

发明人： Takashi Ohtsuka ,  Kiyoyuki Morita ,  Michihito Ueda

IPC分类号： G11C11/22 ,  G11C16/04 ,  H01L21/8246 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788

CPC分类号： H01L27/11502 ,  G11C11/22 ,  G11C16/0408 ,  H01L27/11507 ,  H01L29/42324 ,  H01L29/7881

摘要： A nonvolatile semiconductor storage element, which is provided with a floating gate electrode, and a dielectric capacitor and a ferroelectric capacitor both connected to the floating gate electrode. By applying voltage between a first polarization voltage supplying terminal and a second polarization voltage supplying terminal, polarization serving as information is generated in the ferroelectric film of the ferroelectric capacitor. Additionally, when a read-out voltage is applied between the ground terminal and the power source voltage terminal that are in connection with the source and drain regions, the MISFET is turned either on or off in correspondence to the state of the charge held in the floating gate electrode, and thus information within the floating gate electrode is read out.

摘要翻译： 具有浮置栅电极的非易失性半导体存储元件，以及与浮置栅电极连接的介质电容器和强电介质电容器。 通过在第一极化电压供给端子和第二极化电压供给端子之间施加电压，在铁电体电容器的铁电体膜中产生作为信息的极化。 另外，当在与源极和漏极区域连接的接地端子和电源电压端子之间施加读出电压时，与保持在电源电压的电荷的状态相对应地，MISFET被接通或断开 浮栅电极，从而读出浮栅电极内的信息。

公开(公告)号：US06720596B2

公开(公告)日：2004-04-13

申请号：US09977310

申请日：2001-10-16

申请人： Takashi Ohtsuka ,  Kiyoyuki Morita ,  Michihito Ueda

发明人： Takashi Ohtsuka ,  Kiyoyuki Morita ,  Michihito Ueda

IPC分类号： H01L2976

CPC分类号： H01L27/11502 ,  G11C11/22 ,  G11C16/0408 ,  H01L27/11507 ,  H01L29/42324 ,  H01L29/7881

摘要： A nonvolatile semiconductor storage element, which is provided with a floating gate electrode, and a dielectric capacitor and a ferroelectric capacitor both connected to the floating gate electrode. By applying voltage between a first polarization voltage supplying terminal and a second polarization voltage supplying terminal, polarization serving as information is generated in the ferroelectric film of the ferroelectric capacitor. Additionally, when a read-out voltage is applied between the ground terminal and the power source voltage terminal that are in connection with the source and drain regions, the MISFET is turned either on or off in correspondence to the state of the charge held in the floating gate electrode, and thus information within the floating gate electrode is read out.

摘要翻译： 具有浮置栅电极的非易失性半导体存储元件，以及与浮置栅电极连接的介质电容器和强电介质电容器。 通过在第一极化电压供给端子和第二极化电压供给端子之间施加电压，在铁电体电容器的铁电体膜中产生作为信息的极化。 另外，当在与源极和漏极区域连接的接地端子和电源电压端子之间施加读出电压时，与保持在电源电压的电荷的状态相对应地，MISFET被接通或断开 浮栅电极，从而读出浮栅电极内的信息。

公开(公告)号：US06238966B1

公开(公告)日：2001-05-29

申请号：US09379857

申请日：1999-08-24

申请人： Michihito Ueda ,  Takashi Ohtsuka

发明人： Michihito Ueda ,  Takashi Ohtsuka

IPC分类号： H01L2972

CPC分类号： H01L28/56

摘要： A low-leakage-current layer, made of BST in which the content of Ti deviates from its stoichiometric composition, is interposed between a high-dielectric-constant layer, made of BST with the stoichiometric composition, and an upper electrode. And a charge-storable dielectric film is made up of the high-dielectric-constant layer and the low-leakage-current layer. Such a BST film containing a larger number of Ti atoms than that defined by stoichiometry can suppress the leakage current to a larger degree. Also, if such a film is used, then the relative dielectric constant does not decrease so much as a BST film with the stoichiometric composition. Accordingly, the leakage current can be suppressed while minimizing the decrease in relative dielectric constant of the entire charge-storable dielectric film, which is a serial connection of capacitors, thus contributing to the downsizing of a semiconductor memory device. As a result, a semiconductor memory device, including a charge-storable dielectric film with decreased leakage current and enhanced charge storability, can be obtained.

摘要翻译： 由BST的含量偏离其化学计量组成的BST制成的低漏电流层插入由具有化学计量组成的BST制成的高介电常数层和上电极之间。 并且电荷存储电介质膜由高介电常数层和低漏电流层构成。 这样含有比化学计量定义的Ti原子数更多的BST膜可以更大程度地抑制漏电流。 此外，如果使用这样的膜，则相对介电常数不会像具有化学计量组成的BST膜那么多地降低。 因此，可以抑制泄漏电流，同时最小化作为电容器的串联连接的整个电荷存储电介质膜的相对介电常数的降低，从而有助于半导体存储器件的小型化。 结果，可以获得包括具有降低的漏电流和增强的电荷存储性的电荷存储电介质膜的半导体存储器件。