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1.发明申请公开(公告)号：US20060070494A1
公开(公告)日：2006-04-06
申请号：US11284910
申请日：2005-11-23
IPC分类号： B22F9/20
CPC分类号： B82Y10/00 , H01L21/28273 , H01L21/28282 , H01L29/42332
摘要： An object of the present invention is to provide a method of forming fine particles on a substrate in which reoxidization of reduced fine particles is suppressed. Reduced fine particles (FeO fine particles) are formed by embedding metal oxide fine particles (Fe2O3 fine particles) fixed on a p type silicon semiconductor substrate into a silicon oxidized film, and carrying out a heat treatment in a reducing gas atmosphere. Presence of the silicon oxidized film enables suppression of reoxidization of the reduced fine particles (FeO fine particles) due to exposure to the ambient air.
摘要翻译： 本发明的目的是提供一种在抑制还原的微粒的再氧化的基板上形成微粒的方法。 通过将固定在p型硅半导体衬底上的金属氧化物微粒（Fe 2 O 3 O 3微粒）嵌入到硅氧化膜中而形成还原的微粒（FeO微粒） ，并在还原气体气氛中进行热处理。 硅氧化膜的存在能够抑制由于暴露于环境空气而导致的还原的微粒（FeO微粒）的再氧化。
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2.发明授权公开(公告)号：US07419529B2
公开(公告)日：2008-09-02
申请号：US11284910
申请日：2005-11-23
IPC分类号： B22F9/20
CPC分类号： B82Y10/00 , H01L21/28273 , H01L21/28282 , H01L29/42332
摘要： An object of the present invention is to provide a method of forming fine particles on a substrate in which reoxidization of reduced fine particles is suppressed. Reduced fine particles (FeO fine particles) are formed by embedding metal oxide fine particles (Fe2O3 fine particles) fixed on a p type silicon semiconductor substrate into a silicon oxidized film, and carrying out a heat treatment in a reducing gas atmosphere. Presence of the silicon oxidized film enables suppression of reoxidization of the reduced fine particles (FeO fine particles) due to exposure to the ambient air.
摘要翻译： 本发明的目的是提供一种在抑制还原的微粒的再氧化的基板上形成微粒的方法。 通过将固定在p型硅半导体衬底上的金属氧化物微粒（Fe 2 O 3 O 3微粒）嵌入到硅氧化膜中而形成还原的微粒（FeO微粒） ，并在还原气体气氛中进行热处理。 硅氧化膜的存在能够抑制由于暴露于环境空气而导致的还原的微粒（FeO微粒）的再氧化。
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公开(公告)号：US07419849B2
公开(公告)日：2008-09-02
申请号：US11878691
申请日：2007-07-26
IPC分类号： H01L51/40
CPC分类号： H01L29/7613 , B82Y10/00 , H01L29/66439 , H01L49/006 , Y10S438/962 , Y10S977/773
摘要： The present invention provides a method for production of a single electron semiconductor element (SET) in which a quantum dot is selectively arranged in a nano gap between fine electrodes, whereby the product yield is significantly improved, leading to excellent practical applicability. The method for production of SET of the present invention is characterized in that a solution containing ferritin including a metal or semiconductor particle therein, and a nonionic surfactant is dropped on a substrate having a source electrode and a drain electrode formed by laminating a titanium film and a film of a metal other than titanium, whereby the ferritin is selectively arranged in a nano gap between the source electrode/drain electrode.
摘要翻译： 本发明提供一种单电子半导体元件（SET）的制造方法，其中量子点选择性地排列在细电极之间的纳米间隙中，从而显着提高了产品产率，从而实现了优异的实用性。 本发明的SET的制造方法的特征在于，将含有金属或半导体粒子的铁蛋白和非离子表面活性剂的溶液滴落在具有源极电极和漏电极的基板上，所述源极和漏极通过层叠钛膜和 除钛以外的金属的膜，由此铁素体选择性地排列在源电极/漏电极之间的纳米间隙中。
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公开(公告)号：US20080108227A1
公开(公告)日：2008-05-08
申请号：US11878691
申请日：2007-07-26
IPC分类号： H01L21/28
CPC分类号： H01L29/7613 , B82Y10/00 , H01L29/66439 , H01L49/006 , Y10S438/962 , Y10S977/773
摘要： The present invention provides a method for production of a single electron semiconductor element (SET) in which a quantum dot is selectively arranged in a nano gap between fine electrodes, whereby the product yield is significantly improved, leading to excellent practical applicability. The method for production of SET of the present invention is characterized in that a solution containing ferritin including a metal or semiconductor particle therein, and a nonionic surfactant is dropped on a substrate having a source electrode and a drain electrode formed by laminating a titanium film and a film of a metal other than titanium, whereby the ferritin is selectively arranged in a nano gap between the source electrode/drain electrode. In the method for production of SET of the present invention, the metal or semiconductor particle can be fixed as a quantum dot at a suitable position in the nano gap between the source electrode/drain electrode following decomposition of ferritin, and in addition, formation of unnecessary quantum dot can be suppressed.
摘要翻译： 本发明提供一种单电子半导体元件（SET）的制造方法，其中量子点选择性地排列在细电极之间的纳米间隙中，从而显着提高了产品产率，从而实现了优异的实用性。 本发明的SET的制造方法的特征在于，将含有金属或半导体粒子的铁蛋白和非离子表面活性剂的溶液滴落在具有源极电极和漏电极的基板上，所述源极和漏极通过层叠钛膜和 除钛以外的金属的膜，由此铁素体选择性地排列在源电极/漏电极之间的纳米间隙中。 在本发明的SET的制造方法中，金属或半导体粒子可以在铁蛋白分解后的源电极/漏电极之间的纳米间隙的适当位置作为量子点固定，另外，形成 可以抑制不必要的量子点。
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5.发明授权公开(公告)号：US07919596B2
公开(公告)日：2011-04-05
申请号：US12320556
申请日：2009-01-29
IPC分类号： C07K14/00 , H01L21/00 , H01L21/314 , H01L21/471
摘要： To provide a method of arranging ferritin by which a high rate of the number of the molecular film spots on which sole ferritin molecule was arranged in effect, with respect to total number of the molecular film spots provided for arranging ferritin (sole arrangement rate) is achieved is objected to. Specifically, in Fer8 ferritin having a sequence excluding 7 amino acids of from the second to the eighth, from an amino acid sequence (Fer0 sequence) translated from a naturally occurring DNA sequence, lysine at position 91 is substituted with glutamic acid.
摘要翻译： 为了提供一种安排铁蛋白的方法，相对于提供用于安排铁蛋白的总分子膜点数（单独排列速率），通过该铁蛋白排列高分子膜斑点的数量，单个铁蛋白分子排列有效的方法是： 实现是反对的。 具体而言，在来自第二至第八的7个氨基酸序列的Fer8铁蛋白中，从天然存在的DNA序列翻译的氨基酸序列（Fer0序列）中，91位的赖氨酸被谷氨酸取代。
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公开(公告)号：US20050042386A1
公开(公告)日：2005-02-24
申请号：US10864881
申请日：2004-06-10
IPC分类号： B05D3/02 , H01L21/266 , H01L29/12 , H01L29/15
CPC分类号： H01L29/127 , B82Y10/00 , B82Y30/00 , C01P2004/64 , H01L21/266 , H01L29/158 , Y10S438/917 , Y10S438/918 , Y10S438/962
摘要： A method of the production of a nanoparticle dispersed composite material capable of controlling a particle size and a three dimensional arrangement of the nanoparticles is provided. The method of the production of a nanoparticle dispersed composite material of the present invention includes a step (a) of arranging a plurality of core fine particle-protein complexes having a core fine particle, which comprises an inorganic material, internally included within a protein on the top surface of a substrate, a step (b) of removing the protein, a step (c) of conducting ion implantation from the top surface of the substrate, and a step (d) of forming nanoparticles including the ion implanted by the ion implantation as a raw material, inside of the substrate.
摘要翻译： 提供了能够控制纳米颗粒的粒度和三维排列的纳米颗粒分散复合材料的制造方法。 制备本发明的纳米颗粒分散复合材料的方法包括：将包含内部包含在蛋白质内的无机材料的多个具有核心细颗粒的核心细颗粒 - 蛋白复合物排列在 衬底的顶表面，去除蛋白质的步骤（b），从衬底的顶表面进行离子注入的步骤（c）和形成纳米颗粒的步骤（d），其包括由离子注入的离子 作为原料植入，在基板的内部。
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7.发明申请公开(公告)号：US20090187010A1
公开(公告)日：2009-07-23
申请号：US12320556
申请日：2009-01-29
IPC分类号： C07K17/00
摘要： To provide a method of arranging ferritin by which a high rate of the number of the molecular film spots on which sole ferritin molecule was arranged in effect, with respect to total number of the molecular film spots provided for arranging ferritin (sole arrangement rate) is achieved is objected to. Specifically, in Fer8 ferritin having a sequence excluding 7 amino acids of from the second to the eighth, from an amino acid sequence (Fer0 sequence) translated from a naturally occurring DNA sequence, lysine at position 91 is substituted with glutamic acid.
摘要翻译： 为了提供一种安排铁蛋白的方法，相对于提供用于安排铁蛋白的总分子膜点数（单独排列速率），通过该铁蛋白排列高分子膜斑点的数量，单个铁蛋白分子排列有效的方法是： 实现是反对的。 具体而言，在来自第二至第八的7个氨基酸序列的Fer8铁蛋白中，从天然存在的DNA序列翻译的氨基酸序列（Fer0序列）中，91位的赖氨酸被谷氨酸取代。
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8.发明授权公开(公告)号：US07738280B2
公开(公告)日：2010-06-15
申请号：US12552735
申请日：2009-09-02
申请人： Shigeo Yoshii , Ichiro Yamashita
发明人： Shigeo Yoshii , Ichiro Yamashita
CPC分类号： H01L27/101 , G11C13/0002 , G11C2213/15 , G11C2213/34 , H01L45/04 , H01L45/12 , H01L45/1246 , H01L45/146 , H01L45/1633 , Y10S977/773 , Y10S977/81 , Y10S977/943
摘要： An object of the present invention is to provide a resistive nonvolatile memory element having an electric current path which can be realized by a simple and convenient process, and capable of allowing for micro-fabrication.The resistive nonvolatile memory element of the present invention includes first electrode 203, oxide semiconductor layer 204a which is formed on the first electrode 203 and the resistance of which is altered depending on the applied voltage, metal nanoparticles 204b having a diameter of between 2 nm and 10 nm arranged on the oxide semiconductor layer 204a, tunnel barrier layer 204c formed on the oxide semiconductor layer 204a and on the metal nanoparticles 204b, and second electrode 206 formed on the tunnel barrier layer 204c, in which the metal nanoparticles 204b are in contact with the oxide semiconductor layer 204a.
摘要翻译： 本发明的目的是提供一种具有电流路径的电阻性非易失性存储元件，该电流路径可以通过简单且方便的工艺实现并能够进行微型制造。 本发明的电阻性非易失性存储元件包括：第一电极203，形成在第一电极203上，其电阻根据施加电压而改变的氧化物半导体层204a;直径在2nm至 布置在氧化物半导体层204a上的10nm，形成在氧化物半导体层204a上的金属纳米颗粒204b上的隧道势垒层204c和形成在隧道势垒层204c上的第二电极206，其中金属纳米颗粒204b与 氧化物半导体层204a。
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公开(公告)号：US07041530B2
公开(公告)日：2006-05-09
申请号：US10864881
申请日：2004-06-10
IPC分类号： H01L51/40
CPC分类号： H01L29/127 , B82Y10/00 , B82Y30/00 , C01P2004/64 , H01L21/266 , H01L29/158 , Y10S438/917 , Y10S438/918 , Y10S438/962
摘要： A method of the production of a nanoparticle dispersed composite material capable of controlling a particle size and a three dimensional arrangement of the nanoparticles is provided. The method of the production of a nanoparticle dispersed composite material of the present invention includes a step (a) of arranging a plurality of core fine particle-protein complexes having a core fine particle, which comprises an inorganic material, internally included within a protein on the top surface of a substrate, a step (b) of removing the protein, a step (c) of conducting ion implantation from the top surface of the substrate, and a step (d) of forming nanoparticles including the ion implanted by the ion implantation as a raw material, inside of the substrate.
摘要翻译： 提供了能够控制纳米颗粒的粒度和三维排列的纳米颗粒分散复合材料的制造方法。 制备本发明的纳米颗粒分散复合材料的方法包括：将包含内部包含在蛋白质内的无机材料的多个具有核心细颗粒的核心细颗粒 - 蛋白复合物排列在 衬底的顶表面，去除蛋白质的步骤（b），从衬底的顶表面进行离子注入的步骤（c）和形成纳米颗粒的步骤（d），其包括由离子注入的离子 作为原料植入，在基板的内部。
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10.发明授权Image output system having image log recording function, and log recording method in image output system 有权具有图像记录功能的图像输出系统和图像输出系统中的日志记录方法公开(公告)号：US08040544B2
公开(公告)日：2011-10-18
申请号：US11269993
申请日：2005-11-09
IPC分类号： G06F3/12
CPC分类号： H04N1/32122 , H04N1/32128 , H04N2201/3205 , H04N2201/3214 , H04N2201/3215 , H04N2201/3219 , H04N2201/3223 , H04N2201/3226 , H04N2201/3274 , H04N2201/3277
摘要： An image output system includes input section for inputting an image or data, instruction acceptance section for accepting an instruction of outputting the input image or an image generated from the input data, image output section for outputting the instructed image, and log-recording section for recording an image log, including at least the image to be output and the result information of an output process for the image to be output, irrespective of whether or not the output of the instructed image has been completed successfully.
摘要翻译： 图像输出系统包括用于输入图像或数据的输入部分，用于接受输出输入图像的指令或从输入数据生成的图像的指令接受部分，用于输出指示图像的图像输出部分，以及用于输出指示图像的日志记录部分 记录图像记录，至少包括要输出的图像和要输出的图像的输出处理的结果信息，而不管指示的图像的输出是否已经成功完成。
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