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公开(公告)号：US5893962A
公开(公告)日：1999-04-13
申请号：US711204
申请日：1996-09-09
IPC分类号： H05H1/46 , C23C16/44 , H01J37/32 , H01L21/205 , H01L21/285 , H01L21/302 , H01L21/304 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/32862 , C23C16/4405 , Y10S156/916
摘要： An electrode unit of a thermal CVD apparatus is used to generate plasma discharge for an in-situ cleaning process. The electrode unit is configured by a substrate holder and a shield member connected to a high frequency power supply, the gas supply section electrically grounded, and an auxiliary electrode disposed in the gas supply section. In a film deposition process, a reactive gas is supplied from the gas supply section, and the reactive gas is excited in a space in front of a substrate to deposit a thin film onto the substrate. In a periodical in-situ cleaning process, a cleaning gas is supplied from the gas supply section and a cleaning discharge is generated to remove unwanted films deposited on the substrate holder and the shield member. The auxiliary electrode causes the cleaning discharge to be concentrated in a space around unwanted films.
摘要翻译： 热CVD装置的电极单元用于产生用于原位清洗工艺的等离子体放电。 电极单元由基板保持器和连接到高频电源的屏蔽构件构成，气体供给部电接地，以及设置在气体供给部中的辅助电极。 在成膜工序中，由气体供给部供给反应气体，在基板前方的空间内激发反应性气体，在基板上析出薄膜。 在周期性的原位清洗过程中，从气体供应部分提供清洁气体，并且产生清洁排放物以去除沉积在基板保持器和屏蔽构件上的不需要的膜。 辅助电极使得清洁放电集中在不期望的膜周围的空间中。
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公开(公告)号：US5676758A
公开(公告)日：1997-10-14
申请号：US635492
申请日：1996-04-22
申请人： Shinya Hasegawa , Shigeru Mizuno , Kazuhito Watanabe , Nobuyuki Takahashi , Manabu Tagami , Takanori Yoshimura , Hajime Sahase
发明人： Shinya Hasegawa , Shigeru Mizuno , Kazuhito Watanabe , Nobuyuki Takahashi , Manabu Tagami , Takanori Yoshimura , Hajime Sahase
IPC分类号： C23C16/50 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/509 , H01J37/32 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/455 , C23C16/45568 , C23C16/45591 , C23C16/4583 , C23C16/509 , H01J37/3244
摘要： A CVD mechanism includes a reactor, a substrate holder, a heating apparatus for heating the substrate holder, a reaction gas supply plate for supplying reaction gas into the reactor, and at least two cylinders disposed in a concentric form on the substrate-facing surface of the reaction gas supply plate so that reaction gas is supplied from an inward portion of each cylinder in the reaction gas supply plate. A power supply mechanism for supplying power to the reaction gas supply plate and the substrate holder, and ring magnets disposed in the upper and lower portions of the reactor are provided so that magnetic lines of force passing through a plasma space are generated by the facing magnetic pole parts of the respective magnets.
摘要翻译： CVD机构包括反应器，基板保持器，用于加热基板保持器的加热装置，用于将反应气体供应到反应器中的反应气体供给板，以及至少两个以同心形式设置在圆筒形基板的表面的基板 反应气体供给板，使得反应气体从反应气体供给板中的每个气缸的向内部分供给。 设置用于向反应气体供给板和基板保持器供电的供电机构和设置在电抗器的上部和下部的环形磁铁，使得通过等离子体空间的磁力线由面对的磁体 各个磁体的极部分。
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公开(公告)号：US5766363A
公开(公告)日：1998-06-16
申请号：US634873
申请日：1996-04-19
IPC分类号： H05B3/14 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/4585 , C23C16/46
摘要： A heater is used in a CVD apparatus. In the CVD apparatus, reactive gas is supplied through a reactive gas supply plate to a substrate on a substrate holder to deposit a film on the substrate, and a purge gas supply passage is formed by placing a shield mechanism around the substrate holder, the shield mechanism including a ring plate disposed close to the outer periphery of the substrate. During film deposition, purge gas supplied through the purge gas supply passage is blown off from a clearance between the substrate and the ring plate, thereby preventing a film from being deposited on the rear surface of the substrate or the like. A heating element is arranged in a space in the purge gas supply passage close to but not contacting the substrate holder. The heating element is preferably a ceramic heater.
摘要翻译： 在CVD装置中使用加热器。 在CVD装置中，反应性气体通过反应性气体供应板供应到衬底保持器上的衬底以在衬底上沉积膜，并且通过将屏蔽机构放置在衬底保持器周围形成吹扫气体供给通道，屏蔽 机构包括靠近基板的外周设置的环板。 在膜沉积期间，通过吹扫气体供应通道供应的吹扫气体从基板和环板之间的间隙吹出，从而防止膜沉积在基板的后表面等上。 加热元件布置在靠近但不接触衬底保持器的吹扫气体供给通道的空间中。 加热元件优选为陶瓷加热器。
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公开(公告)号：US6059985A
公开(公告)日：2000-05-09
申请号：US826735
申请日：1997-04-04
IPC分类号： H01L21/28 , H01L21/00 , H01L21/20 , H01L21/205 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L21/68
CPC分类号： H01L21/0209
摘要： A method of processing a substrate has the following processes. After depositing a thin film onto a substrate by a CVD method, the front surface of the substrate is brought close to a gas supply surface of a gas supply mechanism to have a desired interval without making contact between the front surface and the gas supply surface. Afterwards, an etching gas is supplied into a back space of the substrate to generate plasma there, and further a purge gas is also supplied into a space between the gas supply surface and the substrate so that the purge gas flows into the back space through a peripheral-edge region of the substrate. This purge gas prevents radicals included in the plasma from diffusing into the space between the gas supply surface and the substrate.
摘要翻译： 处理基板的方法具有以下处理。 在通过CVD法将薄膜沉积到基板上之后，使基板的前表面靠近气体供给机构的气体供给表面，使其具有期望的间隔而不会在前表面和气体供给表面之间接触。 然后，将蚀刻气体供给到基板的后部空间中以在其中产生等离子体，并且还将吹扫气体供应到气体供给表面和基板之间的空间中，使得净化气体通过 衬底的周边边缘区域。 这种净化气体防止包括在等离子体中的自由基扩散到气体供应表面和基底之间的空间中。
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公开(公告)号：US5728629A
公开(公告)日：1998-03-17
申请号：US311681
申请日：1994-09-23
IPC分类号： C23C16/44 , C23C16/54 , H01L21/205 , H01L21/285
CPC分类号： C23C16/4404 , Y10S438/905 , Y10S438/958
摘要： A process for forming a thin film by chemical vapor deposition which comprises repeating a substrate processing step on one or more substrates placed inside a reaction chamber by introducing a reaction gas inside the reaction chamber. The process includes a step of introducing a passivation gas or the like for passivating the surface of a thin film deposited on the fixing jig or other peripheral members between substrate processing steps. The passivation gas is, for example, an adsorbent gas or an oxidizing gas. More specifically, an example of an adsorbent gas is a mixture of an inert gas and from 0.1 to 10% of NH.sub.3 gas or SiH.sub.2 Cl.sub.2 gas, and an example of an oxidizing gas is a mixture of an inert gas and at least one selected from the group of oxygen, nitrogen, monoxide, and nitrogen dioxide. The inert gas may also be replaced with N.sub.2 gas.
摘要翻译： 一种通过化学气相沉积法形成薄膜的方法，包括通过在反应室内引入反应气体，在放置在反应室内的一个或多个基材上重复进行基板处理步骤。 该方法包括在衬底处理步骤之间引入钝化气体等以钝化沉积在固定夹具或其它周边部件上的薄膜的表面的步骤。 钝化气体例如是吸附气体或氧化气体。 更具体地，吸附气体的实例是惰性气体和0.1至10％的NH 3气体或SiH 2 Cl 2气体的混合物，氧化气体的实例是惰性气体和选自以下的至少一种的混合物： 一组氧气，氮气，一氧化氮和二氧化氮。 惰性气体也可以用N 2气体代替。
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公开(公告)号：US20060044626A1
公开(公告)日：2006-03-02
申请号：US11212658
申请日：2005-08-29
申请人： Nobuya Kishi , Takanori Yoshimura
发明人： Nobuya Kishi , Takanori Yoshimura
IPC分类号： H04N1/04
CPC分类号： H04N1/4097 , H04N1/1912
摘要： The image reading device is provided with a plurality of image reading portions, a storage portion, and an image processing portion. The image reading portions are provided with a plurality of light receiving elements that are each lined up in the main scanning direction perpendicular to the original transport direction, and read an image on an original that is being transported on an original transport path, in positions that mutually differ in the original transport direction. The storage portion stores, as temporary image data, each of a plurality of image data sets relating to the image on the original, obtained through the plurality of image reading portions. The image processing portion compares the plurality of temporary image data sets for each pixel, and creates image data relating to the image on the original based on a result of the comparison.
摘要翻译： 图像读取装置设置有多个图像读取部，存储部和图像处理部。 图像读取部分设置有多个光接收元件，每个光接收元件在垂直于原始传送方向的主扫描方向上排列，并且在原始传送路径上正在传送的原稿上读取图像， 原运输方向相互不同。 存储部分将通过多个图像读取部分获得的与原件上的图像相关的多个图像数据集中的每一个作为临时图像数据存储。 图像处理部分对每个像素的多个临时图像数据集进行比较，并且基于比较结果创建与原始图像相关的图像数据。
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