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    Semiconductor light emitting device
    1.
    发明授权
    Semiconductor light emitting device 失效
    半导体发光器件

    公开(公告)号：US08653498B2

    公开(公告)日：2014-02-18

    申请号：US13032943

    申请日：2011-02-23

    申请人： Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Takahiro Sato ,  Toshiyuki Oka ,  Shinya Nunoue

    发明人： Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Takahiro Sato ,  Toshiyuki Oka ,  Shinya Nunoue

    IPC分类号： H01L33/40 ,  H01L33/04

    CPC分类号： H01L33/382 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42

    摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structural body, a first electrode; and a second electrode. The stacked structural body includes a first semiconductor layer of n-type, a second semiconductor layer of p-type, and a light emitting portion provided therebetween. The first electrode includes a first contact electrode portion. The second electrode includes a second contact electrode portion and a p-side pad electrode. A sheet resistance of the second contact electrode portion is lower than a sheet resistance of the first semiconductor layer. The p-side pad electrode is provided farther inward than a circumscribed rectangle of the first contact electrode portion, and the first contact electrode portion is provided farther outward than a circumscribed rectangle of the p-side pad electrode.

    摘要翻译： 根据一个实施例，半导体发光器件包括：层叠结构体，第一电极; 和第二电极。 层叠结构体包括n型的第一半导体层，p型的第二半导体层和设置在其间的发光部。 第一电极包括第一接触电极部分。 第二电极包括第二接触电极部分和p侧焊盘电极。 第二接触电极部分的薄层电阻低于第一半导体层的薄层电阻。 p侧焊盘电极比第一接触电极部分的外接矩形更靠内侧设置，并且第一接触电极部分比p侧焊盘电极的外接矩形更远地设置。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    2.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
    半导体发光器件

    公开(公告)号：US20120032139A1

    公开(公告)日：2012-02-09

    申请号：US13032943

    申请日：2011-02-23

    申请人： Shigeya KIMURA ,  Taisuke Sato ,  Toshihide Ito ,  Takahiro Sato ,  Toshiyuki Oka ,  Shinya Nunoue

    发明人： Shigeya KIMURA ,  Taisuke Sato ,  Toshihide Ito ,  Takahiro Sato ,  Toshiyuki Oka ,  Shinya Nunoue

    IPC分类号： H01L33/40 ,  H01L33/04

    CPC分类号： H01L33/382 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42

    摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structural body, a first electrode; and a second electrode. The stacked structural body includes a first semiconductor layer of n-type, a second semiconductor layer of p-type, and a light emitting portion provided therebetween. The first electrode includes a first contact electrode portion. The second electrode includes a second contact electrode portion and a p-side pad electrode. A sheet resistance of the second contact electrode portion is lower than a sheet resistance of the first semiconductor layer. The p-side pad electrode is provided farther inward than a circumscribed rectangle of the first contact electrode portion, and the first contact electrode portion is provided farther outward than a circumscribed rectangle of the p-side pad electrode.

    摘要翻译： 根据一个实施例，半导体发光器件包括：层叠结构体，第一电极; 和第二电极。 层叠结构体包括n型的第一半导体层，p型的第二半导体层和设置在其间的发光部。 第一电极包括第一接触电极部分。 第二电极包括第二接触电极部分和p侧焊盘电极。 第二接触电极部分的薄层电阻低于第一半导体层的薄层电阻。 p侧焊盘电极比第一接触电极部分的外接矩形更靠内侧设置，并且第一接触电极部分比p侧焊盘电极的外接矩形更远地设置。

    Semiconductor light emitting device
    3.
    发明授权
    Semiconductor light emitting device 失效
    半导体发光器件

    公开(公告)号：US08436395B2

    公开(公告)日：2013-05-07

    申请号：US13405961

    申请日：2012-02-27

    申请人： Takahiro Sato ,  Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Koichi Tachibana ,  Shinya Nunoue

    发明人： Takahiro Sato ,  Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Koichi Tachibana ,  Shinya Nunoue

    IPC分类号： H01L33/36

    CPC分类号： H01L33/24 ,  H01L33/382 ,  H01L33/42

    摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure unit, a transparent, p-side and n-side electrodes. The unit includes n-type semiconductor layer, a light emitting portion provided on a part of the n-type semiconductor layer and p-type semiconductor layer provided on the light emitting portion. The transparent electrode is provided on the p-type semiconductor layer. The p-side electrode is provided on the transparent electrode. The n-side electrode is provided on the n-type semiconductor layer. The transparent electrode has a hole provided between the n-side and p-side electrodes. A width of the hole along an axis perpendicular to an axis from the p-side electrode toward the n-side electrode is longer than widths of the n-side and p-side electrodes. A distance between the hole and the n-side electrode is not longer than a distance between the hole and the p-side electrode.

    摘要翻译： 根据一个实施例，半导体发光器件包括堆叠结构单元，透明的p侧和n侧电极。 该单元包括n型半导体层，设置在n型半导体层的一部分上的发光部分和设置在发光部分上的p型半导体层。 透明电极设置在p型半导体层上。 p侧电极设置在透明电极上。 n侧电极设置在n型半导体层上。 透明电极具有设置在n侧和p侧电极之间的孔。 沿着与p侧电极朝向n侧电极的轴垂直的轴的孔的宽度比n侧电极和p侧电极的宽度长。 孔和n侧电极之间的距离不大于孔和p侧电极之间的距离。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE
    5.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光装置及制造半导体发光装置的方法

    公开(公告)号：US20110220933A1

    公开(公告)日：2011-09-15

    申请号：US12874399

    申请日：2010-09-02

    申请人： Toru GOTODA ,  Takahiro Sato ,  Toshiyuki Oka ,  Shinya Nunoue ,  Kotaro Zaima

    发明人： Toru GOTODA ,  Takahiro Sato ,  Toshiyuki Oka ,  Shinya Nunoue ,  Kotaro Zaima

    IPC分类号： H01L33/22 ,  H01L33/00

    CPC分类号： H01L33/382 ,  H01L33/0079 ,  H01L33/20 ,  H01L2933/0091

    摘要： A semiconductor light emitting device has a light emitting element, and first and second electrodes. The light emitting element has a nitride-based III-V compound semiconductor on a substrate. The first and second electrodes are disposed on both sides of the light emitting element, respectively. The light emitting element has a light emitting layer, a first conductive type semiconductor layer, and a second conductive type semiconductor layer. The first conductive type semiconductor layer is disposed between the light emitting layer and the first electrode. The second conductive type semiconductor layer is disposed between the light emitting layer and the second electrode. One surface of the first conductive type semiconductor layer contacts the first electrode and is a light extraction surface which is roughly processed so as to have two or more kinds of oblique angles.

    摘要翻译： 半导体发光器件具有发光元件，以及第一和第二电极。 发光元件在基板上具有基于氮化物的III-V族化合物半导体。 第一和第二电极分别设置在发光元件的两侧。 发光元件具有发光层，第一导电型半导体层和第二导电型半导体层。 第一导电型半导体层设置在发光层和第一电极之间。 第二导电型半导体层设置在发光层和第二电极之间。 第一导电类型半导体层的一个表面接触第一电极，并且是大致加工以具有两种或更多种倾斜角的光提取表面。

    Semiconductor light emitting device and method of fabricating semiconductor light emitting device
    6.
    发明授权
    Semiconductor light emitting device and method of fabricating semiconductor light emitting device 有权
    半导体发光器件及半导体发光器件的制造方法

    公开(公告)号：US08390007B2

    公开(公告)日：2013-03-05

    申请号：US12874399

    申请日：2010-09-02

    申请人： Toru Gotoda ,  Takahiro Sato ,  Toshiyuki Oka ,  Shinya Nunoue ,  Kotaro Zaima

    发明人： Toru Gotoda ,  Takahiro Sato ,  Toshiyuki Oka ,  Shinya Nunoue ,  Kotaro Zaima

    IPC分类号： H01L33/00

    CPC分类号： H01L33/382 ,  H01L33/0079 ,  H01L33/20 ,  H01L2933/0091

    摘要： A semiconductor light emitting device has a light emitting element, and first and second electrodes. The light emitting element has a nitride-based III-V compound semiconductor on a substrate. The first and second electrodes are disposed on both sides of the light emitting element, respectively. The light emitting element has a light emitting layer, a first conductive type semiconductor layer, and a second conductive type semiconductor layer. The first conductive type semiconductor layer is disposed between the light emitting layer and the first electrode. The second conductive type semiconductor layer is disposed between the light emitting layer and the second electrode. One surface of the first conductive type semiconductor layer contacts the first electrode and is a light extraction surface which is roughly processed so as to have two or more kinds of oblique angles.

    摘要翻译： 半导体发光器件具有发光元件，以及第一和第二电极。 发光元件在基板上具有基于氮化物的III-V族化合物半导体。 第一和第二电极分别设置在发光元件的两侧。 发光元件具有发光层，第一导电型半导体层和第二导电型半导体层。 第一导电型半导体层设置在发光层和第一电极之间。 第二导电型半导体层设置在发光层和第二电极之间。 第一导电类型半导体层的一个表面接触第一电极，并且是大致加工以具有两种或更多种倾斜角的光提取表面。

    Light emitting device
    7.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号：US08395169B2

    公开(公告)日：2013-03-12

    申请号：US12874839

    申请日：2010-09-02

    申请人： Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

    发明人： Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

    IPC分类号： H01L33/00

    CPC分类号： H01L33/504 ,  H01L24/29 ,  H01L33/507 ,  H01L33/508 ,  H01L2224/14 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/00

    摘要： According to one embodiment, a light emitting device includes a semiconductor light emitting element, a mounting member, a first wavelength conversion layer, and a first transparent layer. The semiconductor light emitting element emits a first light. The semiconductor light emitting element is placed on the mounting member. The first wavelength conversion layer is provided between the semiconductor light emitting element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The first transparent layer is provided between the semiconductor light emitting element and the first wavelength conversion layer in contact with the semiconductor light emitting element and the first wavelength conversion layer. The first transparent layer is transparent to the first light and the second light.

    摘要翻译： 根据一个实施例，发光器件包括半导体发光元件，安装构件，第一波长转换层和第一透明层。 半导体发光元件发射第一光。 半导体发光元件被放置在安装构件上。 第一波长转换层设置在与安装构件接触的半导体发光元件和安装构件之间。 第一波长转换层吸收第一光并发射波长比第一光的波长长的第二光。 第一透明层设置在与半导体发光元件和第一波长转换层接触的半导体发光元件和第一波长转换层之间。 第一透明层对于第一光和第二光是透明的。

    LIGHT EMITTING DEVICE
    8.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20130069098A1

    公开(公告)日：2013-03-21

    申请号：US13677828

    申请日：2012-11-15

    申请人： Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

    发明人： Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

    IPC分类号： H01L33/50

    CPC分类号： H01L33/50 ,  H01L24/29 ,  H01L24/32 ,  H01L33/44 ,  H01L33/504 ,  H01L33/58 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

    摘要： According to one embodiment, a light emitting device includes a semiconductor light emitting element to emit a first light, a mounting member, first and second wavelength conversion layers and a transparent layer. The first wavelength conversion layer is provided between the element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The semiconductor light emitting element is disposed between the second wavelength conversion layer and the first wavelength conversion layer. The second wavelength conversion layer absorbs the first light and emits a third light having a wavelength longer than the wavelength of the first light. The transparent layer is provided between the element and the second wavelength conversion layer. The transparent layer is transparent to the first, second, and third lights.

    摘要翻译： 根据一个实施例，发光器件包括发射第一光的半导体发光元件，安装构件，第一和第二波长转换层以及透明层。 第一波长转换层设置在与安装构件接触的元件和安装构件之间。 第一波长转换层吸收第一光并发射波长比第一光的波长长的第二光。 半导体发光元件设置在第二波长转换层和第一波长转换层之间。 第二波长转换层吸收第一光并发射波长比第一光的波长长的第三光。 透明层设置在元件和第二波长转换层之间。 透明层对于第一，第二和第三光是透明的。