公开(公告)号：US20090155844A1

公开(公告)日：2009-06-18

申请号：US12196129

申请日：2008-08-21

申请人： Shigeyuki YOKOYAMA ,  Kensaku Sakamoto ,  Nobumasa Hino ,  Takahito Mukai ,  Takatsugu Kobayashi

发明人： Shigeyuki YOKOYAMA ,  Kensaku Sakamoto ,  Nobumasa Hino ,  Takahito Mukai ,  Takatsugu Kobayashi

IPC分类号： C12P21/00 ,  C07H21/04 ,  C12N5/10

CPC分类号： C12N15/85 ,  C12N15/67 ,  C12P19/34 ,  C12P21/00 ,  C12P21/02

摘要： There are provided a DNA construct comprising non-eukaryote-derived suppressor tRNA gene containing no internal promoter functioning in a eukaryotic cell, and a eukaryote-derived or bacteriophage-derived promoter linked at the 5′ end of the tRNA gene, a method for synthesizing a suppressor tRNA by using the DNA construct, and a process for producing a non-natural amino acid-incorporated protein by using the same.

摘要翻译： 提供了包含在真核细胞中不具有内部启动子功能的非真核生物抑制基因tRNA基因的DNA构建体，以及在tRNA基因的5'末端连接的真核生物衍生或噬菌体衍生的启动子，合成方法 通过使用该DNA构建体的抑制子tRNA，以及使用该构建体的非天然氨基酸并入蛋白质的方法。

公开(公告)号：US20100155799A1

公开(公告)日：2010-06-24

申请号：US12638066

申请日：2009-12-15

申请人： Shigeyuki YOKOYAMA

发明人： Shigeyuki YOKOYAMA

IPC分类号： H01L27/108 ,  H01L27/088 ,  H01L21/8242

CPC分类号： H01L27/0207 ,  H01L21/823418 ,  H01L27/10876 ,  H01L27/10894 ,  H01L29/7834

摘要： A first MOS transistor includes, as a first impurity region, a pair of first source/drain regions including first portions formed in a semiconductor substrate and second portions formed so as to project upward from the first portions. A second MOS transistor includes a pair of second source/drain regions including second impurity regions formed in the semiconductor substrate, third impurity regions located in contact with the second impurity regions so as to project upward from the semiconductor substrate, and fourth impurity regions located on the third impurity regions. The concentration of impurities in the third impurity regions is lower than that of impurities in the fourth impurity regions. The concentration of impurities in the first impurity regions is lower than that of impurities in the second impurity regions. The first, the second, the third and the fourth impurity regions are same conductivity type.

摘要翻译： 第一MOS晶体管包括作为第一杂质区域的一对第一源极/漏极区域，包括形成在半导体衬底中的第一部分和形成为从第一部分向上突出的第二部分。 第二MOS晶体管包括一对第二源/漏区，包括形成在半导体衬底中的第二杂质区，与第二杂质区接触的第三杂质区，以便从半导体衬底向上突出，第四杂质区位于 第三杂质区。 第三杂质区域中的杂质浓度低于第四杂质区域中的杂质浓度。 第一杂质区域中的杂质浓度低于第二杂质区域中的杂质浓度。 第一，第二，第三和第四杂质区域具有相同的导电类型。

公开(公告)号：US20190194286A1

公开(公告)日：2019-06-27

申请号：US16327193

申请日：2016-07-29

申请人： Shigeyuki YOKOYAMA

发明人： Shigeyuki YOKOYAMA ,  Takehiro SHINODA ,  Kaori ITO ,  Naoko NOMURA ,  Yoshiko KATSURA ,  Tomomi SOMEYA ,  Mikako SHIROUZU ,  Tetsuya HORI ,  Yoshihiro NAKAMURA ,  Hiroaki TANABE

IPC分类号： C07K14/705 ,  C12N9/64

CPC分类号： C07K14/705 ,  C12N9/6478 ,  C12N15/09 ,  C12P21/02 ,  C12Y304/23046

摘要： In order to provide a membrane protein production method which does not require the step of solubilizing a membrane protein and which allows the membrane protein having an excellent quality to be obtained with a high yield, a method in accordance with an embodiment of the present invention includes: a step (a) of preparing a reaction solution for cell-free protein synthesis, the reaction solution containing (i) a template nucleic acid which encodes the membrane protein, (ii) a lipid, and (iii) a detergent which is contained at a concentration equal to or higher than a critical micelle concentration; and a step (b) of synthesizing the membrane protein while the concentration of the detergent in the reaction solution is maintained at a concentration equal to or higher than a critical micelle concentration.

公开(公告)号：US20130130313A1

公开(公告)日：2013-05-23

申请号：US13460773

申请日：2012-04-30

申请人： Shigeyuki YOKOYAMA ,  Kensaku Sakamoto ,  Nobumasa Hino ,  Takahito Mukai ,  Takatsugu Kobayashi

发明人： Shigeyuki YOKOYAMA ,  Kensaku Sakamoto ,  Nobumasa Hino ,  Takahito Mukai ,  Takatsugu Kobayashi

IPC分类号： C12N15/85 ,  C12P21/00

CPC分类号： C12N15/85 ,  C12N15/67 ,  C12P19/34 ,  C12P21/00 ,  C12P21/02

摘要： There are provided a DNA construct comprising a suppressor tRNA gene of a non-eukaryote containing no internal promoter functioning in a eukaryotic cell, and a eukaryotic or bacteriophage promoter linked at the 5′ end of the tRNA gene, a method for synthesizing a suppressor tRNA by using the DNA construct, and a process for producing protein incorporating a non-natural amino acid by using the same.

摘要翻译： 提供了包含在真核细胞中不具有内部启动子功能的非真核生物的抑制子tRNA基因的DNA构建体，以及在tRNA基因的5'末端连接的真核或噬菌体启动子，合成抑制子tRNA的方法 通过使用DNA构建体，以及通过使用它们生产掺入非天然氨基酸的蛋白质的方法。

公开(公告)号：US20080067343A1

公开(公告)日：2008-03-20

申请号：US11772799

申请日：2007-07-02

申请人： Hiroshi HIROTA ,  Miwako ASANUMA ,  Seketsu FUKUZAWA ,  Shigeyuki YOKOYAMA

发明人： Hiroshi HIROTA ,  Miwako ASANUMA ,  Seketsu FUKUZAWA ,  Shigeyuki YOKOYAMA

IPC分类号： B01D59/44

CPC分类号： G01N33/6851 ,  H01J49/0418

摘要： A simple and efficient method of preparing a sample in the measurement according to matrix-assisted laser desorption/ionization mass spectrometry (MALDI-MS) capable of inhibiting any ion suppression by impurities, such as inorganic salts and surfactants, contained in the sample. An analyte and matrix molecules are co-crystallized in the presence of porous microparticles. Preferably, this co-crystallization is carried out by bringing the analyte, matrix molecules and porous microparticles into contact with each other on a target plate and thereafter drying the mixture. The porous microparticles consist of an ion exchanger having an average particle diameter of not more than 50 μm, preferably a strongly basic anion exchanger.

摘要翻译： 根据能够抑制样品中所含杂质如无机盐和表面活性剂的任何离子抑制的基质辅助激光解吸/电离质谱法（MALDI-MS），在测量中制备样品的简单有效的方法。 分析物和基质分子在多孔微粒存在下共结晶。 优选地，通过使分析物，基质分子和多孔微粒在靶板上彼此接触，然后干燥混合物来进行共结晶。 多孔微粒由平均粒径不大于50μm，优选强碱性阴离子交换剂的离子交换剂组成。

公开(公告)号：US20080150030A1

公开(公告)日：2008-06-26

申请号：US11959070

申请日：2007-12-18

申请人： Shigeyuki YOKOYAMA ,  Yu Kosuge

发明人： Shigeyuki YOKOYAMA ,  Yu Kosuge

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7851 ,  H01L29/66795

摘要： A semiconductor device includes a double gate transistor which comprises an active region of a fin type and a pair of gate electrodes disposed opposite to each other through the active region. A height of the gate electrodes is higher than that of the active region and equal to or smaller than a calculated gate electrode height calculated using the following formula: ( ( Gate   Electrode   Height  [ nm ] ) - ( Active   Region   Height  [ nm ] ) ) / ( Active   Region   Height  [ nm ] ) = 3.5    - 5 × ( Gate   Length  [ nm ] ) 2 - 0.002 × ( Gate   Length  [ nm ] ) + 0.16 .