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    Production of carboxylic acids from carbonylation of alcohol
    6.
    发明授权
    Production of carboxylic acids from carbonylation of alcohol 失效
    从醇的羰基化生产羧酸

    公开(公告)号：US5227519A

    公开(公告)日：1993-07-13

    申请号：US840175

    申请日：1992-02-24

    申请人： Ying-Chih Lin ,  Yeong-Cheong Lee

    发明人： Ying-Chih Lin ,  Yeong-Cheong Lee

    IPC分类号： C07C51/12

    CPC分类号： C07C51/12

    摘要： This invention relates to an improved process for synthesizing carboxylic acids by the carbonylation of alcohol. An alcohol such as methanol is reacted with carbon monoxide in a liquid reaction medium containing a rhodium (Rh) catalyst stabilized with an haloacetic acid, especially trifluoroacetic acid (TFAA), along with alkyl iodide such as methyl iodide (MeI) in specified proportions. The present reaction system is not only characterized by unexpectedly high catalyst stability, but also characterized by the high reaction rate for the formation of acetic acid. The improvement resides in the employment of trifluoroacetic acid as the catalyst promoter at a temperature from 180.degree. C. to 200.degree. C. The primary advantage of the catalyst system of this invention is the enhancement of the rate of carbonylation. The other advantage of the catalyst system is that they are readily soluble and thermally stable, making them resistant to deposition.

    摘要翻译： 本发明涉及通过醇的羰基化合成羧酸的改进方法。 醇等甲醇与含有用卤代乙酸特别是三氟乙酸（TFAA）稳定的铑（Rh）催化剂的液体反应介质一起与一氧化碳一起与特定比例的碘代甲烷（MeI）等烷基碘反应。 本反应体系不仅具有意想不到的高催化剂稳定性，而且其特征还在于形成乙酸的反应速度高。 改进在于在180℃至200℃的温度下使用三氟乙酸作为催化剂促进剂。本发明的催化剂体系的主要优点是提高了羰基化速率。 催化剂体系的另一个优点是它们易于溶解和热稳定，使其具有耐沉积性。

    Method of fabricating openings
    7.
    发明授权
    Method of fabricating openings 有权
    开口方法

    公开(公告)号：US08592322B2

    公开(公告)日：2013-11-26

    申请号：US13535370

    申请日：2012-06-28

    申请人： Feng-Yi Chang ,  Pei-Yu Chou ,  Jiunn-Hsiung Liao ,  Chih-Wen Feng ,  Ying-Chih Lin ,  Po-Chao Tsao

    发明人： Feng-Yi Chang ,  Pei-Yu Chou ,  Jiunn-Hsiung Liao ,  Chih-Wen Feng ,  Ying-Chih Lin ,  Po-Chao Tsao

    IPC分类号： H01L21/302

    CPC分类号： H01L21/76802 ,  H01L21/76831 ,  H01L21/76897

    摘要： A method of fabricating openings is disclosed. First, a semiconductor substrate having a salicide region thereon is provided. An etch stop layer and at least a dielectric layer are disposed on the semiconductor substrate from bottom to top. Second, the dielectric layer and the etching stop layer are patterned to form a plurality of openings in the dielectric layer and in the etching stop layer so that the openings expose the salicide region. Then, a dielectric thin film covering the dielectric layer, sidewalls of the openings and the salicide region is formed. Later, the dielectric thin film disposed on the dielectric layer and on the salicide region is removed.

    摘要翻译： 公开了一种制造开口的方法。 首先，提供其上具有自对准硅化物区域的半导体衬底。 蚀刻停止层和至少介电层从底部到顶部设置在半导体衬底上。 其次，对电介质层和蚀刻停止层进行图案化以在电介质层和蚀刻停止层中形成多个开口，使得开口露出自对准区域。 然后，形成覆盖电介质层的电介质薄膜，开口侧壁和自对准硅化物区域。 然后，去除设置在电介质层和自对准硅化物区域上的电介质薄膜。

    Opening structure for semiconductor device
    8.
    发明授权
    Opening structure for semiconductor device 有权
    半导体器件的开口结构

    公开(公告)号：US08461649B2

    公开(公告)日：2013-06-11

    申请号：US13234159

    申请日：2011-09-16

    申请人： Po-Chao Tsao ,  Chang-Chi Huang ,  Ming-Tsung Chen ,  Feng-Yi Chang ,  Pei-Yu Chou ,  Jiunn-Hsiung Liao ,  Chih-Wen Feng ,  Ying-Chih Lin

    发明人： Po-Chao Tsao ,  Chang-Chi Huang ,  Ming-Tsung Chen ,  Feng-Yi Chang ,  Pei-Yu Chou ,  Jiunn-Hsiung Liao ,  Chih-Wen Feng ,  Ying-Chih Lin

    IPC分类号： H01L29/78

    CPC分类号： H01L21/31144 ,  H01L21/76802 ,  H01L21/76831 ,  H01L23/485

    摘要： An opening structure is disclosed. The opening structure includes: a semiconductor substrate; at least one dielectric layer disposed on the semiconductor substrate, wherein the dielectric layer has a plurality of openings exposing the semiconductor substrate, and each of the openings has a sidewall; a dielectric thin film covering at least a portion of the sidewall of each of the openings; an etch stop layer disposed between the semiconductor substrate and the dielectric layer and extending partially into the openings to isolate the dielectric thin film from the semiconductor substrate; and a metal layer filled in the openings.

    摘要翻译： 公开了一种开口结构。 开口结构包括：半导体衬底; 设置在所述半导体衬底上的至少一个电介质层，其中所述电介质层具有暴露所述半导体衬底的多个开口，并且每个所述开口具有侧壁; 覆盖每个开口的侧壁的至少一部分的电介质薄膜; 蚀刻停止层，设置在所述半导体衬底和所述电介质层之间并且部分地延伸到所述开口中以将所述电介质薄膜与所述半导体衬底隔离; 以及填充在开口中的金属层。

    METHOD OF FABRICATING OPENINGS
    9.
    发明申请
    METHOD OF FABRICATING OPENINGS 有权
    制作开口的方法

    公开(公告)号：US20120270403A1

    公开(公告)日：2012-10-25

    申请号：US13535370

    申请日：2012-06-28

    申请人： Feng-Yi Chang ,  Pei-Yu Chou ,  Jiunn-Hsiung Liao ,  Chih-Wen Feng ,  Ying-Chih Lin ,  Po-Chao Tsao

    发明人： Feng-Yi Chang ,  Pei-Yu Chou ,  Jiunn-Hsiung Liao ,  Chih-Wen Feng ,  Ying-Chih Lin ,  Po-Chao Tsao

    IPC分类号： H01L21/306

    CPC分类号： H01L21/76802 ,  H01L21/76831 ,  H01L21/76897

    摘要： A method of fabricating openings is disclosed. First, a semiconductor substrate having a salicide region thereon is provided. An etch stop layer and at least a dielectric layer are disposed on the semiconductor substrate from bottom to top. Second, the dielectric layer and the etching stop layer are patterned to form a plurality of openings in the dielectric layer and in the etching stop layer so that the openings expose the salicide region. Then, a dielectric thin film covering the dielectric layer, sidewalls of the openings and the salicide region is formed. Later, the dielectric thin film disposed on the dielectric layer and on the salicide region is removed.

    摘要翻译： 公开了一种制造开口的方法。 首先，提供其上具有自对准硅化物区域的半导体衬底。 蚀刻停止层和至少介电层从底部到顶部设置在半导体衬底上。 其次，对电介质层和蚀刻停止层进行图案化以在电介质层和蚀刻停止层中形成多个开口，使得开口露出自对准区域。 然后，形成覆盖电介质层的电介质薄膜，开口侧壁和自对准硅化物区域。 然后，去除设置在电介质层和自对准硅化物区域上的电介质薄膜。

    Method for controlling ADI-AEI CD difference ratio of openings having different sizes
    10.
    发明授权
    Method for controlling ADI-AEI CD difference ratio of openings having different sizes 有权
    用于控制具有不同尺寸的开口的ADI-AEI CD差异比率的方法

    公开(公告)号：US08293639B2

    公开(公告)日：2012-10-23

    申请号：US12371809

    申请日：2009-02-16

    申请人： Feng-Yih Chang ,  Pei-Yu Chou ,  Jiunn-Hsiung Liao ,  Chih-Wen Feng ,  Ying-Chih Lin

    发明人： Feng-Yih Chang ,  Pei-Yu Chou ,  Jiunn-Hsiung Liao ,  Chih-Wen Feng ,  Ying-Chih Lin

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76804 ,  H01L21/31144 ,  H01L21/76895

    摘要： A method for controlling an ADI-AEI CD difference ratio of openings having different sizes is described. The openings are formed through a silicon-containing material layer, an etching resistive layer and a target material layer in turn. Before the opening etching steps, at least one of the opening patterns in the photoresist mask is altered in size through photoresist trimming or deposition of a substantially conformal polymer layer. A first etching step forming thicker polymer on the sidewall of the wider opening pattern is performed to form a patterned Si-containing material layer. A second etching step is performed to remove exposed portions of the etching resistive layer and the target material layer. At least one parameter among the parameters of the photoresist trimming or polymer layer deposition step and the etching parameters of the first etching step is controlled to obtain a predetermined ADI-AEI CD difference ratio.

    摘要翻译： 描述了用于控制具有不同尺寸的开口的ADI-AEI CD差异比率的方法。 开口依次形成为含硅材料层，蚀刻电阻层和靶材料层。 在开口蚀刻步骤之前，光致抗蚀剂掩模中的至少一个开口图案的尺寸通过基本上保形的聚合物层的光致抗蚀剂修饰或沉积而改变。 执行在更宽的开口图案的侧壁上形成较厚聚合物的第一蚀刻步骤以形成图案化的含Si材料层。 执行第二蚀刻步骤以去除蚀刻电阻层和目标材料层的暴露部分。 控制光致抗蚀剂修整或聚合物层沉积步骤的参数中的至少一个参数和第一蚀刻步骤的蚀刻参数以获得预定的ADI-AEI CD差异比。