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    RESIST COMPOSITION AND PATTERNING PROCESS
    2.
    发明申请
    RESIST COMPOSITION AND PATTERNING PROCESS 有权

    公开(公告)号：US20220236643A1

    公开(公告)日：2022-07-28

    申请号：US17082233

    申请日：2021-01-21

    申请人： SHIN-ETSU CHEMICAL CO., LTD.

    发明人： Teppei Adachi ,  Tomohiro Kobayashi ,  Kenichi Oikawa ,  Masaki Ohashi ,  Takayuki Fujiwara

    IPC分类号： G03F7/004 ,  G03F7/20

    摘要： A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group and further containing at least one repeating unit having an aromatic substituent; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms with a heteroatom; W2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms without a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M+ represents an onium cation. This provides a resist composition and a patterning process of using it that show a particularly favorable mask dimension dependency and CDU in photolithography where a light source is a high-energy beam such as a KrF excimer laser beam, an electron beam, or an extreme ultraviolet ray.

    Polymer, making method, resist composition, and patterning process
    6.
    发明授权
    Polymer, making method, resist composition, and patterning process 有权

    公开(公告)号：US10234757B2

    公开(公告)日：2019-03-19

    申请号：US13768545

    申请日：2013-02-15

    申请人： SHIN-ETSU CHEMICAL CO., LTD.

    发明人： Masaki Ohashi ,  Tomohiro Kobayashi

    IPC分类号： G03F7/004 ,  C08F220/18 ,  C08F220/38 ,  C08F220/24 ,  C08F220/28

    摘要： A sulfonic acid anion-containing polymer having an alkylsulfonium cation not in covalent bond thereto can be readily prepared by reacting a sulfonic acid anion-containing polymer having an ammonium or metal cation with an alkylsulfonium salt under mild conditions. A resist composition comprising the inventive polymer is effective for suppressing acid diffusion since the sulfonium salt is bound to the polymer backbone. When processed by the ArF lithography, the polymer exhibits a lower absorption at the exposure wavelength than the triarylsulfonium salt form PAGs, resulting in improved resolution, mask fidelity, and LWR.

    RESIST COMPOSITION AND PATTERNING PROCESS
    7.
    发明申请
    RESIST COMPOSITION AND PATTERNING PROCESS 审中-公开
    耐腐蚀组合物和方法

    公开(公告)号：US20150346600A1

    公开(公告)日：2015-12-03

    申请号：US14720173

    申请日：2015-05-22

    申请人： Shin-Etsu Chemical Co., Ltd.

    发明人： Teppei Adachi ,  Masayoshi Sagehashi ,  Masaki Ohashi ,  Koji Hasegawa ,  Tomohiro Kobayashi ,  Kenichi Oikawa

    IPC分类号： G03F7/038

    CPC分类号： G03F7/038 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/325

    摘要： A pattern is formed by coating a resist composition comprising a resin component comprising recurring units of formula (1) and a photoacid generator of formula (2) onto a substrate, baking, exposure, PEB and developing in an organic solvent. In formulae (1) and (2), R1 and R2 are C1-C3 alkyl, R4 is hydrogen or methyl, A is hydrogen or trifluoromethyl, R101, R102 and R103 are hydrogen or a monovalent hydrocarbon group, m and n are 0-5, p is 0-4, and L is a single bond or a divalent hydrocarbon group.

    摘要翻译： 通过将包含式（1）的重复单元的树脂组分和式（2）的光致酸产生剂的树脂组分的抗蚀剂组合物涂布在基材上，烘烤，曝光，PEB和在有机溶剂中显影而形成图案。 在式（1）和（2）中，R 1和R 2是C 1 -C 3烷基，R 4是氢或甲基，A是氢或三氟甲基，R 101，R 102和R 103是氢或一价烃基，m和n是0- 5，p为0-4，L为单键或二价烃基。

    NEGATIVE PATTERN FORMING PROCESS AND NEGATIVE RESIST COMPOSITION
    8.
    发明申请
    NEGATIVE PATTERN FORMING PROCESS AND NEGATIVE RESIST COMPOSITION 审中-公开
    负面图案形成过程和负面反应组成

    公开(公告)号：US20130130177A1

    公开(公告)日：2013-05-23

    申请号：US13679243

    申请日：2012-11-16

    申请人： SHIN-ETSU CHEMICAL CO., LTD.

    发明人： Tomohiro Kobayashi ,  Kazuhiro Katayama ,  Jun Hatakeyama ,  Yuuki Suka ,  Koji Hasegawa

    IPC分类号： G03F7/004

    CPC分类号： G03F7/004 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/325

    摘要： A negative pattern is formed by applying a resist composition comprising (A) a polymer comprising recurring units (a1) having a hydroxyl group protected with an acid labile group and recurring units (a2) having an amino group, amide bond, carbamate bond or nitrogen-containing heterocycle, (B) a photoacid generator, and (C) an organic solvent onto a substrate, prebaking, exposing, baking, and selectively dissolving an unexposed region of the resist film in an organic solvent-based developer.

    摘要翻译： 通过应用抗蚀剂组合物形成负型图案，所述抗蚀剂组合物包含（A）包含具有被酸不稳定基保护的羟基的重复单元（a1）的聚合物和具有氨基，酰胺键，氨基甲酸酯键或氮原子的重复单元（a2） （B）光致酸产生剂，和（C）有机溶剂在基材上，预先烘烤，曝光，烘烤和选择性地将抗蚀剂膜的未曝光区域溶解在有机溶剂型显影剂中。